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1. 发明授权

US08552515B2 Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps 有权
标题翻译：用于制造使用减少的处理步骤的镶嵌自对准铁电随机存取存储器（F-RAM）器件结构的方法
公开(公告)号：US08552515B2
公开(公告)日：2013-10-08
申请号：US13569735
申请日：2012-08-08
申请人： Shan Sun , Thomas E. Davenport , John Cronin
发明人： Shan Sun , Thomas E. Davenport , John Cronin
IPC分类号： H01L21/02
CPC分类号： H01L27/11507 , H01L28/55 , H01L28/75
摘要： Disclosed is a novel non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating a damascene self-aligned F-RAM device structure on a planar surface using a reduced number of masks and etching steps.
摘要翻译：公开了一种新颖的非易失性铁电随机存取存储器（F-RAM）器件和一种使用减少数量的掩模和蚀刻步骤在平面上制造镶嵌自对准F-RAM器件结构的方法。

2. 发明授权

US08518791B2 Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitors 有权
标题翻译：制造镶嵌自对准铁电随机存取存储器（F-RAM）的方法，同时形成侧壁铁电电容器
公开(公告)号：US08518791B2
公开(公告)日：2013-08-27
申请号：US13569755
申请日：2012-08-08
申请人： Shan Sun , Thomas E. Davenport , John Cronin
发明人： Shan Sun , Thomas E. Davenport , John Cronin
IPC分类号： H01L21/20
CPC分类号： H01L27/11502 , H01L27/11504 , H01L28/55 , H01L28/90
摘要： Disclosed is a non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating the same in the form of a damascene self-aligned F-RAM device comprising a PZT capacitor built on the sidewalls of an oxide trench, while allowing for the simultaneous formation of two ferroelectric sidewall capacitors.
摘要翻译：公开了一种非易失性铁电随机存取存储器（F-RAM）器件及其制造方法，其形式为镶嵌自对准的F-RAM器件，其包括内置于氧化物沟槽的侧壁上的PZT电容器，同时允许同时形成两个铁电侧壁电容器。

3. 发明申请

US20130300003A1 Enhanced Hydrogen Barrier Encapsulation Method for the Control of Hydrogen Induced Degradation of Ferroelectric Capacitors in an F-RAM Process 有权
标题翻译：用于控制F-RAM工艺中铁电电容器氢诱导降解的增强型氢屏障封装方法
公开(公告)号：US20130300003A1
公开(公告)日：2013-11-14
申请号：US13470117
申请日：2012-05-11
申请人： Shan Sun , Thomas E. Davenport
发明人： Shan Sun , Thomas E. Davenport
IPC分类号： H01L23/28 , H01L21/56
CPC分类号： H01L28/40 , H01L23/291 , H01L27/11502 , H01L27/11507 , H01L28/57 , H01L2924/0002 , H01L2924/00
摘要： A method of encapsulating a ferroelectric capacitor or ferroelectric memory cell includes forming encapsulation materials adjacent to a ferroelectric capacitor. forming a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and forming an FEO encapsulation layer over the ferroelectric oxide to provide additional protection from hydrogen induced degradation.
摘要翻译：封装铁电电容器或铁电存储单元的方法包括形成与铁电电容器相邻的封装材料。在封装的铁电电容器上形成铁电氧化物（FEO）层，并在铁电氧化物上形成一个FEO封装层，以提供额外的防止氢诱导退化的保护。

4. 发明申请

US20130037897A1 METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) DEVICE STRUCTURE EMPLOYING REDUCED PROCESSING STEPS 有权
标题翻译：用于制造自动对准的自对准随机访问存储器（F-RAM）的设备结构的方法使用减少的处理步骤
公开(公告)号：US20130037897A1
公开(公告)日：2013-02-14
申请号：US13569735
申请日：2012-08-08
申请人： Shan Sun , Thomas E. Davenport , John Cronin
发明人： Shan Sun , Thomas E. Davenport , John Cronin
IPC分类号： H01L21/02 , H01L29/82
CPC分类号： H01L27/11507 , H01L28/55 , H01L28/75
摘要： Disclosed is a novel non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating a damascene self-aligned F-RAM device structure on a planar surface using a reduced number of masks and etching steps.
摘要翻译：公开了一种新颖的非易失性铁电随机存取存储器（F-RAM）器件和一种使用减少数量的掩模和蚀刻步骤在平面上制造镶嵌自对准F-RAM器件结构的方法。

5. 发明申请

US20130037912A1 METHOD FOR FABRICATING A DAMASCENE SELF-ALIGNED FERROELECTRIC RANDOM ACCESS MEMORY (F-RAM) WITH SIMULTANEOUS FORMATION OF SIDEWALL FERROELECTRIC CAPACITORS 有权
标题翻译：用于制造同时形成侧壁电容器的丹麦自对准的电磁随机存取存储器（F-RAM）的方法
公开(公告)号：US20130037912A1
公开(公告)日：2013-02-14
申请号：US13569755
申请日：2012-08-08
申请人： Shan Sun , Thomas E. Davenport , John Cronin
发明人： Shan Sun , Thomas E. Davenport , John Cronin
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/11502 , H01L27/11504 , H01L28/55 , H01L28/90
摘要： Disclosed is a non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating the same in the form of a damascene self-aligned F-RAM device comprising a PZT capacitor built on the sidewalls of an oxide trench, while allowing for the simultaneous formation of two ferroelectric sidewall capacitors.
摘要翻译：公开了一种非易失性铁电随机存取存储器（F-RAM）器件及其制造方法，其形式为镶嵌自对准的F-RAM器件，其包括内置于氧化物沟槽的侧壁上的PZT电容器，同时允许同时形成两个铁电侧壁电容器。

6. 发明授权

US08916434B2 Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process 有权
标题翻译：用于控制F-RAM工艺中铁电电容器氢诱导退化的增强氢气阻挡封装方法
公开(公告)号：US08916434B2
公开(公告)日：2014-12-23
申请号：US13470117
申请日：2012-05-11
申请人： Shan Sun , Thomas E. Davenport
发明人： Shan Sun , Thomas E. Davenport
IPC分类号： H01L29/76
CPC分类号： H01L28/40 , H01L23/291 , H01L27/11502 , H01L27/11507 , H01L28/57 , H01L2924/0002 , H01L2924/00
摘要： A method of encapsulating a ferroelectric capacitor or ferroelectric memory cell includes forming encapsulation materials adjacent to a ferroelectric capacitor. forming a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and forming an FEO encapsulation layer over the ferroelectric oxide to provide additional protection from hydrogen induced degradation.
摘要翻译：封装铁电电容器或铁电存储单元的方法包括形成与铁电电容器相邻的封装材料。在封装的铁电电容器上形成铁电氧化物（FEO）层，并在铁电氧化物上形成一个FEO封装层，以提供额外的防止氢诱导退化的保护。

7. 发明授权

US08518792B2 Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structure 有权
标题翻译：用于制造具有与三维晶体管结构对准的铁电电容器的镶嵌自对准铁电随机存取存储器（F-RAM）的方法
公开(公告)号：US08518792B2
公开(公告)日：2013-08-27
申请号：US13569785
申请日：2012-08-08
申请人： Shan Sun , Thomas E. Davenport , John Cronin
发明人： Shan Sun , Thomas E. Davenport , John Cronin
IPC分类号： H01L21/20
CPC分类号： H01L43/02 , H01L27/11504 , H01L27/11507 , H01L27/228
摘要： Disclosed is a non-volatile, ferroelectric random access memory (F-RAM) device and a method for fabricating a damascene self-aligned F-RAM that allows for the formation of a ferroelectric capacitor with separated PZT layers aligned with a preexisting, three dimensional (3-D) transistor structure.
摘要翻译：公开了一种非易失性铁电随机存取存储器（F-RAM）装置和一种用于制造镶嵌自对准F-RAM的方法，其允许形成具有与预先存在的三维对准的分离的PZT层的铁电电容器（3-D）晶体管结构。

8. 发明授权

US06674633B2 Process for producing a strontium ruthenium oxide protective layer on a top electrode 有权
标题翻译：在顶部电极上生产锶氧化钌保护层的方法
公开(公告)号：US06674633B2
公开(公告)日：2004-01-06
申请号：US09797005
申请日：2001-02-28
申请人： Shan Sun , George Hickert , Katsuyoshi Matsuura , Takeyasu Saito , Soichiro Ozawa , Naoyuki Satoh , Mitsushi Fujiki , Satoru Mihara , Jeffrey S. Cross , Yoshimasa Horii
发明人： Shan Sun , George Hickert , Katsuyoshi Matsuura , Takeyasu Saito , Soichiro Ozawa , Naoyuki Satoh , Mitsushi Fujiki , Satoru Mihara , Jeffrey S. Cross , Yoshimasa Horii
IPC分类号： H01G406
CPC分类号： H01L28/75 , H01L28/55
摘要： A method for the fabrication of a cap layer on a top electrode layer of a ferroelectric capacitor includes the steps of depositing an amorphous layer, usually made of Sr(x)Ru(y)O3, on the top electrode and then annealing the amorphous layer in two stages in order convert the amorphous layer into the cap layer. The first anneal is performed at 500° C. to 700° C. in a non-oxidizing atmosphere, such as nitrogen, and converts the amorphous layer into a crystallized layer of Sr(x)Ru(y)O3. The second anneal is performed at 300° C. to 500° C. in an oxidizing atmosphere, such as oxygen, and converts the crystallized layer into the cap layer. The method is applied to the formation of a ferroelectric capacitor element of an integrated semiconductor device.
摘要翻译：在强电介质电容器的顶部电极层上制造覆盖层的方法包括以下步骤：在顶部电极上沉积通常由Sr（x）Ru（y）O 3制成的非晶层，然后退火非晶层在两个阶段中，为了将非晶层转化成盖层。在非氧化性气氛如氮气中，在500〜700℃下进行第一退火，并将非晶层转化为Sr（x）Ru（y）O 3的结晶层。第二次退火在氧化气氛如氧气中在300℃至500℃下进行，并将结晶层转化成盖层。该方法适用于集成半导体器件的铁电电容器元件的形成。

9. 发明授权

US06238933B1 Polarization method for minimizing the effects of hydrogen damage on ferroelectric thin film capacitors 失效
标题翻译：用于最小化氢损伤对铁电薄膜电容器的影响的极化方法
公开(公告)号：US06238933B1
公开(公告)日：2001-05-29
申请号：US09305949
申请日：1999-05-06
申请人： Shan Sun , Steven D. Traynor
发明人： Shan Sun , Steven D. Traynor
IPC分类号： H01L2100
CPC分类号： H01L28/55
摘要： Ferroelectric switching properties are severely degraded in a hydrogen ambient atmosphere. By controlling the polarity of the capacitors in a ferroelectric memory during the manufacturing process, the amount of degradation can be significantly reduced. After metalization of a ferroelectric memory wafer, all of the ferroelectric capacitors are poled in the same direction. The polarization vector is in a direction that helps to counteract hydrogen damage. A hydrogen gas anneal is subsequently performed to control underlying CMOS structures while maintaining ferroelectric electrical properties. The wafer is then passivated and tested.
摘要翻译：铁电开关性质在氢环境气氛中严重降解。通过在制造过程中通过控制铁电存储器中的电容器的极性，可以显着降低劣化量。在铁电存储晶片的金属化之后，所有铁电电容器都沿同一方向极化。极化矢量在有助于抵消氢损伤的方向上。随后进行氢气退火以控制底层CMOS结构，同时保持铁电性能。然后将晶片钝化并测试。

10. 发明授权

US07116572B2 Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory 有权
标题翻译：用于产生1T / 1C铁电存储器的居中参考电压的电路
公开(公告)号：US07116572B2
公开(公告)日：2006-10-03
申请号：US10984065
申请日：2004-11-09
申请人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
发明人： Shan Sun , Xiao-Hong Du , Fan Chu , Bob Sommervold
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/12 , G11C7/14
摘要： A ferroelectric reference circuit generates a reference voltage proportional to (P+U)/2 and is automatically centered between the bit line voltages corresponding to the P term and the U term across wide temperature and voltage ranges. To avoid fatiguing the reference ferroelectric capacitors generating (P+U)/2, the reference voltage is refreshed once every millisecond. To eliminate the variation of the reference voltage due to the leakage in the ferroelectric capacitors during this period of time, the reference voltage generated from the reference ferroelectric capacitors is digitized when it is refreshed. The digital value is fixed and converted to an analog value which is then fed into sense amplifiers for resolving the data states. The reference voltage is automatically at the center of the switching (P) and non-switching (U) signals and therefore the signal margin is maximized.
摘要翻译：铁电参考电路产生与（P + U）/ 2成比例的参考电压，并且在宽温度和电压范围内自动居中对应于P项和U项的位线电压。为了避免产生（P + U）/ 2的参考铁电电容器疲劳，参考电压每毫秒刷新一次。为了消除在这段时间内由于铁电电容器的泄漏引起的参考电压的变化，当刷新时，从参考铁电电容器产生的参考电压被数字化。数字值被固定并转换为模拟值，然后将其馈送到读出放大器中以解析数据状态。参考电压自动处于开关（P）和非开关（U）信号的中心，因此信号余量最大化。

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