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    • 4. 发明授权
    • Multiple species sputtering for improved bottom coverage and improved
sputter rate
    • 用于改善底部覆盖和改善溅射速率的多种溅射
    • US6083358A
    • 2000-07-04
    • US53354
    • 1998-04-01
    • P. J. IrelandHoward RhodesSujit SharanSukesh SandhuTim O'BrienTim Johnson
    • P. J. IrelandHoward RhodesSujit SharanSukesh SandhuTim O'BrienTim Johnson
    • C23C14/04C23C14/35H01L21/762H01L21/768C23C14/34
    • C23C14/35C23C14/046H01L21/762H01L21/76877
    • An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.
    • 改进的溅射工艺通过以低质量离子和高质量离子轰击靶,通过以低质量离子为主来增加溅射通量对目标表面的垂直度,用低质量和高质量注入离子填充目标,并引起目标原子喷出 作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。 一种替代的改进的溅射工艺用低和高质量离子轰击靶,以高质量离子为主,导致比单独使用高质量或低质量物质可实现的更高的溅射速率。 在任一过程中,作为高质量或低质量物质,具有比标准物质更低的电离能的物质允许减压等离子体,导致溅射通量的较少散射。 也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。
    • 6. 发明授权
    • Fluid jet PMR
    • 流体喷射PMR
    • US06544220B2
    • 2003-04-08
    • US09780698
    • 2001-02-14
    • Brandon J. ShumanTim JohnsonJoseph PearceZihong Guo
    • Brandon J. ShumanTim JohnsonJoseph PearceZihong Guo
    • A61M2900
    • A61B17/32037A61B2017/00247A61B2018/00392
    • A system for performing fluid jet myocardial revascularization includes a catheter having a proximal region, a distal region, a lumen extending therethrough and a valve disposed in the lumen for allowing the passage of fluids in the lumen to create holes in the myocardium. A valve control means extends through the proximal region of the catheter to open and close the valve. In one embodiment, the valve also includes a biasing mechanism for biasing the valve in a closed position. The valve may be controlled using an electrically actuated device that is heated with an electrical current to open and close the valve. In one embodiment of the invention, the catheter has a wall that can be expanded within a guide catheter to anchor the catheter during revascularization.
    • 用于进行流体射流心肌血运重建的系统包括具有近端区域,远端区域,延伸穿过其中的腔的导管和设置在内腔中的阀,用于允许腔内的流体通过以在心肌中产生孔。 阀控制装置延伸穿过导管的近端区域以打开和关闭阀。 在一个实施例中,阀还包括用于将阀偏置在关闭位置的偏置机构。 可以使用电动致动装置来控制阀,该电驱动装置用电流加热以打开和关闭阀。 在本发明的一个实施例中,导管具有可以在引导导管内扩张以在血运重建期间锚定导管的壁。
    • 8. 发明申请
    • PLASMA METHOD AND APPARATUS FOR RECOVERY OF PRECIOUS METALS
    • 用于回收重金属的等离子体方法和装置
    • US20110274580A1
    • 2011-11-10
    • US13130886
    • 2009-11-24
    • David DeeganTim Johnson
    • David DeeganTim Johnson
    • C22B1/00B22D11/14B22D45/00B22D23/00
    • C22B11/021C22B4/005C22B9/226C22B11/02C22B11/026Y02P10/214Y02P10/234
    • The present invention relates to a method, and apparatus for the recovery of precious metals. Accordingly, it provides a continuous process for obtaining a precious metal composition from a feedstock material, the process comprising the steps of: (i) heating a feedstock material in a plasma furnace to form an upper slag layer and a lower molten metal layer; (ii) removing the slag layer; (iii) removing the molten metal layer; (iv) allowing the removed molten metal layer to solidify; (v) fragmenting the solidified metal layer to form fragments; and (vi) recovering a precious metal composition from the fragments; wherein the feedstock material comprises a precious metal containing material and a collector metal, said collector metal being a metal or an alloy that is capable of forming a solid solution, an alloy or an intermetallic compound with one or more precious metals. This allows for high recovery yields of precious metals. The apparatus comprises a plasma furnace, a casting table enabling continuous casting of the molten metal pool to form a solidified sheet, a fragmentation device and a separation unit for recovering precious-metal-rich alloy from the sheet fragments.
    • 本发明涉及一种回收贵金属的方法和装置。 因此,其提供了从原料材料获得贵金属组合物的连续方法,该方法包括以下步骤:(i)在等离子体炉中加热原料以形成上熔渣层和下熔融金属层; (ii)除去渣层; (iii)去除熔融金属层; (iv)允许去除的熔融金属层固化; (v)使固化的金属层破碎以形成碎片; 和(vi)从碎片中回收贵金属组合物; 其中所述原料材料包含含贵金属的材料和集电器金属,所述集电极金属是能够形成固溶体,合金或金属间化合物与一种或多种贵金属的金属或合金。 这允许贵金属的高回收率。 该装置包括等离子体炉,能够连续铸造熔融金属池以形成固化片的铸造台,碎片装置和用于从片材片中回收富含金属的合金的分离单元。
    • 10. 发明授权
    • Multiple species sputtering method
    • 多种溅射法
    • US06398923B1
    • 2002-06-04
    • US09609441
    • 2000-07-03
    • P. J. IrelandHoward RhodesSujit SharanSukesh SandhuTim O'BrienTim Johnson
    • P. J. IrelandHoward RhodesSujit SharanSukesh SandhuTim O'BrienTim Johnson
    • C23C1434
    • C23C14/35C23C14/046H01L21/762H01L21/76877
    • An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.
    • 改进的溅射工艺通过以低质量离子和高质量离子轰击靶,通过以低质量离子为主来增加溅射通量对目标表面的垂直度,用低质量和高质量注入离子填充目标,并引起目标原子喷出 作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。 一种替代的改进的溅射工艺用低和高质量离子轰击靶,以高质量离子为主,导致比单独使用高质量或低质量物质可实现的更高的溅射速率。 在任一过程中,作为高质量或低质量物质,具有比标准物质更低的电离能的物质允许减压等离子体,导致溅射通量的较少散射。 也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。