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1. 发明申请

US20080012015A1 METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM 失效
标题翻译：通过金属有机化学气相沉积法制备CuInS2薄膜的方法及其制备的CuInS2薄膜及其制备In2S3薄膜的方法
公开(公告)号：US20080012015A1
公开(公告)日：2008-01-17
申请号：US11775618
申请日：2007-07-10
申请人： Il SHIM , Seung LEE , Kook SEO , Jong PARK
发明人： Il SHIM , Seung LEE , Kook SEO , Jong PARK
IPC分类号： H01L29/24 , H01L21/36
CPC分类号： H01L31/0322 , C23C16/305 , Y02E10/541
摘要： Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.
摘要翻译：公开了通过金属有机化学气相沉积（MOCVD）制造CuInS 2 O 3薄膜的方法。该方法包括通过MOCVD在衬底上沉积不对称铜前体并通过MOCVD在铜薄膜上沉积含铟 - 硫的前体来制造CuInS 2＆lt; 2＆gt;薄膜来制造铜薄膜。该方法即使在真空以及氩（Ar）气氛下也能以恒定组成制造CuInS 2 N 2薄膜。还公开了通过该方法制造的CuInS 2 O 3薄膜。还公开了一种用于通过在CuInS 薄膜的方法 > 2 薄膜。还公开了通过该方法制造的In 2 N 3 S 3薄膜。 In 2＆lt; 3＆lt; 3＆gt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆lt; 3＆

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