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1. 发明授权

US08514506B1 Disk drive comprising a dual read element and delay circuitry to improve read signal 有权
标题翻译：磁盘驱动器包括双重读取元件和延迟电路，以改善读取信号
公开(公告)号：US08514506B1
公开(公告)日：2013-08-20
申请号：US13371252
申请日：2012-02-10
申请人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
发明人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
IPC分类号： G11B5/09 , G11B20/10
CPC分类号： G11B5/3954 , G11B5/012 , G11B20/10009 , G11B20/10037 , G11B20/10046 , G11B20/10074 , G11B20/10175 , G11B20/10222 , G11B20/10231 , G11B20/10277 , G11B20/10305 , G11B20/10314 , G11B20/10379 , G11B20/1258 , G11B2220/2516
摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed in continuous time relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.
摘要翻译：公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。第一读取信号相对于第二读取信号以连续时间延迟，以产生延迟的读取信号，并且将第二读取信号与延迟的读取信号组合以产生组合的读取信号。从组合的读取信号中检测估计的数据序列。

2. 发明授权

US08139301B1 Disk drive comprising a dual read element and delay circuitry to improve read signal 有权
标题翻译：磁盘驱动器包括双重读取元件和延迟电路，以改善读取信号
公开(公告)号：US08139301B1
公开(公告)日：2012-03-20
申请号：US12507294
申请日：2009-07-22
申请人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
发明人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
IPC分类号： G11B5/09 , G11B20/10
CPC分类号： G11B5/3954 , G11B5/012 , G11B20/10009 , G11B20/10037 , G11B20/10046 , G11B20/10074 , G11B20/10175 , G11B20/10222 , G11B20/10231 , G11B20/10277 , G11B20/10305 , G11B20/10314 , G11B20/10379 , G11B20/1258 , G11B2220/2516
摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.
摘要翻译：公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。第一读取信号相对于第二读取信号被延迟以产生延迟的读取信号，并且第二读取信号与延迟的读取信号组合以产生组合的读取信号。从组合的读取信号中检测估计的数据序列。

3. 发明授权

US08194366B1 TMR read head structures with differential stripe heights 有权
标题翻译： TMR读取具有差分条纹高度的头结构
公开(公告)号：US08194366B1
公开(公告)日：2012-06-05
申请号：US12579315
申请日：2009-10-14
申请人： Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
发明人： Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , G01R33/098 , G11B5/3909 , H01L43/08 , H01L43/12
摘要： A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.
摘要翻译：公开了一种隧道磁阻（TMR）读头及其制造方法。提供具有自由层条纹高度的自由层，自由层具有第一侧和第二侧。隧道势垒层邻近自由层的第一侧形成，隧道势垒层具有第一侧和第二侧，隧道势垒层的第二面面向自由层的第一侧。在隧道势垒层的第一侧附近形成钉扎层。钉扎堆叠包括至少一个具有小于自由层条纹高度的电流路径条纹高度的磁性层。

4. 发明授权

US08194365B1 Method and system for providing a read sensor having a low magnetostriction free layer 有权
标题翻译：用于提供具有低磁致伸缩自由层的读取传感器的方法和系统
公开(公告)号：US08194365B1
公开(公告)日：2012-06-05
申请号：US12553897
申请日：2009-09-03
申请人： Qunwen Leng , Chando Park , Yimin Guo , Christian Kaiser , Mahendra Pakala , Sining Mao
发明人： Qunwen Leng , Chando Park , Yimin Guo , Christian Kaiser , Mahendra Pakala , Sining Mao
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/098 , H01L43/08 , H01L43/10
摘要： A method and system for providing a magnetic structure in magnetic transducer is described. The magnetic structure includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a first magnetic layer, a second magnetic layer, and a magnetic insertion layer between the first magnetic layer and the second magnetic layer. The first magnetic layer has a first magnetostriction. The second magnetic layer has a second magnetostriction opposite to the first magnetostriction. The magnetic insertion layer provides a growth texture barrier between the first magnetic layer and the second magnetic layer.
摘要翻译：描述了一种用于在磁换能器中提供磁结构的方法和系统。磁结构包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。自由层包括在第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和磁性插入层。第一磁性层具有第一磁致伸缩。第二磁性层具有与第一磁致伸缩相反的第二磁致伸缩。磁性插入层在第一磁性层和第二磁性层之间提供生长结构屏障。

5. 发明授权

US08498084B1 Magnetoresistive sensors having an improved free layer 有权
标题翻译：具有改进自由层的磁阻传感器
公开(公告)号：US08498084B1
公开(公告)日：2013-07-30
申请号：US12506978
申请日：2009-07-21
申请人： Qunwen Leng , Christian Kaiser , Yimin Guo , Mahendra Pakala , Sining Mao
发明人： Qunwen Leng , Christian Kaiser , Yimin Guo , Mahendra Pakala , Sining Mao
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , G11B5/3909 , G11B5/3912
摘要： A magnetoresistive sensor having a novel free layer and a method of producing the same are disclosed. The magnetoresistive sensor comprises a pinned layer, a barrier layer disposed over the pinned layer, and a free layer disposed over the barrier layer. The free layer comprises a first magnetic layer disposed over the barrier layer. The first magnetic layer has a positive spin polarization, a positive magnetostriction, and a polycrystalline structure. The free layer further comprises a second magnetic layer disposed over the first magnetic layer. The second magnetic layer has a negative magnetostriction and comprises at least cobalt (Co) and boron (B).
摘要翻译：公开了一种具有新型自由层的磁阻传感器及其制造方法。磁阻传感器包括被钉扎层，设置在钉扎层上的阻挡层和设置在阻挡层上的自由层。自由层包括设置在阻挡层上的第一磁性层。第一磁性层具有正自旋极化，正磁致伸缩和多晶结构。自由层还包括设置在第一磁性层上的第二磁性层。第二磁性层具有负的磁致伸缩，并且至少包括钴（Co）和硼（B）。

6. 发明授权

US08599520B1 Method and system for providing a read transducer having an adaptive read sensor track width 有权
标题翻译：用于提供具有自适应读取传感器轨道宽度的读取换能器的方法和系统
公开(公告)号：US08599520B1
公开(公告)日：2013-12-03
申请号：US13332275
申请日：2011-12-20
申请人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
发明人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G11B5/398 , G01R33/09 , G01R33/093 , G11B5/3912 , G11B5/3932
摘要： A method and system provide a magnetic read transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a second shield, and a read sensor between the first shield and the second shield. The read sensor extends along a stripe height direction perpendicular to the ABS. A first portion of the read sensor at the ABS has a first width in a track width direction parallel to the ABS. A second portion of the read sensor is recessed from the ABS along the stripe height direction and has a second width in the track width direction. The second width is greater than the first width.
摘要翻译：一种方法和系统提供具有空气轴承表面（ABS）的磁读取换能器。磁换能器包括在第一屏蔽和第二屏蔽之间的第一屏蔽，第二屏蔽和读取传感器。读取传感器沿垂直于ABS的条带高度方向延伸。 ABS处的读取传感器的第一部分具有平行于ABS的轨道宽度方向上的第一宽度。读取传感器的第二部分沿着条带高度方向从ABS凹入，并且在轨道宽度方向上具有第二宽度。第二宽度大于第一宽度。

7. 发明申请

US20220278270A1 MAGNETORESISTIVE ELEMENT HAVING AN ADJACENT-BIAS LAYER AND A TOGGLE WRITING SCHEME 有权
公开(公告)号：US20220278270A1
公开(公告)日：2022-09-01
申请号：US17187864
申请日：2021-02-28
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/02 , H01L27/22 , H01L43/10 , G11C11/16
摘要： A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction. Further, there is provided a toggle writing method of the perpendicular magnetoresistive element comprises: applying a first write pulse having a first voltage magnitude and a first pulse width to reverse the adjacent-bias layer magnetization direction to be anti-parallel to the free layer magnetization direction by spin-transfer-torque effect, and applying a second write pulse having a second voltage magnitude and a second pulse width to reverse the free layer magnetization direction to be parallel to the adjacent-bias layer magnetization direction by voltage-controlled magnetic anisotropy effect under the magnetic dipole bias field from the adjacent-bias layer.

8. 发明授权

US10937958B2 Magnetoresistive element having a novel cap multilayer 有权
公开(公告)号：US10937958B2
公开(公告)日：2021-03-02
申请号：US16686081
申请日：2019-11-15
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/12 , H01L43/02 , H01L43/10 , H01L27/22 , H01L43/14 , H01L43/06
摘要： A method of forming a magnetoresistive element comprises of forming a novel Boron-absorbing cap layer provided on the top surface of an amorphous CoFeB (or CoB, FeB) ferromagnetic recording layer. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface of the tunnel barrier layer as Boron elements migrate into the novel Boron-absorbing cap layer. Removing the top portion of the Boron-absorbing cap layer by means of sputtering etch or RIE etch processes followed by optional oxidization process, a thin thermally stable portion of cap layer is remained on top of the recording layer with low damping constant. Accordingly, a reduced write current is achieved for spin-transfer torque MRAM application.

9. 发明授权

US10672977B2 Perpendicular magnetoresistive elements 审中-公开
公开(公告)号：US10672977B2
公开(公告)日：2020-06-02
申请号：US14063204
申请日：2013-10-25
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/10 , H01L43/08
摘要： A perpendicular magnetoresistive element includes a novel recording layer being a multi-layer comprising a first Co-alloy layer including at least one of CoFeB, CoFeB/CoFe and CoFe/CoFeB, a second Co-alloy layer including at least one of CoFeB and CoB, an insertion layer provided between the first Co-alloy layer and the second Co-alloy layer and containing at least one element selected from Zr, Nb, W, Mo, Ru and having a thickness less than 0.5 nm, and a novel buffer layer having rocksalt crystal structure(s) interfacing to the recording layer with lattice parameter mismatch between 3% and 18%. The magnetoresistive element is annealed at an elevated temperature and both the first Co-alloy layer and the second Co-alloy layer are crystallized to form body-center cubic (bcc) CoFe or bcc Co grain having epitaxial growth with (100) plane parallel to substrate and with in-plane expansion and out-of-plane contraction.

10. 发明申请

US20160225982A1 MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：具有螺旋桨效应写字板的MRAM及其制作方法
公开(公告)号：US20160225982A1
公开(公告)日：2016-08-04
申请号：US14611083
申请日：2015-01-30
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/14 , H01L27/22 , H01L43/06 , H01L43/04 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/18 , H01L43/08 , H01L43/12
摘要： A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.
摘要翻译：自旋转移 - 转矩磁阻存储器包括制造具有高导电性底部电极的三端子磁阻存储元件的装置和方法，其覆盖在MTJ堆叠外的区域中的SHE-金属层的顶部。存储单元包括位于与多个磁阻存储元件中选定的磁阻存储元件相邻的位线，以在磁阻元件堆叠上提供读取电流，并且两个高度导电的底部电极重叠并电接触外部的SHE-金属层的顶部并提供双向旋转霍尔效应记录电流，并因此切换记录层的磁化。因此，通过施加低写入电流，记录层的磁化可以容易地根据沿着SHE-金属层的电流的方向切换或反向。

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