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1. 发明申请

US20120074511A1 MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20120074511A1
公开(公告)日：2012-03-29
申请号：US13231894
申请日：2011-09-13
申请人： Shigeki TAKAHASHI , Yuichi OHSAWA , Junichi ITO , Chikayoshi KAMATA , Saori KASHIWADA , Minoru AMANO , Hiroaki YODA
发明人： Shigeki TAKAHASHI , Yuichi OHSAWA , Junichi ITO , Chikayoshi KAMATA , Saori KASHIWADA , Minoru AMANO , Hiroaki YODA
IPC分类号： H01L27/22 , H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.
摘要翻译：根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

2. 发明申请

US20120243308A1 MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁性元件和非易失性存储器件
公开(公告)号：US20120243308A1
公开(公告)日：2012-09-27
申请号：US13227959
申请日：2011-09-08
申请人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
发明人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。中间互连设置在导电层之间。第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

3. 发明申请

US20120236633A1 MAGNETIC RECORDING ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁记录元件和非易失性存储器件
公开(公告)号：US20120236633A1
公开(公告)日：2012-09-20
申请号：US13228040
申请日：2011-09-08
申请人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
发明人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
IPC分类号： G11C11/15 , G11B5/66
CPC分类号： G11B5/66 , G11C11/161 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁记录元件包括堆叠体。堆叠体包括第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一非磁性层设置在第一和第二铁磁层之间。第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。第四铁磁层与第三铁磁层层叠。第二非磁性层设置在第三和第四铁磁层之间。第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

4. 发明申请

US20130028011A1 MAGNETORESISTIVE DEVICE AND MAGNETIC MEMORY 有权
标题翻译：磁性器件和磁性存储器
公开(公告)号：US20130028011A1
公开(公告)日：2013-01-31
申请号：US13424769
申请日：2012-03-20
申请人： Eiji KITAGAWA , Naoharu SHIMOMURA , Hiroaki Yoda , Junichi ITO , Minoru AMANO , Chikayoshi KAMATA , Keiko ABE
发明人： Eiji KITAGAWA , Naoharu SHIMOMURA , Hiroaki Yoda , Junichi ITO , Minoru AMANO , Chikayoshi KAMATA , Keiko ABE
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
摘要翻译：实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

5. 发明申请

US20120230091A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20120230091A1
公开(公告)日：2012-09-13
申请号：US13426139
申请日：2012-03-21
申请人： Satoshi YANAGI , Eiji KITAGAWA , Masahiko NAKAYAMA , Jyunichi OZEKI , Hisanori AIKAWA , Naoharu SHIMOMURA , Masatoshi YOSHIKAWA , Minoru AMANO , Shigeki TAKAHASHI , Hiroaki YODA
发明人： Satoshi YANAGI , Eiji KITAGAWA , Masahiko NAKAYAMA , Jyunichi OZEKI , Hisanori AIKAWA , Naoharu SHIMOMURA , Masatoshi YOSHIKAWA , Minoru AMANO , Shigeki TAKAHASHI , Hiroaki YODA
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.
摘要翻译：根据一个实施例，磁存储器包括至少一个包括磁阻元件的存储单元以及第一和第二电极。元件包括第一磁性层，隧道势垒层，第二磁性层和设置在第二磁性层上并且具有与第二磁性层的磁化方向反平行的磁化的第三磁性层。第一磁性层的上表面的直径小于隧道势垒层的下表面的直径。第二磁性层的下表面的直径不大于隧道势垒层的上表面的直径。

6. 发明申请

US20100197044A1 METHOD OF MANUFACTURING A MAGNETIC RANDOM ACCESS MEMORY, METHOD OF MANUFACTURING AN EMBEDDED MEMORY, AND TEMPLATE 有权
标题翻译：制造磁性随机存取存储器的方法，制造嵌入式存储器的方法和模板
公开(公告)号：US20100197044A1
公开(公告)日：2010-08-05
申请号：US12699721
申请日：2010-02-03
申请人： Takeshi KAJIYAMA , Yoshiaki ASAO , Minoru AMANO , Shigeki TAKAHASHI , Masayoshi IWAYAMA , Kuniaki SUGIURA
发明人： Takeshi KAJIYAMA , Yoshiaki ASAO , Minoru AMANO , Shigeki TAKAHASHI , Masayoshi IWAYAMA , Kuniaki SUGIURA
IPC分类号： H01L21/28 , B28B17/00
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228
摘要： A magnetic material of a magnetoresistive element is formed on a lower electrode. An upper electrode is formed on the magnetic material. A resist for nano-imprint lithography is formed on the upper electrode. A first pattern or a second pattern is formed in the resist by setting a first template or a second template into contact with the resist and curing the resist. The first template has the first pattern that corresponds to the magnetoresistive element and the lower electrode. The second template has the second pattern that corresponds to the magnetoresistive element and the upper electrode. The magnetic material and the lower electrode are patterned at the same time by using the resist having the first pattern, or the magnetic material and the upper electrode are patterned at the same time by using the resist having the second pattern.
摘要翻译：磁阻元件的磁性材料形成在下电极上。在磁性材料上形成上部电极。在上电极上形成用于纳米压印光刻的抗蚀剂。通过将第一模板或第二模板与抗蚀剂接触并固化抗蚀剂，在抗蚀剂中形成第一图案或第二图案。第一模板具有对应于磁阻元件和下电极的第一图案。第二模板具有对应于磁阻元件和上电极的第二图案。通过使用具有第一图案的抗蚀剂，同时对磁性材料和下电极进行图案化，或者通过使用具有第二图案的抗蚀剂同时对磁性材料和上部电极进行图案化。

7. 发明申请

US20100078763A1 RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有电阻变化元件的电阻变化记忆及其制造方法
公开(公告)号：US20100078763A1
公开(公告)日：2010-04-01
申请号：US12559446
申请日：2009-09-14
申请人： Keiji HOSOTANI , Yoshiaki ASAO , Kuniaki SUGIURA , Masatoshi YOSHIKAWA , Sumio IKEGAWA , Shigeki TAKAHASHI , Minoru AMANO
发明人： Keiji HOSOTANI , Yoshiaki ASAO , Kuniaki SUGIURA , Masatoshi YOSHIKAWA , Sumio IKEGAWA , Shigeki TAKAHASHI , Minoru AMANO
IPC分类号： H01L29/86 , H01L21/8239
CPC分类号： H01L43/08 , G11C11/161
摘要： A resistance-change memory includes an interlayer insulating film, a lower electrode layer, a fixed layer, a first insulating film, a recording layer, a second insulating film, a conducting layer and an interconnect. The interlayer insulating film is formed on a semiconductor substrate and has a step. The lower electrode layer is formed on the interlayer insulating film including the step. The fixed layer is formed on the lower electrode layer and has invariable magnetization. The first insulating film is formed on the fixed layer. The recording layer is formed on part of the first insulating film and has variable magnetization. The second insulating film is over the recording layer and in contact with the first insulating film. The conducting layer is formed on the second insulating film. The interconnect is connected to the conducting layer.
摘要翻译：电阻变化存储器包括层间绝缘膜，下电极层，固定层，第一绝缘膜，记录层，第二绝缘膜，导电层和互连。层间绝缘膜形成在半导体基板上并具有台阶。包括该步骤的层间绝缘膜上形成下电极层。固定层形成在下电极层上，具有不变的磁化。第一绝缘膜形成在固定层上。记录层形成在第一绝缘膜的一部分上并且具有可变的磁化强度。第二绝缘膜在记录层上方并与第一绝缘膜接触。导电层形成在第二绝缘膜上。互连连接到导电层。

8. 发明申请

US20110254112A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110254112A1
公开(公告)日：2011-10-20
申请号：US13015410
申请日：2011-01-27
申请人： Takaya YAMANAKA , Yoshiaki ASAO , Takeshi KAJIYAMA , Minoru AMANO , Masayoshi IWAYAMA , Kuniaki SUGIURA , Yukinori KOYAMA
发明人： Takaya YAMANAKA , Yoshiaki ASAO , Takeshi KAJIYAMA , Minoru AMANO , Masayoshi IWAYAMA , Kuniaki SUGIURA , Yukinori KOYAMA
IPC分类号： H01L29/82 , H01L21/4763
CPC分类号： H01L27/228 , H01L21/7684 , H01L43/12
摘要： A semiconductor memory device includes a semiconductor substrate, and plural switching transistors provided on the semiconductor substrate. A contact plug is embedded between the adjacent two switching transistors described above, is insulated from gates of the adjacent two switching transistors, and is electrically connected to diffusion layers of the adjacent two switching transistors. An upper connector is formed on the contact plug, and an upper surface is at a position higher than upper surfaces of the switching transistors. A memory element is provided on the upper surface of the upper connector, and stores data. A wiring is provided on the memory element.
摘要翻译：半导体存储器件包括半导体衬底和设置在半导体衬底上的多个开关晶体管。接触插头嵌入在上述相邻的两个开关晶体管之间，与相邻的两个开关晶体管的栅极绝缘，并且电连接到相邻的两个开关晶体管的扩散层。在接触插塞上形成上连接器，上表面位于高于开关晶体管的上表面的位置。存储元件设置在上连接器的上表面上并存储数据。在存储元件上提供布线。

9. 发明申请

US20100193850A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20100193850A1
公开(公告)日：2010-08-05
申请号：US12697912
申请日：2010-02-01
申请人： Yoshiaki ASAO , Takeshi KAJIYAMA , Minoru AMANO , Yoshikuni TATEYAMA , Atsushi SHIGETA
发明人： Yoshiaki ASAO , Takeshi KAJIYAMA , Minoru AMANO , Yoshikuni TATEYAMA , Atsushi SHIGETA
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L27/105
摘要： First and second transistors are formed on a substrate. An interlayer insulating film is formed on the first transistor. A first contact is formed in the interlayer film on a source or a drain of the first transistor. A second contact is formed in the interlayer film on the other of the source or the drain. A first interconnect is formed on the first contact. A magnetoresistive element is formed on the second contact. The magnetoresistive element is arranged in a layer having a height equal to that of the first interconnect from a substrate surface. A third contact is formed in the interlayer film on a source or a drain of the second transistor. A second interconnect is formed on the third contact. The second interconnect is arranged in a layer having a height equal to those of the first interconnect and the magnetoresistive element from the substrate surface.
摘要翻译：第一和第二晶体管形成在衬底上。在第一晶体管上形成层间绝缘膜。在第一晶体管的源极或漏极上的层间膜中形成第一接触。在源极或漏极中的另一个的层间膜中形成第二接触。在第一接触件上形成第一互连。在第二触点上形成磁阻元件。磁阻元件从衬底表面布置成具有与第一互连的高度相同的高度的层。在第二晶体管的源极或漏极上的层间膜中形成第三接触。在第三触点上形成第二互连。第二互连布置在具有与来自衬底表面的第一互连和磁阻元件的高度相同的高度的层中。

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