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    • 1. 发明申请
    • Semiconductor processor control systems
    • 半导体处理器控制系统
    • US20050185180A1
    • 2005-08-25
    • US11068653
    • 2005-02-23
    • Scott MooreScott MeikleMagdel Crum
    • Scott MooreScott MeikleMagdel Crum
    • B24B37/04B24B49/10B24B57/02G01N21/00G01N31/00G01N33/00H01L21/8234
    • B24B37/04B24B49/10B24B57/02
    • Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.
    • 提供半导体处理器系统,配置为提供半导体工件工艺流体的系统,半导体工件加工方法,半导体工件加工流体的制备方法以及将半导体工件加工流体输送到半导体处理器的方法。 本发明的一个方面提供一种半导体处理器系统,其包括适于使用工艺流体处理至少一个半导体工件的处理室; 连接处理室并被配置为接收处理流体的连接; 耦合所述连接并被配置为输出指示所述过程流体的信号的传感器; 以及与所述传感器耦合并被配置为响应于所述信号来控制所述半导体处理器系统的至少一个操作的控制系统。
    • 3. 发明申请
    • Methods of preparing semiconductor workpiece process fluid
    • 制备半导体工件工艺流体的方法
    • US20050153632A1
    • 2005-07-14
    • US11068654
    • 2005-02-23
    • Scott MooreScott MeikleMagdel Crum
    • Scott MooreScott MeikleMagdel Crum
    • B24B37/04B24B49/10B24B57/02B24B49/00
    • B24B37/04B24B49/10B24B57/02
    • Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.
    • 提供半导体处理器系统,配置为提供半导体工件工艺流体的系统,半导体工件加工方法,半导体工件加工流体的制备方法以及将半导体工件加工流体输送到半导体处理器的方法。 本发明的一个方面提供一种半导体处理器系统,其包括适于使用工艺流体处理至少一个半导体工件的处理室; 连接处理室并被配置为接收处理流体的连接; 耦合所述连接并被配置为输出指示所述过程流体的信号的传感器; 以及与所述传感器耦合并被配置为响应于所述信号来控制所述半导体处理器系统的至少一个操作的控制系统。
    • 5. 发明申请
    • METHODS AND APPARATUS FOR ELECTROMECHANICALLY AND/OR ELECTROCHEMICALLY-MECHANICALLY REMOVING CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE
    • 用于电化学和/或电化学机械地从微电子基板去除导电材料的方法和装置
    • US20070111641A1
    • 2007-05-17
    • US11616683
    • 2006-12-27
    • Whonchee LeeScott MooreScott Meikle
    • Whonchee LeeScott MooreScott Meikle
    • B24B7/30B24B51/00
    • B23H5/08B24B37/042C25F3/02C25F7/00
    • Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.
    • 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间,并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。
    • 9. 发明申请
    • Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
    • 从微电子衬底电气和/或化学机械去除导电材料的方法和装置
    • US20050034999A1
    • 2005-02-17
    • US10926202
    • 2004-08-24
    • Whonchee LeeScott MeikleScott Moore
    • Whonchee LeeScott MeikleScott Moore
    • B23H3/00B23H5/08B24B1/00B24B7/19H01L21/8242H01L29/00
    • B23H5/08B24B1/002
    • A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.
    • 一种用于从微电子衬底去除导电材料的方法和装置。 在一个实施例中,支撑构件相对于材料去除介质支撑微电子衬底,其可以包括第一和第二电极以及抛光垫。 一个或多个电解质设置在电极和微电子衬底之间以将电极电连接到微电子衬底。 然后将电极耦合到电流从基板电除去导电材料的变化的电流源。 微电子衬底和/或电极可以相对于彼此移动以相对于微电子衬底的选定部分定位电极,和/或抛光微电子衬底。 材料去除介质可以从微电子衬底和/或电极去除在该过程期间形成的气体。 介质还可以具有不同的第一和第二电特性,以提供与微电子衬底的不同区域的不同水平的电耦合。