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1. 发明专利

JP2015005767A 酸化物半導体膜の作製方法有权
标题翻译：氧化物半导体膜的制造方法
公开(公告)号：JP2015005767A
公开(公告)日：2015-01-08
申请号：JP2014167289
申请日：2014-08-20
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： YAMAZAKI SHUNPEI , SAKAKURA MASAYUKI , MIYANAGA SHOJI , TAKAHASHI MASAHIRO , HIROHASHI TAKUYA , SHIMAZU TAKASHI
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要：【課題】半導体装置に用いるのに好適な新たな構造の酸化物半導体膜を提供することを目的の一とする。または、新たな構造の酸化物半導体膜を用いた半導体装置を提供することを目的の一とする。【解決手段】非晶質を主たる構成とする非晶質領域と、表面近傍の、In2Ga2ZnO7の結晶粒を含む結晶領域と、を有し、結晶粒は、そのc軸が、表面に対して略垂直な方向となるように配向している酸化物半導体膜である。または、このような酸化物半導体膜を用いた半導体装置である。【選択図】図1
摘要翻译：要解决的问题：提供一种具有新结构的氧化物半导体膜，其优选用于半导体器件，并提供使用具有新结构的氧化物半导体膜的半导体器件。解决方案：氧化物半导体膜包括：非晶形含有无定形作为主要成分的区域; 以及在表面附近含有InGaZnO的晶粒的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。或者，半导体器件使用这种氧化物半导体膜。

2. 发明专利

JP2014241440A 半導体装置有权
标题翻译：半导体器件
公开(公告)号：JP2014241440A
公开(公告)日：2014-12-25
申请号：JP2014177125
申请日：2014-09-01
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： YAMAZAKI SHUNPEI , MIYAIRI HIDEKAZU , MIYANAGA SHOJI , AKIMOTO KENGO , SHIRAISHI KOJIRO
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L51/50 , H05B33/08
CPC分类号： H01L29/66772 , H01L29/6675 , H01L29/78618 , H01L29/7869
摘要：【課題】電気特性及び信頼性の高い薄膜トランジスタを有する半導体装置、及び該半導体装置を量産高く作製する方法を提案することを課題とする。【解決手段】半導体層としてIn、Ga、及びZnを含む酸化物半導体膜を用い、半導体層とソース電極層及びドレイン電極層との間にバッファ層が設けられた順スタガ型(トップゲート構造)の薄膜トランジスタを含むことを要旨とする。ソース電極層及びドレイン電極層と半導体層との間に、半導体層よりもキャリア濃度の高いバッファ層を意図的に設けることによってオーミック性のコンタクトを形成する。【選択図】図1
摘要翻译：要解决的问题：提出一种具有高电特性和高可靠性的薄膜晶体管的半导体器件; 并提出了一种制造具有高质量生产率的半导体器件的方法。解决方案：一种半导体器件包括使用包含In，Ga和Zn作为半导体层的氧化物半导体膜的交错（顶栅结构）薄膜晶体管，其中在半导体层与源电极层和漏电极层之间设置有缓冲层。通过有意地提供具有比源极电极层和漏极电极层和半导体层之间的半导体层的载流子浓度更高的载流子浓度的缓冲层，形成欧姆接触。

3. 发明专利

JP2013214752A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2013214752A
公开(公告)日：2013-10-17
申请号：JP2013096196
申请日：2013-05-01
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： MIYANAGA SHOJI , SAKATA JUNICHIRO , SAKAKURA MASAYUKI , YAMAZAKI SHUNPEI
IPC分类号： H01L21/336 , G02F1/1368 , G02F1/19 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L21/02565 , H01L21/02631 , H01L21/477 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor having favorable electric characteristics and high reliability, and to provide a display device using the thin film transistor as a switching element.SOLUTION: An In-Ga-Zn-O-based film is formed so as to have an incubation state exhibiting an electron beam diffraction pattern different from a conventionally known amorphous state that a halo shape pattern appears, and different from a conventionally known crystal state that a spot appears clearly, and the In-Ga-Zn-O-based film is used as a channel formation region of a channel etched thin film transistor.
摘要翻译：要解决的问题：提供具有良好的电特性和高可靠性的薄膜晶体管，并提供使用薄膜晶体管作为开关元件的显示装置。解决方案：形成In-Ga-Zn-O系膜具有表现出与常规已知的无定形状态不同的电子束衍射图案的孵育状态，其出现光晕形状图案，并且与常规已知的晶体状态不同，斑点出现明显，In-Ga-Zn-O 基膜被用作沟道蚀刻薄膜晶体管的沟道形成区域。

4. 发明专利

JP2013149994A Oxide semiconductor film 有权
标题翻译：氧化物半导体膜
公开(公告)号：JP2013149994A
公开(公告)日：2013-08-01
申请号：JP2013042839
申请日：2013-03-05
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , TSUBUKI MASASHI , AKIMOTO KENGO , OHARA HIROKI , HONDA TATSUYA , KOMATA TAKASHI , NONAKA YUSUKE , TAKAHASHI MASAHIRO , MIYANAGA SHOJI
IPC分类号： H01L21/363 , H01L21/20 , H01L21/36 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor film with more stable electric conductivity, and to provide a semiconductor device with high reliability by giving stable electrical characteristics to the semiconductor device with use of the oxide semiconductor film.SOLUTION: The oxide semiconductor film comprises a region having crystal characteristics, and consists of a crystal where, in the region having the crystal characteristics, an a-b plane is approximately parallel to a film surface and a c-axis is approximately perpendicular to the film surface. The oxide semiconductor film comprises structure more electrically stable against irradiation such as visible light or UV light. By using the oxide semiconductor film as a transistor, the highly reliable semiconductor device with stable electric characteristics can be provided.
摘要翻译：要解决的问题：提供具有更稳定导电性的氧化物半导体膜，并且通过使用氧化物半导体膜向半导体器件提供稳定的电特性来提供具有高可靠性的半导体器件。解决方案：氧化物半导体膜包括具有晶体特性的区域，并且由在具有晶体特性的区域中的ab平面大致平行于膜表面并且c轴近似垂直于膜表面的晶体构成。氧化物半导体膜包括对可见光或UV光等照射的电化学稳定性。通过使用氧化物半导体膜作为晶体管，可以提供具有稳定电特性的高可靠性的半导体器件。

5. 发明专利

JP2013110425A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2013110425A
公开(公告)日：2013-06-06
申请号：JP2012282461
申请日：2012-12-26
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , SAKAKURA MASAYUKI , WATANABE RYOSUKE , SAKATA JUNICHIRO , AKIMOTO KENGO , MIYANAGA SHOJI , HIROHASHI TAKUYA , KISHIDA HIDEYUKI
IPC分类号： H01L21/336 , G09F9/30 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a transistor having favorable electric characteristics and high reliability, and provide a display device using the transistor.SOLUTION: A bottom-gate transistor using an oxide semiconductor for a channel region, comprises an active layer composed of an oxide semiconductor layer dehydrated or dehydrogenated by heat treatment. The active layer includes a first region on a fine crystallized superficial layer part and a second region other than the first region. By using the oxide semiconductor layer having such a structure, a change to an n-type due to re-entry of moisture from the superficial layer part or elimination of oxygen, and generation of a parasitic channel, are suppressed. And contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.
摘要翻译：要解决的问题：提供具有良好的电特性和高可靠性的晶体管，并提供使用该晶体管的显示装置。解决方案：使用氧化物半导体用于沟道区的底栅晶体管包括由通过热处理脱水或脱氢的氧化物半导体层构成的有源层。有源层包括微细结晶表层部分上的第一区域和除第一区域之外的第二区域。通过使用具有这种结构的氧化物半导体层，抑制了由于从表面层部分重新进入水分而导致的n型变化或氧的消除以及寄生通道的产生。并且可以减小氧化物半导体层与源极和漏极之间的接触电阻。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013102197A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2013102197A
公开(公告)日：2013-05-23
申请号：JP2013005976
申请日：2013-01-17
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： MIYANAGA SHOJI , HONDA TATSUYA
IPC分类号： H01L29/786 , H01L21/66
CPC分类号： H01L29/7869 , G01R27/2623 , H01L22/14 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696 , H01L29/94
摘要： PROBLEM TO BE SOLVED: To improve the electric characteristics of a transistor by adjusting the physical property value of an oxide semiconductor layer by solving the problem in which: the correlation between the electric characteristics of a transistor including an oxide semiconductor layer and the physical property value of the oxide semiconductor layer are not yet clarified because the field of the oxide semiconductor has started to attract attention in recent years.SOLUTION: A semiconductor device includes at least a gate electrode, an oxide semiconductor layer, and a gate insulation layer held between the gate electrode and the oxide semiconductor layer. The oxide semiconductor layer has a dielectric constant of 13 or more (or 14 or more).
摘要翻译：要解决的问题：为了通过解决以下问题来调节氧化物半导体层的物理性能来改善晶体管的电特性：其中包括氧化物半导体层的晶体管的电特性与氧化物半导体层的物理性能值尚未得到澄清，因为氧化物半导体的领域近年来开始引起关注。解决方案：半导体器件至少包括栅电极，氧化物半导体层和保持在栅电极和氧化物半导体层之间的栅绝缘层。氧化物半导体层的介电常数为13以上（14以上）。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013058758A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013058758A
公开(公告)日：2013-03-28
申请号：JP2012203749
申请日：2012-09-17
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , KOYAMA JUN , TAKAHASHI MASAHIRO , KISHIDA HIDEYUKI , MIYANAGA SHOJI , SUGAO ATSUHEI , UOJI HIDEKI , NAKAMURA YASUO
IPC分类号： H01L29/786 , G02F1/1343 , G02F1/1345 , G02F1/1368 , G09F9/30 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/532 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device typified by a display device using an oxide semiconductor layer, which accepts a large-sized display screen and a highly-defined display screen and achieves an excellent display quality, a stable operation, and high reliability.SOLUTION: Increase in wiring resistance is suppressed by using a conductive layer containing Cu for wiring wired for a long distance. Cu diffusion can be prevented and a semiconductor device having excellent reliability can be manufactured by arranging the conductive layer containing Cu so as not to overlap an oxide semiconductor layer on which a channel region of TFT is formed and by enfolding the conductive layer with insulation layers each containing a silicon nitride. Particularly, even when a display device that is one embodiment of the semiconductor device grows in size or is highly defined, the display device can stably operate with an excellent display quality.
摘要翻译：解决的问题：为了提供一种以显示装置为代表的半导体器件，该显示装置采用氧化物半导体层，其接受大尺寸显示屏和高度定义的显示屏，并实现了优异的显示质量，稳定的操作，高可靠性。解决方案：通过使用包含Cu的导电层用于长距离布线的布线来抑制布线电阻的增加。可以防止Cu扩散，并且可以通过布置含有Cu的导电层以不与其上形成有TFT的沟道区域的氧化物半导体层重叠并且通过将导电层各自的绝缘层包围来制造具有优异的可靠性的半导体器件含有氮化硅。特别地，即使当半导体器件的一个实施例的显示装置尺寸增长或高度限定时，显示装置可以以优异的显示质量稳定地操作。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2011119712A Method of evaluating oxide semiconductor and method of manufacturing semiconductor device 有权
标题翻译：氧化物半导体评价方法及制造半导体器件的方法
公开(公告)号：JP2011119712A
公开(公告)日：2011-06-16
申请号：JP2010246924
申请日：2010-11-03
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MIYANAGA SHOJI , HONDA TATSUYA
IPC分类号： H01L21/822 , H01L21/66 , H01L27/04 , H01L29/786
CPC分类号： H01L22/20 , H01L22/14
摘要： PROBLEM TO BE SOLVED: To provide a novel method of evaluating an oxide semiconductor since principles of the oxide semiconductor are still unclear and therefore there are no established methods of evaluating an oxide semiconductor although many principles of a silicon semiconductor have been explained.
SOLUTION: By the evaluation method, the amount of carrier density is evaluated, and the amount of a hydrogen concentration is also evaluated. Specifically, a MOS capacitor (diode (A) or triode (B)) is manufactured, and the CV characteristics of the MOS capacitor are obtained. Then, the carrier density is estimated from the CV characteristics which are thus obtained.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种评价氧化物半导体的新方法，因为氧化物半导体的原理仍不清楚，因此虽然已经说明了硅半导体的许多原理，但是没有建立氧化物半导体的评估方法。解决方案：通过评估方法评估载体密度的量，并且还评估氢浓度的量。具体来说，制造MOS电容器（二极管（A）或三极管（B）），获得MOS电容器的CV特性。然后，根据所获得的CV特性来估计载流子密度。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011119706A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011119706A
公开(公告)日：2011-06-16
申请号：JP2010243369
申请日：2010-10-29
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MIYANAGA SHOJI , TAKAHASHI MASAHIRO , KISHIDA HIDEYUKI , SAKATA JUNICHIRO
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/20 , H01L21/336 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/42364 , H01L29/42384 , H01L29/518 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor having stable electric characteristics. SOLUTION: An insulating layer including many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer such as hydrogen or moisture (hydrogen atom or compound including hydrogen atom such as H 2 O) are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer including defects, thus reducing the impurity concentration in the oxide semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用具有稳定电特性的氧化物半导体的半导体器件。解决方案：在氧化物半导体层上形成具有以悬挂键为代表的许多缺陷的绝缘层，其中介于其间的氧过剩混合区或氧过剩氧化物绝缘层，由此氧化物半导体层中的杂质如氢或水分（氢原子或包括氢原子的化合物如H 2 SBO 2）通过氧过剩混合区或氧 - 过量氧化物绝缘层移动并扩散到包括缺陷的绝缘层中，从而减少氧化物半导体层中的杂质浓度。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2011109032A Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：JP2011109032A
公开(公告)日：2011-06-02
申请号：JP2009265407
申请日：2009-11-20
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： MIYANAGA SHOJI , SAKATA JUNICHIRO , SAKAKURA MASAYUKI , TAKAHASHI MASAHIRO , KISHIDA HIDEYUKI , YAMAZAKI SHUNPEI
IPC分类号： H01L29/786 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor using an oxide semiconductor favorable in electric characteristics. SOLUTION: The thin film transistor has a structure including a gate electrode 20 formed on a substrate 10, a gate insulating film 30 on the gate electrode 20, an oxide semiconductor film 40 on the gate electrode 20 and the gate insulating film 30, and a metal film 70 on the oxide semiconductor film 40, wherein the oxide semiconductor film 40 has a region 50 (a high metal concentration region 50) higher in metal concentration than other regions of the oxide semiconductor film 40 on an interface with the metal film 70. A metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal in the high metal concentration region 50. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用有利于电特性的氧化物半导体的薄膜晶体管。解决方案：薄膜晶体管具有包括形成在基板10上的栅电极20，栅电极20上的栅极绝缘膜30，栅电极20上的氧化物半导体膜40和栅极绝缘膜30的结构和氧化物半导体膜40上的金属膜70，其中氧化物半导体膜40具有金属浓度高于与金属的界面上的氧化物半导体膜40的其它区域的区域50（高金属浓度区域50）包含在氧化物半导体膜中的金属可以作为高金属浓度区域50中的晶粒或微晶体存在。版权所有（C）2011，JPO＆INPIT

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