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1. 发明授权

US10580662B2 Semiconductor device, manufacturing method thereof, display device, and electronic device 有权
公开(公告)号：US10580662B2
公开(公告)日：2020-03-03
申请号：US16270624
申请日：2019-02-08
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masami Jintyou , Junichi Koezuka , Takashi Hamochi , Yasuharu Hosaka
IPC分类号： H01L21/00 , H01L21/385 , H01L21/02 , H01L21/44 , H01L21/443 , H01L21/4757 , H01L29/04 , H01L29/49 , H01L29/66 , H01L29/786 , H01L29/51
摘要： The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

2. 发明授权

US10204798B2 Semiconductor device, manufacturing method thereof, display device, and electronic device 有权
公开(公告)号：US10204798B2
公开(公告)日：2019-02-12
申请号：US15431002
申请日：2017-02-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masami Jintyou , Junichi Koezuka , Takashi Hamochi , Yasuharu Hosaka
IPC分类号： H01L21/00 , H01L21/385 , H01L21/02 , H01L21/44 , H01L21/443 , H01L21/4757 , H01L29/04 , H01L29/49 , H01L29/66 , H01L29/786 , H01L29/51
摘要： The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

3. 发明授权

US09954117B2 Semiconductor device and display device including the semiconductor device 有权
公开(公告)号：US09954117B2
公开(公告)日：2018-04-24
申请号：US15661040
申请日：2017-07-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Junichi Koezuka , Masami Jintyou , Yukinori Shima , Takashi Hamochi , Yasutaka Nakazawa , Shunpei Yamazaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/66 , H01L29/49 , H01L29/24 , H01L29/417 , H01L27/12 , H01L29/45 , H01L27/32
CPC分类号： H01L29/78696 , H01L27/1225 , H01L27/3262 , H01L29/24 , H01L29/41733 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78621 , H01L29/78627 , H01L29/7869 , H01L2029/7863
摘要： A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

4. 发明授权

US09627413B2 Semiconductor device and display device 有权
公开(公告)号：US09627413B2
公开(公告)日：2017-04-18
申请号：US14567205
申请日：2014-12-11
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kenichi Okazaki , Takashi Hamochi , Yukinori Shima , Shunpei Yamazaki
IPC分类号： H01L27/12 , H01L29/786 , H01L29/04 , H01L29/417 , H01L29/423
CPC分类号： H01L27/1225 , H01L29/045 , H01L29/41733 , H01L29/42384 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L29/78696 , H01L2029/42388
摘要： The semiconductor device includes a transistor including an oxide semiconductor film, a first gate electrode overlapping with the oxide semiconductor film, a gate insulating film between the oxide semiconductor film and the first gate electrode, a first insulating film over the oxide semiconductor film, a pair of electrodes that are over the first insulating film and electrically connected to the oxide semiconductor film, a second insulating film over the first insulating film and the pair of electrodes, and a second gate electrode that is over the second insulating film and overlaps with the oxide semiconductor film. The first insulating film includes a region having a thickness of 1 nm or more and 50 nm or less, and the pair of electrodes includes a region in which a distance between the electrodes is 1 μm or more and 6 μm or less.

5. 发明授权

US09437594B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09437594B2
公开(公告)日：2016-09-06
申请号：US13947724
申请日：2013-07-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Tetsuhiro Tanaka , Yoshinori Ieda , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01L27/088 , H01L27/06 , H01L27/12
CPC分类号： H01L27/1207 , H01L27/0688 , H01L27/088 , H01L27/1225
摘要： A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
摘要翻译：提供一种防止在包括氧化物半导体的晶体管中氢扩散到氧化物半导体膜中的氮化物绝缘膜。此外，提供了通过使用包括硅半导体的晶体管和包括氧化物半导体的晶体管具有良好的电特性的半导体器件。在包括硅半导体的晶体管和包括氧化物半导体的晶体管之间提供具有不同功能的两个氮化物绝缘膜。具体地说，在包括硅半导体的晶体管上设置含有氢的第一氮化物绝缘膜，并且在第一氮化物绝缘膜之间具有比第一氮化物绝缘膜低的氢含量并用作阻止氢的阻挡膜的第二氮化物绝缘膜第一氮化物绝缘膜和包括氧化物半导体的晶体管。

6. 发明申请

US20150214376A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150214376A1
公开(公告)日：2015-07-30
申请号：US14550091
申请日：2014-11-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Junichi Koezuka , Yukinori Shima , Masami Jintyou , Takashi Hamochi , Satoshi Higano , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/45
CPC分类号： H01L29/7869 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/4966 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.
摘要翻译：提供一种新颖的半导体器件，其包括晶体管和含有Cu的金属膜用于布线，信号线等。半导体器件包括第一布线，第二布线，第一晶体管和第二晶体管。第一布线电连接到第一晶体管的源极或漏极，并且第二布线电连接到第二晶体管的栅极。第一布线和第二布线均包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。第一布线中的Cu-X合金膜与第二布线中的Cu-X合金膜连接。

7. 发明授权

US09048324B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09048324B2
公开(公告)日：2015-06-02
申请号：US13875507
申请日：2013-05-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki
IPC分类号： H01L29/12 , H01L29/786 , H01L29/423 , H01L29/49
CPC分类号： H01L29/66969 , H01L29/401 , H01L29/42384 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.
摘要翻译：提供了一种高度可靠的半导体器件，其产量可以防止由于静电放电损坏而降低。提供了一种半导体器件，其包括栅极电极层，栅极电极层上的第一栅极绝缘层，在第一栅极绝缘层之上并且具有比第一栅极绝缘层更小的厚度的第二栅极绝缘层，氧化物半导体层，以及与氧化物半导体层电连接的源电极层和漏电极层。第一栅极绝缘层含有氮，并且对应于在电子自旋共振光谱法中出现在g-因子2.003处的信号，其自旋密度为1×1017自旋/ cm3或更小。第二栅极绝缘层含有氮并且具有比第一栅极绝缘层低的氢浓度。

8. 发明授权

US08995607B2 Pulse signal output circuit and shift register 有权
标题翻译：脉冲信号输出电路和移位寄存器
公开(公告)号：US08995607B2
公开(公告)日：2015-03-31
申请号：US13903193
申请日：2013-05-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hiroyuki Miyake , Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Shunpei Yamazaki
IPC分类号： G11C19/00 , G11C19/18 , H03K3/353 , G11C19/28
CPC分类号： H03K3/353 , G11C19/184 , G11C19/28
摘要： To provide a pulse signal output circuit and a shift register which have lower power consumption, are not easily changed over time, and have a longer lifetime. A pulse signal output circuit includes a first input signal generation circuit; a second input signal generation circuit; an output circuit which includes a first transistor and a second transistor and outputs a pulse signal in response to a signal output from the first and second input signal generation circuits; a monitor circuit which obtains the threshold voltages of the first and second transistors; and a power supply output circuit which generates a power supply potential raised by a potential higher than or equal to a potential which is equal to or substantially equal to the threshold voltage and supplies the power supply potential to the first and second input signal generation circuits. A shift register includes the pulse signal output circuit.
摘要翻译：为了提供具有较低功耗的脉冲信号输出电路和移位寄存器，不容易随着时间而改变，并且具有更长的寿命。脉冲信号输出电路包括第一输入信号发生电路; 第二输入信号产生电路; 输出电路，包括第一晶体管和第二晶体管，并响应于从第一和第二输入信号产生电路输出的信号输出脉冲信号; 获取第一和第二晶体管的阈值电压的监视器电路; 以及电源输出电路，其产生电位电位升高高于或等于阈值电压的电位的电位，并将电源电位提供给第一和第二输入信号发生电路。移位寄存器包括脉冲信号输出电路。

9. 发明申请

US20130322592A1 PULSE SIGNAL OUTPUT CIRCUIT AND SHIFT REGISTER 有权
标题翻译：脉冲信号输出电路和移位寄存器
公开(公告)号：US20130322592A1
公开(公告)日：2013-12-05
申请号：US13903193
申请日：2013-05-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hiroyuki Miyake , Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Shunpei Yamazaki
IPC分类号： H03K3/353 , G11C19/28
CPC分类号： H03K3/353 , G11C19/184 , G11C19/28
摘要： To provide a pulse signal output circuit and a shift register which have lower power consumption, are not easily changed over time, and have a longer lifetime. A pulse signal output circuit includes a first input signal generation circuit; a second input signal generation circuit; an output circuit which includes a first transistor and a second transistor and outputs a pulse signal in response to a signal output from the first and second input signal generation circuits; a monitor circuit which obtains the threshold voltages of the first and second transistors; and a power supply output circuit which generates a power supply potential raised by a potential higher than or equal to a potential which is equal to or substantially equal to the threshold voltage and supplies the power supply potential to the first and second input signal generation circuits. A shift register includes the pulse signal output circuit.
摘要翻译：为了提供具有较低功耗的脉冲信号输出电路和移位寄存器，不容易随着时间而改变，并且具有更长的寿命。脉冲信号输出电路包括第一输入信号发生电路; 第二输入信号产生电路; 输出电路，包括第一晶体管和第二晶体管，并响应于从第一和第二输入信号产生电路输出的信号输出脉冲信号; 获取第一和第二晶体管的阈值电压的监视器电路; 以及电源输出电路，其产生电位电位升高高于或等于阈值电压的电位的电位，并将电源电位提供给第一和第二输入信号发生电路。移位寄存器包括脉冲信号输出电路。

10. 发明授权

US11757007B2 Metal oxide film and semiconductor device 有权
公开(公告)号：US11757007B2
公开(公告)日：2023-09-12
申请号：US17370221
申请日：2021-07-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
IPC分类号： H01L29/24 , H01L29/778 , H01L29/786 , H01L27/12 , C03C17/245 , C04B35/01 , C04B35/453 , C04B35/622 , C23C14/08 , C23C14/58
CPC分类号： H01L29/24 , C03C17/245 , C04B35/01 , C04B35/453 , C04B35/62218 , C23C14/08 , C23C14/5853 , H01L27/1225 , H01L29/7782 , H01L29/7786 , H01L29/7869 , H01L29/78648 , H01L29/78696 , C03C2217/23 , C03C2218/151 , C04B2235/3217 , C04B2235/3225 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/787 , C04B2235/96
摘要： A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

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