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    • 1. 发明申请
    • ORGANIC/INORGANIC THIN FILM DEPOSITION DEVICE AND DEPOSITION METHOD
    • US20080138517A1
    • 2008-06-12
    • US11950606
    • 2007-12-05
    • Seong Deok AHNSeung Youl KANGChul Am KIMJi Young OHIn Kyu YOUGi Heon KIMKyu Ha BAEKKyung Soo SUH
    • Seong Deok AHNSeung Youl KANGChul Am KIMJi Young OHIn Kyu YOUGi Heon KIMKyu Ha BAEKKyung Soo SUH
    • C23C16/455
    • C23C16/45523B05D1/60C23C16/4408
    • Provided are a device for depositing an organic/inorganic thin film and a deposition method thereof. The method includes: i) heating a source vessel containing an organic material and an inorganic material to generate at least one deposition gas phase of the organic and inorganic materials; ii) transferring one of the deposition gas phases of the organic and inorganic materials to a process chamber through a transfer path maintaining a constant temperature so as to prevent the generated deposition gas phases of the organic/inorganic materials from being condensed; iii) distributing one of the deposition gas phases of the organic and inorganic materials transferred to the process chamber onto a substrate disposed in the process chamber to adsorb one of the organic and inorganic materials on the substrate; iv) purging the process chamber using a diluted gas and a transfer gas after one of the organic and inorganic materials is adsorbed on the substrate; v) heating an activating agent source vessel containing an activation heat initiator capable of activating a monomer of one of the deposition gas phases of the organic and inorganic materials to generate a heat initiator gas phase; vi) transferring the heat initiator gas phase to the process chamber through a transfer path maintaining a constant temperature so as to prevent the heat initiator gas phase from being condensed; vii) distributing the heat initiator gas phase transferred to the process chamber onto the organic or inorganic material monomer deposited on the substrate through the process chamber maintaining a constant temperature so as to prevent the heat initiator gas phase from being condensed in a shower head, and forming an organic/inorganic thin film; and viii) exhausting the heat initiator gas phase remaining after the organic/inorganic thin film is deposited on the substrate from the process chamber, and purging the process chamber using the diluted gas and the transfer gas. Therefore, according to the method of depositing the organic/inorganic thin film in a time-division manner, the thickness of the thin film can be accurately adjusted and the deposition can be uniformly performed when the thin film is deposited on a large-scale substrate.
    • 10. 发明申请
    • ORGANIC INVERTER INCLUDING SURFACE-TREATED LAYER AND METHOD OF MANUFACTURING THE SAME
    • 包括表面处理层的有机逆变器及其制造方法
    • US20080135947A1
    • 2008-06-12
    • US11931461
    • 2007-10-31
    • Jae Bon KOOKyung Soo SUHSeong Hyun KIM
    • Jae Bon KOOKyung Soo SUHSeong Hyun KIM
    • H01L51/10H01L51/40
    • H01L27/283H01L51/0545
    • An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.
    • 提供一种有机逆变器及其制造方法,其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管,衬底的表面被选择性地处理,或通过自组装单层处理选择性地施加。 因此,与使用晶体管尺寸效应的传统方法相比,更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外,即使以相同的W / L比率也能够实现D逆变器,从而提高集成密度。 也就是说,不需要增加W / L比来制造耗尽负载晶体管,从而提高集成密度。