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1. 发明专利

JP2005255516A METHOD FOR MANUFACTURING LARGE-VOLUME CaF2 SINGLE CRYSTAL HAVING LOW SCATTERING PROPERTY AND HIGH LASER STABILITY, CRYSTAL MANUFACTURED BY THE METHOD, AND USE OF THE CRYSTAL 审中-公开
标题翻译：制造大容量CaF2单晶的方法，具有低散射性和高激光稳定性，通过该方法制造的晶体和晶体的使用
公开(公告)号：JP2005255516A
公开(公告)日：2005-09-22
申请号：JP2005043460
申请日：2005-02-21
申请人： Schott Ag , ショットアーゲーSchott AG
发明人： ORTMANN LARS , KANDLER JOERG , MENZEL ANDREAS , MUELLER MATTHIAS , PARTHIER LUTZ , VON DER GOENNA GORDON
IPC分类号： G03F1/14 , C01B9/08 , C01F11/22 , C30B11/00 , C30B29/12 , G02B1/02 , G02B5/30 , G03F7/20 , H01L21/027
CPC分类号： C01F11/22 , C01B9/08 , C01P2006/80 , C30B11/00 , C30B29/12
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a large-volume CaF 2 single crystal having high laser stability, low scattering property, high uniformity and improved birefringence. SOLUTION: A CaF 2 single crystal which can be tempered at elevated temperatures and has low scattering property, small refractive index difference and small angle grain boundaries is manufactured by steps of: (a) heat-treating a CaF 2 material at 1,000-1,250°C for at least 5 hours; (b) vaporizing the CaF 2 material at ≥1,100°C in vacuum of at most 5×10 -4 mbar to produce vapor after the heat treatment in the step (a); (c) condensing the vapor at 500-1,280°C to produce a condensate; (d) producing a CaF 2 melt from the condensate; (e) cooling the CaF 2 melt to grow a CaF 2 single crystal; and (f) then tempering the CaF 2 single crystal. As the start material of CaF 2 in this method, waste crystals and cuttings from a used melt can be used. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高激光稳定性，低散射性，高均匀性和改善的双折射的大容量CaF 2 SBS 2 单晶的制造方法。解决方案：可以在升高的温度下回火并具有低散射性，小的折射率差和小的晶粒边界的CaF 2 SBB单晶通过以下步骤制造：（a）在1000-1,250℃下处理CaF 2 SBB材料至少5小时; （b）在≥1,100℃下在至多5×10 -6 SPORM巴的真空中汽化CaF 2 SBB 2材料，以在步骤（a）中进行热处理后产生蒸汽）; （c）在500-1,280℃冷凝蒸气以产生冷凝物; （d）从所述冷凝物中产生CaF 2 SB 2熔体; （e）冷却CaF 2 SBS熔体以生长CaF 2 SBB单晶; 和（f）然后回火CaF 2 单晶。在该方法中作为CaF 2 的起始材料，可以使用来自所用熔体的废晶体和切屑。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2007284343A Device and method for production of single crystal or polycrystalline material, in particular polycrystalline silicon 有权
标题翻译：用于生产单晶或多晶材料，特别是多晶硅的装置和方法
公开(公告)号：JP2007284343A
公开(公告)日：2007-11-01
申请号：JP2007099038
申请日：2007-04-05
申请人： Schott Ag , ショットアクチエンゲゼルシャフトSchott AG
发明人： MUELLER MATTHIAS , FINKBEINER MARKUS , SAHR UWE , SCHWIRTLICH INGO , CLAUSS MICHAEL
IPC分类号： C01B33/021 , C30B11/00 , C30B29/06 , H01L31/04
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for production of single crystals or polycrystalline materials using a vertical-gradient-freeze method, in particular silicon for applications in photovoltaics; and to decrease the amount of wastage by constituting a crucible cross section in polygonal, particularly in rectangular or square-shape. SOLUTION: Around the circumference of the crucible, a flat or planar heating element in particular jacket heater, which generates an inhomogeneous temperature profile is installed. This temperature profile is made to correspond to the temperature gradient formed in the center of the crucible. The heat output of the flat heating element decreases as going from the top end to the bottom end of the crucible. The flat heating element comprises a plurality of parallel heating webs, extending in a vertical or horizontal meandering course. The heat output from the webs is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering course of the webs. The flat heating element can be formed from a plurality of interconnected individual segments. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供使用垂直梯度冷冻法，特别是用于光伏电池的硅的单晶或多晶材料的制造方法和装置; 并且通过构成多边形，特别是矩形或正方形的坩埚横截面来减少浪费量。解决方案：围绕坩埚的圆周，安装平坦或平面加热元件，特别是夹套加热器，其产生不均匀的温度分布。使该温度分布对应于在坩埚中心形成的温度梯度。扁平加热元件的热量输出随坩埚的顶端到底端而降低。扁平加热元件包括多个平行的加热幅材，其在垂直或水平的曲折过程中延伸。通过改变导体横截面来设定来自腹板的热量输出。为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域处提供横截面的收缩。扁平加热元件可以由多个相互连接的各个部分形成。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007204358A Production of high-purity, large-volume monocrystals with special radiation-resistant from crystal shards 审中-公开
标题翻译：生产具有特殊耐辐射性的高纯度，大容量单晶的晶体
公开(公告)号：JP2007204358A
公开(公告)日：2007-08-16
申请号：JP2006335294
申请日：2006-12-13
申请人： Schott Ag , ショットアクチエンゲゼルシャフトSchott AG
发明人： WEISLEDER ANDREAS , MUELLER MATTHIAS , KANDLER JOERG , MENZEL ANDREAS , GUETT RAINER
IPC分类号： C30B29/12 , G02B1/02 , H01L21/027
CPC分类号： C30B11/00 , C30B29/12
摘要： PROBLEM TO BE SOLVED: To provide crystals that have particularly novariation in refractive indexes and high homogeneity of their refractive index and low birefringence, having low strain double refraction; and to provide a method of re-using and recycling already used raw material, waste and trimmings from earlier crystal growths.
SOLUTION: A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence by generating a melt of crystalline raw material and controlled cooling and solidification to a crystal, characterized in that as the crystalline raw material, shards and/or waste of already-grown crystals are used, which (1) upon visual observation in daylight has no color, and (2) upon illumination with a white-light lamp in a darkroom (a) has no or at maximum a just barely perceivable reddish and/or bluish fluorescence, and (b) has no or at maximum a just barely perceivable diffuse scattering, and (c) has no or only slight discrete scattering of at maximum two visually perceivable scattering centers per dm
3 .
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有低应变双折射的折射率和折射率均匀性高，双折射低的晶体，并提供一种从早期晶体生长中重新利用和回收已经使用的原材料，废物和装饰物的方法。解决方案：一种生产高纯度，大容量单晶的方法，其特别是耐辐射性，并且通过产生晶体原料熔体和对晶体进行控制冷却和固化而具有低固有双折射，其特征在于，作为使用已经生长的晶体的结晶原料，碎片和/或废弃物，其中（1）在日光下目视观察时没有颜色，以及（2）在暗室（a）中用白光灯照明时或最多只有几乎不可察觉的淡红色和/或蓝色荧光，和（b）没有或最多只有几乎不可察觉的漫射散射，（c）每个最大两个视觉上可感知的散射中心没有或只有轻微的离散散射 DM 3 。版权所有（C）2007，JPO＆INPIT

4. 发明专利

DE502007006490D1 Vorrichtung und Verfahren zur Herstellung von kristallinen Materialien 未知
公开(公告)号：DE502007006490D1
公开(公告)日：2011-03-31
申请号：DE502007006490
申请日：2007-03-26
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , FINKBEINER MARKUS , SAHR UWE , SCHWIRTLICH INGO , CLAUSS MICHAEL
IPC分类号： C30B11/00

5. 发明专利

DE102007061704A1 未知
公开(公告)号：DE102007061704A1
公开(公告)日：2009-09-10
申请号：DE102007061704
申请日：2007-12-19
申请人： SCHOTT AG
发明人： SAHR UWE , MUELLER MATTHIAS , SCHWIRTLICH INGO
IPC分类号： C30B11/04 , C30B11/00

6. 发明专利

DE102007038851A1 未知
公开(公告)号：DE102007038851A1
公开(公告)日：2009-02-19
申请号：DE102007038851
申请日：2007-08-16
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , SAHR UWE
IPC分类号： B22D27/04 , C30B11/02
摘要： The method for producing monocrystalline silicon bodies e.g. silicon ingots in the vertical gradient freeze (VGF) procedure, comprises melting a semimetallic or metallic raw material in a melting pot (2, 4) to form a melt (3) and solidifying the melt under effect of a temperature gradient in a vertical direction and from lower end of the melting pot to its upper end to form monocrystalline metallic or semimetallic body. Before introducing the semimetallic or metallic raw material into the pot, the base of the melting pot is covered with a thin monocrystalline priming plate. The method for producing monocrystalline silicon bodies e.g. silicon ingots in the vertical gradient freeze (VGF) procedure, comprises melting a semimetallic or metallic raw material in a melting pot (2, 4) to form a melt (3) and solidifying the melt under effect of a temperature gradient in a vertical direction and from lower end of the melting pot to its upper end to form monocrystalline metallic or semimetallic body. Before introducing the semimetallic or metallic raw material into the pot, the base of the melting pot is covered with a thin monocrystalline priming plate having a crystal orientation parallel to the vertical direction of the melting pot. The temperature of the base of the melting pot is held at a temperature below the melting temperature of the raw material to prevent melting of the priming plate. The priming plate completely covers the base of the pot. The priming plate comprises inner monocrystalline priming plates, which are directly arranged together to completely cover the base of the melting pot. The priming plates have a constant thickness or different thicknesses. The priming plate is separated from the metallic or semimetallic body of a pre-load. The temperature gradient maintains an even, horizontal phase boundary between liquid and solid aggregate condition of the semimetal or metal. A small average section of the base of the melting pot is covered with the priming plate to begin the production of the pre-load. The priming plate for the load is separated from the upper end of the metallic or semimetallic body of the pre-load. The priming plate is manufactured through zone melting after Czochralski method to form the metallic or semimetallic body and the priming plates with rectangular or square base form are separated. The metallic or semimetallic body is partitioned through saws along the sawing lines extending parallel to the crystal orientation into multiple monocrystalline metallic or semimetallic bodies and the priming plates are arranged on the base of the melting pots in such a manner that edges of the priming plates define the beginning of the later sawing lines. The direction of the temperature gradient is constant during the entire procedure. The temperature of the base of the melting pot is 1380[deg] C. The melting pot has a rectangular or square cross section. A heater surrounding the melting pot mechanism comprises a top heating element (6) and a mantle heater (7) surrounding the side walls of the melting pot. The amount of heat of the mantle heater decreases during solidifying from the upper end to the lower end of the melting pot in correspondence to the temperature gradient in the center of the melting pot. The mantle heater maintains uniform isotherms perpendicularly to the longitudinal direction and comprises heating elements, which have meander-shaped flows in the longitudinal direction of the melting pot or perpendicular to the melting pot. The heating elements are perpendicular to the longitudinal direction of extending bars, where the conductor cross sections of the bars increases from the upper end to the lower end in continuous or discrete steps. The bars extend in equidistant and parallel manner and are provided with a conductor cross section, which is narrowed at reversal areas of the meander-shaped flow in diagonal direction so that the conductor cross section equals the conductor cross section of an assigned bar before or after the respective reversal areas. The narrowings of the conductor cross section are formed by punchings or recesses in and/or from the bar materials, which are formed transverse to the conductor cross section in distributed manner. The bars are provided with segments, which are detachably interconnected by connecting elements or interconnected in a material fit. The thermal insulation is not intended between the side wall of the melting pot and the mantle heater. The metallic or semimetallic raw material is lumpy, granular silicon, which is melted by the top edge of the melting pot so that melted, liquid silicon flows downward through the silicon filling. For filling the pot with the raw material, average or fine silicon granulates are applied on the base covered with the priming plate. The silicon granulate is brought in a thin layer and then large silicon plates are brought in horizontal orientation. The large silicon plates are covered by further silicon granulates. The silicon filling is covered by smaller pieces of silicon. The smaller pieces of silicon are pieces of silicon, which originate from a recycling process and/or purification process of waste material, silicon fraction from pre-loads or silicon-wafer fraction. An independent claim is included for monocrystalline silicon wafer.

7. 发明专利

DE102006017621B4 未知
公开(公告)号：DE102006017621B4
公开(公告)日：2008-12-24
申请号：DE102006017621
申请日：2006-04-12
申请人： SCHOTT AG
发明人： MUELLER MATTHIAS , FINKBEINER MARKUS , SAHR UWE , SCHWIRTLICH INGO , CLAUSS MICHAEL
IPC分类号： C30B11/00 , C30B29/06
摘要： The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible. The crucible exhibits a rectangular- or square shaped cross-section. The heater comprises heating elements arranged at side surfaces of the crucible. The crystallization device for production of single- or multi crystalline silicon by vertical-gradient-freeze-method, comprises a stable crucible (2) with upper- and lower end, and a heating device for melting the silicon and exhibiting a jacket heater (7) for rejection of heat flow perpendicular to longitudinal direction. The device is designed to form a temperature gradient in the longitudinal direction in the crucible. The crucible exhibits a rectangular- or square shaped cross-section. The heater comprises heating elements arranged at side surfaces of the crucible. The jacket heater forms a heating zone, which is displayed so that a delivered heat output decreases from the upper end to the lower end, in order to maintain the temperature gradient. The heat output of the jacket heater in the longitudinal direction decreases in correspondence to the temperature gradient in the center of the crucible. The jacket heater is designed to maintain a number of even isotherms vertical to the longitudinal direction. The outer contour of the jacket heater is formed corresponding to the outer contour of the crucible, so that a distance is maintained constant between the heater and the crucible. The heating elements exhibit a meander shaped course in the longitudinal or perpendicular direction to it. The rectangular shaped bars run equidistant and parallel to each other. A conductor cross-section of the bars is constricted at the reverse regions of the meander shaped course in diagonal direction, so that the section is likely assigned to bars before or after the respective reverse regions. The constrictions of the conductor cross-section are formed at the reverse regions through a number of perforations or recesses in and/or from the bar materials that are arranged diagonally to the distributed conductor cross-section. The heating elements extending vertically to the longitudinal direction are formed as rectangular shaped bars, whose conductor cross-section increases from the upper end to the lower end in continuous or discrete steps. The conductor cross-section of the bars exhibits a number of segments, which are solvable connected together by connecting element in material fit. Non-thermal insulation is provided between the crucible wall and the jacket heater. An independent claim is included for a method for the production of single- or multi crystalline silicon based on vertical-gradient-freeze-method.

8. 发明专利

DE102005059531A1 Preparation of highly pure, preferably radiation-stable large volume single crystals, useful in e.g. lenses, comprises producing a melt obtained from crystal raw material and controlled cooling under solidification 未知
公开(公告)号：DE102005059531A1
公开(公告)日：2007-06-14
申请号：DE102005059531
申请日：2005-12-13
申请人： SCHOTT AG
发明人： WEISLEDER ANDREAS , MUELLER MATTHIAS , KANDLER JOERG , MENZEL ANDREAS , GUETT RAINER
IPC分类号： C30B11/00 , C30B29/12 , C30B33/02 , G02B1/02
摘要： Preparation of highly pure, preferably radiation-stable large volume single crystals with small intrinsic birefringence comprises producing a melt obtained from crystal raw material and controlled cooling under solidification, where: fragments and/or blends of the obtained crystals is useful as crystal raw material; the crystal exhibits no color under visual observation, and on irradiating in dark room with a white light lamp exhibits e.g. (a) minimum or maximum of perceptible reddish and/or bluish fluorescence. Preparation of highly pure, preferably radiation-stable large volume single crystals with small intrinsic birefringence comprises producing a melt obtained from crystal raw material and controlled cooling under solidification, where: fragments and/or blends of the obtained crystals are useful as crystal raw material; the crystal exhibits no color under visual observation, and on irradiating in dark room with a white light lamp exhibits (a) minimum or maximum of perceptible reddish and/or bluish fluorescence, (b) minimum or maximum of perceptible diffuse dispersion, and minimum or weak discrete dispersion of maximum two visually perceptible dispersions per dm 3>. An independent claim is included for a crystal for optical applications comprising a BSDF value of less than 7x10 -7>, RMS homogenizes after removing of 36 Zernike-coefficients of less than 15x10 -8>and a SDB RMS value in 111 direction of less than 0.2 nm/cm.

9. 发明专利

AT544884T 未知
公开(公告)号：AT544884T
公开(公告)日：2012-02-15
申请号：AT08171560
申请日：2008-12-12
申请人： SCHOTT AG
发明人： SAHR UWE DR , MUELLER MATTHIAS , SCHWIRTLICH INGO DR , LENTES FRANK-THOMAS DR , BUELLESFELD FRANK DR , JOCKEL DIETMAR
IPC分类号： C30B11/00 , C30B11/04 , C30B29/06
摘要： The invention relates to a method for producing a monocrystalline or polycrystalline semiconductor material by way of directional solidification, wherein lumpy semiconductor raw material is introduced into a melting crucible and melted therein and directionally solidified, in particular using the vertical gradient freeze method. In order to prevent contamination and damage, the semiconductor raw material is melted from the upper end of the melting crucible. The molten material trickles downward, so that semiconductor raw material which has not yet melted gradually slumps in the melting crucible. In this case, the additional semiconductor raw material is replenished to the melting crucible from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted, in order at least partly to compensate for a volumetric shrinkage of the semiconductor raw material and to increase the filling level of the crucible. In order to reduce the melting-on time and to influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated by the purposeful introduction of heat to a temperature below the melting temperature of the semiconductor raw material and introduced into the container in the heated state.

10. 发明专利

DE10154402B4 未知
公开(公告)号：DE10154402B4
公开(公告)日：2008-08-07
申请号：DE10154402
申请日：2001-10-10
申请人： SCHOTT AG
发明人： TRATZKY STEPHAN , DOTZLER HEINZ , MUELLER MATTHIAS , PFEIFER JOACHIM , SILLER MICHAEL , SCHULZ LEONID , HAAS GOTTFRIED
IPC分类号： C03C17/10 , C03C17/00 , F24J2/04 , F24S10/40 , F24S23/70 , F24S23/74

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