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    • 3. 发明授权
    • Reactive red dyes containing monochlorotriazine and acetoxyethyl sulfone groups
    • 含有一氯三嗪和乙酰氧基乙基砜基团的活性红色染料
    • US06310187B1
    • 2001-10-30
    • US09646868
    • 2001-04-09
    • Sea Wha OhMyeong Nyeo KangSeung Rim ShinTae Kyung KimMi Kyoung Song
    • Sea Wha OhMyeong Nyeo KangSeung Rim ShinTae Kyung KimMi Kyoung Song
    • C09B6251
    • C09B62/4413
    • The present invention relates to a bifunctional red reactive dye and more particularly, to the bifunctional red reactive dye with monochlorotriazine and acetoxyethylsulfone as reactive groups expressed by formula (I), wherein, M is alkaline metal atom, which provides excellent combination of properties in that 1) the introduction of aminophenyl-&bgr;-acetoxyethylsulfone group to the dye may minimize the loss of dye, since its low solubility to water lessens the amount of the remaining solution during filtration, 2) an easier salting-out process requires a smaller amount of salt during the process so that the costs for the treatment of waste water may be significantly reduced, and 3) a better dyeing yield with enhanced substantivity and better brightness in color
    • 本发明涉及双功能红色反应性染料,更具体地说,涉及由式(I)表示的作为反应性基团的单氯三嗪和乙酰氧基乙基砜的双功能红色活性染料,其中M为碱金属原子,其中提供优异的性能组合 1)将氨基苯基-β-乙酰氧基乙基砜基团引入到染料中可以使染料的损失最小化,因为其对水的低溶解度可以减少过滤期间剩余溶液的量,2)更容易的盐析过程需要较少量的 在处理过程中可以显着降低处理废水的成本,并且3)更好的染色产量,增强的亲和性和更好的颜色亮度
    • 6. 发明授权
    • Reactive blue dyes containing monochlorotriazine and acetoxyethyl sulfone groups
    • 含有单氯三嗪和乙酰氧基乙基砜基团的活性蓝色染料
    • US06307033B1
    • 2001-10-23
    • US09646936
    • 2000-11-20
    • Sea Wha OhMyeong Nyeo KangTae Kyung Kim
    • Sea Wha OhMyeong Nyeo KangTae Kyung Kim
    • C09B3310
    • C09B62/4415
    • The present invention relates to a bifunctional blue reactive dye and more particularly, to the bifunctional blue reactive dye with monochlorotriazine and acetoxyethylsulfone as reactive groups expressed by formula (1), wherein, M is alkaline metal atom, and which provides excellent combination of properties in that 1) the introduction of aminophenyl-&bgr;-acetoxyethylsulfone group to the dye may minimize the loss of dye, since its low solubility to water lessens the amount of the remaining solution during filtration, 2) an easier salting-out process requires a smaller amount of salt during the process so that the costs for the treatment of waste water may be significantly reduced, and 3) a better dyeing yield with enhanced substantivity and better brightness in color.
    • 本发明涉及双功能蓝色活性染料,更具体地说,涉及由式(1)表示的单氯三嗪和乙酰氧基乙基砜作为反应性基团的双官能蓝色活性染料,其中M为碱金属原子,并且其具有优异的 1)将氨基苯基-β-乙酰氧基乙基砜基团引入到染料中可以使染料的损失最小化,因为其对水的低溶解度可以减少过滤期间剩余溶液的量,2)更容易的盐析过程需要较少的量 的盐,以便可以显着降低处理废水的成本,以及3)更好的染色产率,增强的亲和性和更好的颜色亮度。
    • 7. 发明授权
    • Reactive orange dyes containing vinyl sulfones
    • 含有乙烯基砜的活性橙色染料
    • US06992179B1
    • 2006-01-31
    • US09646937
    • 1999-03-26
    • Sea Wha OhMyeong Nyeo KangTae Kyung Kim
    • Sea Wha OhMyeong Nyeo KangTae Kyung Kim
    • C09B62/51
    • C09B62/51
    • The present invention relates to a reactive orange dye containing vinyl sulfone and more particularly, to the dye which have 6(7)-alkoxycarbonylamino-4-hydroxy-2-naphthalenesulfonic acid as a chromophore and aminophenyl-β-ethylsulfone derivative as an azo coupler. This dye provides excellent fastness in terms of light, washing, perspiration and chlorine as well as better dyeing yield than other monofunctional reactive dye. In Formula (1), M is alkaline metal atom; Z is —O—SO3M or OC(O)CH3; R is alkyl group having 1–4 of carbon atom; and a position of C6 or C7 is substituted with carbamate group.
    • 本发明涉及含有乙烯基砜的反应性橙色染料,更具体地说,涉及具有6(7) - 烷氧基羰基氨基-4-羟基-2-萘磺酸作为发色团和氨基苯基-β-乙基砜衍生物作为偶氮偶合剂的染料 。 与其他单官能活性染料相比,该染料在光,洗涤,出汗和氯气方面提供优异的牢度以及更好的染色产率。 式(1)中,M为碱金属原子; Z是-O-SO 3 M或OC(O)CH 3; R是具有1-4个碳原子的烷基; 并且C 6或C 7的位置被氨基甲酸酯基团取代。
    • 8. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US08609507B2
    • 2013-12-17
    • US13149365
    • 2011-05-31
    • Tae Kyung KimMin Sik JangSung Deok Kim
    • Tae Kyung KimMin Sik JangSung Deok Kim
    • H01L21/764
    • H01L27/11524H01L21/7682
    • A semiconductor device includes gates formed over a semiconductor substrate that are spaced apart from one another and each have a stack structure of a tunnel insulation layer, a floating gate, a dielectric layer, a first conductive layer, and a metal silicide layer, a first insulation layer formed along the sidewalls of the gates and a surface of the semiconductor substrate between the gates and configured to have a height lower than the top of the metal silicide layer; and a second insulation layer formed along surfaces of the first insulation layer and surfaces of the metal silicide layer and configured to cover an upper portion of a space between the gates, wherein an air gap is formed between the gates.
    • 半导体器件包括形成在半导体衬底上的彼此间隔开的栅极,并且每个栅极具有隧道绝缘层,浮置栅极,电介质层,第一导电层和金属硅化物层的堆叠结构,第一 沿着所述栅极的侧壁形成的绝缘层和所述栅极之间的所述半导体衬底的表面,并且被配置为具有低于所述金属硅化物层的顶部的高度; 以及第二绝缘层,其沿着所述第一绝缘层的表面和所述金属硅化物层的表面形成并且被构造成覆盖所述栅极之间的空间的上部,其中在所述栅极之间形成气隙。
    • 9. 发明授权
    • Method of forming patterns of semiconductor device
    • 形成半导体器件图案的方法
    • US08101520B2
    • 2012-01-24
    • US12650462
    • 2009-12-30
    • Tae Kyung Kim
    • Tae Kyung Kim
    • H01L21/44
    • H01L21/76838H01L21/76816
    • A method of forming patterns of a semiconductor device comprises forming a number of first insulating patterns that define sidewalls by patterning a first insulating layer formed over a semiconductor substrate, forming second insulating patterns, each second insulating pattern comprising a horizontal portion having two ends and being parallel to the semiconductor substrate and spaced protruding portions protruding from both ends of the horizontal portion parallel to the sidewalls of the first insulating patterns, forming third insulating patterns each filling a space between the protruding portions, removing the protruding portions to form trenches, and forming conductive patterns within the respective trenches.
    • 一种形成半导体器件的图形的方法包括:通过对形成在半导体衬底上形成的第一绝缘层进行构图来形成限定侧壁的多个第一绝缘图案,形成第二绝缘图案,每个第二绝缘图案包括具有两端的水平部分, 平行于半导体衬底,并且与水平部分的两端突出的间隔开的突出部分平行于第一绝缘图案的侧壁,形成第三绝缘图案,每个填充突出部分之间的空间,去除突出部分以形成沟槽,并形成 各个沟槽内的导电图案。
    • 10. 发明授权
    • Method of forming metal wiring of nonvolatile memory device
    • 形成非易失性存储器件金属布线的方法
    • US07964491B2
    • 2011-06-21
    • US12345612
    • 2008-12-29
    • Yong Chul ShinTae Kyung Kim
    • Yong Chul ShinTae Kyung Kim
    • H01L21/44
    • H01L21/76816H01L21/76802H01L23/485H01L27/105H01L27/11521H01L27/11529H01L2924/0002H01L2924/00
    • A method of forming metal wirings of a nonvolatile memory device include forming a first insulating layer over a semiconductor substrate including a first junction area and a second junction area, forming first and second contact holes through which the first and second junction areas are respectively exposed in the first insulating layer, forming first and second contact plugs within the first and second contact holes, etching a part of the second contact plug, thus forming a recess, forming a second insulating layer to fill the recess, forming a third insulating layer over the semiconductor substrate including the first and second insulating layers, forming a first trench through which the first contact plug is exposed a second trench through which the second contact plug is exposed by etching the third insulating layer, and forming first and second metal wirings within the first and second trenches, respectively.
    • 形成非易失性存储器件的金属配线的方法包括在包括第一接合区域和第二接合区域的半导体衬底上形成第一绝缘层,形成第一和第二接触孔,第一和第二接合区域分别通过该接触孔暴露在 第一绝缘层,在第一和第二接触孔内形成第一和第二接触塞,蚀刻第二接触塞的一部分,从而形成凹陷,形成第二绝缘层以填充凹部,在第 包括所述第一和第二绝缘层的半导体衬底,形成第一沟槽,所述第一接触插塞通过所述第一沟槽露出第二沟槽,所述第二接触插塞通过蚀刻所述第三绝缘层而暴露在所述第二沟槽中;以及在所述第一沟槽内形成第一和第二金属布线 和第二个沟槽。