专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07154221B2 Plasma display panel including sustain electrodes having double gap and method of manufacturing the panel 失效
标题翻译：等离子体显示面板包括具有双重间隙的维持电极和制造面板的方法
公开(公告)号：US07154221B2
公开(公告)日：2006-12-26
申请号：US10747120
申请日：2003-12-30
申请人： Seung-hyun Son , Young-mo Kim , Hidekazu Hatanaka , Vassili Leniachine , Nikolai Shpackovsky , Sang-hun Jang , Mi-jeong Song , Hyo-june Kim , Gi-young Kim , Hyoung-bin Park
发明人： Seung-hyun Son , Young-mo Kim , Hidekazu Hatanaka , Vassili Leniachine , Nikolai Shpackovsky , Sang-hun Jang , Mi-jeong Song , Hyo-june Kim , Gi-young Kim , Hyoung-bin Park
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J11/24 , H01J2211/245 , H01J2211/28 , H01J2211/38
摘要： A plasma display panel (PDP) and a method of manufacturing the panel includes sustain electrodes having a double gap structure and a predetermined resistance value. Each of the sustain electrodes includes a main electrode for sustaining a discharge and an auxiliary electrode for starting a low-voltage discharge without decreasing efficiency. A gap between auxiliary electrodes included in different sustain electrodes, respectively, is narrower than a gap between the different sustain electrodes. Each auxiliary electrode is formed between barrier ribs or immediately above a barrier rib. A ditch is formed in a dielectric layer covering the main electrodes and the auxiliary electrodes. The ditch is formed immediately above an auxiliary electrode.
摘要翻译：等离子体显示面板（PDP）和制造面板的方法包括具有双间隙结构和预定电阻值的维持电极。每个维持电极包括用于维持放电的主电极和用于启动低电压放电而不降低效率的辅助电极。包括在不同维持电极中的辅助电极之间的间隙分别比不同维持电极之间的间隙窄。每个辅助电极形成在障壁之间或紧邻障壁上方。在覆盖主电极和辅助电极的电介质层中形成沟。沟槽形成在辅助电极的正上方。

2. 发明授权

US07013657B2 Ice maker 失效
标题翻译：制冰器
公开(公告)号：US07013657B2
公开(公告)日：2006-03-21
申请号：US10724168
申请日：2003-12-01
申请人： Ji Sick Hwang , Vassili Leniachine , Nikolai Shpakovsky , Gil Hyoung Cho , Hyo June Kim
发明人： Ji Sick Hwang , Vassili Leniachine , Nikolai Shpakovsky , Gil Hyoung Cho , Hyo June Kim
IPC分类号： F25C1/10
CPC分类号： F25C5/187 , F25C1/10 , F25C5/185
摘要： An ice maker is capable of efficiently making and removing ice cubes. The ice maker includes first and second pulleys which are installed to be spaced apart from each other. A drive unit rotates the first and second pulleys. An ice making conveyor is wrapped around the first and second pulleys, and has a plurality of ice making parts which are concavely formed to contain water therein. An ice storage tray is provided under the ice making conveyor to store ice cubes dropping from the ice making parts. An ice level sensing unit functions to sense a level of the ice cubes stored in the ice storage tray, thus shutting off electricity. When the level of the ice cubes stored in the ice storage tray exceeds a predetermined level, an operation of the ice maker is stopped, thus preventing an excessive number of ice cubes from being stored in the ice storage tray.
摘要翻译：制冰机能够有效地制造和移除冰块。制冰机包括彼此间隔开地安装的第一和第二滑轮。驱动单元旋转第一和第二滑轮。制冰输送机缠绕在第一和第二滑轮周围，并且具有多个制冰部件，它们被凹入地形成以在其中容纳水分。在制冰输送机下面设有储冰盘，用于存储从制冰部件落下的冰块。冰水平感测单元用于感测存储在储冰盘中的冰块的水平，从而关闭电力。当存储在储冰托盘中的冰块的高度超过预定水平时，停止制冰机的操作，从而防止过多的冰块储存在储冰托盘中。

3. 发明授权

US07268489B2 Organic light emitting device having metal electrodes in a groove with steps in a substrate 有权
标题翻译：具有金属电极的有机发光器件在具有基板的台阶的槽中
公开(公告)号：US07268489B2
公开(公告)日：2007-09-11
申请号：US11020671
申请日：2004-12-27
申请人： Mu-gyeom Kim , Sang-yeol Kim , Vassili Leniachine , Mi-jeong Song
发明人： Mu-gyeom Kim , Sang-yeol Kim , Vassili Leniachine , Mi-jeong Song
IPC分类号： H05B33/14 , H05B33/00
CPC分类号： H01L51/5271 , H01L51/52 , H01L51/5203 , H01L51/524 , H01L51/5253 , Y10S428/917
摘要： An organic light emitting device includes first and second metal layers used as electrodes on a substrate, an electron transport layer on the first metal layer, a first partition wall insulating the first metal layer from the second metal layer and extending onto the electron transport layer along the first metal layer, a second partition wall on the first metal layer around the electron transport layer, a third partition wall separated from the first partition wall and on the second metal layer, an organic light emitting layer on the electron transport layer, a hole transport layer on the organic light emitting layer and contacting the second metal layer, a protecting layer covering the hole transport layer and extending to the first and second metal layers beyond the second and third partition walls, and sealing materials filling spaces between the protecting layer and the first and second layers.
摘要翻译：有机发光器件包括在基板上用作电极的第一和第二金属层，第一金属层上的电子传输层，第一分隔壁，将第一金属层与第二金属层绝缘并延伸到电子传输层上第一金属层，围绕电子传输层的第一金属层上的第二分隔壁，与第一分隔壁和第二金属层分离的第三分隔壁，电子传输层上的有机发光层，孔在第二金属层和第二金属层之间的接触层，覆盖空穴传输层并延伸到第一和第二金属层超过第二和第三隔壁的保护层，以及密封材料填充保护层和第一层和第二层。

4. 发明申请

US20090289241A1 Phase change memory devices and fabrication methods thereof 有权
公开(公告)号：US20090289241A1
公开(公告)日：2009-11-26
申请号：US12461187
申请日：2009-08-04
申请人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
发明人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1691 , Y10S977/754
摘要： In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.

5. 发明申请

US20060197130A1 Phase change memory devices and fabrication methods thereof 有权
公开(公告)号：US20060197130A1
公开(公告)日：2006-09-07
申请号：US11356245
申请日：2006-02-17
申请人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
发明人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
IPC分类号： H01L29/94
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1691 , Y10S977/754
摘要： In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.

6. 发明授权

US07872908B2 Phase change memory devices and fabrication methods thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07872908B2
公开(公告)日：2011-01-18
申请号：US12461187
申请日：2009-08-04
申请人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
发明人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1691 , Y10S977/754
摘要： In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.
摘要翻译：在存储器件中，可以在衬底上形成晶体管，并且第一电极可以与其电连接。可以在第一电极上垂直形成相变材料膜，并且可以在相变材料膜上形成第二电极。

7. 发明授权

US07482189B2 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07482189B2
公开(公告)日：2009-01-27
申请号：US11896634
申请日：2007-09-04
申请人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
发明人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
IPC分类号： H01L27/25 , H01L29/22
CPC分类号： H01L33/24 , H01L33/0075
摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.
摘要翻译：提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜，到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

8. 发明申请

US20080032436A1 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080032436A1
公开(公告)日：2008-02-07
申请号：US11896634
申请日：2007-09-04
申请人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
发明人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/0075
摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.
摘要翻译：提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜，到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

9. 发明申请

US20070012933A1 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20070012933A1
公开(公告)日：2007-01-18
申请号：US11448832
申请日：2006-06-08
申请人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
发明人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/0075
摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ
摘要翻译：提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜，到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= β）相对于所述基板的上表面; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

10. 发明授权

US07599216B2 Phase change memory devices and fabrication methods thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07599216B2
公开(公告)日：2009-10-06
申请号：US11356245
申请日：2006-02-17
申请人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
发明人： Dong-Seok Suh , Yoon-Ho Khang , Jin-Seo Noh , Vassili Leniachine , Mi-Jeong Song
IPC分类号： G11C11/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1691 , Y10S977/754
摘要： In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.
摘要翻译：在存储器件中，可以在衬底上形成晶体管，并且第一电极可以与其电连接。可以在第一电极上垂直形成相变材料膜，并且可以在相变材料膜上形成第二电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式