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1. 发明专利

JP2007284343A Device and method for production of single crystal or polycrystalline material, in particular polycrystalline silicon 有权
标题翻译：用于生产单晶或多晶材料，特别是多晶硅的装置和方法
公开(公告)号：JP2007284343A
公开(公告)日：2007-11-01
申请号：JP2007099038
申请日：2007-04-05
申请人： Schott Ag , ショットアクチエンゲゼルシャフトSchott AG
发明人： MUELLER MATTHIAS , FINKBEINER MARKUS , SAHR UWE , SCHWIRTLICH INGO , CLAUSS MICHAEL
IPC分类号： C01B33/021 , C30B11/00 , C30B29/06 , H01L31/04
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for production of single crystals or polycrystalline materials using a vertical-gradient-freeze method, in particular silicon for applications in photovoltaics; and to decrease the amount of wastage by constituting a crucible cross section in polygonal, particularly in rectangular or square-shape. SOLUTION: Around the circumference of the crucible, a flat or planar heating element in particular jacket heater, which generates an inhomogeneous temperature profile is installed. This temperature profile is made to correspond to the temperature gradient formed in the center of the crucible. The heat output of the flat heating element decreases as going from the top end to the bottom end of the crucible. The flat heating element comprises a plurality of parallel heating webs, extending in a vertical or horizontal meandering course. The heat output from the webs is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering course of the webs. The flat heating element can be formed from a plurality of interconnected individual segments. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供使用垂直梯度冷冻法，特别是用于光伏电池的硅的单晶或多晶材料的制造方法和装置; 并且通过构成多边形，特别是矩形或正方形的坩埚横截面来减少浪费量。解决方案：围绕坩埚的圆周，安装平坦或平面加热元件，特别是夹套加热器，其产生不均匀的温度分布。使该温度分布对应于在坩埚中心形成的温度梯度。扁平加热元件的热量输出随坩埚的顶端到底端而降低。扁平加热元件包括多个平行的加热幅材，其在垂直或水平的曲折过程中延伸。通过改变导体横截面来设定来自腹板的热量输出。为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域处提供横截面的收缩。扁平加热元件可以由多个相互连接的各个部分形成。版权所有（C）2008，JPO＆INPIT

2. 发明专利

DE102013107189A1 Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben 未知
公开(公告)号：DE102013107189A1
公开(公告)日：2014-09-25
申请号：DE102013107189
申请日：2013-07-08
申请人： SCHOTT AG
发明人： VOITSCH ANDREAS , LEMKE CHRISTIAN , JOCKEL DIETMAR , MÜLLER MATTHIAS , KUDLA CHRISTIAN , SEIDL ALBRECHT DR , SAHR UWE
IPC分类号： C30B29/06 , C30B11/02
摘要： Die Erfindung betrifft die Verwendung von mono- oder quasimonokristallinem Silizium, welches bevorzugt nach dem Verfahren der gerichteten Erstarrung hergestellt wird, für hochohmige optische Bauteile für Anwendungen im infraroten Spektralbereich oder für hochohmige Funktionsbauteile in Anlagen zur Halbleiterprozessierung, insbesondere für Showerheads. Die Blanks weisen erfindungsgemäß eine Konzentration von Einzelversetzungen im Bereich von 102 bis 106 cm–2 im seinem sowohl versetzungscluster- als auch kleinwinkelkorngrenzenfreien Volumen und einen spezifischen Widerstand von größer als 5 &OHgr;cm auf, können Fremdkörner, Zwillingskorngrenzen oder Cluster an Versetzungen oder Kleinwinkelkorngrenzen enthalten und sind somit kostengünstiger und effizienter hergestellbar als Blanks aus monokristallinem Silizium nach den Czochralski oder Float Zone Verfahren.

3. 发明专利

DE102006017622A1 Manufacturing multi-crystalline silicon comprises placing detachable upper section at an upper edge of crucible furnace to build container structure, filling the container structure with silicon filling, and heating the container structure 未知
公开(公告)号：DE102006017622A1
公开(公告)日：2007-10-18
申请号：DE102006017622
申请日：2006-04-12
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , SCHWIRTLICH INGO , MARTIN REGINA , SAHR UWE
IPC分类号： C30B11/00 , C30B28/06 , C30B29/06
摘要： The manufacturing multi-crystalline silicon by vertical-gradient-freeze procedure, comprises placing a detachable upper section at an upper edge of a crucible furnace to build a container structure, filling the container structure with silicon filling made of particulate or granular silicon up to a predetermined height, that is larger than the height of the crucible furnace, heating the container structure for melting up the silicon filling to liquid silicon, and cooling the container structure and solidifying the liquid silicon. The manufacturing multi-crystalline silicon by vertical-gradient-freeze procedure, comprises placing a detachable upper section at an upper edge of a crucible furnace to build a container structure, filling the container structure with silicon filling made of particulate or granular silicon up to a predetermined height, that is larger than the height of the crucible furnace, heating the container structure for melting up the silicon filling to liquid silicon, and cooling the container structure and solidifying the liquid silicon. The predetermined height is selected in such a manner that the molten liquid silicon is completely taken up within the crucible furnace. The upper section has contour, which coincides with that of the crucible furnace. A lid consists of a back-flushing gas inlet (14) and -outlet (15) placed on the removable upper section to isolate the interior of the container structure from the exterior atmosphere. Over the back-flushing gas inlet, back-flushing gas is flowed into the container structure to clean the interior of the container structure. The crucible furnace and the removable upper section are provided with perpendicularly stretching interior walls. The removable upper section is placed flushing with the upper edge of the crucible furnace. An interior circumferential edge of the removable upper section protrudes from or lies at a plane with an interior circumferential wall of the crucible furnace. The crucible furnace and the removable upper section are made from quartz. The removable upper section is supported by a fixing clamp (12) to prevent it from falling into the interior of the container. A heat insulator is placed on the upper edge of the crucible furnace between the crucible furnace and the removable upper section. The particulate or granular silicon is melted up from the upper edge of the container structure by means of a lid heater (5), so that the molten liquid silicon flows down through the silicon filling. The particulate or granular silicon is additionally melted up by means of a jacket heater (6) without heating from the bottom of the container structure. The jacket heater builds a temperature gradient from the top to the bottom of the container structure. For the filling of the container structure, firstly silicon sheets, which are sliced off from the sides of a previously manufactured silicon ingot, are arranged on the bottom of the crucible furnace and along the inner walls of the crucible furnace to partly cover the bottom and the interior walls, and then medium or fine grain are fed. After the addition of a thin layer of granular silicon, firstly large silicon structures are brought along the horizontal direction, so that they span from the middle of the crucible furnace to more or less to the interior walls of the crucible furnace and/or along the vertical direction, so that they span from the proximity to the bottom of the crucible furnace to more or less up to the upper edge of the container structure. The large silicon sheets are covered by further silicon granules. The silicon filling is covered finally by smaller pieces of silicon. The smaller silicon pieces are originate from a recycling process or cleaning process of waste materials, or are silicon fractions from previous batches or silicon wafer fractions. The crucible furnace is provided with a polygonal cross-section/rectangular or square cross-section. The back-flushing gas is free from carbon monoxide and/or carbon dioxide and pure argon. An independent claim is included for a device for manufacturing multi-crystalline silicon.

4. 发明专利

DE102006017622B4 未知
公开(公告)号：DE102006017622B4
公开(公告)日：2008-03-27
申请号：DE102006017622
申请日：2006-04-12
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , SCHWIRTLICH INGO , MARTIN REGINA , SAHR UWE
IPC分类号： C30B11/00 , C30B28/06 , C30B29/06

5. 发明专利

DE102006017621A1 Crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises stable crucible, and heating device for melting the silicon and exhibiting jacket heater for rejection of heat flow 未知
公开(公告)号：DE102006017621A1
公开(公告)日：2007-10-18
申请号：DE102006017621
申请日：2006-04-12
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , FINKBEINER MARKUS , SAHR UWE , SCHWIRTLICH INGO , CLAUSS MICHAEL
IPC分类号： C30B11/00 , C30B29/06
摘要： The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible. The crucible exhibits a rectangular- or square shaped cross-section. The heater comprises heating elements arranged at side surfaces of the crucible. The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible. The crucible exhibits a rectangular- or square shaped cross-section. The heater comprises heating elements arranged at side surfaces of the crucible. The jacket heater forms a heating zone, which is displayed so that a delivered heat output decreases from the upper end to the lower end, in order to maintain the temperature gradient. The heat output of the jacket heater in the longitudinal direction decreases in correspondence to the temperature gradient in the center of the crucible. The jacket heater is designed to maintain a number of even isotherms vertical to the longitudinal direction. The outer contour of the jacket heater is formed corresponding to the outer contour of the crucible, so that a distance is maintained constant between the heater and the crucible. The heating elements exhibit a meander shaped course in the longitudinal or perpendicular direction to it. The rectangular shaped bars run equidistant and parallel to each other. A conductor cross-section of the bars is constricted at the reverse regions of the meander shaped course in diagonal direction, so that the section is likely assigned to bars before or after the respective reverse regions. The constrictions of the conductor cross-section are formed at the reverse regions through a number of perforations or recesses in and/or from the bar materials that are arranged diagonally to the distributed conductor cross-section. The heating elements extending vertically to the longitudinal direction are formed as rectangular shaped bars, whose conductor cross-section increases from the upper end to the lower end in continuous or discrete steps. The conductor cross-section of the bars exhibits a number of segments, which are solvable connected together by connecting element in material fit. Non-thermal insulation is provided between the crucible wall and the jacket heater. An independent claim is included for a method for the production of single- or multi crystalline silicon based on vertical-gradient-freeze-method.

6. 发明专利

DE102013107193A1 Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben 未知
公开(公告)号：DE102013107193A1
公开(公告)日：2014-10-09
申请号：DE102013107193
申请日：2013-07-08
申请人： SCHOTT AG
发明人： VOITSCH ANDREAS , LEMKE CHRISTIAN , MÜLLER MATTHIAS , JOCKEL DIETMAR , KUDLA CHRISTIAN , SEIDL ALBRECHT , SAHR UWE
IPC分类号： C30B29/06 , C30B33/00 , H01L21/304
摘要： Die Erfindung betrifft die Verwendung von mono- oder quasimonokristallinem Silizium, welches nach dem Verfahren der gerichteten Erstarrung hergestellt wird, für Bauteile, die in der Halbleiterindustrie zur Prozessierung von Halbleitern oder Halbleiterbauelementen eingesetzt werden. Die Blanks weisen erfindungsgemäß eine Konzentration von Einzelversetzungen im Bereich von 103 bis 105 cm–2 im seinem versetzungscluster- und damit kleinwinkelkorngrenzenfreien Volumen und/oder einen spezifischen Widerstand von größer als 0,2 &OHgr;cm und kleiner 5 &OHgr;cm auf und können somit kostengünstiger und effizienter hergestellt werden.

7. 发明专利

DE502007006490D1 Vorrichtung und Verfahren zur Herstellung von kristallinen Materialien 未知
公开(公告)号：DE502007006490D1
公开(公告)日：2011-03-31
申请号：DE502007006490
申请日：2007-03-26
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , FINKBEINER MARKUS , SAHR UWE , SCHWIRTLICH INGO , CLAUSS MICHAEL
IPC分类号： C30B11/00

8. 发明专利

DE102007061704A1 未知
公开(公告)号：DE102007061704A1
公开(公告)日：2009-09-10
申请号：DE102007061704
申请日：2007-12-19
申请人： SCHOTT AG
发明人： SAHR UWE , MUELLER MATTHIAS , SCHWIRTLICH INGO
IPC分类号： C30B11/04 , C30B11/00

9. 发明专利

DE102007038851A1 未知
公开(公告)号：DE102007038851A1
公开(公告)日：2009-02-19
申请号：DE102007038851
申请日：2007-08-16
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , SAHR UWE
IPC分类号： B22D27/04 , C30B11/02
摘要： The method for producing monocrystalline silicon bodies e.g. silicon ingots in the vertical gradient freeze (VGF) procedure, comprises melting a semimetallic or metallic raw material in a melting pot (2, 4) to form a melt (3) and solidifying the melt under effect of a temperature gradient in a vertical direction and from lower end of the melting pot to its upper end to form monocrystalline metallic or semimetallic body. Before introducing the semimetallic or metallic raw material into the pot, the base of the melting pot is covered with a thin monocrystalline priming plate. The method for producing monocrystalline silicon bodies e.g. silicon ingots in the vertical gradient freeze (VGF) procedure, comprises melting a semimetallic or metallic raw material in a melting pot (2, 4) to form a melt (3) and solidifying the melt under effect of a temperature gradient in a vertical direction and from lower end of the melting pot to its upper end to form monocrystalline metallic or semimetallic body. Before introducing the semimetallic or metallic raw material into the pot, the base of the melting pot is covered with a thin monocrystalline priming plate having a crystal orientation parallel to the vertical direction of the melting pot. The temperature of the base of the melting pot is held at a temperature below the melting temperature of the raw material to prevent melting of the priming plate. The priming plate completely covers the base of the pot. The priming plate comprises inner monocrystalline priming plates, which are directly arranged together to completely cover the base of the melting pot. The priming plates have a constant thickness or different thicknesses. The priming plate is separated from the metallic or semimetallic body of a pre-load. The temperature gradient maintains an even, horizontal phase boundary between liquid and solid aggregate condition of the semimetal or metal. A small average section of the base of the melting pot is covered with the priming plate to begin the production of the pre-load. The priming plate for the load is separated from the upper end of the metallic or semimetallic body of the pre-load. The priming plate is manufactured through zone melting after Czochralski method to form the metallic or semimetallic body and the priming plates with rectangular or square base form are separated. The metallic or semimetallic body is partitioned through saws along the sawing lines extending parallel to the crystal orientation into multiple monocrystalline metallic or semimetallic bodies and the priming plates are arranged on the base of the melting pots in such a manner that edges of the priming plates define the beginning of the later sawing lines. The direction of the temperature gradient is constant during the entire procedure. The temperature of the base of the melting pot is 1380[deg] C. The melting pot has a rectangular or square cross section. A heater surrounding the melting pot mechanism comprises a top heating element (6) and a mantle heater (7) surrounding the side walls of the melting pot. The amount of heat of the mantle heater decreases during solidifying from the upper end to the lower end of the melting pot in correspondence to the temperature gradient in the center of the melting pot. The mantle heater maintains uniform isotherms perpendicularly to the longitudinal direction and comprises heating elements, which have meander-shaped flows in the longitudinal direction of the melting pot or perpendicular to the melting pot. The heating elements are perpendicular to the longitudinal direction of extending bars, where the conductor cross sections of the bars increases from the upper end to the lower end in continuous or discrete steps. The bars extend in equidistant and parallel manner and are provided with a conductor cross section, which is narrowed at reversal areas of the meander-shaped flow in diagonal direction so that the conductor cross section equals the conductor cross section of an assigned bar before or after the respective reversal areas. The narrowings of the conductor cross section are formed by punchings or recesses in and/or from the bar materials, which are formed transverse to the conductor cross section in distributed manner. The bars are provided with segments, which are detachably interconnected by connecting elements or interconnected in a material fit. The thermal insulation is not intended between the side wall of the melting pot and the mantle heater. The metallic or semimetallic raw material is lumpy, granular silicon, which is melted by the top edge of the melting pot so that melted, liquid silicon flows downward through the silicon filling. For filling the pot with the raw material, average or fine silicon granulates are applied on the base covered with the priming plate. The silicon granulate is brought in a thin layer and then large silicon plates are brought in horizontal orientation. The large silicon plates are covered by further silicon granulates. The silicon filling is covered by smaller pieces of silicon. The smaller pieces of silicon are pieces of silicon, which originate from a recycling process and/or purification process of waste material, silicon fraction from pre-loads or silicon-wafer fraction. An independent claim is included for monocrystalline silicon wafer.

10. 发明专利

DE102006017621B4 未知
公开(公告)号：DE102006017621B4
公开(公告)日：2008-12-24
申请号：DE102006017621
申请日：2006-04-12
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , FINKBEINER MARKUS , SAHR UWE , SCHWIRTLICH INGO , CLAUSS MICHAEL
IPC分类号： C30B11/00 , C30B29/06
摘要： The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible. The crucible exhibits a rectangular- or square shaped cross-section. The heater comprises heating elements arranged at side surfaces of the crucible. The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible. The crucible exhibits a rectangular- or square shaped cross-section. The heater comprises heating elements arranged at side surfaces of the crucible. The jacket heater forms a heating zone, which is displayed so that a delivered heat output decreases from the upper end to the lower end, in order to maintain the temperature gradient. The heat output of the jacket heater in the longitudinal direction decreases in correspondence to the temperature gradient in the center of the crucible. The jacket heater is designed to maintain a number of even isotherms vertical to the longitudinal direction. The outer contour of the jacket heater is formed corresponding to the outer contour of the crucible, so that a distance is maintained constant between the heater and the crucible. The heating elements exhibit a meander shaped course in the longitudinal or perpendicular direction to it. The rectangular shaped bars run equidistant and parallel to each other. A conductor cross-section of the bars is constricted at the reverse regions of the meander shaped course in diagonal direction, so that the section is likely assigned to bars before or after the respective reverse regions. The constrictions of the conductor cross-section are formed at the reverse regions through a number of perforations or recesses in and/or from the bar materials that are arranged diagonally to the distributed conductor cross-section. The heating elements extending vertically to the longitudinal direction are formed as rectangular shaped bars, whose conductor cross-section increases from the upper end to the lower end in continuous or discrete steps. The conductor cross-section of the bars exhibits a number of segments, which are solvable connected together by connecting element in material fit. Non-thermal insulation is provided between the crucible wall and the jacket heater. An independent claim is included for a method for the production of single- or multi crystalline silicon based on vertical-gradient-freeze-method.

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