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1. 发明专利

JP2005166999A Processing method of substrate and method for reducing influence on processing of substrate by fluctuation of exposure quantity or focal position when substrate is exposed 审中-公开
标题翻译：衬底的加工方法和减少衬底暴露时暴露量或焦点位置的影响来减少衬底加工的影响的方法
公开(公告)号：JP2005166999A
公开(公告)日：2005-06-23
申请号：JP2003404422
申请日：2003-12-03
申请人： Semiconductor Leading Edge Technologies Inc , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 株式会社半導体先端テクノロジーズ
发明人： HORI SHINYA , ENOMOTO MASASHI , YOSHIHARA KOSUKE , ITANI TOSHIRO , FURUKAWA TAKAMITSU , KAWAGUCHI ETSURO , MATSUNAGA KENTARO
IPC分类号： G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce influence to a processing of a wafer due to fluctuation of exposure quantity and a focal position when a wafer is exposed.
SOLUTION: A PEB device 44 is divided into a heating front chamber 61 and a heating chamber 62. Drying gas can be supplied to the respective chambers 61 and 62 from a drying gas supplying device 77. At the time of a resist application processing, the wafer W to which resist liquid including a fluorine content compound is applied is conveyed to the heating front chamber 61 after an exposure processing. The heating front chamber 61 is replaced by drying atmosphere later. The wafer W is transported into the heat chamber 62 which is previously maintained to drying atmosphere, and is heated within drying atmosphere. Resist liquid containing the fluorine content compound is applied to the wafer W at the time of applying resist. The wafer W is heated in drying atmosphere at the time of a heating processing after exposure. Thus, influence exerted on pattern line width on the wafer due to fluctuation of exposure quantity and the focal position at the time of exposure is reduced.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了减少由于曝光量的波动和晶片曝光时的焦点位置对晶片的处理的影响。解决方案：PEB装置44被分成加热前室61和加热室62.干燥气体可以从干燥气体供应装置77供应到各个室61和62中。在抗蚀剂施加时在施加了包含氟含量化合物的抗蚀剂液体的晶片W在曝光处理之后被传送到加热前室61。稍后，由干燥气氛代替加热前室61。将晶片W输送到预先保持干燥气氛的加热室62中，并在干燥气氛中加热。在施加抗蚀剂时，将包含含氟化合物的抗蚀剂液体施加到晶片W. 在曝光后的加热处理中，在干燥气氛中加热晶片W. 因此，由于暴露量的波动和曝光时的焦点位置而对晶片上的图案线宽度的影响减小。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005227718A Micropattern forming method 审中-公开
标题翻译：微波成像方法
公开(公告)号：JP2005227718A
公开(公告)日：2005-08-25
申请号：JP2004038840
申请日：2004-02-16
申请人： Daikin Ind Ltd , Semiconductor Leading Edge Technologies Inc , ダイキン工業株式会社 , 株式会社半導体先端テクノロジーズ
发明人： ARAKI TAKAYUKI , YAMASHITA TSUNEO , ISHIKAWA TAKUJI , YOSHIDA TOMOHIRO , HAGIWARA TAKUYA , FURUKAWA TAKAMITSU
IPC分类号： C08F214/18 , C08F232/08 , G03C1/492 , G03F7/004 , G03F7/033 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0395 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a micropattern forming method using a highly practical fluorine-containing polymer capable of improving dry etching resistance with respect to a fluorine-containing polymer having high transparency to exposure light of a short wavelength such as F 2 excimer laser light. SOLUTION: The micropattern forming method includes (I) a step of preparing a resist composition comprising (a) a fluorine-containing polymer containing a protective group, (b) a photoacid generator and (c) a solvent; (II) a step of forming a resist film comprising the resist composition on a substrate; (III) a step of exposing a prescribed area of the resist film; and (IV) a step of forming a micropattern by selectively removing the exposed portions of the resist film by development after the exposure, wherein the fluorine-containing polymer (a) containing the protective group is a fluorine-containing polymer comprising an OH-containing norbornene structural unit (M2-1A) and a norbornene structural unit (M2-1B) containing a saturated hydrocarbon group including a structure of a bicyclo saturated hydrocarbon as a protective group. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用高度实用的含氟聚合物的微图案形成方法，该聚合物能够相对于具有高透明度的具有高透明度的短波长的曝光光，例如F < SB> 2 准分子激光。微型图案形成方法包括（I）制备抗蚀剂组合物的步骤，该抗蚀剂组合物包含（a）含有保护基的含氟聚合物，（b）光致酸产生剂和（c）溶剂; （II）在基板上形成含有抗蚀剂组合物的抗蚀剂膜的工序; （III）暴露抗蚀剂膜的规定区域的步骤; 以及（IV）通过在曝光后通过显影来选择性除去抗蚀剂膜的露出部分而形成微图案的步骤，其中含有保护基的含氟聚合物（a）是含有OH的含氟聚合物降冰片烯结构单元（M2-1A）和含有作为保护基的双环饱和烃结构的饱和烃基的降冰片烯结构单元（M2-1B）。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004214513A Apparatus and method for applying resist and method for manufacturing semiconductor device 审中-公开
标题翻译：用于制造电阻器的装置和方法以及制造半导体器件的方法
公开(公告)号：JP2004214513A
公开(公告)日：2004-07-29
申请号：JP2003001505
申请日：2003-01-07
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： FURUKAWA TAKAMITSU
IPC分类号： G03F7/16 , B05C11/08 , B05D1/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a resist film without coating defects by supplying the resist solution stably onto a substrate. SOLUTION: At the leading end of a resist discharge nozzle 1, a guide bar 13 extended toward the substrate 4 from the center of the leading end is arranged. While the leading end of the resist discharge nozzle 1 is arranged in the vicinity of the surface of the substrate 4, resist solution 14 is discharged from the leading end at a low discharge rate of 0.5 cc/sec, and the discharged resist solution 14 is fed onto the surface of the substrate 4 via the guide bar 13. After the resist discharge nozzle 1 is removed by rotating the substrate 4 at a high speed, the resist solution 14 is spread over the whole surface of the substrate 4. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：通过将抗蚀剂溶液稳定地供给到基板上，形成没有涂覆缺陷的抗蚀剂膜。解决方案：在抗蚀剂排出喷嘴1的前端设置有从引导端的中心向基板4延伸的引导杆13。虽然抗蚀剂排出喷嘴1的前端布置在基板4的表面附近，但抗蚀剂溶液14以0.5cc / sec的低放电速率从前端排出，并且排出的抗蚀剂溶液14为通过导杆13将其馈送到基板4的表面上。在通过高速旋转基板4去除抗蚀剂排出喷嘴1之后，将抗蚀剂溶液14铺展在基板4的整个表面上。版权所有（C）2004，JPO＆NCIPI

4. 发明专利

JP2005029742A Polysiloxane and radiation-sensitive resin composition 有权
标题翻译：聚硅氧烷和辐射敏感性树脂组合物
公开(公告)号：JP2005029742A
公开(公告)日：2005-02-03
申请号：JP2003273289
申请日：2003-07-11
申请人： Jsr Corp , Jsr株式会社 , Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： CHIBA TAKASHI , SHIMOKAWA TSUTOMU , HAYASHI AKIHIRO , ITANI TOSHIRO , MITSUYOSHI YASURO , FURUKAWA TAKAMITSU
IPC分类号： G03F7/075 , C08G77/24 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a new polysiloxane that has high transparency to the radial rays of ≤200 nm wavelength, high resolution and excellent coating properties and is useful as a resin component for resists and bears a fluorine-containing norbornane skeleton and provide a radiation-sensitive resin composition including the same.
SOLUTION: The polysiloxane comprises at least one of structural unit selected from a structural unit represented by formula (I) and a structural unit represented by formula (II) and at least one of structural unit selected from a structural unit represented by formula (III) and a structural unit represented by formula (IV) [wherein X
1 and X
2 are each H, a monovalent (halogenated) hydrocarbon, a halogen atom, or an amino; B is H or F; n and m are each 0 or 1, p is an integer of 1-10]. The radiation-sensitive resin composition includes the polysiloxane and the radiation-sensitive acid generator.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供对波长≤200nm的径向射线具有高透明度的高聚物，高分辨率和优异的涂布性能，并且可用作抗蚀剂和承载含氟降冰片烷骨架的树脂组分并提供包含其的辐射敏感性树脂组合物。解决方案：聚硅氧烷包括选自由式（I）表示的结构单元和由式（II）表示的结构单元的结构单元中的至少一种和选自由式（III）和由式（IV）表示的结构单元[其中X 1 和X 2 分别为H，一价（卤代）烃，卤素原子或氨基; B为H或F; n和m各自为0或1，p为1-10的整数]。辐射敏感性树脂组合物包括聚硅氧烷和辐射敏感性酸发生剂。版权所有（C）2005，JPO＆NCIPI

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