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1. 发明申请

US20130319849A1 PREPARATION OF LAMELLAE FOR TEM VIEWING 审中-公开
标题翻译：用于TEM观察的LAMELLAE的制备
公开(公告)号：US20130319849A1
公开(公告)日：2013-12-05
申请号：US13899278
申请日：2013-05-21
申请人： Scott Edward Fuller , Brian Roberts Routh, JR. , Michael Moriarty
发明人： Scott Edward Fuller , Brian Roberts Routh, JR. , Michael Moriarty
IPC分类号： H01J37/302 , G01N1/32
CPC分类号： H01J37/3026 , G01N1/32 , H01J2237/31745
摘要： A method and apparatus for producing thin lamella for TEM observation. The steps of the method are robust and can be used to produce lamella in an automated process. In some embodiments, a protective coating have a sputtering rate matched to the sputtering rate of the work piece is deposited before forming the lamella. In some embodiments, the bottom of the lamella slopes away from the feature of interest, which keeps the lamella stable and reduces movement during thinning. In some embodiments, a fiducial is used to position the beam for the final thinning, instead of using an edge of the lamella. In some embodiments, the tabs are completed after high ion energy final thinning to keep the lamella more stable. In some embodiments, a defocused low ion energy and pattern refresh delay is used for the final cut to reduce deformation of the lamella.
摘要翻译：用于TEM观察的薄片制造方法和装置。该方法的步骤是稳健的并且可以用于在自动化过程中产生薄片。在一些实施例中，在形成薄片之前，保护涂层具有与工件的溅射速率相匹配的溅射速率。在一些实施例中，薄片的底部远离感兴趣的特征，其保持薄片稳定并减少变薄期间的运动。在一些实施例中，使用基准来定位光束以进行最终的变薄，而不是使用薄片的边缘。在一些实施方案中，在高离子能量最终稀化之后，突片完成以保持薄片更稳定。在一些实施例中，散焦的低离子能量和图案刷新延迟用于最终切割以减小薄片的变形。

2. 发明授权

US10068749B2 Preparation of lamellae for TEM viewing 有权
公开(公告)号：US10068749B2
公开(公告)日：2018-09-04
申请号：US13899278
申请日：2013-05-21
申请人： Scott Edward Fuller , Brian Roberts Routh, Jr. , Michael Moriarty
发明人： Scott Edward Fuller , Brian Roberts Routh, Jr. , Michael Moriarty
IPC分类号： C23C14/00 , C23C14/32 , H01J37/302 , G01N1/32
摘要： A method and apparatus for producing thin lamella for TEM observation. The steps of the method are robust and can be used to produce lamella in an automated process. In some embodiments, a protective coating have a sputtering rate matched to the sputtering rate of the work piece is deposited before forming the lamella. In some embodiments, the bottom of the lamella slopes away from the feature of interest, which keeps the lamella stable and reduces movement during thinning. In some embodiments, a fiducial is used to position the beam for the final thinning, instead of using an edge of the lamella. In some embodiments, the tabs are completed after high ion energy final thinning to keep the lamella more stable. In some embodiments, a defocused low ion energy and pattern refresh delay is used for the final cut to reduce deformation of the lamella.

3. 发明授权

US10204762B2 Endpointing for focused ion beam processing 有权
公开(公告)号：US10204762B2
公开(公告)日：2019-02-12
申请号：US14766953
申请日：2012-07-16
申请人： Scott Edward Fuller , Jason Donald , Termsupt Seemuntchaiboworn
发明人： Scott Edward Fuller , Jason Donald , Termsupt Seemuntchaiboworn
IPC分类号： H01J37/317 , H01J37/304 , H01J37/22 , H01J37/28 , H01J37/30 , H01J37/305
摘要： To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a pre-determined criterion is met.

4. 发明授权

US08502172B1 Three dimensional fiducial 有权
标题翻译：三维基准
公开(公告)号：US08502172B1
公开(公告)日：2013-08-06
申请号：US13533870
申请日：2012-06-26
申请人： Cliff Bugge , Greg Clark , Todd Hanson , Scott Edward Fuller , Jason Donald
发明人： Cliff Bugge , Greg Clark , Todd Hanson , Scott Edward Fuller , Jason Donald
IPC分类号： H01J37/30
CPC分类号： H01J37/30 , H01J37/28 , H01J37/3045 , H01J2237/2811 , H01J2237/31732 , H01J2237/31745 , H01J2237/31749 , Y10T428/24488 , Y10T428/24802
摘要： A method and system for forming and using a fiducial on a sample to locate an area of interest on the sample, the method comprising forming a fiducial by depositing a block of material on a sample proximal to an area of interest on the sample, the block of material extending from the surface of the sample to a detectable extent above the surface of the sample; and milling, using a charged particle beam, a predetermined pattern into at least two exposed faces of the block of material; subsequent to forming the fiducial, detecting the location of the area of interest by detecting the location of the fiducial; and subsequent to detecting the location of the area of interest, imaging or milling the area of interest with a charged particle beam.
摘要翻译：一种用于在样品上形成和使用基准以定位样品上的感兴趣区域的方法和系统，所述方法包括通过在样品上靠近感兴趣区域的样品上沉积材料块形成基准，所述块的材料从样品的表面延伸到样品表面上方的可检测范围; 并使用带电粒子束将预定图案研磨成材料块的至少两个暴露面; 在形成基准之后，通过检测基准的位置来检测感兴趣区域的位置; 并且随后检测感兴趣区域的位置，用带电粒子束成像或研磨感兴趣区域。

5. 发明授权

US07208249B2 Method of producing a patterned photoresist used to prepare high performance photomasks 有权
标题翻译：制备用于制备高性能光掩模的图案化光致抗蚀剂的方法
公开(公告)号：US07208249B2
公开(公告)日：2007-04-24
申请号：US10261972
申请日：2002-09-30
申请人： Melvin Warren Montgomery , Alex Buxbaum , Scott Edward Fuller , Cecilia Annette Montgomery
发明人： Melvin Warren Montgomery , Alex Buxbaum , Scott Edward Fuller , Cecilia Annette Montgomery
IPC分类号： G03F9/00 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0392 , G03F7/0395 , G03F7/3021 , G03F7/322
摘要： We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.
摘要翻译：我们能够显着降低关键尺寸与图案化光刻胶中特征的关键尺寸的变化，其中图案化的光致抗蚀剂在制造用于半导体处理的掩模版（光掩模）期间产生。维持使用直接写入过程成像的图案化光刻胶特征的目标临界尺寸的能力取决于使用光致抗蚀剂粘合剂树脂体系，其提供足够致密的结构以空间阻碍光致酸不稳定基团在照射之后的运动组（图案的写作）。重要的是，用于产生图案的光酸基团需要使其仅在高于约70℃，优选在110℃至150℃范围内的温度下活化。进一步改进通过在开发期间控制变量的组合来实现通过掩模版表面的显影光致抗蚀剂特征尺寸的均匀性。

6. 发明申请

US20160126060A1 ENDPOINTING FOR FOCUSED ION BEAM PROCESSING 审中-公开
标题翻译：聚焦离子束加工的终点
公开(公告)号：US20160126060A1
公开(公告)日：2016-05-05
申请号：US14766953
申请日：2012-07-16
申请人： Scott Edward Fuller , Jason Donald , Termsupt Seemuntchaiboworn
发明人： Scott Edward Fuller , Jason Donald , Termsupt Seemuntchaiboworn
IPC分类号： H01J37/317 , H01J37/28 , H01J37/22 , H01J37/30
CPC分类号： H01J37/317 , H01J37/22 , H01J37/28 , H01J37/3005 , H01J37/304 , H01J37/3056 , H01J2237/08 , H01J2237/24578 , H01J2237/2814 , H01J2237/30466 , H01J2237/31745 , H01J2237/31749
摘要： To expose a desired feature, focused ion beam milling of thin slices from a cross section alternate with forming a scanning electron image of each newly exposed cross section. Milling is stopped when automatic analysis of an electron beam image of the newly exposed cross section shows that a pre-determined criterion is met.
摘要翻译：为了暴露所需的特征，从横截面的薄片的聚焦离子束研磨与形成每个新曝光的横截面的扫描电子图像交替。当新近曝光的横截面的电子束图像的自动分析显示满足预定标准时，停止铣削。

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