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    • 3. 发明授权
    • Superscalar processor with a multi-port reorder buffer
    • 超标量处理器带有多端口重排序缓冲器
    • US5574935A
    • 1996-11-12
    • US346078
    • 1994-11-29
    • Rohit A. VidwansWesley D. McCulloughJoel HuangJoseph F. Rohlman
    • Rohit A. VidwansWesley D. McCulloughJoel HuangJoseph F. Rohlman
    • G06F9/30G06F9/318G06F9/38G11C8/16G06F12/00
    • G06F9/30141G06F9/3017G06F9/384G06F9/3885G11C8/16
    • A multi-port register contains a plurality of cells each capable of storing at least two states. The cells contain at least one read and one write port. Each read port contains a corresponding read enable line, a read data line, and a read transistor stack. Each write port contains a corresponding write enable line, write data line, and a write transistor stack. The read data line is coupled to a pre-charge circuit that charges the read data line to a predetermined threshold level prior to reading the contents of the cell. The read transistor stack couples the output of the cell to the corresponding read data line such that the read data line is pulled to ground when the cell stores a first logic state, and the read data line retains the pre-determined voltage state when the cell stores the second logic state. The write transistor stack couples the write data line to the cell such that writing a first logic state on the write data line pulls the input to the cell to a low logic state, and writing a second logic state on the write data line drives the input to the cell to a high logic state. The multi-port register has application for use in a superscalar microprocessor performing out-of-order dispatch and execution and speculative execution.
    • 多端口寄存器包含多个能够存储至少两个状态的单元。 单元格至少包含一个读写端口。 每个读取端口包含对应的读使能线,读数据线和读晶体管堆。 每个写入端口包含相应的写入使能线,写入数据线和写入晶体管堆叠。 读取数据线耦合到在读取单元的内容之前将读取数据线充电到预定阈值电平的预充电电路。 读取晶体管堆叠将单元的输出耦合到对应的读取数据线,使得当单元存储第一逻辑状态时,读取的数据线被拉到地,并且读取的数据线保持预定的电压状态,当单元 存储第二个逻辑状态。 写晶体管堆叠将写数据线耦合到单元,使得在写数据线上写入第一逻辑状态将单元的输入拉到低逻辑状态,并且在写数据线上写入第二逻辑状态驱动输入 到单元到高逻辑状态。 多端口寄存器具有用于执行无序调度和执行和推测执行的超标量微处理器的应用。
    • 4. 发明授权
    • Multi-port register
    • 多端口寄存器
    • US5777928A
    • 1998-07-07
    • US785575
    • 1997-01-21
    • Rohit A. VidwansWesley D. McCulloughJoel HuangJoseph F. Rohlman
    • Rohit A. VidwansWesley D. McCulloughJoel HuangJoseph F. Rohlman
    • G06F9/30G06F9/318G06F9/38G11C8/16G11C7/00
    • G06F9/30141G06F9/3017G06F9/384G06F9/3885G11C8/16
    • A multi-port register contains a plurality of cells each capable of storing at least two states. The cells contain at least one read and one write port. Each read port contains a corresponding read enable line, a read data line, and a read transistor stack. Each write port contains a corresponding write enable line, write data line, and a write transistor stack. The read data line is coupled to a pre-charge circuit that charges the read data line to a pre-determined threshold level prior to reading the contents of the cell. The read transistor stack couples the output of the cell to the corresponding read data line such that the read data line is pulled to ground when the cell stores a first logic state, and the read data line retains the pre-determined voltage state when the cell stores the second logic state. The write transistor stack couples the write data line to the cell such that writing a first logic state on the write data line pulls the input to the cell to a low logic state, and writing a second logic state on the write data line drives the input to the cell to a high logic state. The multi-port register has application for use in a superscalar microprocessor performing out-of-order dispatch and execution and speculative execution.
    • 多端口寄存器包含多个能够存储至少两个状态的单元。 单元格至少包含一个读写端口。 每个读取端口包含对应的读使能线,读数据线和读晶体管堆。 每个写入端口包含相应的写入使能线,写入数据线和写入晶体管堆叠。 读取数据线耦合到在读取单元的内容之前将读取数据线充电到预定阈值级别的预充电电路。 读取晶体管堆叠将单元的输出耦合到对应的读取数据线,使得当单元存储第一逻辑状态时,读取的数据线被拉到地,并且读取的数据线保持预定的电压状态,当单元 存储第二个逻辑状态。 写晶体管堆叠将写数据线耦合到单元,使得在写数据线上写入第一逻辑状态将单元的输入拉到低逻辑状态,并且在写数据线上写入第二逻辑状态驱动输入 到单元到高逻辑状态。 多端口寄存器具有用于执行无序调度和执行和推测执行的超标量微处理器的应用。