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    • 4. 发明授权
    • Methods and compositions for reducing line wide roughness
    • 减少线宽粗糙度的方法和组合物
    • US07867687B2
    • 2011-01-11
    • US10687288
    • 2003-10-15
    • Wang YuehHuey-Chiang LiouHai DengHok-Kin Choi
    • Wang YuehHuey-Chiang LiouHai DengHok-Kin Choi
    • G03F7/004
    • G03F7/022G03F7/023G03F7/0233
    • Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.
    • 本发明的实施例提供非化学放大的光致抗蚀剂,其导致线宽粗糙度(LWR)的降低。 根据一个实施方案,光致抗蚀剂包括显影剂可溶性树脂(DSR)和光敏化合物(PAC)。 对于本发明的一个实施例,PAC在DSR内的均匀分布导致酸扩散减少,从而减少LWR。 在暴露于光源之前,PAC抑制DSR在显影剂中的溶解度。 曝光后,PAC转化为酸,以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例,以EUV技术(例如,波长为13.4nm)施加光致抗蚀剂。 对于这样的实施例,LWR可以减小到小于1.5nm,允许有效地制造具有大约15nm的特征尺寸的器件。
    • 5. 发明申请
    • Methods and compositions for reducing line wide roughness
    • 减少线宽粗糙度的方法和组合物
    • US20050084793A1
    • 2005-04-21
    • US10687288
    • 2003-10-15
    • Wang YuehHuey-Chiang LiouHai DengHok-Kin Choi
    • Wang YuehHuey-Chiang LiouHai DengHok-Kin Choi
    • G03F7/00G03F7/004G03F7/022G03F7/023
    • G03F7/022G03F7/023G03F7/0233
    • Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.
    • 本发明的实施例提供非化学放大的光致抗蚀剂,其导致线宽粗糙度(LWR)的降低。 根据一个实施方案,光致抗蚀剂包括显影剂可溶性树脂(DSR)和光敏化合物(PAC)。 对于本发明的一个实施例,PAC在DSR内的均匀分布导致酸扩散减少,从而减少LWR。 在暴露于光源之前,PAC抑制DSR在显影剂中的溶解度。 曝光后,PAC转化为酸,以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例,以EUV技术(例如,波长为13.4nm)施加光致抗蚀剂。 对于这样的实施例,LWR可以减小到小于1.5nm,允许有效地制造具有大约15nm的特征尺寸的器件。