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    • 8. 发明申请
    • Data Transfer Flows for On-Chip Folding
    • 片上折叠数据传输流程
    • US20110149650A1
    • 2011-06-23
    • US12642649
    • 2009-12-18
    • Jianmin HuangChris AvilaLee M. GavensNeil David HutchisonSergey Anatolievich Gorobets
    • Jianmin HuangChris AvilaLee M. GavensNeil David HutchisonSergey Anatolievich Gorobets
    • G11C16/04G11C14/00
    • G11C11/5628G06F12/0246G06F2212/7203G11C7/1042G11C16/10G11C2211/5641G11C2211/5643
    • A memory system and methods of its operation are presented. The memory system includes a volatile buffer memory and a non-volatile memory circuit, where the non-volatile memory circuit has a first section, where data is stored in a binary format, and a second section, where data is stored in a multi-state format. When writing data to the non-volatile memory, the data is received from a host, stored in the buffer memory, transferred from the buffer memory to into read/write registers of the non-volatile memory circuit, and then written from the read/write registers to the first section of the non-volatile memory circuit using a binary write operation. Portions of the data and then subsequently folded from the first section of the non-volatile memory to the second section of the non-volatile memory, where a folding operation includes reading the portions of the data from multiple locations in the first section into the read/write registers and performing a multi-state programming operation of the potions of the data from the read/write registers into a location the second section of the non-volatile memory. The multi-state programming operations include a first phase and a second phase and one or more of the binary write operations are performed between the phases of the multi-state programming operations.
    • 介绍了一种存储系统及其操作方法。 存储器系统包括易失性缓冲存储器和非易失性存储器电路,其中非易失性存储器电路具有数据以二进制格式存储的第一部分,以及第二部分, 状态格式。 当将数据写入非易失性存储器时,将数据从存储在缓冲存储器中的主机接收,从缓冲存储器传送到非易失性存储器电路的读/写寄存器,然后从读/ 使用二进制写操作将寄存器写入非易失性存储器电路的第一部分。 然后将数据的部分随后从非易失性存储器的第一部分折叠到非易失性存储器的第二部分,其中折叠操作包括将第一部分中的多个位置的数据的部分读入读取 /写入寄存器,并且将数据从读/写寄存器执行到多状态编程操作到非易失性存储器的第二部分的位置。 多状态编程操作包括第一阶段和第二阶段,并且在多状态编程操作的阶段之间执行二进制写入操作中的一个或多个。