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    • 8. 发明申请
    • PROCESS FOR DEPOSITING ORGANIC MATERIALS
    • 沉积有机材料的工艺
    • US20090081883A1
    • 2009-03-26
    • US11861618
    • 2007-09-26
    • Diane C. FreemanDavid H. LevyPeter J. Cowdery-Corvan
    • Diane C. FreemanDavid H. LevyPeter J. Cowdery-Corvan
    • H01L21/469
    • C23C16/30B05D1/60B05D2252/02C23C16/45551C23C16/45553C23C16/545
    • A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.
    • 公开了通过原子层沉积在衬底上制造有机薄膜的方法,该方法包括同时引导一系列沿着大致平行的细长通道的气流,并且其中一系列气流依次包括至少第一 反应性气态材料,惰性吹扫气体和第二反应性气体材料,任选地重复多次,其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应,其中第一反应性气态材料 ,第二反应性气体物质或两者都是挥发性有机化合物。 在有机薄膜的沉积期间,该过程基本上在大气压以上且在250℃以下的温度下进行。