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    • 6. 发明授权
    • Chip stack package
    • 芯片堆栈封装
    • US08446016B2
    • 2013-05-21
    • US13224670
    • 2011-09-02
    • Sun-Won KangSeung-Duk BaekJong-Joo Lee
    • Sun-Won KangSeung-Duk BaekJong-Joo Lee
    • H01L23/538
    • H01L25/0657H01L2224/05573H01L2224/13025H01L2224/16145H01L2225/06513H01L2225/06541H01L2924/15311
    • A chip stack package includes a plurality of chips that are stacked by using adhesive layers as intermediary media, and a through via electrode formed through the chips to electrically couple the chips. The through via electrode is classified as a power supply through via electrode, a ground through via electrode, or a signal transfer through via electrode. The power supply through via electrode and the ground through via electrode are formed of a first material such as copper, and the signal transfer through via electrode is formed of second material such as polycrystalline silicon doped with impurities. The signal transfer through via electrode may have a diametrically smaller cross section than that of each of the power supply through via electrode and the ground through via electrode regardless of their resistivities.
    • 芯片堆叠包括通过使用粘合剂层作为中间介质堆叠的多个芯片,以及通过芯片形成的通孔电极以电耦合芯片。 通孔电极通过通孔电极,通过通孔电极的接地或通过通孔电极的信号传输分类为电源。 通过通孔电极和通过通孔电极的接地的电源由诸如铜的第一材料形成,并且通过通孔电极的信号传输由掺杂杂质的多晶硅等第二材料形成。 通过通孔电极的信号传输可以具有比通过通孔电极和通过通孔电极的接地的每个电源的直径更小的横截面,而不管其电阻率如何。
    • 7. 发明授权
    • Chip stack package
    • 芯片堆栈封装
    • US08039928B2
    • 2011-10-18
    • US12171035
    • 2008-07-10
    • Sun-Won KangSeung-Duk BaekJong-Joo Lee
    • Sun-Won KangSeung-Duk BaekJong-Joo Lee
    • H01L23/538
    • H01L25/0657H01L2224/05573H01L2224/13025H01L2224/16145H01L2225/06513H01L2225/06541H01L2924/15311
    • A chip stack package includes a plurality of chips that are stacked by using adhesive layers as intermediary media, and a through via electrode formed through the chips to electrically couple the chips. The through via electrode is classified as a power supply through via electrode, a ground through via electrode, or a signal transfer through via electrode. The power supply through via electrode and the ground through via electrode are formed of a first material such as copper, and the signal transfer through via electrode is formed of second material such as polycrystalline silicon doped with impurities. The signal transfer through via electrode may have a diametrically smaller cross section than that of each of the power supply through via electrode and the ground through via electrode regardless of their resistivities.
    • 芯片堆叠包括通过使用粘合剂层作为中间介质堆叠的多个芯片,以及通过芯片形成的通孔电极以电耦合芯片。 通孔电极通过通孔电极,通过通孔电极的接地或通过通孔电极的信号传输分类为电源。 通过通孔电极和通过通孔电极的接地的电源由诸如铜的第一材料形成,并且通过通孔电极的信号传输由掺杂杂质的多晶硅等第二材料形成。 通过通孔电极的信号传输可以具有比通过通孔电极和通过通孔电极的接地的每个电源的直径更小的横截面,而不管其电阻率如何。