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1. 发明授权

US07313010B2 Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory 有权
标题翻译：用于产生1T / 1C铁电存储器的居中参考电压的电路
公开(公告)号：US07313010B2
公开(公告)日：2007-12-25
申请号：US11426165
申请日：2006-06-23
申请人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
发明人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/12 , G11C7/14
摘要： A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.
摘要翻译：铁电参考电路产生与（P + U）/ 2成比例的参考电压，并且在宽温度和电压范围内自动居中对应于P项和U项的位线电压。为了避免产生（P + U）/ 2的参考铁电电容器疲劳，参考电压每毫秒刷新一次。为了消除在这段时间内由于铁电电容器的泄漏引起的参考电压的变化，当刷新时，从参考铁电电容器产生的参考电压被数字化。数字值被固定并转换为模拟值，然后将其馈送到读出放大器中以解析数据状态。参考电压自动处于开关（P）和非开关（U）信号的中心，因此信号余量最大化。

2. 发明申请

US20060098470A1 Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory 有权
公开(公告)号：US20060098470A1
公开(公告)日：2006-05-11
申请号：US10984065
申请日：2004-11-09
申请人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
发明人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
IPC分类号： G11C11/22 , G11C5/14
CPC分类号： G11C11/22 , G11C7/12 , G11C7/14
摘要： A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.

3. 发明申请

US20060245286A1 CIRCUIT FOR GENERATING A CENTERED REFERENCE VOLTAGE FOR A 1T/1C FERROELECTRIC MEMORY 有权
标题翻译：用于生成1T / 1C电磁存储器的中心参考电压的电路
公开(公告)号：US20060245286A1
公开(公告)日：2006-11-02
申请号：US11426165
申请日：2006-06-23
申请人： Shan SUN , Xiao-Hong Du , Fan Chu , Bob Sommervold
发明人： Shan SUN , Xiao-Hong Du , Fan Chu , Bob Sommervold
IPC分类号： G11C7/02
CPC分类号： G11C11/22 , G11C7/12 , G11C7/14
摘要： A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.
摘要翻译：铁电参考电路产生与（P + U）/ 2成比例的参考电压，并且在宽温度和电压范围内自动居中对应于P项和U项的位线电压。为了避免产生（P + U）/ 2的参考铁电电容器疲劳，参考电压每毫秒刷新一次。为了消除在这段时间内由于铁电电容器的泄漏引起的参考电压的变化，当刷新时，从参考铁电电容器产生的参考电压被数字化。数字值被固定并转换为模拟值，然后将其馈送到读出放大器中以解析数据状态。参考电压自动处于开关（P）和非开关（U）信号的中心，因此信号余量最大化。

4. 发明授权

US07116572B2 Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory 有权
标题翻译：用于产生1T / 1C铁电存储器的居中参考电压的电路
公开(公告)号：US07116572B2
公开(公告)日：2006-10-03
申请号：US10984065
申请日：2004-11-09
申请人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
发明人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/12 , G11C7/14
摘要： A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.
摘要翻译：铁电参考电路产生与（P + U）/ 2成比例的参考电压，并且在宽温度和电压范围内自动居中对应于P项和U项的位线电压。为了避免产生（P + U）/ 2的参考铁电电容器疲劳，参考电压每毫秒刷新一次。为了消除在这段时间内由于铁电电容器的泄漏引起的参考电压的变化，当刷新时，从参考铁电电容器产生的参考电压被数字化。数字值被固定并转换为模拟值，然后将其馈送到读出放大器中以解析数据状态。参考电压自动处于开关（P）和非开关（U）信号的中心，因此信号余量最大化。

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