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1. 发明授权

US5869876A Semiconductor strain sensor 失效
标题翻译：半导体应变传感器
公开(公告)号：US5869876A
公开(公告)日：1999-02-09
申请号：US788169
申请日：1997-01-24
申请人： Seiichiro Ishio , Kenichi Ao , Hiroshige Sugito
发明人： Seiichiro Ishio , Kenichi Ao , Hiroshige Sugito
IPC分类号： G01P15/08 , G01P15/12 , H01L29/84 , H01L29/82 , H01L27/20
CPC分类号： G01P15/0802 , G01P15/124 , H01L29/84 , G01P2015/0814
摘要： A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.
摘要翻译：半导体应变传感器在由p型隔离区域包围的p型衬底上具有到达p型衬底的量规形成区域。蚀刻p型基板，使得量规形成区域的整个底面被p型基板覆盖，并且p型基板或p型隔离区域不暴露于蚀刻的凹部或隔离槽，每个都具有相对较多数量的缺陷。因此，可以减小PN结处的漏电流，以减小量规形成区域的电位变化。

2. 发明授权

US6151966A Semiconductor dynamical quantity sensor device having electrodes in Rahmen structure 有权
标题翻译：具有Rahmen结构的电极的半导体动力传感器装置
公开(公告)号：US6151966A
公开(公告)日：2000-11-28
申请号：US304849
申请日：1999-05-05
申请人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
发明人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.
摘要翻译：通过微加工在SOI衬底上形成半导体加速度计装置。可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。可动电极与配重部一体地形成为梳形。一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。这种结构减小了每个电极的重量，同时增加了抗扭力的强度。由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

3. 发明授权

US6130010A Method for producing a semiconductor dynamic sensor using an anisotropic etching mask 失效
标题翻译：使用各向异性蚀刻掩模制造半导体动态传感器的方法
公开(公告)号：US6130010A
公开(公告)日：2000-10-10
申请号：US772993
申请日：1996-12-23
申请人： Seiichiro Ishio , Kenichi Ao
发明人： Seiichiro Ishio , Kenichi Ao
IPC分类号： G01L1/18 , B81C1/00 , G01P15/08 , G01P15/12 , H01L21/033 , H01L21/306 , H01L29/84 , G03F9/00
CPC分类号： B81C1/0042 , G01P15/0802 , G01P15/123 , H01L21/0334 , G01P2015/084
摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the [011] direction of the silicon substrate, and the other side stretches in the [011] direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a non-etched portion corresponding to the main portion of the mask.
摘要翻译：在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。每个形状补偿部分具有长边和短边的矩形形状。此外，蚀刻掩模的长边和短边之一在硅衬底的[011]方向上延伸，另一侧在硅衬底的[0 + E，ov1 + EE1]方向上延伸。结果，可以在对应于掩模的主要部分的未蚀刻部分上形成大的角落底切部分，将硅衬底蚀刻成预定形状。

4. 发明授权

US06448624B1 Semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器
公开(公告)号：US06448624B1
公开(公告)日：2002-09-10
申请号：US08908939
申请日：1997-08-08
申请人： Seiichiro Ishio , Kenichi Ao , Minoru Murata , Yasuki Shimoyama , Tomohito Kunda , Norio Kitao
发明人： Seiichiro Ishio , Kenichi Ao , Minoru Murata , Yasuki Shimoyama , Tomohito Kunda , Norio Kitao
IPC分类号： H01L2982
CPC分类号： G01P15/123 , G01P1/006 , G01P15/0802 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor sensor chip is provided with a weight portion supported in a frame via beams whereby acceleration up to substantially ±1 G can be detected by utilizing piezoresistance effect of resistor elements formed on the beams. The semiconductor sensor chip is supported by a seat having a thermal expansion coefficient equivalent to that of the semiconductor sensor chip via the frame. The frame and the seat are adhered to each other by a flexible adhesive agent mixed with a plurality of resin beads functioning as spacers and under an adhesion state, air damping of the weight portion is carried out by setting a dimension of an air gap between the weight portion and the seat to a range of 7 through 15 &mgr;m.
摘要翻译：半导体传感器芯片具有通过光束支撑在框架中的重量部分，由此通过利用形成在梁上的电阻元件的压阻效应可以检测到大致±1G的加速度。半导体传感器芯片由具有与半导体传感器芯片的热膨胀系数相当的热膨胀系数经由框架支撑。框架和座椅通过与作为间隔件起作用的多个树脂珠混合的柔性粘合剂彼此粘合，并且在粘合状态下，通过将重量部分的空气阻力设定在重量部分和座椅到7到15毫米的范围。

5. 发明授权

US06270685B1 Method for producing a semiconductor 有权
标题翻译：半导体制造方法
公开(公告)号：US06270685B1
公开(公告)日：2001-08-07
申请号：US09436358
申请日：1999-11-09
申请人： Seiichiro Ishio , Kenichi Ao
发明人： Seiichiro Ishio , Kenichi Ao
IPC分类号： C23F100
CPC分类号： B81C1/0042 , G01P15/0802 , G01P15/123 , G01P2015/084 , H01L21/0334
摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the direction of the silicon substrate, and the other side stretches in the direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a nonetched portion corresponding to the main portion of the mask.
摘要翻译：在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。每个形状补偿部分具有长边和短边的矩形形状。此外，蚀刻掩模的长边和短边之一在硅衬底的<011>方向上延伸，另一侧在硅衬底的<0（超芯（1）} 1>方向上延伸。结果，可以将硅衬底蚀刻成预定形状，而不会在对应于掩模的主要部分的非蚀刻部分上形成大的拐角切口部分。

6. 发明授权

US6143584A Method for fabrication of a semiconductor sensor 失效
标题翻译：半导体传感器的制造方法
公开(公告)号：US6143584A
公开(公告)日：2000-11-07
申请号：US121893
申请日：1998-07-24
申请人： Tsuyoshi Fukada , Masakazu Kanosue , Kenichi Ao , Minoru Murata , Seiichiro Ishio
发明人： Tsuyoshi Fukada , Masakazu Kanosue , Kenichi Ao , Minoru Murata , Seiichiro Ishio
IPC分类号： G01P15/12 , H01L21/00
CPC分类号： G01P15/123 , G01P15/124
摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.
摘要翻译：半导体传感器具有量规电阻。量规电阻器通过接触孔与铝电极连接，形成桥接电路。在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。然后，测量电阻的电阻或桥接电路的输出。基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

7. 发明授权

US6065341A Semiconductor physical quantity sensor with stopper portion 有权
标题翻译：具有止动部分的半导体物理量传感器
公开(公告)号：US6065341A
公开(公告)日：2000-05-23
申请号：US209414
申请日：1998-12-11
申请人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
发明人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125
CPC分类号： B81B3/0051 , G01P15/0802 , G01P15/125 , B81B2201/0235 , G01P2015/0814
摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.
摘要翻译：可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。止动部分通过锚定部电连接到梁部分。因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。

8. 发明申请

US20110271758A1 ANGULAR VELOCITY SENSOR 有权
标题翻译：角速度传感器
公开(公告)号：US20110271758A1
公开(公告)日：2011-11-10
申请号：US13093328
申请日：2011-04-25
申请人： Minekazu SAKAI , Kenichi Ao
发明人： Minekazu SAKAI , Kenichi Ao
IPC分类号： G01C19/56
CPC分类号： G01C19/5747
摘要： In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.
摘要翻译：在角速度传感器中，梁部分将一对振动器彼此连接并将每个振动器耦合到基板，以使得一对振动器能够在彼此垂直的第一方向和第二方向上移动。驱动部分在第一方向上以相反的相位振动一对振动器。检测部分检测一对振动器在第二方向上的位移，作为电容的变化。检测部分包括第一和第二检测电极。限制部分基于电容的变化来限制一对振动器在第二方向上的位移。限制部分包括第一和第二限制电极，并且限制电极之间的电极间隔是第二方向上检测电极宽度的两倍。

9. 发明授权

US06906394B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06906394B2
公开(公告)日：2005-06-14
申请号：US10448277
申请日：2003-05-30
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： G01P15/125 , B81B3/00 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L29/84 , H01L27/01
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

10. 发明授权

US06429506B1 Semiconductor device produced by dicing 有权
标题翻译：通过切割生产的半导体器件
公开(公告)号：US06429506B1
公开(公告)日：2002-08-06
申请号：US09525514
申请日：2000-03-15
申请人： Tetsuo Fujii , Tsuyoshi Fukada , Hiroshi Muto , Kenichi Ao , Shinji Yoshihara , Sumitomo Inomata
发明人： Tetsuo Fujii , Tsuyoshi Fukada , Hiroshi Muto , Kenichi Ao , Shinji Yoshihara , Sumitomo Inomata
IPC分类号： H01L21301
CPC分类号： H01L21/6836 , B29C33/0022 , B29C2043/023 , B81C1/00888 , B81C1/00896 , B81C2201/053 , H01L2221/68327 , H01L2224/16 , H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48465 , H01L2224/73265 , H01L2924/01057 , H01L2924/01068 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/16235 , H01L2924/30105 , H01L2924/00 , H01L2924/00014
摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
摘要翻译：将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

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