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1. 发明授权

US06300184B1 Method of manufacturing a CMOS transistor 失效
标题翻译：制造CMOS晶体管的方法
公开(公告)号：US06300184B1
公开(公告)日：2001-10-09
申请号：US09609158
申请日：2000-06-30
申请人： Jun Gi Choi , Seon Soon Kim
发明人： Jun Gi Choi , Seon Soon Kim
IPC分类号： H01L218238
CPC分类号： H01L21/823842
摘要： There is disclosed a method of manufacturing a CMOS transistor, by which ion implantation process is selectively performed to the gate formed region of a polysilicon film after a NMOS transistor region and a PMOS transistor region are defined in the process of manufacturing a CMOS transistor. Thus, it can obtain a reliable device by solving the problem occurring when polysilicon films doped with different impurities are simultaneously etched and the problem that a tungsten film is oxidized due to a selective oxidization process after forming a tungsten gate electrode.
摘要翻译：公开了一种制造CMOS晶体管的方法，在制造CMOS晶体管的过程中限定了NMOS晶体管区域和PMOS晶体管区域之后，通过其选择性地对多晶硅膜的栅极形成区域进行离子注入工艺。因此，通过解决在同时蚀刻掺杂有不同杂质的多晶硅膜和在形成钨栅电极之后由于选择性氧化工艺而氧化钨膜的问题，可以获得可靠的器件。

2. 发明授权

US06333249B2 Method for fabricating a semiconductor device 失效
公开(公告)号：US06333249B2
公开(公告)日：2001-12-25
申请号：US09751941
申请日：2001-01-02
申请人： Seon Soon Kim , Jun Gi Choi
发明人： Seon Soon Kim , Jun Gi Choi
IPC分类号： H01L213205
CPC分类号： H01L27/10894 , H01L21/823842 , H01L27/10873
摘要： A method for fabricating a semiconductor device is disclosed. In a process for fabricating a CMOS transistor of a high integrated semiconductor device and a cell of a DRAM, a process for forming a dual gate electrode having a layered structure of a tungsten layer and a polysilicon layer includes the steps of forming a gate electrode shape from an undoped polysilicon layer, forming an insulating film spacer at sidewalls of the polysilicon layer, forming an LDD region, removing a portion of the undoped polysilicon layer to leave a predetermined thickness and to form an opening in which the tungsten layer will be formed, and respectively implanting different impurity ions into the undoped polysilicon layer respectively formed in the PMOS region and the NMOS region before forming the tungsten layer. Thus, it is possible to prevent etching residue from occurring and also prevent the semiconductor substrate from being damaged. In addition, it is possible to prevent the tungsten layer from being oxidized due to a high temperature process such as an ion plantation process for forming the LDD region and the source/drain region, thereby improving operational characteristics of the device and process yield.

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