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1. 发明申请

US20060024616A1 Basic quencher/developer solutions for photoresists 失效
标题翻译：用于光致抗蚀剂的基本猝灭剂/显影剂溶液
公开(公告)号：US20060024616A1
公开(公告)日：2006-02-02
申请号：US11143126
申请日：2005-06-01
申请人： Shan Clark , Kim-Khanh Ho , James Clarke , Ernisse Putna , Wang Yueh , Robert Meagley
发明人： Shan Clark , Kim-Khanh Ho , James Clarke , Ernisse Putna , Wang Yueh , Robert Meagley
IPC分类号： G03C5/00
CPC分类号： G03F7/327
摘要： A basic developer/quencher solution formulated to include at least one supercritical fluid or liquid solvent and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The supercritical fluid or liquid solvent may be carbon dioxide and the base may be quaternary ammonium salt that has side groups that increase the solubility of the quaternary ammonium salt in carbon dioxide.
摘要翻译：配制成包括至少一种超临界流体或液体溶剂和碱的基本显影剂/猝灭剂溶液可用于淬灭光致抗蚀剂内的光生酸，以及显影光致抗蚀剂。超临界流体或液体溶剂可以是二氧化碳，碱可以是具有增加季铵盐在二氧化碳中的溶解度的侧基的季铵盐。

2. 发明申请

US20050221218A1 Novel anti-reflective coatings 有权
标题翻译：新型抗反射涂层
公开(公告)号：US20050221218A1
公开(公告)日：2005-10-06
申请号：US10815528
申请日：2004-03-31
申请人： Shan Clark , Ernisse Putna , Robert Meagley
发明人： Shan Clark , Ernisse Putna , Robert Meagley
IPC分类号： G03C1/492 , G03F7/09 , G03F7/40
CPC分类号： G03F7/091 , G03F7/40
摘要： Anti-reflective materials such as bottom anti-reflective coatings (BARC's) and sacrificial light absorbing materials (SLAM) may be made more effective at preventing coherent light or electron beam reflection from a substrate by including in the anti-reflective material an additive to alter the radiation beam path of the reflected light or electrons. The radiation beam path altering additive may be a reflective material or a refractive material. The inclusion of such a radiation beam bath altering additive may reduce line width roughness and increase critical dimension (CD) control of interconnect lines and vias.
摘要翻译：防反射材料如底部抗反射涂层（BARC）和牺牲光吸收材料（SLAM）可以更有效地通过在抗反射材料中包含添加剂来改变基底的相干光或电子束反射，从而改变反射光或电子的辐射束路径。辐射束路径改变添加剂可以是反射材料或折射材料。包含这种辐射束浴改变添加剂可以减小线宽粗糙度并增加互连线和通孔的临界尺寸（CD）控制。

3. 发明申请

US20050164502A1 Immersion liquids for immersion lithography 有权
标题翻译：用于浸没式光刻的浸液
公开(公告)号：US20050164502A1
公开(公告)日：2005-07-28
申请号：US10763467
申请日：2004-01-22
申请人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert Meagley , Ernisse Putna
发明人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert Meagley , Ernisse Putna
IPC分类号： G03F7/20 , H01L21/302 , H01L21/461
CPC分类号： G03F7/2041 , G03F7/70341
摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.
摘要翻译：用于浸没液体材料和相关浸没光刻系统和技术的组合物。与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

4. 发明申请

US20050084794A1 Methods and compositions for providing photoresist with improved properties for contacting liquids 失效
标题翻译：用于提供具有改进的液体接触性能的光刻胶的方法和组合物
公开(公告)号：US20050084794A1
公开(公告)日：2005-04-21
申请号：US10688109
申请日：2003-10-16
申请人： Robert Meagley , Ernisse Putna , Wang Yueh
发明人： Robert Meagley , Ernisse Putna , Wang Yueh
IPC分类号： G03C1/76 , G03F7/039 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/0392
摘要： Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.
摘要翻译：本发明的实施方案提供了提供具有改进的液体接触性能的光致抗蚀剂的方法和组合物。对于本发明的一个实施例，提供具有一个或多个阻挡光致抗蚀剂和折射率匹配液体（IML）之间的扩散的组成成分的光致抗蚀剂。对于其中IML为水的这种实施方案，提供了疏水性的光致抗蚀剂组分，从而减少光致抗蚀剂和水之间的扩散。在本发明的各种替代实施例中，提供具有一种或多种构成组分的光致抗蚀剂，其以促使光致抗蚀剂层有益的液体接触性质的方式促进光致抗蚀剂层和IML之间的扩散。对于其中IML为水的这种实施方案，提供具有一种或多种亲水组分的光致抗蚀剂。

5. 发明申请

US20050058933A1 Quantum efficient photoacid generators for photolithographic processes 审中-公开
标题翻译：用于光刻工艺的量子效率光酸发生器
公开(公告)号：US20050058933A1
公开(公告)日：2005-03-17
申请号：US10666019
申请日：2003-09-17
申请人： Robert Meagley , Ernisse Putna
发明人： Robert Meagley , Ernisse Putna
IPC分类号： G03C1/76 , G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392
摘要： A photoacid generator with sigma-bonded cations may be utilized with certain photolithographic processes to provide desirable absorbance and high quantum efficiency.
摘要翻译：具有σ-键合阳离子的光致酸发生器可以用某些光刻方法使用，以提供所需的吸光度和高量子效率。

6. 发明申请

US20060003271A1 Basic supercritical solutions for quenching and developing photoresists 审中-公开
标题翻译：用于淬火和发展光刻胶的基本超临界解决方案
公开(公告)号：US20060003271A1
公开(公告)日：2006-01-05
申请号：US10883457
申请日：2004-06-30
申请人： Shan Clark , Kim-Khanh Ho , James Clarke , Ernisse Putna , Wang Yueh
发明人： Shan Clark , Kim-Khanh Ho , James Clarke , Ernisse Putna , Wang Yueh
IPC分类号： G03F7/30
CPC分类号： G03F7/327
摘要： A basic supercritical solution formulated to include at least one supercritical fluid and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The base may be the supercritical fluid in the basic supercritical solution. A super critical fluid is a state of matter above the critical temperature and pressure (Tc and Pc). A basic supercritical solution formulated to include at least one supercritical fluid has a low viscosity and surface tension and is capable of penetrating narrow features having high aspect ratios and the photoresist material due to the gas-like nature of the supercritical fluid.
摘要翻译：配制成包含至少一种超临界流体和碱的基本超临界溶液可用于淬灭光致抗蚀剂内的光生酸，以及显影光致抗蚀剂。碱可以是基本超临界溶液中的超临界流体。超临界流体是高于临界温度和压力（T T c C和C C）的物质状态。配制成包含至少一种超临界流体的基本超临界溶液具有低粘度和表面张力，并且由于超临界流体的气体性质，能够穿透具有高纵横比的窄特征和光致抗蚀剂材料。

7. 发明申请

US20060029879A1 Silicon based optically degraded arc for lithographic patterning 失效
公开(公告)号：US20060029879A1
公开(公告)日：2006-02-09
申请号：US10914605
申请日：2004-08-09
申请人： Kyle Flanigan , Juan Dominguez , Sergei Koveshnikov , Ernisse Putna
发明人： Kyle Flanigan , Juan Dominguez , Sergei Koveshnikov , Ernisse Putna
IPC分类号： G03C5/18
CPC分类号： H01L21/76808
摘要： An optically tuned SLAM (Sacrificial Light-Absorbing Material) may be used in a via-first dual damascene patterning process to facilitate removal of the SLAM. The monomers used to produce the optically tuned SLAM may be modified to place an optically sensitive structure in the backbone of the SLAM polymer. The wafer may be exposed to a wavelength to which the SLAM is tuned prior to etching and/or ashing steps to degrade the optically tuned SLAM and facilitate removal.

8. 发明申请

US20050158654A1 Reducing outgassing of reactive material upon exposure of photolithography resists 审中-公开
标题翻译：在曝光光刻抗蚀剂时减少反应性材料的除气
公开(公告)号：US20050158654A1
公开(公告)日：2005-07-21
申请号：US10761842
申请日：2004-01-21
申请人： Wang Yueh , Ernisse Putna
发明人： Wang Yueh , Ernisse Putna
IPC分类号： G03C1/492 , G03F7/004
CPC分类号： G03F7/0045
摘要： Outgassing of reactive material upon exposure of a photolithographic resist may be reduced. Outgassing may foul optical components of the photolithographic system. In one embodiment, a ring compound with iodine or sulfur may be formed. The ring compound may be more resistant to the generation of reactive outgassing components.
摘要翻译：曝光光刻抗蚀剂时反应性材料的除气可能降低。除气可能会污染光刻系统的光学部件。在一个实施方案中，可以形成具有碘或硫的环化合物。环化合物可能更能抵抗反应性除气组分的产生。

9. 发明授权

US07687225B2 Optical coatings 失效
标题翻译：光学涂料
公开(公告)号：US07687225B2
公开(公告)日：2010-03-30
申请号：US10955601
申请日：2004-09-29
申请人： Sergei V. Koveshnikov , Juan E. Dominguez , Kyle Y. Flanigan , Ernisse Putna
发明人： Sergei V. Koveshnikov , Juan E. Dominguez , Kyle Y. Flanigan , Ernisse Putna
IPC分类号： G03F1/00 , B44C1/22
CPC分类号： G03F7/091 , Y10S438/95 , Y10S438/964
摘要： Systems and techniques involving optical coatings for semiconductor devices. An implementation includes a substantially isotropic, heterogeneous anti-reflective coating having a substantially equal thickness normal to any portion of a substrate independent of the orientation of the portion.
摘要翻译：涉及半导体器件光学涂层的系统和技术。实施方案包括基本上各向同性的多相抗反射涂层，其具有与基底的取向无关的垂直于基底的任何部分的基本相等的厚度。

10. 发明授权

US07391501B2 Immersion liquids with siloxane polymer for immersion lithography 有权
标题翻译：浸渍液与硅氧烷聚合物浸渍光刻
公开(公告)号：US07391501B2
公开(公告)日：2008-06-24
申请号：US10763467
申请日：2004-01-22
申请人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert M. Meagley , Ernisse Putna
发明人： Hai Deng , Yueh Wang , Huey-Chiang Liou , Hok-Kin Choi , Robert M. Meagley , Ernisse Putna
IPC分类号： G03B27/54
CPC分类号： G03F7/2041 , G03F7/70341
摘要： Compositions for immersion liquid materials and associated immersion lithography systems and techniques. Examples of polymer or oligomer-based immersion liquids are described to exhibit superior material properties for immersion lithography in comparison with water and some other commonly-used immersion liquids. In addition, certain material additives may be added to water and water-based immersion liquids to improve the performance of the immersion liquids in immersion lithography.
摘要翻译：用于浸没液体材料和相关浸没光刻系统和技术的组合物。与水和一些其它常用的浸液相比，基于聚合物或低聚物的浸渍液体的实例被描述为具有优异的浸渍光刻材料性能。此外，某些材料添加剂可以添加到水和水基浸液中以改善浸没式光刻中的浸液的性能。

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