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1. 发明申请

US20120196434A1 E-fuse Structure Design in Electrical Programmable Redundancy for Embedded Memory Circuit 有权
标题翻译：嵌入式存储器电路的电可编程冗余中的电熔丝结构设计
公开(公告)号：US20120196434A1
公开(公告)日：2012-08-02
申请号：US13443550
申请日：2012-04-10
申请人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
发明人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L21/02
CPC分类号： H01L23/5256 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.
摘要翻译：提出了电熔丝及其形成方法。在基材上形成第一层导电线。在第一层导电线上形成通孔。通孔优选包括阻挡层和导电材料。在通孔上形成第二层导电线。第一外部焊盘形成为耦合到第一层导电线。第二外部焊盘形成为耦合到第二层导电线。通孔，第一导线和第二导线适于作为电熔丝。电熔丝可以通过施加电流而烧坏。优选实施例的垂直结构适合于形成任何层。

2. 发明授权

US07892895B2 Diode junction poly fuse 有权
标题翻译：二极管结聚熔丝
公开(公告)号：US07892895B2
公开(公告)日：2011-02-22
申请号：US11207634
申请日：2005-08-19
申请人： Shien-Yang Wu , Shi-Bai Chen
发明人： Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L21/82
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.
摘要翻译：用于提供具有p-n结二极管的电熔丝的系统和方法。优选实施例包括阴极，阳极和形成在阴极和阳极之间的一个或多个连接。邻接连接的阴极和阴极部分掺杂有第一杂质，优选p型杂质。阳极和邻接阳极的连接部分掺杂有第二杂质，优选为n型杂质。连接中的第一杂质和第二杂质的结形成p-n结二极管。在p-n结二极管上形成诸如硅化物层的导电层。在替代实施例中，可以在每个链路中形成多个p-n结二极管。可以形成一个或多个触点以提供与阴极和阳极的电接触。

3. 发明申请

US20050218475A1 Low power fuse structure and method for making the same 有权
标题翻译：低功率熔断器结构及制作方法
公开(公告)号：US20050218475A1
公开(公告)日：2005-10-06
申请号：US10805747
申请日：2004-03-22
申请人： Shien-Yang Wu , Shi-Bai Chen
发明人： Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L21/02 , H01L21/768 , H01L23/525 , H01L23/62 , H01L27/10
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A fuse comprises a silicide element disposed above a substrate, a first terminal contact coupled to a first end of the silicide element, and a first metal line disposed above the silicide element and coupled to the first terminal contact. The fuse further comprises a plurality of second terminal contacts coupled to a second end of the silicide element, and a second metal line disposed above the silicide element and coupled to the plurality of second terminal contacts. The silicide element has a sufficient width that a programming potential applied across the first and second metal lines causes a discontinuity in the first terminal contact.
摘要翻译：熔丝包括设置在衬底上的硅化物元件，耦合到硅化物元件的第一端的第一端子触点和设置在硅化物元件上方并耦合到第一端子触点的第一金属线。熔丝还包括耦合到硅化物元件的第二端的多个第二端子触点，以及设置在硅化物元件上方并耦合到多个第二端子触点的第二金属线。硅化物元件具有足够的宽度，使得施加在第一和第二金属线上的编程电位导致第一端子触点中的不连续性。

4. 发明授权

US08174091B2 Fuse structure 有权
标题翻译：保险丝结构
公开(公告)号：US08174091B2
公开(公告)日：2012-05-08
申请号：US12503641
申请日：2009-07-15
申请人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
发明人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.
摘要翻译：提出了电熔丝及其形成方法。在基材上形成第一层导电线。在第一层导电线上形成通孔。通孔优选包括阻挡层和导电材料。在通孔上形成第二层导电线。第一外部焊盘形成为耦合到第一层导电线。第二外部焊盘形成为耦合到第二层导电线。通孔，第一导线和第二导线适于作为电熔丝。电熔丝可以通过施加电流而烧坏。优选实施例的垂直结构适合于形成任何层。

5. 发明授权

US07109564B2 Low power fuse structure and method of making the same 有权
标题翻译：低功率熔断器结构及制作方法
公开(公告)号：US07109564B2
公开(公告)日：2006-09-19
申请号：US10805747
申请日：2004-03-22
申请人： Shien-Yang Wu , Shi-Bai Chen
发明人： Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A fuse comprises a silicide element disposed above a substrate, a first terminal contact coupled to a first end of the silicide element, and a first metal line disposed above the silicide element and coupled to the first terminal contact. The fuse further comprises a plurality of second terminal contacts coupled to a second end of the silicide element, and a second metal line disposed above the silicide element and coupled to the plurality of second terminal contacts. The silicide element has a sufficient width that a programming potential applied across the first and second metal lines causes a discontinuity in the first terminal contact.
摘要翻译：熔丝包括设置在衬底上的硅化物元件，耦合到硅化物元件的第一端的第一端子触点和设置在硅化物元件上方并耦合到第一端子触点的第一金属线。熔丝还包括耦合到硅化物元件的第二端的多个第二端子触点，以及设置在硅化物元件上方并耦合到多个第二端子触点的第二金属线。硅化物元件具有足够的宽度，使得施加在第一和第二金属线上的编程电位导致第一端子触点中的不连续性。

6. 发明授权

US08629050B2 E-fuse structure design in electrical programmable redundancy for embedded memory circuit 有权
标题翻译：用于嵌入式存储器电路的电可编程冗余中的电熔丝结构设计
公开(公告)号：US08629050B2
公开(公告)日：2014-01-14
申请号：US13443550
申请日：2012-04-10
申请人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry-Hak-Lay Chuang , Shien-Yang Wu , Shi-Bai Chen
发明人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry-Hak-Lay Chuang , Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L21/02
CPC分类号： H01L23/5256 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.
摘要翻译：提出了电熔丝及其形成方法。在基材上形成第一层导电线。在第一层导电线上形成通孔。通孔优选包括阻挡层和导电材料。在通孔上形成第二层导电线。第一外部焊盘形成为耦合到第一层导电线。第二外部焊盘形成为耦合到第二层导电线。通孔，第一导线和第二导线适于作为电熔丝。电熔丝可以通过施加电流而烧坏。优选实施例的垂直结构适合于形成任何层。

7. 发明申请

US20050277232A1 Diode junction poly fuse 有权
公开(公告)号：US20050277232A1
公开(公告)日：2005-12-15
申请号：US11207634
申请日：2005-08-19
申请人： Shien-Yang Wu , Shi-Bai Chen
发明人： Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L21/768 , H01L21/82 , H01L23/525 , H01L29/00 , H01L29/36 , H01L29/74 , H01L29/861
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.

8. 发明授权

US06956277B1 Diode junction poly fuse 失效
标题翻译：二极管结聚熔丝
公开(公告)号：US06956277B1
公开(公告)日：2005-10-18
申请号：US10806955
申请日：2004-03-23
申请人： Shien-Yang Wu , Shi-Bai Chen
发明人： Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L21/768 , H01L21/82 , H01L23/525 , H01L29/00 , H01L29/36 , H01L29/74 , H01L29/861
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.
摘要翻译：用于提供具有p-n结二极管的电熔丝的系统和方法。优选实施例包括阴极，阳极和形成在阴极和阳极之间的一个或多个连接。邻接连接的阴极和阴极部分掺杂有第一杂质，优选p型杂质。阳极和邻接阳极的连接部分掺杂有第二杂质，优选为n型杂质。连接中的第一杂质和第二杂质的结形成p-n结二极管。在p-n结二极管上形成诸如硅化物层的导电层。在替代实施例中，可以在每个链路中形成多个p-n结二极管。可以形成一个或多个触点以提供与阴极和阳极的电接触。

9. 发明申请

US20090273055A1 Fuse Structure 有权
标题翻译：保险丝结构
公开(公告)号：US20090273055A1
公开(公告)日：2009-11-05
申请号：US12503641
申请日：2009-07-15
申请人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
发明人： Kong-Beng Thei , Chung Long Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.
摘要翻译：提出了电熔丝及其形成方法。在基材上形成第一层导电线。在第一层导电线上形成通孔。通孔优选包括阻挡层和导电材料。在通孔上形成第二层导电线。第一外部焊盘形成为耦合到第一层导电线。第二外部焊盘形成为耦合到第二层导电线。通孔，第一导线和第二导线适于作为电熔丝。电熔丝可以通过施加电流而烧坏。优选实施例的垂直结构适合于形成任何层。

10. 发明申请

US20050285222A1 New fuse structure 审中-公开
标题翻译：新的保险丝结构
公开(公告)号：US20050285222A1
公开(公告)日：2005-12-29
申请号：US11137075
申请日：2005-05-25
申请人： Kong-Beng Thei , Chung Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
发明人： Kong-Beng Thei , Chung Cheng , Chung-Shi Liu , Harry Chuang , Shien-Yang Wu , Shi-Bai Chen
IPC分类号： H01L23/525 , H01L23/532 , H01L29/00
CPC分类号： H01L23/5256 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.
摘要翻译：提出了电熔丝及其形成方法。在基材上形成第一层导电线。在第一层导电线上形成通孔。通孔优选包括阻挡层和导电材料。在通孔上形成第二层导电线。第一外部焊盘形成为耦合到第一层导电线。第二外部焊盘形成为耦合到第二层导电线。通孔，第一导线和第二导线适于作为电熔丝。电熔丝可以通过施加电流而烧坏。优选实施例的垂直结构适合于形成任何层。

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