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1. 发明授权

US08625110B2 Methods of inspecting structures 有权
标题翻译：检查结构的方法
公开(公告)号：US08625110B2
公开(公告)日：2014-01-07
申请号：US12662079
申请日：2010-03-30
申请人： Seouk-Hoon Woo , Jeong-Ho Yeo , Byeong-Ok Cho , Joo-On Park , Chang-Min Park , Won-Sun Kim
发明人： Seouk-Hoon Woo , Jeong-Ho Yeo , Byeong-Ok Cho , Joo-On Park , Chang-Min Park , Won-Sun Kim
IPC分类号： G01B11/28
CPC分类号： G01B11/06 , G01B11/02 , G01B11/24 , G01B2210/56 , G01N21/956 , G01N2021/95615 , G03F7/70625
摘要： A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.
摘要翻译：检查结构的方法。该方法包括根据参考结构的临界尺寸准备参考衍射强度的初步光谱，从设定的临界尺寸范围内的初步光谱获得线性光谱，将光照射到形成在基板上的各个测量结构，测量测量衍射强度由测量结构衍射的光，并且使用线性光谱从测量衍射强度获得测量结构的临界尺寸。

2. 发明申请

US20110007329A1 Methods of inspecting structures 有权
标题翻译：检查结构的方法
公开(公告)号：US20110007329A1
公开(公告)日：2011-01-13
申请号：US12662079
申请日：2010-03-30
申请人： Seouk-Hoon Woo , Jeong-Ho Yeo , Byeong-Ok Cho , Joo-On Park , Chang-Min Park , Won-Sun Kim
发明人： Seouk-Hoon Woo , Jeong-Ho Yeo , Byeong-Ok Cho , Joo-On Park , Chang-Min Park , Won-Sun Kim
IPC分类号： G01B11/06 , G01B11/14
CPC分类号： G01B11/06 , G01B11/02 , G01B11/24 , G01B2210/56 , G01N21/956 , G01N2021/95615 , G03F7/70625
摘要： A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.
摘要翻译：检查结构的方法。该方法包括根据参考结构的临界尺寸准备参考衍射强度的初步光谱，从设定的临界尺寸范围内的初步光谱获得线性光谱，将光照射到形成在基板上的各个测量结构，测量测量衍射强度由测量结构衍射的光，并且使用线性光谱从测量衍射强度获得测量结构的临界尺寸。

3. 发明申请

US20140078480A1 APPARATUS FOR CREATING AN EXTREME ULTRAVIOLET LIGHT, AN EXPOSING APPARATUS INCLUDING THE SAME, AND ELECTRONIC DEVICES MANUFACTURED USING THE EXPOSING APPARATUS 有权
标题翻译：用于制造极端超紫外线灯的装置，包括其的曝光装置以及使用曝光装置制造的电子装置
公开(公告)号：US20140078480A1
公开(公告)日：2014-03-20
申请号：US13940784
申请日：2013-07-12
申请人： Chang-Min Park , Joo-On Park , Jeong-Ho Yeo
发明人： Chang-Min Park , Joo-On Park , Jeong-Ho Yeo
IPC分类号： G03F7/20
CPC分类号： G03F7/2006 , G03F7/20 , G03F7/70025 , G03F7/70916 , H05G2/003 , H05G2/006 , H05G2/008
摘要： An apparatus for creating an EUV light may include a droplet-supplying unit, a laser-irradiating unit, a light-concentrating unit and a guiding unit. The droplet-supplying unit may supply a droplet from which the EUV light may be created. The laser-irradiating unit may irradiate a laser to the droplet supplied from the droplet-supplying unit to create the EUV light. The light-concentrating unit may concentrate the EUV light created by the laser-irradiating unit. The guiding unit may guide the droplet to a position at which the laser may be irradiated. The guiding unit may have at least one gas-spraying hole for spraying a gas to a space between the droplet-supplying unit and the laser irradiation position to form a gas curtain configured to surround the droplet.
摘要翻译：用于产生EUV光的装置可以包括液滴供给单元，激光照射单元，光聚集单元和引导单元。液滴供给单元可以供应可以从其产生EUV光的液滴。激光照射单元可以将激光照射到从液滴供给单元提供的液滴以产生EUV光。光聚集单元可以集中由激光照射单元产生的EUV光。引导单元可以将液滴引导到可以照射激光的位置。引导单元可以具有用于将气体喷射到液滴供应单元和激光照射位置之间的空间的至少一个气体喷射孔，以形成围绕液滴的气幕。

4. 发明申请

US20100230864A1 Nanoimprint Lithography Template and Method of Fabricating Semiconductor Device Using the Same 审中-公开
标题翻译：纳米压印光刻模板及其制造使用其的半导体器件的方法
公开(公告)号：US20100230864A1
公开(公告)日：2010-09-16
申请号：US12719444
申请日：2010-03-08
申请人： Chang-min Park , Doo-Hoon Goo , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Jeong-Hoon Lee
发明人： Chang-min Park , Doo-Hoon Goo , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Jeong-Hoon Lee
IPC分类号： B29C59/16 , B29C59/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Nanoimprint lithography templates and methods of fabricating semiconductor devices using the nanoimprint lithography templates are provided. The nanoimprint lithography template includes a transparent substrate having a first refractive index, a stamp pattern on a surface on the transparent substrate and having inclined sidewalls, and a coating layer formed on the inclined sidewalls of the stamp pattern, the coating layer having a second refractive index higher than the first refractive index.
摘要翻译：提供纳米压印光刻模板和使用纳米压印光刻模板制造半导体器件的方法。纳米压印光刻模板包括具有第一折射率的透明衬底，在透明衬底上的表面上具有倾斜侧壁的印模图案，以及形成在印模图案的倾斜侧壁上的涂层，该涂层具有第二折射指数高于第一折射率。

5. 发明授权

US08599360B2 Reflective reticle chuck, reflective illumination system including the same, method of controlling flatness of reflective reticle using the chuck, and method of manufacturing semiconductor device using the chuck 有权
标题翻译：反射式光罩卡盘，包括该反光罩的反射照明系统，使用卡盘控制反射型掩模版的平面度的方法以及使用该卡盘制造半导体器件的方法
公开(公告)号：US08599360B2
公开(公告)日：2013-12-03
申请号：US12948370
申请日：2010-11-17
申请人： Jin-Seok Heo , Chang-Min Park , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim
发明人： Jin-Seok Heo , Chang-Min Park , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim
IPC分类号： G03B27/62 , G03B27/54 , G03F7/20
CPC分类号： G03F7/707 , G03F7/70708 , G03F7/70783
摘要： Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.
摘要翻译：提供了一种反射型掩模版卡盘，包括卡盘的反射照明系统，使用该卡盘来控制反射型掩模版的平坦度的方法，以及使用卡盘制造半导体器件的方法。反射型掩模板卡盘包括固定部分和可移动部分，其一起为反射型掩模版提供固定表面。移动部分可以改变固定表面相对于固定部分的高度。

6. 发明授权

US08287792B2 Methods of forming fine patterns using a nanoimprint lithography 失效
标题翻译：使用纳米压印光刻形成精细图案的方法
公开(公告)号：US08287792B2
公开(公告)日：2012-10-16
申请号：US12657750
申请日：2010-01-27
申请人： Jeong-Hoon Lee , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Doo-Hoon Goo , Jin-Hong Park , Chang-Min Park
发明人： Jeong-Hoon Lee , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Doo-Hoon Goo , Jin-Hong Park , Chang-Min Park
IPC分类号： B29C59/00
CPC分类号： G03F7/0002 , B29C43/003 , B29C2043/025 , B82Y10/00 , B82Y40/00
摘要： In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.
摘要翻译：在形成精细图案的方法中，在基板上形成光固化涂层。模板的第一表面与光固化涂层接触。模板的第一表面包括具有第一分散度大小的至少两个第一图案，并且模板的第一表面的至少一部分包括光衰减构件。通过模板将光照射到可光固化涂层上，以形成具有第二分散度尺寸的第二图案的固化涂层。从第一图案生成第二图案，第二色散度小于第一色散度。模板与固化涂层分开。可以通过光衰减部件调整在纳米压印光刻工艺中使用的图案的尺寸分散度，使得精细图案可以形成为具有改进的尺寸分散度。

7. 发明申请

US20110183239A1 Photolithography Mask, Blank Photomask, Reflective Photomask, and Methods of Manufacturing the Same 审中-公开
标题翻译：光刻掩模，空白光掩模，反射光掩模及其制造方法
公开(公告)号：US20110183239A1
公开(公告)日：2011-07-28
申请号：US12963064
申请日：2010-12-08
申请人： Chang-Min Park , Joo-On Park , Jeong-Ho Yeo
发明人： Chang-Min Park , Joo-On Park , Jeong-Ho Yeo
IPC分类号： G03F1/00
CPC分类号： G03F1/38 , G03F1/22
摘要： Photolithography masks include an optically transparent substrate having a plurality of fiducial position aligning marks on sidewalls thereof. A reflective layer is also provided on an upper surface of the optically transparent substrate. The reflective layer includes a composite of a lower reflective layer of a first material and an upper reflective layer of a second material different from the first material, on the lower reflective layer. The lower reflective layer may include molybdenum and the upper reflective layer may include silicon. An anti-reflective layer is provided on the reflective layer.
摘要翻译：光刻掩模包括在其侧壁上具有多个基准位置对准标记的光学透明基板。反射层也设置在光学透明基板的上表面上。反射层包括在下反射层上的第一材料的下反射层和不同于第一材料的第二材料的上反射层的复合材料。下反射层可以包括钼，并且上反射层可以包括硅。反射层设置在反射层上。

8. 发明申请

US20100190340A1 Methods of forming fine patterns using a nanoimprint lithography 失效
标题翻译：使用纳米压印光刻形成精细图案的方法
公开(公告)号：US20100190340A1
公开(公告)日：2010-07-29
申请号：US12657750
申请日：2010-01-27
申请人： Jeong-Hoon Lee , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Doo-Hoon Goo , Jin-Hong Park , Chang-Min Park
发明人： Jeong-Hoon Lee , Jeong-Ho Yeo , Joo-On Park , In-Sung Kim , Doo-Hoon Goo , Jin-Hong Park , Chang-Min Park
IPC分类号： H01L21/306 , B29C43/00 , C23F1/00
CPC分类号： G03F7/0002 , B29C43/003 , B29C2043/025 , B82Y10/00 , B82Y40/00
摘要： In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.
摘要翻译：在形成精细图案的方法中，在基板上形成光固化涂层。模板的第一表面与光固化涂层接触。模板的第一表面包括具有第一分散度大小的至少两个第一图案，并且模板的第一表面的至少一部分包括光衰减构件。通过模板将光照射到可光固化涂层上，以形成具有第二分散度尺寸的第二图案的固化涂层。从第一图案生成第二图案，第二色散度小于第一色散度。模板与固化涂层分开。可以通过光衰减部件调整在纳米压印光刻工艺中使用的图案的尺寸分散度，使得精细图案可以形成为具有改进的尺寸分散度。

9. 发明申请

US20120257185A1 APPARATUS FOR MANUFACTURING A MASK 有权
标题翻译：制造面罩的装置
公开(公告)号：US20120257185A1
公开(公告)日：2012-10-11
申请号：US13440112
申请日：2012-04-05
申请人： Jin-Seok HEO , Chang-Min Park , Seok-Hwan Oh , Jeong-Ho Yeo
发明人： Jin-Seok HEO , Chang-Min Park , Seok-Hwan Oh , Jeong-Ho Yeo
IPC分类号： G03B27/58
CPC分类号： G03F7/0002 , B29C35/0805 , B29C2035/0827 , B29L2031/737 , B82Y10/00 , B82Y40/00
摘要： A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.
摘要翻译：制造掩模的方法包括将具有设计图案的模板的上表面划分为多个区域，模板布置在掩模基板上的聚合物层上，校正区域之间的变形区域，将聚合物层与该模板形成对应于聚合物层上的设计图案的掩模图案; 并固化掩模图案。

10. 发明授权

US09256124B2 Apparatus for manufacturing a mask 有权
标题翻译：用于制造面罩的装置
公开(公告)号：US09256124B2
公开(公告)日：2016-02-09
申请号：US13440112
申请日：2012-04-05
申请人： Jin-Seok Heo , Chang-Min Park , Seok-Hwan Oh , Jeong-Ho Yeo
发明人： Jin-Seok Heo , Chang-Min Park , Seok-Hwan Oh , Jeong-Ho Yeo
IPC分类号： B29C43/02 , G03F7/00 , B82Y10/00 , B82Y40/00
CPC分类号： G03F7/0002 , B29C35/0805 , B29C2035/0827 , B29L2031/737 , B82Y10/00 , B82Y40/00
摘要： A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.
摘要翻译：制造掩模的方法包括将具有设计图案的模板的上表面划分为多个区域，模板布置在掩模基板上的聚合物层上，校正区域之间的变形区域，将聚合物层与该模板形成对应于聚合物层上的设计图案的掩模图案; 并固化掩模图案。

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