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1. 发明授权

US5439551A Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes 失效
标题翻译：化学机械抛光技术和化学机械抛光工艺终点检测方法
公开(公告)号：US5439551A
公开(公告)日：1995-08-08
申请号：US205312
申请日：1994-03-02
申请人： Scott Meikle , Trung T. Doan
发明人： Scott Meikle , Trung T. Doan
IPC分类号： B24B37/04 , H01L21/304
CPC分类号： B24B37/013 , B24B37/042 , B24B49/003
摘要： A semiconductor processing method of detecting polishing end point in a chemical-mechanical polishing planarization process includes the following steps: a) chemical-mechanical polishing an outer surface of a semiconductor substrate using a chemical-mechanical polishing pad; b) during such chemical-mechanical polishing, measuring sound waves emanating from the chemical-mechanical polishing action of the substrate against the pad; c) detecting a change in the sound waves as the surface being chemical-mechanical polished becomes substantially planar; and d) ceasing chemical-mechanical polishing upon detection of the change. Alternately instead of ceasing chemical-mechanical polishing, a mechanical polishing process operational parameter could be changed upon detection of the change and then continuing mechanical polishing with the changed operational parameter. In another aspect of the invention, first and second layers to be polished are provided on a semiconductor wafer. The second layer is in situ measured during polishing to determine its substantial complete removal from the substrate by chemical-mechanical polishing. Such in situ measuring of the second layer during polishing might be conducted by a number of different manners, such as by acoustically, chemically, optically or others. Also claimed is a polishing apparatus for acoustically monitoring polishing action.
摘要翻译：在化学机械抛光平面化处理中检测抛光终点的半导体处理方法包括以下步骤：a）使用化学机械抛光垫对半导体衬底的外表面进行化学机械抛光; b）在这种化学机械抛光期间，测量从衬底的化学机械抛光作用发出的声波对衬垫; c）当化学机械抛光的表面变得基本平坦时，检测声波的变化; 和d）在检测到变化后停止化学机械抛光。或者替代停止化学机械抛光，可以在检测到变化后改变机械抛光工艺操作参数，然后用改变的操作参数继续机械抛光。在本发明的另一方面，将待抛光的第一和第二层设置在半导体晶片上。在抛光过程中原位测量第二层，以确定其通过化学机械抛光从基材中大量完全除去。在抛光期间原位测量第二层可以通过多种不同的方式进行，例如通过声学，化学，光学或其它方式进行。还要求的是用于声学监测抛光动作的抛光装置。

2. 发明授权

US5395801A Chemical-mechanical polishing processes of planarizing insulating layers 失效
标题翻译：平面化绝缘层的化学机械抛光工艺
公开(公告)号：US5395801A
公开(公告)日：1995-03-07
申请号：US130117
申请日：1993-09-29
申请人： Trung T. Doan , Scott Meikle
发明人： Trung T. Doan , Scott Meikle
IPC分类号： B24B1/00 , H01L21/304 , H01L21/3105 , H01L21/768 , H01L21/302 , H01L21/463
CPC分类号： H01L21/31053 , H01L21/76819
摘要： A semiconductor processing method of providing and planarizing an insulating layer on a semiconductor wafer includes the following sequential steps: a) providing a conformal layer of insulating material to a first thickness over a semiconductor wafer having non-planar topography; b) providing a CMP polishing protective layer over the conformal layer to a second thickness, the protective layer being of different composition than the conformal layer; and c) chemical-mechanical polishing the protective layer and conformal layer in a single CMP step using a single CMP slurry and under conditions which in combination with the slurry remove the conformal layer material at a faster rate than the protective layer material, the protective layer upon outward exposure of conformal layer material in high topographical areas restricting material removal from low topographical areas during such chemical-mechanical polishing. Alternately, the protective layer and conformal layer are CMPed in at least two steps using first and second respective CMP slurries. The first CMP step and slurry remove outermost portions of the protective layer in a manner which is substantially selective to the underlying conformal layer to outwardly expose conformal layer material in high topographical areas. The second CMP step and slurry remove the conformal layer material at a faster rate than the protective layer material. The protective layer upon outward exposure of conformal layer material in high topographical areas restricts material removal from low topographical areas during such second CMP step.
摘要翻译：在半导体晶片上提供和平坦化绝缘层的半导体处理方法包括以下顺序步骤：a）在具有非平面形貌的半导体晶片上提供具有第一厚度的绝缘材料的共形层; b）在所述共形层上提供CMP抛光保护层至第二厚度，所述保护层具有不同于所述共形层的组成; 和c）在单个CMP步骤中使用单个CMP浆料在保护层和共形层上进行化学机械抛光，在与浆料组合的情况下，以比保护层材料更快的速率去除保形层材料，保护层在保护层材料在高地形区域中向外暴露时，限制在这种化学机械抛光期间从低地形区域移除材料。或者，使用第一和第二各自的CMP浆料，至少两个步骤将保护层和共形层CMP化。第一CMP步骤和浆料以对下面的共形层基本上选择性的方式去除保护层的最外部分，以在高地形区域中向外暴露共形层材料。第二CMP步骤和浆料以比保护层材料更快的速率除去保形层材料。保护层在保形层材料向外暴露于高地形区域时，限制了在这样的第二CMP步骤期间从低地形区域的材料去除。

3. 发明申请

US20060090343A1 Member for reinforcing, sealing or baffling and reinforcement system formed therewith 审中-公开
标题翻译：与其形成的加强，密封或挡板和加强系统的构件
公开(公告)号：US20060090343A1
公开(公告)日：2006-05-04
申请号：US11254129
申请日：2005-10-19
申请人： Jon Riley , David Carlson , Scott Meikle , Gary Hulett
发明人： Jon Riley , David Carlson , Scott Meikle , Gary Hulett
IPC分类号： B21D53/88
CPC分类号： B21D53/88 , B21D47/01 , Y10T29/49622 , Y10T29/49632
摘要： A member is provided for reinforcing, sealing or baffling structures of articles of manufacture such as automotive vehicles. The member typically includes a carrier member that is typically at least partially formed of a metal. The member also typically includes an expandable material disposed on the carrier member.
摘要翻译：提供用于加强，密封或挡板结构的构件，例如机动车辆。该构件通常包括通常至少部分地由金属形成的载体构件。该构件通常还包括布置在承载构件上的可膨胀材料。

4. 发明授权

US06709317B2 Method and apparatus for uniformly planarizing a microelectronic substrate 失效
标题翻译：用于均匀平面化微电子衬底的方法和装置
公开(公告)号：US06709317B2
公开(公告)日：2004-03-23
申请号：US10122699
申请日：2002-04-11
申请人： Stephen J. Kramer , Scott Meikle
发明人： Stephen J. Kramer , Scott Meikle
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24B37/26 , B24D3/24 , H01L21/31053 , Y10S977/777 , Y10S977/883 , Y10S977/888
摘要： A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.
摘要翻译：一种用于平面化微电子衬底的方法和装置。该装置可以包括具有相对硬的抛光垫的平坦化介质和设置在抛光垫的大致无孔的平坦化表面上的平坦化液体。平坦化液体可以包括具有通常平滑的外表面的胶体颗粒的胶态悬浮液。胶体颗粒可以具有各种形状，包括球形，圆柱形，立方体形，六边形等。胶体颗粒可以由各种材料形成，包括二氧化硅，氧化锰和氧化铈。

5. 发明授权

US06509272B2 Planarization method using fluid composition including chelating agents 失效
标题翻译：使用包含螯合剂的流体组合物的平面化方法
公开(公告)号：US06509272B2
公开(公告)日：2003-01-21
申请号：US09805343
申请日：2001-03-13
申请人： John Skrovan , Scott Meikle
发明人： John Skrovan , Scott Meikle
IPC分类号： H01L21302
CPC分类号： H01L21/02024 , C09G1/02 , H01L21/31053
摘要： A planarization method including the provision of a wafer having a wafer surface. A pad is positioned for contact with the wafer surface and the wafer surface is planarized using the pad and a fluid composition that includes a chelating agent. The chelating agent is a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). A fluid composition for use in planarization of a surface of a wafer includes a chemically interactive component that interacts with the surface of the wafer and a chelating agent for reducing the metal ion contamination of the wafer during planarization. The chelating agent may be one of a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). Further, the fluid composition may include an abrasive component.
摘要翻译：一种平面化方法，包括提供具有晶片表面的晶片。定位垫以与晶片表面接触，并且使用垫和包含螯合剂的流体组合物将晶片表面平坦化。螯合剂是水溶性多齿螯合剂，优选水溶性二齿离子螯合剂，更优选1,2-亚乙基二膦酸（EDP）。用于平坦化晶片表面的流体组合物包括与晶片表面相互作用的化学相互作用的组分和用于在平坦化期间减少晶片的金属离子污染的螯合剂。螯合剂可以是水溶性多齿螯合剂之一，优选水溶性二齿离子螯合剂，更优选1,2-亚乙基二膦酸（EDP）。此外，流体组合物可以包括磨料组分。

6. 发明授权

US06416401B1 Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives 有权
公开(公告)号：US06416401B1
公开(公告)日：2002-07-09
申请号：US09692896
申请日：2000-10-19
申请人： Gundu M. Sabde , Scott Meikle
发明人： Gundu M. Sabde , Scott Meikle
IPC分类号： B24B1100
CPC分类号： B24B37/245 , B24B21/004 , B24B37/04 , B24D11/00 , H01L21/3212 , H01L21/7684 , Y10S977/777 , Y10S977/883 , Y10S977/888
摘要： A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a fixed abrasive polishing pad having metal abrasive elements selected to be a compound of metal in the substrate. Alternatively, the metal abrasive elements can include a refractory metal where the substrate includes a refractory metal. Where the substrate includes two metals, the abrasive elements can be selected to planarize the first metal at a rate that is less than approximately twice the rate at which it planarizes the second metal. A single fixed abrasive polishing pad and a single planarizing liquid can be used to planarize both metals.

7. 发明授权

US06379225B1 Planarization process with abrasive polishing slurry that is selective to a planarized surface 有权
标题翻译：使用对平坦化表面有选择性的研磨抛光浆料进行平面化处理
公开(公告)号：US06379225B1
公开(公告)日：2002-04-30
申请号：US09569921
申请日：2000-05-11
申请人： Karl M. Robinson , Guy Hudson , Scott Meikle
发明人： Karl M. Robinson , Guy Hudson , Scott Meikle
IPC分类号： B24B100
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： Parameters of an improved planarization process for a semiconductor structure surface are optimized to cause a height reduction rate of the surface that adjusts downward by a factor of at least three once the surface becomes substantially planarized. Localized over-polishing is substantially eliminated by the acquired selectivity of the planarization process to planarized surfaces. One embodiment of the improved planarization process comprises the use of a polishing slurry including a plurality of abrasive particles of a size selected that the polishing of a surface having a height causes a surface height reduction rate that drops once the surface becomes planarized. Preferred abrasive particle sizes are about 50 nm in mean diameter or less.
摘要翻译：优化用于半导体结构表面的改进的平坦化工艺的参数被优化，以使表面的高度减小率在表面变得基本平坦化之后向下调整至少三倍。通过对平坦化表面的平坦化处理获得的选择性，基本上消除了局部超抛光。改进的平坦化方法的一个实施方案包括使用抛光浆料，其包括多个磨粒，其尺寸选择为：一旦表面平坦化，具有高度的表面的抛光导致降低表面高度的表面高度。优选的磨粒尺寸为平均直径为约50nm或更小。

8. 发明授权

US08557132B2 Inline monitoring of pad loading for CuCMP and developing an endpoint technique for cleaning 有权
公开(公告)号：US08557132B2
公开(公告)日：2013-10-15
申请号：US10842363
申请日：2004-05-10
申请人： Dinesh Chopra , Scott Meikle
发明人： Dinesh Chopra , Scott Meikle
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： B24B53/017 , B08B3/00 , H01L21/3212
摘要： A system of cleaning a CMP pad used for removing copper from a substrate, the system comprising an abrasive cleaning pad, a cleaning solution delivery system that delivers a cleaning solution, an analyzing system that monitors the characteristics of the cleaning solution optically and chemically, and a carriage that allows the analyzing system to monitor the cleaning solution at a plurality of locations on the CMP pad. The use of the abrasive cleaning pad and the cleaning solution removes contaminants from the CMP pad, and the contaminants are dissolved in the cleaning solution. By measuring the concentration of contaminants in the cleaning solution, the condition of the CMP pad can be monitored. To measure the concentration of the contaminants, changes in the refractive index and absorption of light in the cleaning solution are measured, wherein the refractive index and absorption depend on the concentration of the contaminants. The concentration of the contaminants in the cleaning solution is also measured chemically. Knowing the actual condition of the CMP pad during the cleaning process allows for improved condition of the CMP pad.

9. 发明申请

US20060249397A1 Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium 失效
公开(公告)号：US20060249397A1
公开(公告)日：2006-11-09
申请号：US11482586
申请日：2006-07-06
申请人： Whonchee Lee , Scott Moore , Scott Meikle
发明人： Whonchee Lee , Scott Moore , Scott Meikle
IPC分类号： B23H7/14
CPC分类号： C25F7/00 , B23H5/08 , C25F3/14
摘要： Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.

10. 发明申请

US20050153632A1 Methods of preparing semiconductor workpiece process fluid 审中-公开
标题翻译：制备半导体工件工艺流体的方法
公开(公告)号：US20050153632A1
公开(公告)日：2005-07-14
申请号：US11068654
申请日：2005-02-23
申请人： Scott Moore , Scott Meikle , Magdel Crum
发明人： Scott Moore , Scott Meikle , Magdel Crum
IPC分类号： B24B37/04 , B24B49/10 , B24B57/02 , B24B49/00
CPC分类号： B24B37/04 , B24B49/10 , B24B57/02
摘要： Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.
摘要翻译：提供半导体处理器系统，配置为提供半导体工件工艺流体的系统，半导体工件加工方法，半导体工件加工流体的制备方法以及将半导体工件加工流体输送到半导体处理器的方法。本发明的一个方面提供一种半导体处理器系统，其包括适于使用工艺流体处理至少一个半导体工件的处理室; 连接处理室并被配置为接收处理流体的连接; 耦合所述连接并被配置为输出指示所述过程流体的信号的传感器; 以及与所述传感器耦合并被配置为响应于所述信号来控制所述半导体处理器系统的至少一个操作的控制系统。

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