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1. 发明申请

US20070032022A1 Mask read only memory (ROM) and method of fabricating the same 审中-公开
标题翻译：掩模只读存储器（ROM）及其制造方法
公开(公告)号：US20070032022A1
公开(公告)日：2007-02-08
申请号：US11499375
申请日：2006-08-04
申请人： Hong-Kook Min , Chang-Mo Park , Sung-Kyoo Park
发明人： Hong-Kook Min , Chang-Mo Park , Sung-Kyoo Park
IPC分类号： H01L21/8234
CPC分类号： H01L27/112 , H01L27/11253
摘要： The Mask ROM includes a plurality of doped lines arranged on a substrate of a first conductivity. The doped lines have a second conductivity. In addition, the Mask ROM further includes an insulation film covering the substrate, a plurality of interconnections intersecting the doped lines in parallel and arranged on the insulation film, an isolative doped region of the first conductivity arranged at the doped line of at least one intersecting place selected from intersecting places between the interconnections and the doped lines, a first contact plug penetrating the insulation film at the selected intersecting place and connecting the isolative doped region to the interconnection, and a second contact plug penetrating the insulation film at a deselected intersecting place and connecting the doped line to the interconnection.
摘要翻译：掩模ROM包括布置在第一导电性的衬底上的多个掺杂线。掺杂线具有第二导电性。此外，掩模ROM还包括覆盖基板的绝缘膜，与掺杂线并联并布置在绝缘膜上的多个互连，第一导电的隔离掺杂区域布置在至少一个相交的掺杂线在互连和掺杂线之间的相交位置选择的位置，穿过所选交叉位置处的绝缘膜并将隔离掺杂区域连接到互连的第一接触插塞，以及在取消选择的相交位置处穿过绝缘膜的第二接触插塞并将掺杂线连接到互连。

2. 发明申请

US20070161190A1 Split-gate-type nonvolatile memory device and method of fabricating the same 审中-公开
标题翻译：分闸式非易失性存储器件及其制造方法
公开(公告)号：US20070161190A1
公开(公告)日：2007-07-12
申请号：US11648959
申请日：2007-01-03
申请人： Sung-Kyoo Park , Hong-Kook Min , Chang-Mo Park
发明人： Sung-Kyoo Park , Hong-Kook Min , Chang-Mo Park
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11519 , H01L27/11521
摘要： Provided are a split-gate-type nonvolatile memory device and method of fabricating the same. The method includes forming isolation patterns defining active regions in a predetermined region of a semiconductor substrate. A first conductive layer is formed on the resultant structure having the isolation patterns. The first conductive layer has openings exposing both ends of the isolation patterns. Mask patterns are formed between the openings on the first conductive layer, thereby exposing a top surface of the first conductive layer as a rectangular type. The exposed top surface of the first conductive layer is thermally oxidized to form silicon oxide patterns with rectangular shapes. The first conductive layer is anisotropically etched using the silicon oxide patterns as etch masks to form floating conductive patterns. Thereafter, control gate electrodes are formed across the isolation patterns on the silicon oxide patterns.
摘要翻译：提供一种分闸式非易失性存储装置及其制造方法。该方法包括在半导体衬底的预定区域中形成限定有源区的隔离图案。在具有隔离图案的所得结构上形成第一导电层。第一导电层具有露出隔离图案的两端的开口。掩模图案形成在第一导电层上的开口之间，从而将第一导电层的顶表面暴露为矩形。第一导电层的暴露的顶表面被热氧化以形成具有矩形形状的氧化硅图案。使用氧化硅图案作为蚀刻掩模对第一导电层进行各向异性蚀刻，以形成浮动导电图案。此后，在氧化硅图案上的隔离图案之间形成控制栅电极。

3. 发明申请

US20070148867A1 NONVOLATILE MEMORY DEVICES HAVING FLOATING GATES AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有浮动门的非易失存储器件及其制造方法
公开(公告)号：US20070148867A1
公开(公告)日：2007-06-28
申请号：US11614297
申请日：2006-12-21
申请人： Chang-Mo Park , Hong-Kook Min , Yong-Suk Choi
发明人： Chang-Mo Park , Hong-Kook Min , Yong-Suk Choi
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , H01L21/28114 , H01L29/40114 , H01L29/42324 , H01L29/66825
摘要： A nonvolatile memory device includes a liner covering a sidewall and bottom of a trench that defines an active field in a substrate and a field isolation film disposed on the liner which fills the trench. The nonvolatile memory device further includes a floating gate disposed on the active field having an edge of which covers the liner, a tunnel insulation film interposed between the active field and the floating gate and a charge diffusion barrier interposed between the liner and the floating gate.
摘要翻译：非易失性存储器件包括覆盖限定衬底中的有源场的沟槽的侧壁和底部的衬垫以及设置在填充沟槽的衬垫上的场隔离膜。所述非易失性存储器件还包括布置在所述有源场上的浮置栅极，其边缘覆盖所述衬垫，插入在所述有源场和所述浮置栅极之间的隧道绝缘膜以及插入在所述衬垫和所述浮动栅极之间的电荷扩散障碍物。

4. 发明授权

US09257679B2 Manufacturing method for flexible display device 有权
标题翻译：柔性显示装置的制造方法
公开(公告)号：US09257679B2
公开(公告)日：2016-02-09
申请号：US13949872
申请日：2013-07-24
申请人： Hong-Ro Lee , Chang-Mo Park , Yo-Sub Ko
发明人： Hong-Ro Lee , Chang-Mo Park , Yo-Sub Ko
IPC分类号： H01L21/02 , H01L51/56 , H01L51/00
CPC分类号： H01L51/56 , H01L51/003 , H01L2251/5338
摘要： A method of manufacturing a flexible display device, the method including depositing a separation layer on a supporting substrate; depositing a display panel on the separation layer; cutting the display panel to have a predetermined shape; cutting the supporting substrate and the separation layer to have a wider area than an area where the display panel, that is cut with the predetermined shape, contacts the supporting substrate and the separate layer; and separating the separate layer and the display panel from each other.
摘要翻译：一种制造柔性显示装置的方法，所述方法包括在支撑基板上沉积分离层; 在分离层上沉积显示面板; 将显示面板切割成具有预定的形状; 将支撑基板和分离层切割成具有比以预定形状切割的显示面板与支撑基板和分离层接触的区域更宽的面积; 并将分开的层和显示面板彼此分开。

5. 发明授权

US08920563B2 Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same 有权
标题翻译：薄膜沉积装置及使用该有机发光显示装置的方法
公开(公告)号：US08920563B2
公开(公告)日：2014-12-30
申请号：US13225992
申请日：2011-09-06
申请人： Mu-Gyeom Kim , Chang-Mo Park
发明人： Mu-Gyeom Kim , Chang-Mo Park
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306 , C23C14/04 , C23C14/56 , H01L51/00
CPC分类号： C23C14/562 , C23C14/042 , H01L51/0011 , H01L2251/105
摘要： A thin film deposition apparatus that may be easily manufactured, that may be easily applied to manufacture large-sized display devices on a mass scale, and that improves manufacturing yield and deposition efficiency, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus are disclosed. The thin film deposition apparatus for forming a thin film on a substrate, the thin film deposition apparatus including: a magnet disposed on a first surface of the substrate; a patterning wheel disposed on a second surface opposite to the first surface of the substrate, rotatable around a rotation axis, and including a plurality of grooves along a peripheral surface; and a patterning wire including a plurality of blockers having shapes corresponding to the plurality of grooves of the patterning wheel, and windable to the patterning wheel.
摘要翻译：可容易制造的薄膜沉积装置，其可以容易地用于大规模生产大尺寸显示装置，并且提高制造成品率和沉积效率，以及通过以下方式制造有机发光显示装置的方法：公开了使用薄膜沉积设备。一种用于在基板上形成薄膜的薄膜沉积装置，所述薄膜沉积装置包括：设置在所述基板的第一表面上的磁体; 图案化轮，设置在与所述基板的与所述基板的所述第一表面相反的第二表面上，可绕旋转轴线旋转，并且沿周向表面包括多个凹槽; 以及图案线，其包括具有与图案轮的多个槽对应的形状的多个阻挡件，并且可卷绕到图案轮。

6. 发明授权

US08546799B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08546799B2
公开(公告)日：2013-10-01
申请号：US13137531
申请日：2011-08-24
申请人： Mu-Gyeom Kim , Chang-Mo Park
发明人： Mu-Gyeom Kim , Chang-Mo Park
IPC分类号： H01L29/10
CPC分类号： H01L27/3227
摘要： An OLED apparatus including a substrate with a lower active layer thereon and including an oxide semiconductor for generating current in response to light; an etching prevention layer on an upper portion of the lower active layer and including a contact hole; a source/drain electrode on the etching prevention layer and electrically connected to the lower active layer through the contact hole; an upper charging electrode on the etching prevention layer and overlapping the lower active layer; a light emitting layer contacting the upper charging electrode for generating light; and a cathode electrode facing the upper charging electrode, wherein the light emitting layer is configured to be driven and emit light in response to a driving voltage applied to the upper charging electrode, and the lower active layer is configured to store current in the oxide semiconductor in response to the driving voltage applied to the upper charging electrode.
摘要翻译：一种OLED装置，包括其上具有较低有源层的衬底并且包括用于响应于光而产生电流的氧化物半导体; 所述下部有源层的上部具有蚀刻防止层，并且包括接触孔; 在该防蚀层上形成源极/漏电极，并通过接触孔与下部有源层电连接; 在所述防蚀层上的上充电电极，并与所述下有源层重叠; 接触用于产生光的上充电电极的发光层; 以及面对所述上部充电电极的阴极电极，其中，所述发光层被配置为响应于施加到所述上部充电电极的驱动电压而被驱动并发光，并且所述下部有源层被配置为将电流存储在所述氧化物半导体响应于施加到上充电电极的驱动电压。

7. 发明授权

US08330353B2 Organic light emitting device and manufacturing method thereof 有权
标题翻译：有机发光器件及其制造方法
公开(公告)号：US08330353B2
公开(公告)日：2012-12-11
申请号：US12326555
申请日：2008-12-02
申请人： Jun-Ho Choi , Sung-Soo Lee , Chang-Mo Park , Seong-Min Kim
发明人： Jun-Ho Choi , Sung-Soo Lee , Chang-Mo Park , Seong-Min Kim
IPC分类号： H01J1/62
CPC分类号： H01L51/5203 , H01L27/12 , H01L27/1248 , H01L27/3213 , H01L27/322 , H01L27/3248 , H01L27/3258 , H01L51/5271
摘要： The present invention relates to an organic light emitting device including a substrate, an insulating layer disposed on the substrate, a first electrode disposed on the insulating layer, an organic light emitting member disposed on the first electrode, and a second electrode disposed on the organic light emitting member. The insulating layer includes a furrow corresponding to at least one edge of the first electrode, and at least a portion of the second electrode is disposed in the furrow.
摘要翻译：本发明涉及一种有机发光器件，其包括衬底，设置在衬底上的绝缘层，设置在绝缘层上的第一电极，设置在第一电极上的有机发光部件和设置在有机器件上的第二电极发光部件。绝缘层包括对应于第一电极的至少一个边缘的沟槽，并且第二电极的至少一部分设置在沟槽中。

8. 发明申请

US20120043547A1 THIN FILM CHARGED BODY SENSOR 有权
标题翻译：薄膜充电体感应器
公开(公告)号：US20120043547A1
公开(公告)日：2012-02-23
申请号：US13209464
申请日：2011-08-15
申请人： Mu-Gyeom KIM , Chang-Mo Park , Il-Soo Park , Yong-Soo Lee , Young-Mi Cho
发明人： Mu-Gyeom KIM , Chang-Mo Park , Il-Soo Park , Yong-Soo Lee , Young-Mi Cho
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/0705 , H01L29/42384 , H01L29/78669 , H01L29/78678
摘要： A thin film charged body sensor for sensing a contact and/or non-contact movement of a charged body based on an electric field of the charged body. The thin film charged body sensor may include a substrate, a first thin film transistor unit on the substrate, and including a gate layer, an active layer insulated from the gate layer, and source/drain layers insulated from the gate layer and connected to the active layer; and a thin film antenna unit on the substrate, and including a first film including a conductive material electrically connected to the gate layer, the thin film antenna unit adapted to generate an input current in response to an electric field of a charged body.
摘要翻译：一种薄膜带电体传感器，用于基于带电体的电场感测带电体的接触和/或非接触运动。薄膜带电体传感器可以包括衬底，衬底上的第一薄膜晶体管单元，并且包括栅极层，与栅极层绝缘的有源层以及与栅极层绝缘并连接到栅极层的源极/漏极层活性层以及薄膜天线单元，所述薄膜天线单元包括与所述栅极层电连接的导电材料的第一膜，所述薄膜天线单元适于响应于带电体的电场产生输入电流。

9. 发明申请

US20120025194A1 THIN-FILM TRANSISTOR SENSOR AND METHOD OF MANUFACTURING THE TFT SENSOR 有权
标题翻译：薄膜晶体管传感器及制造TFT传感器的方法
公开(公告)号：US20120025194A1
公开(公告)日：2012-02-02
申请号：US13185630
申请日：2011-07-19
申请人： Mu-Gyeom KIM , Chang-Mo Park
发明人： Mu-Gyeom KIM , Chang-Mo Park
IPC分类号： H01L29/786 , H01L21/336 , H01L29/04
CPC分类号： H01L29/7869 , G06F3/0412 , G06F3/044 , G06F2203/04111 , H01L29/41733 , H01L29/42384
摘要： According to an aspect of the present invention, there is provided a thin-film transistor (TFT) sensor, including a bottom gate electrode on a substrate, an insulation layer on the bottom gate electrode, an active layer in a donut shape on the insulation layer, the active layer including a channel through which a current generated by a charged body flows, an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other.
摘要翻译：根据本发明的一个方面，提供了一种薄膜晶体管（TFT）传感器，其包括在基底上的底栅电极，底栅电极上的绝缘层，绝缘体上的环形形式的活性层所述有源层包括通过电荷产生的电流流过的通道，所述有源层上的蚀刻停止层，所述蚀刻停止层包括第一接触孔和第二接触孔，以及源电极和漏极电极埋置第一和第二接触孔，源极和漏极设置在蚀刻停止层上以彼此面对。

10. 发明授权

US09086752B2 Touch sensor 有权
标题翻译：触摸传感器
公开(公告)号：US09086752B2
公开(公告)日：2015-07-21
申请号：US12912638
申请日：2010-10-26
申请人： Mu-Gyeom Kim , Chang-Mo Park , Il-Soo Park , Yong-Soo Lee
发明人： Mu-Gyeom Kim , Chang-Mo Park , Il-Soo Park , Yong-Soo Lee
IPC分类号： H01L35/24 , H01L51/00 , G06F3/041
CPC分类号： G06F3/047 , G06F3/0412 , G09G3/3208 , G09G5/02 , G09G2300/0426
摘要： A touch sensor and an organic light-emitting display including the sensor are disclosed. In one embodiment, the touch sensor includes i) a substrate, ii) a sensing unit formed on or over the substrate and containing hydrogen ions, iii) a touch sensor active layer formed on or above the sensing unit and iv) a touch sensor source electrode and a touch sensor drain electrode that are electrically connected to the touch sensor active layer. The touch sensor further includes a protective layer covering the touch sensor source electrode and the touch sensor drain electrode, and an opposite electrode formed on the protective layer, wherein at least part of the opposite electrode is formed substantially directly above the touch sensor active layer.
摘要翻译：公开了一种触摸传感器和包括传感器的有机发光显示器。在一个实施例中，触摸传感器包括i）衬底，ii）形成在衬底上或衬底上并包含氢离子的感测单元，iii）形成在感测单元上或上方的触摸传感器有源层，以及iv）触摸传感器源电极和触摸传感器漏电极，其电连接到触摸传感器有源层。所述触摸传感器还包括覆盖所述触摸传感器源电极和所述触摸传感器漏电极的保护层，以及形成在所述保护层上的相对电极，其中所述相对电极的至少一部分基本上直接形成在所述触摸传感器有源层的正上方。

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