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1. 发明授权

US07482189B2 Light emitting diode and method of fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07482189B2
公开(公告)日：2009-01-27
申请号：US11896634
申请日：2007-09-04
申请人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
发明人： Jeong-wook Lee , Vassili Leniachine , Mi-jeong Song , Suk-ho Yoon , Hyun-soo Kim
IPC分类号： H01L27/25 , H01L29/22
CPC分类号： H01L33/24 , H01L33/0075
摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.
摘要翻译：提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜，到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

2. 发明申请

WO2004030612A3 LIGHT EMITTING DIODE, SUPPORT & METHOD OF MANUFACTURE 审中-公开
标题翻译：发光二极管，支持和制造方法
公开(公告)号：WO2004030612A3
公开(公告)日：2005-04-14
申请号：PCT/US0327547
申请日：2003-09-03
申请人： CORNING INC
发明人： DAHMANI BRAHIM , GUZMAN GUILLAUME
IPC分类号： A61K20060101 , H01L31/12 , H01L33/00 , H01L35/24 , H01L51/00 , H01L51/52 , H05B33/02 , H05B33/10 , H01L27/25
CPC分类号： H01L51/5262 , H01L51/5088 , H01L51/5206 , H01L51/5209 , H01L51/5215
摘要： A light emitting diode of the stacked-layer structure type, incorporating at least one layer made of an inorganic material between the layer forming the substrate (10) and a layer forming the light emitting layer (14), is provided, in which a periodic structure at the wavelength range emitted by the light emitting layer is printed. Also described is a method for generating a microstructure periodic with a wavelength range of the emitting layer of a light emitting diode. The method includes: depositing an inorganic material layer by a sol-gel process between the substrate and a light emitting layer, and printing the periodic structure onto the outer surface of this layer by soft lithography, as well as using this process for manufacturing a light emitting diode.
摘要翻译：提供层叠结构型的发光二极管，在形成基板（10）的层与形成发光层（14）的层之间并入至少一层由无机材料制成的层，其中周期性打印由发光层发射的波长范围的结构。还描述了一种用于产生具有发光二极管的发射层的波长范围的微结构周期性的方法。该方法包括：通过溶胶 - 凝胶法在基板和发光层之间沉积无机材料层，并通过软光刻将周期性结构印刷在该层的外表面上，以及使用该方法制造光发光二极管。

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