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1. 发明授权

US06549393B2 Semiconductor wafer processing apparatus and method 失效
标题翻译：半导体晶片加工装置及方法
公开(公告)号：US06549393B2
公开(公告)日：2003-04-15
申请号：US09946615
申请日：2001-09-06
申请人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburo Kanai , Ken Yoshioka
发明人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburo Kanai , Ken Yoshioka
IPC分类号： H02N1300
CPC分类号： H01L21/67109 , H01J2237/2001
摘要： A wafer stage 2 for holding a semiconductor wafer in a plasma treatment apparatus by setting the wafer on the wafer stage, said wafer stage 2 comprising a base material 26 equipped with refrigerant flow paths for allowing a refrigerant for temperature adjustment to flow; a stress-reducing member 28 provided on the wafer setting side of said base material 26 and having a smaller thermal expansion coefficient than does said base material; a dielectric film 30 provided on the wafer setting side of said stress-reducing member; and a deflection-preventing member 29 provided on the wafer non-setting side of said base material and having a smaller thermal expansion coefficient than does said base material. When the wafer stage is used, the temperature of the wafer as a substrate to be processed can be controlled uniformly and very accurately.
摘要翻译：晶片载物台2，用于通过将晶片放置在晶片台上，将半导体晶片保持在等离子体处理装置中，所述晶片台2包括配备有制冷剂流路的基材26，所述制冷剂流路用于使用于温度调节的制冷剂流动; 设置在所述基材26的晶片固定侧并且具有比所述基材更小的热膨胀系数的应力减小构件28; 设置在所述减压构件的晶片固定侧的电介质膜30; 以及设置在所述基材的晶片非凝固侧并且具有比所述基材更小的热膨胀系数的防偏转构件29。当使用晶片台时，可以均匀且非常精确地控制作为被处理基板的晶片的温度。

2. 发明授权

US06677167B2 Wafer processing apparatus and a wafer stage and a wafer processing method 失效
标题翻译：晶片处理装置和晶片台以及晶片处理方法
公开(公告)号：US06677167B2
公开(公告)日：2004-01-13
申请号：US10086722
申请日：2002-03-04
申请人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburou Kanai , Toshio Masuda
发明人： Seiichiro Kanno , Hironobu Kawahara , Mitsuru Suehiro , Saburou Kanai , Toshio Masuda
IPC分类号： H01L2166
CPC分类号： H01L21/67109
摘要： A wafer processing apparatus comprising a wafer stage, wherein a semiconductor wafer is mounted on the wafer stage so as to process the semiconductor wafer, wherein a holding mechanism of the wafer stage is commonly used for a plurality of wafer stages, and accordingly, the wafer stage can be changed into a wafer stage having a different function so as to process the semiconductor wafer.
摘要翻译：一种晶片处理装置，包括晶圆台，其中半导体晶片安装在晶片台上以便处理半导体晶片，其中晶片台的保持机构通常用于多个晶片台，因此，晶片可以将阶段改变为具有不同功能的晶片台，以便处理半导体晶片。

3. 发明授权

US06815365B2 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US06815365B2
公开(公告)日：2004-11-09
申请号：US09983946
申请日：2001-10-26
申请人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
发明人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.
摘要翻译：一种用于蚀刻在具有侧壁的蚀刻室内的样品的等离子体蚀刻方法，保持在侧壁内侧的可更换夹套，以及靠近可更换护套顶端的加热机构，用于产生朝向蚀刻内部辐射的热量房间。等离子体蚀刻方法还包括通过抽气系统对蚀刻室进行排气的步骤，向蚀刻室供给蚀刻气体的步骤，产生用于在蚀刻室中进行蚀刻的等离子体的工序，以及工序在产生等离子体的步骤的初始阶段期间通过加热机构进行加热操作。

4. 发明授权

US06171438B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06171438B2
公开(公告)日：2001-01-09
申请号：US09227332
申请日：1999-01-08
申请人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
发明人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
IPC分类号： C23C1600
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma etching apparatus including a vacuum processing chamber, a plasma generation device, a processing gas supply for supplying processing gas to the processing chamber, an electrode for holding a sample to be processed in the vacuum processing chamber, and an evacuation system for reducing the pressure of the vacuum processing chamber. The processing gas includes at least one kind of gas having a composition for forming a polymerized film by plasma discharge, wherein the processing gas is made plasmatic by plasma discharge in the processing chamber. At least one surface of an inner wall surface of the processing chamber in contact with plasma in the processing chamber and a surface of an internal component part is controlled to a predetermined temperature which is lower than the temperature of the sample to be processed and a strong polymerized film is formed on the inner wall surface of the processing chamber.
摘要翻译：一种等离子体蚀刻装置，包括真空处理室，等离子体产生装置，用于向处理室供应处理气体的处理气体供应源，用于保持真空处理室中待处理样品的电极和用于减少处理气体的排气系统真空处理室的压力。处理气体包括至少一种具有通过等离子体放电形成聚合膜的组成的气体，其中处理气体通过在处理室中的等离子体放电而制成。与处理室中的等离子体接触的处理室的内壁表面的至少一个表面和内部部件的表面被控制到比待处理样品的温度低的预定温度，并且强聚合膜形成在处理室的内壁表面上。

5. 发明申请

US20050236109A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20050236109A1
公开(公告)日：2005-10-27
申请号：US11156477
申请日：2005-06-21
申请人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
发明人： Toshio Masuda , Kazue Takahashi , Mitsuru Suehiro , Tetsunori Kaji , Saburo Kanai
IPC分类号： C23F1/00 , H01J37/32
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022
摘要： A plasma processing apparatus includes a vacuum processing chamber, a plasma generating unit having a first power source, a gas supply unit, a lower electrode having a sample table surface for holding a sample in the vacuum processing chamber, and a vacuum pumping unit. The apparatus further includes a plate disposed at a position opposed to the sample table surface, a disc electricity conductor disposed in contact with the plate, a second power source for applying an RF frequency bias power to the disc electricity conductor, and a unit for controlling a temperature of the plate to a predetermined value. The plate is made of silicon or carbon at high purity, and the disc electricity conductor and the plate have a plurality of holes for introducing processing gas from the gas supply unit into the vacuum processing chamber.
摘要翻译：等离子体处理装置包括真空处理室，具有第一电源的等离子体产生单元，气体供给单元，具有用于将样品保持在真空处理室中的样品台表面的下部电极和真空泵送单元。该设备还包括设置在与样品台表面相对的位置处的板，与板接触设置的盘导电体，用于向盘导电体施加RF频率偏置功率的第二电源，以及用于控制板的温度达到预定值。该板由高纯度的硅或碳制成，盘导电体和板具有多个孔，用于将来自气体供应单元的处理气体引入真空处理室。

6. 发明授权

US06537012B2 Vacuum processing apparatus and a vacuum processing system 失效
公开(公告)号：US06537012B2
公开(公告)日：2003-03-25
申请号：US10086709
申请日：2002-03-04
申请人： Hironobu Kawahara , Mitsuru Suehiro , Kazue Takahashi , Hideyuki Yamamoto , Katsuya Watanabe
发明人： Hironobu Kawahara , Mitsuru Suehiro , Kazue Takahashi , Hideyuki Yamamoto , Katsuya Watanabe
IPC分类号： H01L213065
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67196 , H01L21/67201 , H01L21/67207 , Y10S414/135 , Y10S414/139
摘要： The vacuum processing apparatus has an atmospheric loader having a plurality of cassette tables and a transport unit for carrying wafers, a vacuum loader equipped with vacuum wafer-processing chambers and a vacuum transport chamber communicating with the processing chambers via gate valves, and a locking unit provided with a loading lock chamber and unloading lock chambers that have gate valves for connecting the atmospheric transport unit and vacuum transport chamber; wherein two etching chambers, formed by UHF-ECR reactors, are arranged symmetrically with respect to an axial line passing through the middle of the vacuum transport chamber and locking unit, only at the opposite side of the locking unit across the vacuum transport chamber, and at an acute angle with respect to the vacuum transport chamber, and UHF-ECR antennas, almost parallel to the foregoing axial line, are opened at the opposite side to that of the vacuum transport chamber.

7. 发明授权

US06558100B1 Vacuum processing apparatus and a vacuum processing system 失效
公开(公告)号：US06558100B1
公开(公告)日：2003-05-06
申请号：US09697324
申请日：2000-10-27
申请人： Hironobu Kawahara , Mitsuru Suehiro , Kazue Takahashi , Hideyuki Yamamoto , Katsuya Watanabe
发明人： Hironobu Kawahara , Mitsuru Suehiro , Kazue Takahashi , Hideyuki Yamamoto , Katsuya Watanabe
IPC分类号： H01L213065
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67196 , H01L21/67201 , H01L21/67207 , Y10S414/135 , Y10S414/139
摘要： The vacuum processing apparatus has an atmospheric loader having a plurality of cassette tables and a transport unit for carrying wafers, a vacuum loader equipped with vacuum wafer-processing chambers and a vacuum transport chamber communicating with the processing chambers via gate valves, and a locking unit provided with a loading lock chamber and unloading lock chambers that have gate valves for connecting the atmospheric transport unit and vacuum transport chamber; wherein two etching chambers, formed by UHF-ECR reactors, are arranged symmetrically with respect to an axial line passing through the middle of the vacuum transport chamber and locking unit, only at the opposite side of the locking unit across the vacuum transport chamber, and at an acute angle with respect to the vacuum transport chamber, and UHF-ECR antennas, almost parallel to the foregoing axial line, are opened at the opposite side to that of the vacuum transport chamber.

8. 发明授权

US07686917B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US07686917B2
公开(公告)日：2010-03-30
申请号：US11780014
申请日：2007-07-19
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.
摘要翻译：等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光通过通孔。光发射器相对于板的后表面独立地可拆卸。

9. 发明授权

US06923885B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US06923885B2
公开(公告)日：2005-08-02
申请号：US10732286
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.
摘要翻译：一种等离子体处理装置，其具有位于真空室中的样品台，设置在与放置在样品台上的样品相对的位置并且面对在真空室中产生的等离子体的结构，以及设置在该结构中的至少一个通孔气体通过该气体流入真空室。光传输器安装在所述至少一个通孔的背面上，来自所述样品的光通过所述至少一个通孔穿过，所述光通过所述光发射器检测。

10. 发明授权

US07169254B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US07169254B2
公开(公告)日：2007-01-30
申请号：US10732285
申请日：2003-12-11
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.
摘要翻译：一种等离子体处理装置，其具有设置在真空室内的样品台和与放置在样品台上并提供电力的样品相对设置的板构件。使用在样品台和板构件之间产生的等离子体处理样品，并且测量端口设置在板构件的后侧。测量端口包括从样品表面接收光的光发射器，以及在真空室的大气侧和真空侧之间进行真空密封的密封件。

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