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1. 发明授权

US09447499B2 Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery 有权
标题翻译：双重气室，轴对称淋浴喷头，具有边缘到中心的气体输送
公开(公告)号：US09447499B2
公开(公告)日：2016-09-20
申请号：US13531254
申请日：2012-06-22
申请人： Shambhu N. Roy , Vincent E. Burkhart , Natan Solomon , Sanjay Gopinath , Kaihan Abidi Ashtiani , Bart van Schravendijk , Jason Stevens , Dhritiman Subha Kashyap , David Cohen
发明人： Shambhu N. Roy , Vincent E. Burkhart , Natan Solomon , Sanjay Gopinath , Kaihan Abidi Ashtiani , Bart van Schravendijk , Jason Stevens , Dhritiman Subha Kashyap , David Cohen
IPC分类号： B05B1/14 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/45574
摘要： A dual-plenum showerhead for semiconductor processing operations is provided. The showerhead may include a faceplate with two sets of gas distribution holes, each set fed by a separate plenum. One set of gas distribution holes may be through-holes in the faceplate of the showerhead and may allow gases trapped between the faceplate and a plasma dome to flow towards a wafer. The other set of gas distribution holes may distribute gas routed through passages or channels in the faceplate towards the wafer. The passages or channels in the faceplate may include radial channels and annular channels and may be fed from an annular gas distribution channel about the periphery of the faceplate.
摘要翻译：提供了一种用于半导体加工操作的双通风淋浴喷头。淋浴头可以包括具有两组气体分配孔的面板，每组由单独的增压室供给。一组气体分配孔可以是喷头的面板中的通孔，并且可以允许被截留在面板和等离子体圆顶之间的气体流向晶片。另一组气体分配孔可以将通过面板中的通道或通道的气体分配到晶片。面板中的通道或通道可以包括径向通道和环形通道，并且可以从围绕面板周边的环形气体分配通道供给。

2. 发明申请

US20130341433A1 DUAL PLENUM, AXI-SYMMETRIC SHOWERHEAD WITH EDGE-TO-CENTER GAS DELIVERY 有权
标题翻译：双层气体，AXI-SYMMETRIC SHOWERHEAD具有边缘到中心气体输送
公开(公告)号：US20130341433A1
公开(公告)日：2013-12-26
申请号：US13531254
申请日：2012-06-22
申请人： Shambhu N. Roy , Vincent E. Burkhart , Natan Solomon , Sanjay Gopinath , Kaihan Abidi Ashtiani , Bart van Schravendijk , Jason Stevens , Dhritiman Subha Kashyap , David Cohen
发明人： Shambhu N. Roy , Vincent E. Burkhart , Natan Solomon , Sanjay Gopinath , Kaihan Abidi Ashtiani , Bart van Schravendijk , Jason Stevens , Dhritiman Subha Kashyap , David Cohen
IPC分类号： B05B1/14
CPC分类号： C23C16/45565 , C23C16/45574
摘要： A dual-plenum showerhead for semiconductor processing operations is provided. The showerhead may include a faceplate with two sets of gas distribution holes, each set fed by a separate plenum. One set of gas distribution holes may be through-holes in a faceplate of the showerhead and may allow gases trapped between the faceplate and a plasma dome to flow towards a wafer. The other set of gas distribution holes may distribute gas routed through passages or channels in the faceplate towards the wafer. The passages or channels in the faceplate may include radial channels and annular channels and may be fed from an annular gas distribution channel about the periphery of the faceplate.
摘要翻译：提供了一种用于半导体加工操作的双通风淋浴喷头。淋浴头可以包括具有两组气体分配孔的面板，每组由单独的增压室供给。一组气体分配孔可以是喷头的面板中的通孔，并且可允许捕获在面板和等离子体圆顶之间的气体朝向晶片流动。另一组气体分配孔可以将通过面板中的通道或通道的气体分配到晶片。面板中的通道或通道可以包括径向通道和环形通道，并且可以从围绕面板周边的环形气体分配通道供给。

3. 发明授权

US6083363A Apparatus and method for uniform, low-damage anisotropic plasma processing 失效
标题翻译：均匀，低损伤各向异性等离子体处理的装置和方法
公开(公告)号：US6083363A
公开(公告)日：2000-07-04
申请号：US887140
申请日：1997-07-02
申请人： Kaihan Abidi Ashtiani , James Anthony Seirmarco
发明人： Kaihan Abidi Ashtiani , James Anthony Seirmarco
IPC分类号： H01J37/305 , H01J37/32 , H01L21/205 , H01L21/302 , C23C14/34
CPC分类号： H01J37/321 , H01J37/32357
摘要： An apparatus and method for processing the surface of a substrate with a plasma formed from a process gas comprises a processing chamber defining a plasma source region and a processing region wherein electrical energy is coupled into the source region to form and sustain a plasma therein, and an ion extraction mechanism positioned between the source region and processing region for extracting ions from the plasma and directing extracted ions and neutral particles into the processing region to process a biased substrate therein. A gas-dispersing element in the processing space disperses a process gas to intersect paths of the extracted ions and to produce charge exchange collisions to create a large number of high-energy neutral particles for processing the workpiece. A radiation-blocking apparatus is positioned between the plasma source region and processing region proximate the ion extraction mechanism and is operable for absorbing damaging radiation produced by the plasma to reduce radiation damage to the substrate.
摘要翻译：用由处理气体形成的等离子体处理衬底表面的设备和方法包括限定等离子体源区域的处理室和其中电能耦合到源区域中以在其中形成和维持等离子体的处理区域，以及位于源区域和处理区域之间的离子提取机构，用于从等离子体中提取离子，并将提取的离子和中性粒子引导到处理区域中以在其中处理偏置的衬底。处理空间中的气体分散元件分散处理气体以与所提取离子的路径相交，并产生电荷交换碰撞以产生大量用于处理工件的高能中性粒子。放射线阻挡装置位于等离子体源区域和靠近离子提取机构的处理区域之间，并且可操作用于吸收由等离子体产生的损伤辐射以减少对衬底的辐射损伤。

4. 发明授权

US06193854B1 Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source 有权
标题翻译：用于控制中空阴极磁控溅射源中的侵蚀曲线的装置和方法
公开(公告)号：US06193854B1
公开(公告)日：2001-02-27
申请号：US09375667
申请日：1999-08-16
申请人： Kwok Fai Lai , Larry Dowd Hartsough , Andrew L. Nordquist , Kaihan Abidi Ashtiani , Karl B. Levy , Maximilian A. Biberger
发明人： Kwok Fai Lai , Larry Dowd Hartsough , Andrew L. Nordquist , Kaihan Abidi Ashtiani , Karl B. Levy , Maximilian A. Biberger
IPC分类号： C23C1435
CPC分类号： H01J37/342 , C23C14/35 , H01J37/3405
摘要： A hollow cathode magnetron (HCM) sputter source includes a main magnet positioned near the sidewall of the hollow cathode target and a pair of rotating magnet arrays that are positioned near the closed end of the hollow cathode target. One of the arrays produces a magnetic field that is aligned with (aids) the magnetic field produced by the main magnet; the other arrays produce a magnetic field that is aligned against (bucks) the magnetic field produced by the main magnet. Field lines produced by the magnet arrays contain an extension of the plasma that is controlled by the main magnet. Charged particles circulate between the two portions of the plasma. The extended plasma is thus formed over a very high percentage of the surface of the target, thereby creating an erosion profile that is highly uniform and encompasses essentially the entire face of the target. This maximizes the utilization of the target and minimizes the frequency at which the spent target must be replaced.
摘要翻译：中空阴极磁控管（HCM）溅射源包括位于中空阴极靶的侧壁附近的主磁体和位于中空阴极靶的封闭端附近的一对旋转磁体阵列。其中一个阵列产生与由主磁体产生的磁场（辅助）对准的磁场; 其他阵列产生与主磁体产生的磁场对准（降压）的磁场。由磁体阵列产生的场线包含由主磁体控制的等离子体的延伸。带电粒子在等离子体的两部分之间循环。延长的等离子体因此形成在目标表面的非常高百分比上，从而产生高度均匀并且基本上涵盖靶的整个面的侵蚀曲线。这最大限度地提高了目标的利用率，并最大限度地减少了必须更换用完的目标的频率。

5. 发明授权

US5669975A Plasma producing method and apparatus including an inductively-coupled plasma source 失效
标题翻译：等离子体制造方法和装置，其包括电感耦合等离子体源
公开(公告)号：US5669975A
公开(公告)日：1997-09-23
申请号：US624010
申请日：1996-03-27
申请人： Kaihan Abidi Ashtiani
发明人： Kaihan Abidi Ashtiani
IPC分类号： H05H1/46 , C23C16/00 , C23C16/50 , C23C16/505 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/31 , H05H1/24
CPC分类号： C23C16/507 , H01J37/321 , H01J37/32688
摘要： An apparatus for processing at least a surface of an article with a uniform plasma includes a processing chamber in which the article is disposed and a plasma source. The plasma source includes a dielectric plate having a first surface forming part of an inner wall of the processing chamber, and an electrical energy source, including a radiofrequency source and a substantially planar induction coil, the latter of which is disposed on a second surface of the dielectric plate, and to which energy from the radiofrequency source is preferably supplied through impedance matching circuitry. The substantially planar induction coil has at least two spiral portions which are symmetrical about at least one point of the substantially planar induction coil, and preferably forming a continuous "S-shape". The shape of the induction coil minimizes the capacitive coupling between the induction coil and the plasma, and thus the plasma sheath voltage drop, thereby improving device damage processing and plasma uniformity at the surface of the article. An impedance matching circuit connected between the substantially planar induction coil and the radiofrequency source minimizes a net voltage drop which often occurs across the leads of a prior art induction coil and thus further improves plasma uniformity at the surface of the article.
摘要翻译：用于处理具有均匀等离子体的制品的至少表面的设备包括处理室，其中物品被设置在其中并具有等离子体源。等离子体源包括具有形成处理室的内壁的一部分的第一表面的电介质板和包括射频源和基本平面的感应线圈的电能源，其中后者设置在第二表面电介质板，并且优选地通过阻抗匹配电路提供来自射频源的能量。基本上平面的感应线圈具有至少两个螺旋部分，其围绕基本平面的感应线圈的至少一个点对称，并且优选地形成连续的“S”形。感应线圈的形状使感应线圈和等离子体之间的电容耦合最小化，从而使等离子体护套电压下降，从而提高器件损伤处理和制品表面的等离子体均匀性。连接在基本上平面的感应线圈和射频源之间的阻抗匹配电路最小化了现有技术的感应线圈两端经常发生的净电压降，从而进一步改善了制品表面的等离子体均匀性。

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