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1. 发明授权

US09966475B2 Semiconductor device 有权
公开(公告)号：US09966475B2
公开(公告)日：2018-05-08
申请号：US15630012
申请日：2017-06-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/423 , H01L29/51
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

2. 发明授权

US09412874B2 Semiconductor device 有权
公开(公告)号：US09412874B2
公开(公告)日：2016-08-09
申请号：US14706282
申请日：2015-05-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/51 , H01L29/49
CPC分类号： H01L29/66969 , H01L29/401 , H01L29/42384 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

3. 发明授权

US09337342B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09337342B2
公开(公告)日：2016-05-10
申请号：US13833389
申请日：2013-03-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Shunpei Yamazaki , Toshinari Sasaki
IPC分类号： H01L29/78 , H01L21/16 , H01L29/786 , H01L29/66
CPC分类号： H01L29/66969 , H01L21/0217 , H01L21/02271 , H01L21/02565 , H01L21/47573 , H01L27/1225 , H01L27/1259 , H01L29/7869 , H01L29/78696
摘要： In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.
摘要翻译：在包括氧化物半导体的半导体器件中，氧空位的量减少。此外，提高了包括氧化物半导体的半导体器件的电特性。半导体器件包括晶体管，其包括在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅电极重叠的氧化物半导体膜，其间设置有栅极绝缘膜，以及与氧化物接触的一对电极半导体膜; 并且在所述晶体管上方，覆盖所述栅极绝缘膜，所述氧化物半导体膜和所述一对电极的第一绝缘膜; 以及覆盖所述第一绝缘膜的第二绝缘膜。第一绝缘膜的蚀刻速率低于或等于10nm / min，并且当在25℃下用0.5重量％的氢氟酸进行蚀刻时，蚀刻速率低于第二绝缘膜的蚀刻速率。

4. 发明授权

US09054200B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09054200B2
公开(公告)日：2015-06-09
申请号：US13856452
申请日：2013-04-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi
IPC分类号： H01L29/786 , H01L29/66 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/1248 , H01L29/66742
摘要： Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g/cm3 and lower than or equal to 2.63 g/cm3 and whose spin density of a signal with a g value of 2.001 is 2×1015 spins/cm3 or less in electron spin resonance.
摘要翻译：改善使用氧化物半导体的半导体器件的电特性。此外，制造其中电特性随时间变化或由于具有光照射的门BT应力测试而导致的电特性变化小的高度可靠的半导体器件。晶体管包括栅电极，与其间具有栅绝缘膜的栅电极的一部分重叠的氧化物半导体膜和与氧化物半导体膜接触的一对电极。栅极绝缘膜是其膜密度高于或等于2.26g / cm 3且低于或等于2.63g / cm 3的绝缘膜，并且具有ag值为2.001的信号的自旋密度为2×1015自旋/ cm3 或更少的电子自旋共振。

5. 发明授权

US10134852B2 Semiconductor device 有权
公开(公告)号：US10134852B2
公开(公告)日：2018-11-20
申请号：US13920442
申请日：2013-06-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshinari Sasaki , Takashi Hamochi , Toshiyuki Miyamoto , Masafumi Nomura , Junichi Koezuka , Kenichi Okazaki
IPC分类号： H01L29/78 , H01L21/16 , H01L29/24 , H01L21/47 , H01L21/00 , H01L29/786
摘要： In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.

6. 发明授权

US09831325B2 Semiconductor device 有权
公开(公告)号：US09831325B2
公开(公告)日：2017-11-28
申请号：US15204085
申请日：2016-07-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki
IPC分类号： H01L29/10 , H01L29/66 , H01L29/786 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/40
CPC分类号： H01L29/66969 , H01L29/401 , H01L29/42384 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

7. 发明授权

US09320111B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09320111B2
公开(公告)日：2016-04-19
申请号：US13900907
申请日：2013-05-23
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hiroyuki Miyake , Kenichi Okazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Shunpei Yamazaki
IPC分类号： G09G3/10 , H05B37/02 , G09G3/32
CPC分类号： H05B37/02 , G09G3/3258 , G09G2300/043 , G09G2300/0819 , G09G2300/0842 , G09G2320/043 , G09G2320/045 , Y02B20/42
摘要： A light-emitting device that is less influenced by variations in threshold voltage of a transistor is provided. Further, a light-emitting device in which variations in luminance due to variations in threshold voltage of a transistor can be reduced is provided. Further, influences due to variations in threshold voltage of a transistor are corrected in a short time. A light-emitting element, a transistor functioning as a switch supplying current to the light-emitting element, and a circuit in which threshold voltage of the transistor is obtained and voltage between a gate and a source (gate voltage) of the transistor is corrected in accordance with the obtained threshold voltage are included. An n-channel transistor in which threshold voltage changes in a positive direction and the amount of the change is small is used. When the threshold voltage of the transistor is obtained, the gate voltage of the transistor is adjusted as appropriate.
摘要翻译：提供了较少受到晶体管的阈值电压变化影响的发光器件。此外，提供了可以减少由于晶体管的阈值电压的变化引起的亮度变化的发光装置。此外，由于晶体管的阈值电压的变化引起的影响在短时间内被校正。发光元件，用作向发光元件提供电流的开关的晶体管和获得晶体管的阈值电压并且校正晶体管的栅极和源极（栅极电压）之间的电压的电路根据获得的阈值电压。使用其中阈值电压在正方向上变化并且变化量小的n沟道晶体管。当获得晶体管的阈值电压时，适当调整晶体管的栅极电压。

8. 发明授权

US09159837B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09159837B2
公开(公告)日：2015-10-13
申请号：US13875499
申请日：2013-05-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.
摘要翻译：提供了一种高度可靠的半导体器件，其产量可以防止由于静电放电损坏而降低。提供一种半导体器件，其包括栅极电极层，栅极电极层上的栅极绝缘层，栅极绝缘层上的氧化物绝缘层，氧化物半导体层，其与氧化物绝缘层在上方并与其接触栅极电极层以及与氧化物半导体层电连接的源极电极层和漏极电极层。栅绝缘层包括含氮的硅膜。氧化物绝缘层含有选自氧化物半导体层的构成元素的一种以上的金属元素。栅极绝缘层的厚度大于氧化物绝缘层的厚度。

9. 发明授权

US10141337B2 Semiconductor device 有权
公开(公告)号：US10141337B2
公开(公告)日：2018-11-27
申请号：US15723227
申请日：2017-10-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Tetsuhiro Tanaka , Yoshinori Ieda , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01L27/12 , H01L27/06 , H01L27/088
摘要： A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

10. 发明授权

US09793295B2 Semiconductor device 有权
公开(公告)号：US09793295B2
公开(公告)日：2017-10-17
申请号：US15251375
申请日：2016-08-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Tetsuhiro Tanaka , Yoshinori Ieda , Toshiyuki Miyamoto , Masafumi Nomura , Takashi Hamochi , Kenichi Okazaki , Mitsuhiro Ichijo , Toshiya Endo
IPC分类号： H01L27/12 , H01L27/06 , H01L27/088
CPC分类号： H01L27/1207 , H01L27/0688 , H01L27/088 , H01L27/1225
摘要： A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

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