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1. 发明申请

US20090096008A1 NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090096008A1
公开(公告)日：2009-04-16
申请号：US12249004
申请日：2008-10-10
申请人： Sun-jung Kim , Young-geun Park , Han-mei Choi , Seung-hwan Lee , Se-hoon Oh , Young-sun Kim , Sung-tae Kim
发明人： Sun-jung Kim , Young-geun Park , Han-mei Choi , Seung-hwan Lee , Se-hoon Oh , Young-sun Kim , Sung-tae Kim
IPC分类号： H01L29/788 , H01L23/58
CPC分类号： H01L29/42332 , H01L29/40114 , H01L29/40117 , H01L29/42348
摘要： A nonvolatile memory device having a blocking insulating layer with an excellent data retention property and a method of fabricating the same are provided. The nonvolatile memory device may include a semiconductor substrate having a channel region formed therein; and a gate stack including a tunneling insulating layer, a charge storing layer, a blocking insulating layer and a control gate electrode sequentially stacked on the channel region of the semiconductor substrate. The blocking insulating layer may comprise a lanthanum aluminum oxide having a formula of La2-xAlxOy and the composition parameter x may be 1
摘要翻译：提供了具有优异数据保存性能的阻挡绝缘层的非易失性存储器件及其制造方法。非易失性存储器件可以包括其中形成有沟道区的半导体衬底; 以及栅极堆叠，其包括顺序堆叠在半导体衬底的沟道区上的隧道绝缘层，电荷存储层，阻挡绝缘层和控制栅电极。阻挡绝缘层可以包含具有下式的La 2-x Al x O y的氧化镧铝，组成参数x可以是1

2. 发明申请

US20080096340A1 Method of fabricating a nonvolatile memory device 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20080096340A1
公开(公告)日：2008-04-24
申请号：US11605236
申请日：2006-11-29
申请人： Se-hoon Oh , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
发明人： Se-hoon Oh , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
IPC分类号： H01L21/8238
CPC分类号： H01L29/513 , G11C16/0466 , H01L21/02178 , H01L21/0228 , H01L21/3141 , H01L21/31616 , H01L21/3185 , H01L29/40117
摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a charge blocking layer on the charge trapping layer by supplying sequentially a metal source gas and an oxidizing gas onto the charge trapping layer, such that a supplying time of the oxidizing gas is form about 0.1 second to about 1.0 second, and forming a gate electrode layer on the charge blocking layer.
摘要翻译：一种制造非易失性存储器件的方法包括在半导体衬底上形成电荷隧道层，在电荷隧穿层上形成电荷俘获层，在电荷俘获层上形成电荷阻挡层，依次提供金属源气体和氧化气体进入电荷捕获层，使得氧化气体的供给时间形成约0.1秒至约1.0秒，并在电荷阻挡层上形成栅极电极层。

3. 发明授权

US07820514B2 Methods of forming flash memory devices including blocking oxide films 失效
标题翻译：形成闪存器件的方法包括封闭氧化膜
公开(公告)号：US07820514B2
公开(公告)日：2010-10-26
申请号：US11756427
申请日：2007-05-31
申请人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
发明人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L21/28282 , H01L29/517 , H01L29/518 , H01L29/78 , H01L29/792
摘要： A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.
摘要翻译：形成闪速存储器件的方法可以包括在半导体衬底上形成隧穿氧化膜，在隧道氧化膜上形成电荷存储层，在第一温度下在电荷存储层上形成第一阻挡氧化膜，形成第二在高于第一温度的第二温度下在第一阻挡氧化膜上形成阻挡氧化膜，以及在第二阻挡氧化膜上形成栅电极。

4. 发明申请

US20080076224A1 METHODS OF FORMING FLASH MEMORY DEVICES INCLUDING BLOCKING OXIDE FILMS 失效
标题翻译：形成包含阻塞氧化膜的闪存存储器件的方法
公开(公告)号：US20080076224A1
公开(公告)日：2008-03-27
申请号：US11756427
申请日：2007-05-31
申请人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
发明人： Min-kyung Ryu , Han-mei Choi , Seung-hwan Lee , Sun-jung Kim , Se-hoon Oh
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L21/28282 , H01L29/517 , H01L29/518 , H01L29/78 , H01L29/792
摘要： A method of forming a flash memory device can include forming a tunneling oxide film on a semiconductor substrate, forming a charge storing layer on the tunneling oxide film, forming a first blocking oxide film on the charge storing layer at a first temperature, forming a second blocking oxide film on the first blocking oxide film at a second temperature higher than the first temperature, and forming a gate electrode on the second blocking oxide film.
摘要翻译：形成闪速存储器件的方法可以包括在半导体衬底上形成隧穿氧化膜，在隧道氧化膜上形成电荷存储层，在第一温度下在电荷存储层上形成第一阻挡氧化膜，形成第二在高于第一温度的第二温度下在第一阻挡氧化膜上形成阻挡氧化膜，以及在第二阻挡氧化膜上形成栅电极。

5. 发明申请

US20090124070A1 Methods of Manufacturing Semiconductor Devices Including Metal Oxide Layers 有权
标题翻译：制造包含金属氧化物层的半导体器件的方法
公开(公告)号：US20090124070A1
公开(公告)日：2009-05-14
申请号：US12270014
申请日：2008-11-13
申请人： Dong Chul Yoo , Myoung-bum Lee , Young-geun Park , Han-mei Choi , Se-hoon Oh , Byong-ju Kim , Kyong-won An , Seon-ho Jo
发明人： Dong Chul Yoo , Myoung-bum Lee , Young-geun Park , Han-mei Choi , Se-hoon Oh , Byong-ju Kim , Kyong-won An , Seon-ho Jo
IPC分类号： H01L21/3205
CPC分类号： H01L21/31616 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/28273 , H01L21/28282 , H01L21/3141 , H01L21/3142 , H01L21/3145 , H01L21/31604
摘要： Methods of manufacturing a semiconductor device are provided including forming a charge storage layer on a gate insulating layer that is on a semiconductor substrate. A blocking insulating layer is formed on the charge storage layer and an electrode layer is formed on the blocking insulating layer. The blocking insulating layer may be formed by forming a lower metal oxide layer at a first temperature and forming an upper metal oxide layer on the lower metal oxide layer at a second temperature, lower than the first temperature.
摘要翻译：提供了制造半导体器件的方法，包括在半导体衬底上的栅极绝缘层上形成电荷存储层。在电荷存储层上形成阻挡绝缘层，在隔离绝缘层上形成电极层。阻挡绝缘层可以通过在第一温度下形成下部金属氧化物层并在低于第一温度的第二温度下在下部金属氧化物层上形成上部金属氧化物层而形成。

6. 发明授权

US07790591B2 Methods of manufacturing semiconductor devices including metal oxide layers 有权
标题翻译：制造包括金属氧化物层的半导体器件的方法
公开(公告)号：US07790591B2
公开(公告)日：2010-09-07
申请号：US12270014
申请日：2008-11-13
申请人： Dong-chul Yoo , Myoung-bum Lee , Young-geun Park , Han-mei Choi , Se-hoon Oh , Byong-ju Kim , Kyong-won An , Seon-ho Jo
发明人： Dong-chul Yoo , Myoung-bum Lee , Young-geun Park , Han-mei Choi , Se-hoon Oh , Byong-ju Kim , Kyong-won An , Seon-ho Jo
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/31616 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/28273 , H01L21/28282 , H01L21/3141 , H01L21/3142 , H01L21/3145 , H01L21/31604
摘要： Methods of manufacturing a semiconductor device are provided including forming a charge storage layer on a gate insulating layer that is on a semiconductor substrate. A blocking insulating layer is formed on the charge storage layer and an electrode layer is formed on the blocking insulating layer. The blocking insulating layer may be formed by forming a lower metal oxide layer at a first temperature and forming an upper metal oxide layer on the lower metal oxide layer at a second temperature, lower than the first temperature.
摘要翻译：提供了制造半导体器件的方法，包括在半导体衬底上的栅极绝缘层上形成电荷存储层。在电荷存储层上形成阻挡绝缘层，在隔离绝缘层上形成电极层。阻挡绝缘层可以通过在第一温度下形成下部金属氧化物层并在低于第一温度的第二温度下在下部金属氧化物层上形成上部金属氧化物层而形成。

7. 发明授权

US07314806B2 Methods of forming metal-insulator-metal (MIM) capacitors with separate seed 有权
标题翻译：用分离的种子形成金属 - 绝缘体 - 金属（MIM）电容器的方法
公开(公告)号：US07314806B2
公开(公告)日：2008-01-01
申请号：US11097404
申请日：2005-04-01
申请人： Jae-hyoung Choi , Sung-tae Kim , Ki-chul Kim , Cha-young Yoo , Jeong-hee Chung , Se-hoon Oh , Jeong-sik Choi
发明人： Jae-hyoung Choi , Sung-tae Kim , Ki-chul Kim , Cha-young Yoo , Jeong-hee Chung , Se-hoon Oh , Jeong-sik Choi
IPC分类号： H01L21/20
CPC分类号： H01L21/31122
摘要： A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a metal-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.
摘要翻译：可以在金属 - 绝缘体 - 金属（MIM）型电容器的金属氮化物下电极上形成金属 - 氮化物种子电介质层。金属 - 氮化物种子电介质层可以用作阻挡层，以在例如用于在包括MIM型的集成电路中形成上层金属化/结构的后端处理中减少与金属氮化物下电极的反应电容器。包含在金属 - 氮氧化物种子电介质层中的氮可以减少在常规型MIM电容器中可能发生的反应类型。可以在金属 - 氮化物种子介电层上形成金属氧化物主介电层，并且可以与MIM型电容器中的金属 - 氮化物种子电介质层保持分离。金属氧化物主电介质层可以被稳定（使用例如热或等离子体处理）以从其中去除缺陷（例如碳）并调整金属氧化物主介电层的化学计量。

8. 发明授权

US06995071B2 Methods of forming MIM type capacitor structures using low temperature plasma processing 有权
标题翻译：使用低温等离子体处理形成MIM型电容器结构的方法
公开(公告)号：US06995071B2
公开(公告)日：2006-02-07
申请号：US10830214
申请日：2004-04-22
申请人： Se-hoon Oh , Jung-hee Chung , Jae-hyoung Choi , Jeong-sik Choi , Sung-tae Kim , Cha-young Yoo
发明人： Se-hoon Oh , Jung-hee Chung , Jae-hyoung Choi , Jeong-sik Choi , Sung-tae Kim , Cha-young Yoo
IPC分类号： H10L21/8242
CPC分类号： H01L27/10852 , C23C16/405 , C23C16/56 , H01L21/02181 , H01L21/0228 , H01L21/0234 , H01L21/02356 , H01L21/31645 , H01L27/10817 , H01L27/10855 , H01L28/91 , Y10S438/957
摘要： Methods of forming metal-insulator-metal type capacitors in integrated circuit memory devices can include crystallizing an HfO2 dielectric layer on a lower electrode of a capacitor structure in a low temperature plasma treatment at a temperature in range between about 250 degrees Centigrade and about 450 degrees Centigrade. An upper electrode can be formed on the HfO2 dielectric layer.
摘要翻译：在集成电路存储器件中形成金属 - 绝缘体 - 金属型电容器的方法可以包括在低温等离子体处理中在电容器结构的下部电极上结晶HfO 2/2电介质层，温度范围为约250摄氏度和约450摄氏度。上电极可以形成在HfO 2 2电介质层上。

9. 发明申请

US20050227432A1 Methods of forming metal-insulator-metal (MIM) capacitors with separate seed and main dielectric layers and MIM capacitors so formed 有权
标题翻译：形成金属 - 绝缘体 - 金属（MIM）电容器的方法，该电容器具有单独的种子和主电介质层以及如此形成的MIM电容器
公开(公告)号：US20050227432A1
公开(公告)日：2005-10-13
申请号：US11097404
申请日：2005-04-01
申请人： Jae-hyoung Choi , Sung-tae Kim , Ki-chul Kim , Cha-young Yoo , Jeong-hee Chung , Se-hoon Oh , Jeong-sik Choi
发明人： Jae-hyoung Choi , Sung-tae Kim , Ki-chul Kim , Cha-young Yoo , Jeong-hee Chung , Se-hoon Oh , Jeong-sik Choi
IPC分类号： H01L27/108 , H01L21/311 , H01L21/8242
CPC分类号： H01L21/31122
摘要： A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a meta-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.
摘要翻译：可以在间绝缘子金属（MIM）型电容器的金属氮化物下电极上形成金属 - 氮氧化物种子电介质层。金属 - 氮化物种子电介质层可以用作阻挡层，以在例如用于在包括MIM型的集成电路中形成上层金属化/结构的后端处理中减少与金属氮化物下电极的反应电容器。包含在金属 - 氮氧化物种子电介质层中的氮可以减少在常规型MIM电容器中可能发生的反应类型。可以在金属 - 氮化物种子介电层上形成金属氧化物主介电层，并且可以与MIM型电容器中的金属 - 氮化物种子电介质层保持分离。金属氧化物主电介质层可以被稳定（使用例如热或等离子体处理）以从其中去除缺陷（例如碳）并调整金属氧化物主介电层的化学计量。

10. 发明授权

US06743678B2 Methods for manufacturing semiconductor memory devices 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US06743678B2
公开(公告)日：2004-06-01
申请号：US10424959
申请日：2003-04-28
申请人： Kwang-hee Lee , Sung-tae Kim , Cha-young Yoo , Han-jin Lim , Wan-don Kim , Se-hoon Oh
发明人： Kwang-hee Lee , Sung-tae Kim , Cha-young Yoo , Han-jin Lim , Wan-don Kim , Se-hoon Oh
IPC分类号： H01L21336
CPC分类号： H01L28/75 , H01L28/65
摘要： A lower electrode is formed from a first metal on a semiconductor substrate. Atoms of a second metal, that is different than the first metal, are diffused into the lower electrode. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the dielectric layer. Diffusion of second metal atoms into the lower electrode may reduce or prevent crystal grain growth and agglomeration on a surface of the lower electrode during a subsequent high temperature process.
摘要翻译：下电极由半导体衬底上的第一金属形成。与第一金属不同的第二金属的原子被扩散到下电极中。在下电极上形成介电层，在电介质层上形成上电极。在随后的高温过程中，第二金属原子向下电极的扩散可以减少或防止下电极表面上的晶粒生长和结块。

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