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1. 发明授权

CN101416314B 多重铁性层、含该层的结构，及形成该层及该结构的方法失效
公开(公告)号：CN101416314B
公开(公告)日：2012-05-30
申请号：CN200780012344.2
申请日：2007-02-16
申请人：首尔大学校产学协力团
发明人：卢泰元 , 尹钟杰 , 李桢赫
IPC分类号： H01L27/105
CPC分类号： H01L21/02194 , C30B23/02 , C30B23/025 , C30B29/22 , H01F1/407 , H01F10/002 , H01G4/10 , H01G4/1272 , H01G7/06 , H01L21/02192 , H01L21/02266 , H01L21/31691 , H01L28/56 , H01L41/16 , H01L43/10 , Y10T428/325
摘要：本发明涉及将下述式(1)表示的材料形成具有六方晶体结构的层，其不同于该材料体相的斜方晶体结构，因此通过获得增强的多重铁性，该材料比传统的多重铁性材料可更有效地用于要求多重铁性的各种领域。RMnO3，(R代表镧系元素)...(1)。

2. 发明公开

CN101416314A 多重铁性层、含该层的结构，及形成该层及该结构的方法失效
公开(公告)号：CN101416314A
公开(公告)日：2009-04-22
申请号：CN200780012344.2
申请日：2007-02-16
申请人：首尔大学校产学协力团
发明人：卢泰元 , 尹钟杰 , 李桢赫
IPC分类号： H01L27/105
CPC分类号： H01L21/02194 , C30B23/02 , C30B23/025 , C30B29/22 , H01F1/407 , H01F10/002 , H01G4/10 , H01G4/1272 , H01G7/06 , H01L21/02192 , H01L21/02266 , H01L21/31691 , H01L28/56 , H01L41/16 , H01L43/10 , Y10T428/325
摘要：本发明涉及将下述式(1)表示的材料形成具有六方晶体结构的层，其不同于该材料体相的斜方晶体结构，因此通过获得增强的多重铁性，该材料比传统的多重铁性材料可更有效地用于要求多重铁性的各种领域。RMnO3，(R代表镧系元素) …(1)。

3. 发明公开

EP2364499A1 PROCEDE DE FABRICATION D'UNE COUCHE D'UN MATERIAU ANTIFERROMAGNETIQUE A STRUCTURES MAGNETIQUES CONTROLEES 审中-公开
标题翻译：用于生产薄膜由磁性材料具有受控反铁磁结构
公开(公告)号：EP2364499A1
公开(公告)日：2011-09-14
申请号：EP09756160.9
申请日：2009-10-13
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： BARBIER, Antoine , BEZENCENET, Odile , BONAMY, Daniel
IPC分类号： H01F10/20 , H01F10/32 , H01F41/30
CPC分类号： H01F41/32 , B82Y25/00 , B82Y40/00 , H01F10/002 , H01F41/14 , H01F41/302 , H01F41/303 , Y10T428/325
摘要： The present invention relates to a process for fabricating antiferromagnetic films, and more particularly those that are used in spintronics. The process according to the invention comprises the following steps: deposition (1) on a substrate of a first film with a thickness sufficient to establish a defined magnetic order from one of the ferrimagnetic, ferromagnetic, paramagnetic and diamagnetic orders; after said order has been established, application (2) of a magnetic field having an amplitude and a duration that are sufficient to shift the magnetic domain walls of said first film from a first random distribution to a second random distribution; and deposition (3), on said first film that has had its magnetic domain walls shifted, of a second film of an antiferromagnetic material into which, during growth, at least one of the components of material of said first film may be integrated by diffusion.

4. 发明公开

EP0788120A1 Articles comprising magnetically soft thin films and methods for making such articles 失效
标题翻译： Gegenständemit weichmagnetischenDünnschichtenund ihr Herstellungsverfahren
公开(公告)号：EP0788120A1
公开(公告)日：1997-08-06
申请号：EP97300373.4
申请日：1997-01-21
申请人： Lucent Technologies Inc.
发明人： Chen, Li-Han , Zhu, Wei , Jin, Sungho , van Dover, Robert Bruce
IPC分类号： H01F10/14
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/1878 , G11B5/3109 , G11B5/3903 , G11B5/3906 , H01F10/002 , H01F10/08 , H01F10/13 , H01F10/138 , H01F10/147 , H01F10/3204 , H01F10/3254 , H01F17/0033 , H01F41/302 , Y10S428/90 , Y10T428/115
摘要： The invention is embodied in a soft magnetic thin film article comprising an iron-chromium-nitrogen (Fe-Cr-N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron-chromium-nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150°C). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.
摘要翻译：本发明体现在一种包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品及其制造方法。软磁性薄膜制品在一个实施方案中使用具有钽的铁 - 铬 - 氮基合金和钛（Ti），锆（Zr），铪（Hf），钒（V），钼（Mo），铌（Nb）或钨（W）。制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对低的矫顽力（例如，小于约2.0奥斯特），或者替代地，低温处理（如低于约150℃）。本发明的膜适用于电磁装置，例如在微型变压器铁芯，电感器芯和磁读写头中。

5. 发明授权

US09718700B2 Magnetoelectric chromia having increased critical temperature 有权
公开(公告)号：US09718700B2
公开(公告)日：2017-08-01
申请号：US14629178
申请日：2015-02-23
申请人： Board of Regents of the University of Nebraska
发明人： Christian Binek , Peter Dowben , Kirill Belashchenko , Aleksander Wysocki , Sai Mu , Mike Street
IPC分类号： H01F1/01 , C01G37/027 , H01F1/00 , H01L43/08 , H01L43/12 , H01F10/00 , H01F10/32
CPC分类号： C01G37/027 , C01P2002/50 , C01P2002/72 , H01F1/0009 , H01F10/002 , H01F10/3268 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoelectric composition of boron and chromia is provided. The boron and chromia alloy can contain boron doping of 1%-10% in place of the oxygen in the chromia. The boron-doped chromia exhibits an increased critical temperature while maintaining magnetoelectric characteristics. The composition can be fabricated by depositing chromia in the presence of borane. The boron substitutes oxygen in the chromia, enhancing the exchange energy and thereby increasing Néel temperature.

6. 发明授权

US09577180B2 Electrostatically controlled magnetic logic device 有权
标题翻译：静电控制磁逻辑器件
公开(公告)号：US09577180B2
公开(公告)日：2017-02-21
申请号：US14608348
申请日：2015-01-29
申请人： International Business Machines Corporation , The Board of Trustees of the University of Alabama
发明人： Marcin J. Gajek , Daniel C. Worledge , William H. Butler
IPC分类号： H01L21/00 , H01L43/02 , H01L43/12 , H01L43/08 , H01L43/10 , H03K19/168 , H01F10/00
CPC分类号： H01L43/02 , H01F10/002 , H01L43/08 , H01L43/10 , H01L43/12 , H03K19/168
摘要： A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
摘要翻译：磁逻辑单元包括第一电极部分，布置在第一电极上的磁性部分，磁性部分包括反铁磁材料或铁磁材料，布置在磁性部分上的电介质部分和布置在磁性部分上的第二电极部分电介质部分。

7. 发明申请

US20040151947A1 Data storage medium with laterally magnetised pad and method for making same 失效
标题翻译：具有横向磁化垫的数据存储介质及其制造方法
公开(公告)号：US20040151947A1
公开(公告)日：2004-08-05
申请号：US10482465
申请日：2003-12-31
发明人： Bernard Rodmacq , Stephane Landis , Bernard Dieny
IPC分类号： G11B005/66
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/09 , G11B5/74 , G11B5/743 , G11B5/82 , G11B5/855 , G11C11/14 , H01F10/002 , H01F10/3218 , H01F10/3286 , H01F41/308
摘要： An information storage medium with an array of laterally magnetised dots, as well as a process for producing this medium. Each dot (2) contains at least one magnetic domain formed by a thin layer (4) of at least a magnetic material laterally covering this flat material and deposited at oblique incidence relative to the normal (z) to the plane (6) of the array. The invention applies in particular to computer hard drives.
摘要翻译：具有横向磁化点阵列的信息存储介质，以及用于生产该介质的方法。每个点（2）包含至少一个由至少一个磁性材料的薄层（4）形成的磁畴，横向覆盖该平坦材料并相对于法线（z）以数组。本发明特别适用于计算机硬盘驱动器。

8. 发明授权

US3741823A Method of forming first order transition films 失效
标题翻译：形成一阶转换膜的方法
公开(公告)号：US3741823A
公开(公告)日：1973-06-26
申请号：US3741823D
申请日：1970-10-26
申请人： GEN ELECTRIC
发明人： LOMMEL J
IPC分类号： G11B13/04 , H01F10/32 , H01F1/02
CPC分类号： B82Y25/00 , G11B13/045 , H01F10/002 , H01F10/325
摘要： THIN FILMS OF ION-RHODIUM EXHIBITING A BROADLY HYSTERIC FIRST ORDER TRANSISTION BETWEEN THE FERROMAGNETIC AND ANTIFERROMAGNETIC STATES ARE PRODUCED BY SEQUENTIALLY DEPOSITING IRON AND RHODIUM FILMS UPON A REFRACTORY SUBSTRATE AT A PRESSURE IN THE RANGE OF 1X10**-6 TORR, ANNEALING THE STRUCTURE IN A VACUUM OF 1X10**-6 TORR AT A TEMPERATURE OF APPROXIMATELY 700* C. FOR 1 HOUR TO PRODUCE A COMPLETE DIFFUSION OF THE IRON AND RHODIUM LAYERS, AND SUBSEQUENTLY SUBJECTING THE DIFFUSED LAYERS TO A SECOND ANNEAL IN AN ATMOSPHERE GREATER THAN 10 PARTS PER MILLION OXYGEN IN A THERMAL CYCLE THAT INCLUDES SLOWLY HEATING THE STRUCTURE TO 400* C., MAINTAINING THE 400* C. FOR APPROXIMATELY 10 MINUTES AND SLOWLY COOLING TO ROOM TEMPERATURE. FILMS THUS FORMED ARE ADVANTAGEOUSLY EMPOLYED IN THE RECORDING OF DIGITAL INFORMATION BY ELECTRON BEAM HEATING INDIVIDUAL REGIONS THROUGH A FIRST ORDER TRANSISTION TO THE FERROMAGNETIC STATE WHEREUPON THE REGIONS ARE PERMITTED TO COOL TO A BIASING TEMPERATURE SLIGHTLY HIGHER THAN THE TEMPERATURE OF TRANSISTION BACK TO AN ANTIFEROMAGNETIC STATE. A MAGNETIC FIELD THEN IS APPLIED TO THE ENTIRE FILM TO MAGNETIZE ONLY THOSE REGIONS OF THE FILM IN THE FERROMAGNETIC STATE AND READOUT OF THE RECORDED INFORMATION CAN BE ACHIEVED BY CONVENTIONAL ELECTRON BEAM MICROSCOPY. THE FERROMAGNETISM OF THE FILM SUBSEQUENTLY CAN BE ERASED BY COOLING THE FILM BELOW THE TRANSISTION TEMPERATURE TO THE ANTIFERROMAGNETIC STATE OR BY THE APPLICATION OF A STRAIN TO THE FILM.

9. 发明公开

EP3001470A1 Antiferromagnetic memory device 有权
标题翻译：反铁磁性研究
公开(公告)号：EP3001470A1
公开(公告)日：2016-03-30
申请号：EP14186900.8
申请日：2014-09-29
申请人： Hitachi, Ltd.
发明人： Wunderlich, Joerg , Marti, Xavier , Jungwirth, Tomas
IPC分类号： H01L43/00 , G11C11/16 , H01L43/10
CPC分类号： H01L43/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/002 , H01L43/10
摘要： An antiferromagnetic memory device (1) is described. The memory device comprises an antiferromagnetic region (4) having a broken inversion symmetry along an axis (5), for example, by virtue of having bulk broken inversion symmetry in part of the unit cell corresponding to the antiferromagnetic spin sublattice or in the full unit cell or by virtue of being sufficiently thin and having broken structural inversion symmetry. The antiferromagnetic region (4) may comprise di-manganese gold (Mn 2 Au). The antiferromagnetic region (4) has an antiferromagnetic spin axis (6) which is selectively orientable along first and second easy axes (7 1 , 7 2 ) which are not parallel to the axis along which inversion symmetry is broken. The memory device also comprises a conductive channel configured to define a conductive path (10 1 ) through the antiferromagnetic region which is substantially not parallel to the axis along which inversion symmetry is broken or the device comprises a conductive path (50 1 ) through a paramagnetic or diamagnetic region adjacent to the antiferromagnetic region so as to cause spin-polarised current to diffuse into the antiferromagnetic region.
摘要翻译：描述了反铁磁存储器件（1）。存储器件包括具有沿着轴线（5）具有破坏的反转对称性的反铁磁区域（4），例如，由于在对应于反铁磁自旋子晶格的单位单元的一部分中具有体积破碎的反转对称，或者在整个单元或者由于足够薄并具有断裂的结构反演对称性。反铁磁性区域（4）可以包含二锰金（Mn 2 Au）。反铁磁区域（4）具有反铁磁旋转轴线（6），该反铁磁旋转轴线可以沿着第一和第二容易轴（7a，7b）选择性地定向，所述第一和第二容易轴线不平行于反转对称性被破坏的轴线。存储器件还包括导电通道，其被配置为通过反铁磁区域限定导电路径（10 1），所述反铁磁区域基本上不平行于反转对称性断开的轴线，或者该器件包括通过顺磁性的导电路径（50 1）或与反铁磁性区域相邻的抗磁性区域，以使自旋极化电流扩散到反铁磁性区域。

10. 发明公开

EP1407449A1 SUPPORT DE STOCKAGE D'INFORMATIONS A RESEAU DE PLOTS AIMANTES LATERALEMENT ET PROCEDE DE FABRICATION DE CE SUPPORT. 有权
标题翻译：同方磁化联络点和方式数据存储设备
公开(公告)号：EP1407449A1
公开(公告)日：2004-04-14
申请号：EP02764938.3
申请日：2002-07-02
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人： RODMACQ, Bernard , LANDIS, Stéphane , DIENY, Bernard
IPC分类号： G11B5/74 , G11B5/855 , G11B5/82 , G11B5/09
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/09 , G11B5/74 , G11B5/743 , G11B5/82 , G11B5/855 , G11C11/14 , H01F10/002 , H01F10/3218 , H01F10/3286 , H01F41/308
摘要： The invention concerns a data storage medium with laterally magnetised pads and a method for making same. Each pad (2) contains at least a magnetic field consisting of a thin film (4) of at least a magnetic material laterally covering said pad and deposited under oblique incidence relative to the normal (z) of the plane (6) of the array. The invention is particularly applicable to computer hard discs.

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