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1. 发明申请

US20070114458A1 Apparatus for manufacturing semiconductor substrates 有权
标题翻译：半导体基板的制造装置
公开(公告)号：US20070114458A1
公开(公告)日：2007-05-24
申请号：US11510277
申请日：2006-08-24
申请人： Seiichi Nakamura , Hideki Nishihata , Riyunsuke Kasamatsu , Kazunori Tsubuku , Akira Bando , Nobuo Tsumaki , Tomoji Watanabe , Kazuo Mera , Tsuneo Hayashi , Yoichi Kurosawa
发明人： Seiichi Nakamura , Hideki Nishihata , Riyunsuke Kasamatsu , Kazunori Tsubuku , Akira Bando , Nobuo Tsumaki , Tomoji Watanabe , Kazuo Mera , Tsuneo Hayashi , Yoichi Kurosawa
IPC分类号： H01J37/08
CPC分类号： H01J37/3172 , H01J37/20 , H01J2237/2007 , H01L21/68728 , H01L21/68764 , H01L21/68771
摘要： This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.
摘要翻译：该半导体基板的制造装置具有在支撑盘上保持半导体基板的支撑盘和保持单元。保持单元具有由导电材料形成并保持半导体衬底的边缘的止动件，在其外圆周部分处支撑止动件的止动器保持器，将止动件保持在支撑盘上的保持构件，加热装置加热塞子。

2. 发明授权

US07485874B2 Apparatus for manufacturing semiconductor substrates 有权
标题翻译：半导体基板的制造装置
公开(公告)号：US07485874B2
公开(公告)日：2009-02-03
申请号：US11510277
申请日：2006-08-24
申请人： Seiichi Nakamura , Hideki Nishihata , Riyuusuke Kasamatsu , Kazunori Tsubuku , Akira Bando , Nobuo Tsumaki , Tomoji Watanabe , Kazuo Mera , Tsuneo Hayashi , Yoichi Kurosawa
发明人： Seiichi Nakamura , Hideki Nishihata , Riyuusuke Kasamatsu , Kazunori Tsubuku , Akira Bando , Nobuo Tsumaki , Tomoji Watanabe , Kazuo Mera , Tsuneo Hayashi , Yoichi Kurosawa
IPC分类号： G01N21/00 , G01N23/00 , G21K5/10 , G21K5/08 , H01J37/08 , H01J37/20
CPC分类号： H01J37/3172 , H01J37/20 , H01J2237/2007 , H01L21/68728 , H01L21/68764 , H01L21/68771
摘要： This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.
摘要翻译：该半导体基板的制造装置具有在支撑盘上保持半导体基板的支撑盘和保持单元。保持单元具有由导电材料形成并保持半导体衬底的边缘的止动件，在其外圆周部分处支撑止动件的止动器保持器，将止动件保持在支撑盘上的保持构件，加热装置加热塞子。

3. 发明授权

US07410877B2 Method for manufacturing SIMOX wafer and SIMOX wafer 失效
标题翻译：制造SIMOX晶圆和SIMOX晶圆的方法
公开(公告)号：US07410877B2
公开(公告)日：2008-08-12
申请号：US11471750
申请日：2006-06-20
申请人： Yoshiro Aoki , Riyuusuke Kasamatsu , Hideki Nishihata , Seiichi Nakamura
发明人： Yoshiro Aoki , Riyuusuke Kasamatsu , Hideki Nishihata , Seiichi Nakamura
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/76243
摘要： A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form an amorphous layer; and heat-treating the silicon wafer to form a buried oxide layer, wherein in the forming of the amorphous layer, the implantation of oxygen ions is carried out after preheating the silicon wafer to a temperature lower than the heating temperature of the forming of the high oxygen concentration layer. Alternatively, the method for manufacturing a SIMOX wafer includes: in the formation of the high oxygen concentration layer, implanting oxygen ions while heating a silicon wafer at a temperature of 300° C. or more; and in the formation of the amorphous layer, implanting oxygen ions after preheating the silicon wafer to a temperature of less than 300° C.
摘要翻译：一种制造SIMOX晶片的方法包括：加热硅晶片，注入氧离子以形成高氧浓度层; 将氧离子注入通过形成高氧浓度层获得的硅晶片中以形成非晶层; 并对硅晶片进行热处理以形成掩埋氧化物层，其中在形成非晶层时，在将硅晶片预热到低于形成高温的加热温度的温度之后，进行氧离子的注入氧浓度层。或者，制造SIMOX晶片的方法包括：在高氧浓度层的形成中，在300℃以上的温度下加热硅晶片时，注入氧离子; 并且在形成非晶层时，将硅晶片预热后的氧离子注入到低于300℃的温度。

4. 发明申请

US20070020949A1 Method for manufacturing SIMOX wafer and SIMOX wafer 失效
标题翻译：制造SIMOX晶圆和SIMOX晶圆的方法
公开(公告)号：US20070020949A1
公开(公告)日：2007-01-25
申请号：US11471750
申请日：2006-06-20
申请人： Yoshiro Aoki , Riyuusuke Kasamatsu , Hideki Nishihata , Seiichi Nakamura
发明人： Yoshiro Aoki , Riyuusuke Kasamatsu , Hideki Nishihata , Seiichi Nakamura
IPC分类号： H01L21/31 , H01L21/425 , H01L21/469
CPC分类号： H01L21/76243
摘要： One embodiment of this method for manufacturing a SIMOX wafer includes: while heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer so as to form an amorphous layer; and heat-treating the silicon wafer obtained by the forming of the amorphous layer so as to form a buried oxide layer, wherein in the forming of the amorphous layer, the implantation of oxygen ions is carried out after preheating the silicon wafer to a temperature lower than the heating temperature of the forming of the high oxygen concentration layer. Another embodiment of this method for manufacturing a SIMOX wafer includes: in the above forming of the high oxygen concentration layer, implanting oxygen ions while heating a silicon wafer at a temperature of 300° C. or more; and in the above forming of the amorphous layer, implanting oxygen ions after preheating the silicon wafer to a temperature of less than 300° C.
摘要翻译：用于制造SIMOX晶片的该方法的一个实施例包括：在加热硅晶片的同时，注入氧离子以形成高氧浓度层; 将氧离子注入到通过形成高氧浓度层而获得的硅晶片中以形成非晶层; 对通过形成非晶层而获得的硅晶片进行热处理，以形成掩埋氧化物层，其中在形成非晶层时，在将硅晶片预热到较低温度之后，进行氧离子的注入比形成高氧浓度层的加热温度高。该SIMOX晶片的制造方法的另一个实施例包括：在上述高氧浓度层的形成中，在300℃以上的温度下加热硅晶片时，注入氧离子; 并且在上述非晶层的形成中，将硅晶片预热后的氧离子注入到低于300℃的温度。

5. 发明授权

US07858494B2 Laminated substrate manufacturing method and laminated substrate manufactured by the method 有权
标题翻译：层叠基板的制造方法和通过该方法制造的层压基板
公开(公告)号：US07858494B2
公开(公告)日：2010-12-28
申请号：US11466964
申请日：2006-08-24
申请人： Akihiko Endo , Hideki Nishihata , Nobuyuki Morimoto
发明人： Akihiko Endo , Hideki Nishihata , Nobuyuki Morimoto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/762 , H01L21/76254 , H01L21/76256 , H01L27/1203
摘要： Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an active layer, on a second semiconductor substrate 12, which is to be a supporting substrate, via an oxide film 11a. Electric resistance of either or both of the first and second semiconductor substrates 11 and 12 before superimposition is 0.005-0.2 Ωcm.
摘要翻译：在层叠基板制造过程中由于静电积聚引起的颗粒的粘附受到限制，从而减少层压步骤中的空隙或泡罩的产生并提高产量。通过将作为有源层的第一半导体基板11经由氧化膜11a叠加在作为支撑基板的第二半导体基板12上而形成层叠体13。叠加之前的第一和第二半导体基板11和12中的任一个或两者的电阻为0.005-0.2Ω·cm。

6. 发明申请

US20100178750A1 METHOD FOR PRODUCING BONDED WAFER 审中-公开
标题翻译：生产粘结波的方法
公开(公告)号：US20100178750A1
公开(公告)日：2010-07-15
申请号：US12503784
申请日：2009-07-15
申请人： Satoshi Murakami , Akihiko Endo , Nobuyuki Morimoto , Hideki Nishihata
发明人： Satoshi Murakami , Akihiko Endo , Nobuyuki Morimoto , Hideki Nishihata
IPC分类号： H01L21/18
CPC分类号： H01L21/76254 , H01L21/76256
摘要： A bonded wafer is produced by removing a part or all of native oxide films formed on each surface of both a wafer for active layer and a wafer for support substrate to be bonded; forming a uniform oxide film with a thickness of less than 5 nm on at least one surface of these wafers by a given oxide film forming method; bonding the wafer for active layer to the wafer for support substrate through the uniform oxide film; thinning the wafer for active layer; and subjecting the bonded wafer to a given heat treatment in a non-oxidizing atmosphere to substantially remove the uniform oxide film existing in the bonding interface.
摘要翻译：通过去除在有源层的晶片和待接合的支撑基板的晶片的每个表面上形成的一部分或全部自然氧化膜来制造键合晶片; 通过给定的氧化膜形成方法在这些晶片的至少一个表面上形成厚度小于5nm的均匀氧化物膜; 通过均匀的氧化膜将用于有源层的晶片结合到用于支撑衬底的晶片; 减薄晶圆的活性层; 并且在非氧化性气氛中使接合晶片进行给定的热处理，以基本上除去存在于接合界面中的均匀氧化膜。

7. 发明授权

US07713842B2 Method for producing bonded wafer 失效
标题翻译：接合晶片的制造方法
公开(公告)号：US07713842B2
公开(公告)日：2010-05-11
申请号：US12286344
申请日：2008-09-29
申请人： Hideki Nishihata , Isoroku Ono , Akihiko Endo
发明人： Hideki Nishihata , Isoroku Ono , Akihiko Endo
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76256
摘要： In a method for producing a bonded wafer by bonding a wafer for active layer to wafer for support layer and then thinning the wafer for active layer, a terrace grinding for forming a terrace portion is carried out prior to a step of exposing the oxygen ion implanted layer to thereby leave an oxide film on a terrace portion of the wafer for support layer.
摘要翻译：在通过将用于有源层的晶片接合到用于支撑层的晶片上然后使用于有源层的晶片变薄的方法来生产接合晶片的方法中，在暴露氧离子注入的步骤之前，进行用于形成露台部分的露台研磨从而在用于支撑层的晶片的平台部分上留下氧化膜。

8. 发明授权

US07563697B2 Method for producing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US07563697B2
公开(公告)日：2009-07-21
申请号：US10570353
申请日：2004-09-03
申请人： Nobuyuki Morimoto , Hideki Nishihata
发明人： Nobuyuki Morimoto , Hideki Nishihata
IPC分类号： H01L21/322
CPC分类号： H01L21/3247 , H01L21/76254
摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.
摘要翻译：通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。随后，将由此获得的SOI晶片在氩气气氛中进行热处理。之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。因此，SOI晶片的表面被再结晶，从而平坦化。

9. 发明申请

US20090098707A1 Method for producing bonded wafer 失效
标题翻译：接合晶片的制造方法
公开(公告)号：US20090098707A1
公开(公告)日：2009-04-16
申请号：US12286344
申请日：2008-09-29
申请人： Hideki Nishihata , Isoroku Ono , Akihiko Endo
发明人： Hideki Nishihata , Isoroku Ono , Akihiko Endo
IPC分类号： H01L21/46
CPC分类号： H01L21/76256
摘要： In a method for producing a bonded wafer by bonding a wafer for active layer to wafer for support layer and then thinning the wafer for active layer, a terrace grinding for forming a terrace portion is carried out prior to a step of exposing the oxygen ion implanted layer to thereby leave an oxide film on a terrace portion of the wafer for support layer.
摘要翻译：在通过将用于有源层的晶片接合到用于支撑层的晶片上然后使用于有源层的晶片变薄的方法来生产接合晶片的方法中，在暴露氧离子注入的步骤之前，进行用于形成露台部分的露台研磨从而在用于支撑层的晶片的平台部分上留下氧化膜。

10. 发明申请

US20090023269A1 Method for producing soi wafer 有权
标题翻译：生产硅片的方法
公开(公告)号：US20090023269A1
公开(公告)日：2009-01-22
申请号：US10570353
申请日：2004-09-03
申请人： Nobuyuki Morimoto , Hideki Nishihata
发明人： Nobuyuki Morimoto , Hideki Nishihata
IPC分类号： H01L21/762
CPC分类号： H01L21/3247 , H01L21/76254
摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.
摘要翻译：通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。随后，将由此获得的SOI晶片在氩气气氛中进行热处理。之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。因此，SOI晶片的表面被再结晶，从而平坦化。

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