会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • 3-FILE INFORMATION SYSTEM MANAGEMENT SYSTEM AND METHOD
    • 3文件信息系统管理系统和方法
    • US20120179729A1
    • 2012-07-12
    • US13299933
    • 2011-11-18
    • Seung LEE
    • Seung LEE
    • G06F17/30G08B29/00G06F15/16
    • H04L67/10G06F9/445G06F17/30194H04L67/06
    • A method and system is provided for editing a file information system of a host device by using a client device connected to the host device via a Near Field Communication (NFC) channel while maintaining the foreground-running application execution screen of the host device. A method for managing a file information system of a host device by using a client device according to the present invention includes establishing a near field communication channel between the client device and the host device; copying the file information system from the host device to the client device; editing, at the client device, the file information system by means of an application selected in the file information system; and updating the file information system stored in the host device with the edited file information system which is transmitted from the client device to the host device.
    • 提供了一种方法和系统,用于通过使用通过近场通信(NFC)信道连接到主机设备的客户端设备来编辑主机设备的文件信息系统,同时保持主机设备的前台运行应用执行屏幕。 通过使用根据本发明的客户端设备来管理主机设备的文件信息系统的方法包括在客户端设备和主机设备之间建立近场通信信道; 将文件信息系统从主机设备复制到客户端设备; 在所述客户端设备处,通过在所述文件信息系统中选择的应用来编辑所述文件信息系统; 以及使用从客户端设备发送到主机设备的编辑文件信息系统更新存储在主机设备中的文件信息系统。
    • 3. 发明申请
    • METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM
    • 通过金属有机化学气相沉积法制备CuInS2薄膜的方法及其制备的CuInS2薄膜及其制备In2S3薄膜的方法
    • US20080012015A1
    • 2008-01-17
    • US11775618
    • 2007-07-10
    • Il SHIMSeung LEEKook SEOJong PARK
    • Il SHIMSeung LEEKook SEOJong PARK
    • H01L29/24H01L21/36
    • H01L31/0322C23C16/305Y02E10/541
    • Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.
    • 公开了通过金属有机化学气相沉积(MOCVD)制造CuInS 2 O 3薄膜的方法。 该方法包括通过MOCVD在衬底上沉积不对称铜前体并通过MOCVD在铜薄膜上沉积含铟 - 硫的前体来制造CuInS 2< 2>薄膜来制造铜薄膜。 该方法即使在真空以及氩(Ar)气氛下也能以恒定组成制造CuInS 2 N 2薄膜。 还公开了通过该方法制造的CuInS 2 O 3薄膜。 还公开了一种用于通过在CuInS 薄膜的方法 > 2 薄膜。 还公开了通过该方法制造的In 2 N 3 S 3薄膜。 In 2< 3< 3> 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3< 3&