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1. 发明授权

US07042698B2 MEMS tunable capacitor with a wide tuning range and method of fabricating the same 有权
标题翻译：具有宽调谐范围的MEMS可调电容器及其制造方法
公开(公告)号：US07042698B2
公开(公告)日：2006-05-09
申请号：US11047762
申请日：2005-02-02
申请人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
发明人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
IPC分类号： H01G5/00
CPC分类号： H01G5/0136 , H01G5/14 , H01G5/145 , H01G5/18
摘要： A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.
摘要翻译： MEMS可调谐电容器及其制造方法包括在基板上的多个固定的充电板，多个具有相同高度的固定充电板被布置成梳齿形并彼此电连接，覆盖所述多个固定充电板的电容器电介质层，与所述电容器介电层间隔开并且布置在所述多个固定的充电板上的可移动的充电板结构，其中所述可移动的充电板结构包括多个相应地布置的可移动的充电板多个固定的充电板和连接到可移动的充电板结构的致动器，其允许可移动的充电板结构在水平方向上移动。

2. 发明授权

US07394641B2 MEMS tunable capacitor with a wide tuning range 有权
标题翻译：具有宽调谐范围的MEMS可调电容器
公开(公告)号：US07394641B2
公开(公告)日：2008-07-01
申请号：US11444357
申请日：2006-06-01
申请人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
发明人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
IPC分类号： H01G5/00
CPC分类号： H01G5/0136 , H01G5/14 , H01G5/145 , H01G5/18
摘要： A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.
摘要翻译： MEMS可调谐电容器及其制造方法包括在基板上的多个固定的充电板，多个具有相同高度的固定充电板被布置成梳齿形并彼此电连接，覆盖所述多个固定充电板的电容器电介质层，与所述电容器介电层间隔开并且布置在所述多个固定的充电板上的可移动的充电板结构，其中所述可移动的充电板结构包括多个相应地布置的可移动的充电板多个固定的充电板和连接到可移动的充电板结构的致动器，其允许可移动的充电板结构在水平方向上移动。

3. 发明申请

US20060215348A1 MEMS tunable capacitor with a wide tuning range 有权
标题翻译：具有宽调谐范围的MEMS可调电容器
公开(公告)号：US20060215348A1
公开(公告)日：2006-09-28
申请号：US11444357
申请日：2006-06-01
申请人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
发明人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
IPC分类号： H01G5/00
CPC分类号： H01G5/0136 , H01G5/14 , H01G5/145 , H01G5/18
摘要： A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.
摘要翻译： MEMS可调谐电容器及其制造方法包括在基板上的多个固定的充电板，多个具有相同高度的固定充电板被布置成梳齿形并彼此电连接，覆盖所述多个固定充电板的电容器电介质层，与所述电容器介电层间隔开并且布置在所述多个固定的充电板上的可移动的充电板结构，其中所述可移动的充电板结构包括多个相应地布置的可移动的充电板多个固定的充电板和连接到可移动的充电板结构的致动器，其允许可移动的充电板结构在水平方向上移动。

4. 发明申请

US20050168910A1 MEMS tunable capacitor with a wide tuning range and method of fabricating the same 有权
标题翻译：具有宽调谐范围的MEMS可调电容器及其制造方法
公开(公告)号：US20050168910A1
公开(公告)日：2005-08-04
申请号：US11047762
申请日：2005-02-02
申请人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
发明人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
IPC分类号： H01G5/16 , H01G5/013 , H01G5/14 , H01G5/18 , H01G5/00
CPC分类号： H01G5/0136 , H01G5/14 , H01G5/145 , H01G5/18
摘要： A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.
摘要翻译： MEMS可调谐电容器及其制造方法包括在基板上的多个固定的充电板，多个具有相同高度的固定充电板被布置成梳齿形并彼此电连接，覆盖所述多个固定充电板的电容器电介质层，与所述电容器介电层间隔开并且布置在所述多个固定的充电板上的可移动的充电板结构，其中所述可移动的充电板结构包括多个相应地布置的可移动的充电板多个固定的充电板和连接到可移动的充电板结构的致动器，其允许可移动的充电板结构在水平方向上移动。

5. 发明授权

US07203052B2 Method of fabricating MEMS tunable capacitor with wide tuning range 有权
标题翻译：制造具有宽调谐范围的MEMS可调电容器的方法
公开(公告)号：US07203052B2
公开(公告)日：2007-04-10
申请号：US11408976
申请日：2006-04-24
申请人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
发明人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
IPC分类号： H01G7/00
CPC分类号： H01G5/0136 , H01G5/14 , H01G5/145 , H01G5/18
摘要： A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.
摘要翻译： MEMS可调谐电容器及其制造方法包括在基板上的多个固定的充电板，多个具有相同高度的固定充电板被布置成梳齿形并彼此电连接，覆盖所述多个固定充电板的电容器电介质层，与所述电容器介电层间隔开并且布置在所述多个固定的充电板上的可移动的充电板结构，其中所述可移动的充电板结构包括多个相应地布置的可移动的充电板多个固定的充电板和连接到可移动的充电板结构的致动器，其允许可移动的充电板结构在水平方向上移动。

6. 发明申请

US20060187611A1 Method of fabricating MEMS tunable capacitor with wide tuning range 有权
标题翻译：制造具有宽调谐范围的MEMS可调电容器的方法
公开(公告)号：US20060187611A1
公开(公告)日：2006-08-24
申请号：US11408976
申请日：2006-04-24
申请人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
发明人： Seok-Jun Won , Kang-soo Chu , Weon-Hong Kim
IPC分类号： H01G5/00 , H01G7/00
CPC分类号： H01G5/0136 , H01G5/14 , H01G5/145 , H01G5/18
摘要： A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.
摘要翻译： MEMS可调谐电容器及其制造方法包括在基板上的多个固定的充电板，多个具有相同高度的固定充电板被布置成梳齿形并彼此电连接，覆盖所述多个固定充电板的电容器电介质层，与所述电容器介电层间隔开并且布置在所述多个固定的充电板上的可移动的充电板结构，其中所述可移动的充电板结构包括多个相应地布置的可移动的充电板多个固定的充电板和连接到可移动的充电板结构的致动器，其允许可移动的充电板结构在水平方向上移动。

7. 发明授权

US09583592B2 Methods of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09583592B2
公开(公告)日：2017-02-28
申请号：US14697266
申请日：2015-04-27
申请人： Pan-Kwi Park , Dong-Suk Shin , Seok-Jun Won , Weon-Hong Kim , Jae-Gon Lee
发明人： Pan-Kwi Park , Dong-Suk Shin , Seok-Jun Won , Weon-Hong Kim , Jae-Gon Lee
IPC分类号： H01L29/66 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/8238 , H01L21/8234
CPC分类号： H01L29/66545 , H01L21/02057 , H01L21/0206 , H01L21/0217 , H01L21/02247 , H01L21/02332 , H01L21/31111 , H01L21/32139 , H01L21/823418 , H01L21/823437 , H01L21/823814 , H01L21/823828 , H01L29/6653 , H01L29/6656 , H01L29/66636 , H01L29/7834
摘要： In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure. A nitridation process is performed on the first spacer layer. An upper portion of the substrate adjacent to the dummy gate structure is removed to form a trench. An inner wall of the trench is cleaned. An epitaxial layer is formed to fill the trench. The dummy gate structure is replaced with a gate structure.
摘要翻译：在制造半导体器件的方法中，在基板上形成虚拟栅极结构。在衬底上形成第一间隔层以覆盖虚拟栅极结构。在第一间隔层上进行氮化处理。去除与伪栅极结构相邻的衬底的上部以形成沟槽。清洁沟槽的内壁。形成外延层以填充沟槽。虚拟栅极结构被栅极结构代替。

8. 发明申请

US20100170441A1 Method of Forming Metal Oxide and Apparatus for Performing the Same 审中-公开
标题翻译：形成金属氧化物的方法及其执行装置
公开(公告)号：US20100170441A1
公开(公告)日：2010-07-08
申请号：US12729973
申请日：2010-03-23
申请人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
发明人： Seok-Jun Won , Yong-Min Yoo , Min-Woo Song , Dae-Youn Kim , Young-Hoon Kim , Weon-Hong Kim , Jung-Min Park , Sun-Mi Song
IPC分类号： H01L21/46
CPC分类号： C01G25/02 , C01G23/047 , C01G27/02 , C01G35/00 , C01P2006/40
摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.
摘要翻译：在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。氧化反应的加速可以改善金属氧化物的电特性和均匀性。

9. 发明授权

US07476922B2 Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same 有权
标题翻译：在互连层之间具有垂直延伸的金属 - 绝缘体 - 金属电容器的逻辑器件及其制造方法
公开(公告)号：US07476922B2
公开(公告)日：2009-01-13
申请号：US10969098
申请日：2004-10-20
申请人： Seok-Jun Won , Yong-Kuk Jeong , Dae-Jin Kwon , Min-Woo Song , Weon-Hong Kim
发明人： Seok-Jun Won , Yong-Kuk Jeong , Dae-Jin Kwon , Min-Woo Song , Weon-Hong Kim
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L28/91 , H01L21/76807 , H01L21/76838 , H01L27/0805
摘要： A logic device having a vertically extending MIM capacitor between interconnect layers includes a semiconductor substrate. A lower interconnect layer is located over the semiconductor substrate, and an upper interconnect layer is located over the lower interconnect layer. A U-shaped lower metal plate is interposed between the lower interconnect layer and the upper interconnect layer. The U-shaped lower metal plate directly contacts the lower interconnect layer. The capacitor dielectric layer covers the inner surface of the lower metal plate. Further, the capacitor dielectric layer has an extension portion interposed between the brim of the lower metal plate and the upper interconnect layer. An upper metal plate covers the inner surface of the capacitor dielectric layer. The upper metal plate is in contact with the upper interconnect layer and is confined by the capacitor dielectric layer.
摘要翻译：在互连层之间具有垂直延伸的MIM电容器的逻辑器件包括半导体衬底。下部互连层位于半导体衬底上方，并且上互连层位于下互连层上。 U形下金属板插入在下互连层和上互连层之间。 U形下金属板直接接触下互连层。电容器电介质层覆盖下金属板的内表面。此外，电容器介电层具有插入在下金属板的边缘和上互连层之间的延伸部分。上金属板覆盖电容器介电层的内表面。上金属板与上互连层接触并被电容器电介质层约束。

10. 发明授权

US07232492B2 Method of forming thin film for improved productivity 有权
标题翻译：形成薄膜以提高生产率的方法
公开(公告)号：US07232492B2
公开(公告)日：2007-06-19
申请号：US11007884
申请日：2004-12-09
申请人： Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon
发明人： Seok-Jun Won , Weon-Hong Kim , Dae-Jin Kwon
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00
CPC分类号： C23C16/4404 , C23C16/4405 , H01L21/3141 , H01L21/31637
摘要： There is provided a method of forming a thin film for providing improved fabrication productivity. The method includes introducing a semiconductor substrate into a process chamber. A process thin film is formed on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed. The semiconductor substrate is removed from the process chamber. A stress relief layer is formed on the chamber coating layer. After all of the above operations are repeatedly performed at least one time, an in-situ cleaning is performed on the chamber coating layer and the stress relief layer, which are alternately formed in stack on the inner walls of the process chamber.
摘要翻译：提供了形成薄膜以提高制造生产率的方法。该方法包括将半导体衬底引入到处理室中。在半导体衬底上形成工艺薄膜，其中在形成工艺薄膜的同时，在处理室的内壁上形成腔室涂层。将半导体衬底从处理室中取出。在室涂层上形成应力消除层。在上述操作全部反复进行至少一次之后，对处理室内壁交替形成的室涂层和应力消除层进行原位清洗。

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