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1. 发明申请

US20100178750A1 METHOD FOR PRODUCING BONDED WAFER 审中-公开
标题翻译：生产粘结波的方法
公开(公告)号：US20100178750A1
公开(公告)日：2010-07-15
申请号：US12503784
申请日：2009-07-15
申请人： Satoshi Murakami , Akihiko Endo , Nobuyuki Morimoto , Hideki Nishihata
发明人： Satoshi Murakami , Akihiko Endo , Nobuyuki Morimoto , Hideki Nishihata
IPC分类号： H01L21/18
CPC分类号： H01L21/76254 , H01L21/76256
摘要： A bonded wafer is produced by removing a part or all of native oxide films formed on each surface of both a wafer for active layer and a wafer for support substrate to be bonded; forming a uniform oxide film with a thickness of less than 5 nm on at least one surface of these wafers by a given oxide film forming method; bonding the wafer for active layer to the wafer for support substrate through the uniform oxide film; thinning the wafer for active layer; and subjecting the bonded wafer to a given heat treatment in a non-oxidizing atmosphere to substantially remove the uniform oxide film existing in the bonding interface.
摘要翻译：通过去除在有源层的晶片和待接合的支撑基板的晶片的每个表面上形成的一部分或全部自然氧化膜来制造键合晶片; 通过给定的氧化膜形成方法在这些晶片的至少一个表面上形成厚度小于5nm的均匀氧化物膜; 通过均匀的氧化膜将用于有源层的晶片结合到用于支撑衬底的晶片; 减薄晶圆的活性层; 并且在非氧化性气氛中使接合晶片进行给定的热处理，以基本上除去存在于接合界面中的均匀氧化膜。

2. 发明授权

US07851337B2 Method for producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US07851337B2
公开(公告)日：2010-12-14
申请号：US11801461
申请日：2007-05-09
申请人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/425
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上，活性层晶片在氢离子注入层处被剥离。

3. 发明授权

US07795117B2 Method of producing semiconductor substrate having an SOI structure 有权
标题翻译：制造具有SOI结构的半导体衬底的方法
公开(公告)号：US07795117B2
公开(公告)日：2010-09-14
申请号：US11796005
申请日：2007-04-25
申请人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/322 , H01L21/301
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

4. 发明申请

US20090075453A1 METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：生产半导体基板的方法
公开(公告)号：US20090075453A1
公开(公告)日：2009-03-19
申请号：US12270753
申请日：2008-11-13
申请人： Satoshi MURAKAMI , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi MURAKAMI , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

5. 发明申请

US20110027969A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE 有权
标题翻译：生产半导体基板的方法
公开(公告)号：US20110027969A1
公开(公告)日：2011-02-03
申请号：US12903139
申请日：2010-10-12
申请人： Satoshi MURAKAMI , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi MURAKAMI , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上，活性层晶片在氢离子注入层处被剥离。

6. 发明申请

US20070264797A1 Method for producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20070264797A1
公开(公告)日：2007-11-15
申请号：US11801461
申请日：2007-05-09
申请人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上，活性层晶片在氢离子注入层处被剥离。

7. 发明授权

US08183133B2 Method for producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08183133B2
公开(公告)日：2012-05-22
申请号：US12903139
申请日：2010-10-12
申请人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/425
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上，活性层晶片在氢离子注入层处被剥离。

8. 发明授权

US07951692B2 Method of producing semiconductor substrate having an SOI structure 有权
标题翻译：制造具有SOI结构的半导体衬底的方法
公开(公告)号：US07951692B2
公开(公告)日：2011-05-31
申请号：US12270753
申请日：2008-11-13
申请人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/322 , H01L21/301
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

9. 发明申请

US20070275566A1 Method of producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US20070275566A1
公开(公告)日：2007-11-29
申请号：US11796005
申请日：2007-04-25
申请人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
发明人： Satoshi Murakami , Nobuyuki Morimoto , Hideki Nishihata , Akihiko Endo
IPC分类号： H01L21/31
CPC分类号： H01L21/76254
摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.
摘要翻译：提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

10. 发明申请

US20090117708A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090117708A1
公开(公告)日：2009-05-07
申请号：US11933882
申请日：2007-11-01
申请人： Hideki Nishihata , Nobuyuki Morimoto , Akihiko Endo
发明人： Hideki Nishihata , Nobuyuki Morimoto , Akihiko Endo
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method for manufacturing an SOI substrate includes steps of forming a first oxide film on a surface of a first silicon substrate; implanting hydrogen ions into the surface of the first silicon substrate on which the first oxide film is formed to form an ion implant region inside the first silicon substrate; removing the entire or the portion of first oxide film; forming a laminate by bonding the second silicon substrate to a hydrogen ion-implanted surface of the first silicon substrate with the first oxide film, or second oxide film formed on a surface of the second silicon substrate, or the first oxide film and second oxide film, interposed therebetween; and subjecting the laminate to a heat treatment at a predetermined temperature to separate the first silicon substrate along the ion implant region, thereby obtaining an SOI substrate including a thin SOI layer formed on the second silicon substrate with the oxide film interposed therebetween. The method can reduce a degree of contamination from heavy metals inside the SOI substrate.
摘要翻译： SOI衬底的制造方法包括在第一硅衬底的表面上形成第一氧化膜的步骤; 将氢离子注入到其上形成有第一氧化膜的第一硅衬底的表面中以在第一硅衬底内部形成离子注入区; 去除第一氧化膜的全部或部分; 通过将第二硅衬底与形成在第二硅衬底的表面上的第一氧化物膜或第二氧化物膜的第一硅衬底的氢离子注入表面接合，或者将第一氧化物膜和第二氧化物膜 ; 以及在预定温度下对层压体进行热处理以沿离子注入区分离第一硅衬底，从而获得SOI衬底，其包括在第二硅衬底上形成的薄SOI层，其间插入有氧化膜。该方法可以降低SOI衬底内重金属的污染程度。

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