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1. 发明授权

US06777329B2 Method to form C54 TiSi2 for IC device fabrication 失效
标题翻译：用于IC器件制造的形成C54 TiSi2的方法
公开(公告)号：US06777329B2
公开(公告)日：2004-08-17
申请号：US09838513
申请日：2001-04-20
申请人： Shaoyin Chen , Ze Xiang Shen , Alex See , Lap Chan
发明人： Shaoyin Chen , Ze Xiang Shen , Alex See , Lap Chan
IPC分类号： H01L2144
CPC分类号： H01L21/28518 , H01L21/268 , H01L21/28052 , H01L29/665
摘要： A novel method for forming a C54 phase titanium disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A titanium layer is deposited overlying the silicon regions to be silicided. The substrate is subjected to a first annealing whereby the titanium is transformed to phase C40 titanium disilicide where it overlies the silicon regions and wherein the titanium not overlying the silicon regions is unreacted. The unreacted titanium layer is removed. The substrate is subjected to a second annealing whereby the phase C40 titanium disilicide is transformed to phase C54 titanium disilicide to complete formation of a phase 54 titanium disilicide film in the manufacture of an integrated circuit.
摘要翻译：描述了在制造集成电路中形成C54相二硅化钛膜的新颖方法。提供具有要被硅化的硅区域的半导体衬底。沉积钛层以硅化硅层。对基板进行第一退火，由此将钛转化为相C40二硅化钛，其中它覆盖在硅区域上，并且其中不覆盖硅区域的钛是未反应的。去除未反应的钛层。对基板进行第二次退火，由此在制造集成电路中相C40二硅化钛转变为C54二硅化钛以完成形成54相的二硅化钛膜。

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