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    • 3. 发明申请
    • Semiconductor light source with electrically tunable emission wavelength
    • 具有电可调谐发射波长的半导体光源
    • US20060056466A1
    • 2006-03-16
    • US11206505
    • 2005-08-18
    • Gregory BelenkyJohn BrunoMikhail KisinSerge LuryiLeon ShterengasSergey SuchalkinRichard Tober
    • Gregory BelenkyJohn BrunoMikhail KisinSerge LuryiLeon ShterengasSergey SuchalkinRichard Tober
    • H01S3/10
    • H01S5/0622B82Y20/00H01S5/322H01S5/3401H01S5/3402H01S5/3422
    • A semiconductor light source is disclosed comprising a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. Radiative recombination occurs between the electrons and holes, accumulated in the ground states of the triangular potential wells formed in the high- and low-affinity layers of each active region periods. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.
    • 公开了一种半导体光源,其包括基底,下部和上部包层,具有嵌入的有源区的波导区和用于提供波长调谐所需的电压的电触点。 有源区包括夹在电荷累积层之间的单个或多个异质结期。 每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。 电荷累积层中的电荷载流子积累导致电场积聚,并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。 可以通过电注入或光泵浦在有源区域中产生非平衡载流子。 辐射复合发生在电子和空穴之间,累积在每个有效区域周期的高亲和力层和低亲和层中形成的三角势阱的基态中。 可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。