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    • 1. 发明申请
    • METHOD FOR COLLECTING (METH)ACRYLIC ACID AND APPARATUS FOR COLLECTING (METH)ACRYLIC ACID
    • 收集(甲基)丙烯酸的方法和收集(甲基)丙烯酸的装置
    • US20100224478A1
    • 2010-09-09
    • US12739113
    • 2008-10-23
    • Se-Won BaekKyoung-Su HaSung-Kyoo ParkJun-Seok KoDong-Hyun WooYoung-Bae KimJung-Hoon Chang
    • Se-Won BaekKyoung-Su HaSung-Kyoo ParkJun-Seok KoDong-Hyun WooYoung-Bae KimJung-Hoon Chang
    • C07C57/07B01D3/36B01D3/34
    • C07C51/42C07C57/04
    • The present invention provides a (meth)acrylic acid collecting method for collecting a (meth)acrylic acid from a mixed gas that includes an organic byproduct, a steam, and a (meth)acrylic acid that are generated in a production reaction of the (meth)acrylic acid, which includes the steps of a) contacting the mixed gas that includes the organic byproduct, the steam, and the (meth)acrylic acid with a (meth)acrylic acid absorption solvent to obtain a gas that includes the organic byproduct and the steam and the (meth)acrylic acid containing solution while the gas and the (meth)acrylic acid containing solution are separated from each other; b) contacting the gas that includes the organic byproduct and the steam that are obtained in the step a with the organic byproduct absorption solvent to obtain the gas that includes the steam and the organic byproduct containing solution while the gas and the organic byproduct containing solution are separated from each other; c) supplying the gas that includes the steam that is obtained in the step b into the production reaction of the (meth)acrylic acid; and d) obtaining the (meth)acrylic acid from the (meth)acrylic acid containing solution that is obtained in the step a while the (meth)acrylic acid and the (meth)acrylic acid containing solution are separated from each other, and a (meth)acrylic acid collecting device.
    • 本发明提供一种(甲基)丙烯酸收集方法,用于从包含有机副产物,蒸汽和(甲基)丙烯酸的混合气体中收集(甲基)丙烯酸,所述有机副产物,蒸汽和(甲基)丙烯酸在( 甲基)丙烯酸,其包括以下步骤:a)使包含有机副产物,蒸汽和(甲基)丙烯酸的混合气体与(甲基)丙烯酸吸收溶剂接触以获得包含有机副产物的气体 和蒸汽和(甲基)丙烯酸溶液,同时气体和(甲基)丙烯酸溶液彼此分离; b)将包含有机副产物的气体和步骤a中获得的蒸汽与有机副产物吸收溶剂接触,以获得包含蒸汽和含有机副产物的溶液的气体,同时气体和含有机副产物的溶液为 相互分离 c)将包含步骤b中获得的蒸汽的气体供应到(甲基)丙烯酸的生产反应中; 和d)在(甲基)丙烯酸和(甲基)丙烯酸的溶液相互分离的同时,从步骤a得到的(甲基)丙烯酸溶液得到(甲基)丙烯酸, (甲基)丙烯酸收集装置。
    • 2. 发明授权
    • Method for collecting (meth)acrylic acid and apparatus for collecting (meth)acrylic acid
    • 收集(甲基)丙烯酸的方法和收集(甲基)丙烯酸的装置
    • US08246790B2
    • 2012-08-21
    • US12739113
    • 2008-10-23
    • Se-Won BaekKyoung-Su HaSung-Kyoo ParkJun-Seok KoDong-Hyun WooYoung-Bae KimJung-Hoon Chang
    • Se-Won BaekKyoung-Su HaSung-Kyoo ParkJun-Seok KoDong-Hyun WooYoung-Bae KimJung-Hoon Chang
    • C07C51/42
    • C07C51/42C07C57/04
    • The present invention provides a (meth)acrylic acid collecting method for collecting a (meth)acrylic acid from a mixed gas that includes an organic byproduct, a steam, and a (meth)acrylic acid that are generated in a production reaction of the (meth)acrylic acid, which includes the steps of a) contacting the mixed gas that includes the organic byproduct, the steam, and the (meth)acrylic acid with a (meth)acrylic acid absorption solvent to obtain a gas that includes the organic byproduct and the steam and the (meth)acrylic acid containing solution while the gas and the (meth)acrylic acid containing solution are separated from each other; b) contacting the gas that includes the organic byproduct and the steam that are obtained in the step a with the organic byproduct absorption solvent to obtain the gas that includes the steam and the organic byproduct containing solution while the gas and the organic byproduct containing solution are separated from each other; c) supplying the gas that includes the steam that is obtained in the step b into the production reaction of the (meth)acrylic acid; and d) obtaining the (meth)acrylic acid from the (meth)acrylic acid containing solution that is obtained in the step a while the (meth)acrylic acid and the (meth)acrylic acid containing solution are separated from each other, and a (meth)acrylic acid collecting device.
    • 本发明提供一种(甲基)丙烯酸收集方法,用于从包含有机副产物,蒸汽和(甲基)丙烯酸的混合气体中收集(甲基)丙烯酸,所述有机副产物,蒸汽和(甲基)丙烯酸在( 甲基)丙烯酸,其包括以下步骤:a)使包含有机副产物,蒸汽和(甲基)丙烯酸的混合气体与(甲基)丙烯酸吸收溶剂接触以获得包含有机副产物的气体 和蒸汽和(甲基)丙烯酸溶液,同时气体和(甲基)丙烯酸溶液彼此分离; b)将包含有机副产物的气体和步骤a中获得的蒸汽与有机副产物吸收溶剂接触,以获得包含蒸汽和含有机副产物的溶液的气体,同时气体和含有机副产物的溶液为 相互分离 c)将包含步骤b中获得的蒸汽的气体供应到(甲基)丙烯酸的生产反应中; 和d)在(甲基)丙烯酸和(甲基)丙烯酸的溶液相互分离的同时,从步骤a得到的(甲基)丙烯酸溶液得到(甲基)丙烯酸, (甲基)丙烯酸收集装置。
    • 5. 发明申请
    • Mask read only memory (ROM) and method of fabricating the same
    • 掩模只读存储器(ROM)及其制造方法
    • US20070032022A1
    • 2007-02-08
    • US11499375
    • 2006-08-04
    • Hong-Kook MinChang-Mo ParkSung-Kyoo Park
    • Hong-Kook MinChang-Mo ParkSung-Kyoo Park
    • H01L21/8234
    • H01L27/112H01L27/11253
    • The Mask ROM includes a plurality of doped lines arranged on a substrate of a first conductivity. The doped lines have a second conductivity. In addition, the Mask ROM further includes an insulation film covering the substrate, a plurality of interconnections intersecting the doped lines in parallel and arranged on the insulation film, an isolative doped region of the first conductivity arranged at the doped line of at least one intersecting place selected from intersecting places between the interconnections and the doped lines, a first contact plug penetrating the insulation film at the selected intersecting place and connecting the isolative doped region to the interconnection, and a second contact plug penetrating the insulation film at a deselected intersecting place and connecting the doped line to the interconnection.
    • 掩模ROM包括布置在第一导电性的衬底上的多个掺杂线。 掺杂线具有第二导电性。 此外,掩模ROM还包括覆盖基板的绝缘膜,与掺杂线并联并布置在绝缘膜上的多个互连,第一导电的隔离掺杂区域布置在至少一个相交的掺杂线 在互连和掺杂线之间的相交位置选择的位置,穿过所选交叉位置处的绝缘膜并将隔离掺杂区域连接到互连的第一接触插塞,以及在取消选择的相交位置处穿过绝缘膜的第二接触插塞 并将掺杂线连接到互连。
    • 7. 发明申请
    • MASK ROM CELL STRUCTURE AND METHOD OF FABRICATING THE SAME
    • 掩模ROM单元结构及其制造方法
    • US20100219469A1
    • 2010-09-02
    • US12712400
    • 2010-02-25
    • Hong-Kook MinYong-Suk ChoiSung-Kyoo Park
    • Hong-Kook MinYong-Suk ChoiSung-Kyoo Park
    • H01L29/78H01L21/336
    • H01L27/112G11C17/10H01L27/1126
    • A mask read-only memory (ROM) cell structure includes buried gate electrodes, common source regions under the gate electrodes, common drain regions extending between upper portions of adjacent ones of the gate electrodes, and two vertical channel regions on opposite sides, respectively, of each of the gate electrodes. The channel regions are selectively coded such that the cell transistors are on or off depending on whether the channel region of the transistor is coded. To this end, selected ones of the channel regions of the mask ROM structure are coded by forming ion implantation regions that differentiate the threshold voltages of the thus coded channel regions from the non-coded channel regions. The coding process may thus be carried out using a shallow ion implantation process. Accordingly, a relatively thin mask for coding may be used, and the ion implantation process may be carried out at a relatively low energy level.
    • 掩模只读存储器(ROM)单元结构包括掩埋栅极电极,栅电极下方的公共源极区域,在相邻栅极电极的上部之间延伸的公共漏极区域和相对侧上的两个垂直沟道区域, 的每个栅电极。 选择性地编码通道区域,使得单元晶体管根据晶体管的沟道区域是否被编码而导通或截止。 为此,通过形成将由此编码的沟道区域的阈值电压与非编码沟道区域区分开的离子注入区域来对掩模ROM结构的通道区域中的选定区域进行编码。 因此编码过程可以使用浅离子注入工艺进行。 因此,可以使用相对薄的用于编码的掩模,并且离子注入工艺可以在相对较低的能级进行。
    • 8. 发明申请
    • Split-gate-type nonvolatile memory device and method of fabricating the same
    • 分闸式非易失性存储器件及其制造方法
    • US20070161190A1
    • 2007-07-12
    • US11648959
    • 2007-01-03
    • Sung-Kyoo ParkHong-Kook MinChang-Mo Park
    • Sung-Kyoo ParkHong-Kook MinChang-Mo Park
    • H01L21/336
    • H01L27/115H01L27/11519H01L27/11521
    • Provided are a split-gate-type nonvolatile memory device and method of fabricating the same. The method includes forming isolation patterns defining active regions in a predetermined region of a semiconductor substrate. A first conductive layer is formed on the resultant structure having the isolation patterns. The first conductive layer has openings exposing both ends of the isolation patterns. Mask patterns are formed between the openings on the first conductive layer, thereby exposing a top surface of the first conductive layer as a rectangular type. The exposed top surface of the first conductive layer is thermally oxidized to form silicon oxide patterns with rectangular shapes. The first conductive layer is anisotropically etched using the silicon oxide patterns as etch masks to form floating conductive patterns. Thereafter, control gate electrodes are formed across the isolation patterns on the silicon oxide patterns.
    • 提供一种分闸式非易失性存储装置及其制造方法。 该方法包括在半导体衬底的预定区域中形成限定有源区的隔离图案。 在具有隔离图案的所得结构上形成第一导电层。 第一导电层具有露出隔离图案的两端的开口。 掩模图案形成在第一导电层上的开口之间,从而将第一导电层的顶表面暴露为矩形。 第一导电层的暴露的顶表面被热氧化以形成具有矩形形状的氧化硅图案。 使用氧化硅图案作为蚀刻掩模对第一导电层进行各向异性蚀刻,以形成浮动导电图案。 此后,在氧化硅图案上的隔离图案之间形成控制栅电极。