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    • 4. 发明申请
    • PREPARATION OF LAMELLAE FOR TEM VIEWING
    • 用于TEM观察的LAMELLAE的制备
    • US20130319849A1
    • 2013-12-05
    • US13899278
    • 2013-05-21
    • Scott Edward FullerBrian Roberts Routh, JR.Michael Moriarty
    • Scott Edward FullerBrian Roberts Routh, JR.Michael Moriarty
    • H01J37/302G01N1/32
    • H01J37/3026G01N1/32H01J2237/31745
    • A method and apparatus for producing thin lamella for TEM observation. The steps of the method are robust and can be used to produce lamella in an automated process. In some embodiments, a protective coating have a sputtering rate matched to the sputtering rate of the work piece is deposited before forming the lamella. In some embodiments, the bottom of the lamella slopes away from the feature of interest, which keeps the lamella stable and reduces movement during thinning. In some embodiments, a fiducial is used to position the beam for the final thinning, instead of using an edge of the lamella. In some embodiments, the tabs are completed after high ion energy final thinning to keep the lamella more stable. In some embodiments, a defocused low ion energy and pattern refresh delay is used for the final cut to reduce deformation of the lamella.
    • 用于TEM观察的薄片制造方法和装置。 该方法的步骤是稳健的并且可以用于在自动化过程中产生薄片。 在一些实施例中,在形成薄片之前,保护涂层具有与工件的溅射速率相匹配的溅射速率。 在一些实施例中,薄片的底部远离感兴趣的特征,其保持薄片稳定并减少变薄期间的运动。 在一些实施例中,使用基准来定位光束以进行最终的变薄,而不是使用薄片的边缘。 在一些实施方案中,在高离子能量最终稀化之后,突片完成以保持薄片更稳定。 在一些实施例中,散焦的低离子能量和图案刷新延迟用于最终切割以减小薄片的变形。
    • 5. 发明授权
    • Method of producing a patterned photoresist used to prepare high performance photomasks
    • 制备用于制备高性能光掩模的图案化光致抗蚀剂的方法
    • US07208249B2
    • 2007-04-24
    • US10261972
    • 2002-09-30
    • Melvin Warren MontgomeryAlex BuxbaumScott Edward FullerCecilia Annette Montgomery
    • Melvin Warren MontgomeryAlex BuxbaumScott Edward FullerCecilia Annette Montgomery
    • G03F9/00G03F7/30
    • G03F7/0397G03F7/0392G03F7/0395G03F7/3021G03F7/322
    • We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.
    • 我们能够显着降低关键尺寸与图案化光刻胶中特征的关键尺寸的变化,其中图案化的光致抗蚀剂在制造用于半导体处理的掩模版(光掩模)期间产生。 维持使用直接写入过程成像的图案化光刻胶特征的目标临界尺寸的能力取决于使用光致抗蚀剂粘合剂树脂体系,其提供足够致密的结构以空间阻碍光致酸不稳定基团在照射之后的运动 组(图案的写作)。 重要的是,用于产生图案的光酸基团需要使其仅在高于约70℃,优选在110℃至150℃范围内的温度下活化。进一步改进 通过在开发期间控制变量的组合来实现通过掩模版表面的显影光致抗蚀剂特征尺寸的均匀性。