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1. 发明授权

US07821069B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821069B2
公开(公告)日：2010-10-26
申请号：US12010111
申请日：2008-01-22
申请人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
发明人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
IPC分类号： H01L23/62
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.
摘要翻译：半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。每个电阻元件包括设置在两侧的电阻垫。每个电容元件包括设置在两侧的电容焊盘。除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

2. 发明授权

US08102047B2 Load driving device 有权
标题翻译：负载驱动装置
公开(公告)号：US08102047B2
公开(公告)日：2012-01-24
申请号：US12801187
申请日：2010-05-27
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H01L23/34 , H01L23/10
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.
摘要翻译：负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。输出功率器件和驱动IC安装在第一电极基板上。在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

3. 发明授权

US07755187B2 Load driving device 有权
公开(公告)号：US07755187B2
公开(公告)日：2010-07-13
申请号：US11806467
申请日：2007-05-31
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H01L23/34 , H01L23/495
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.

4. 发明申请

US20080007920A1 Loading driving device 有权
标题翻译：装载驱动装置
公开(公告)号：US20080007920A1
公开(公告)日：2008-01-10
申请号：US11806467
申请日：2007-05-31
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H02M7/537 , H05K7/20
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.
摘要翻译：负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。输出功率器件和驱动IC安装在第一电极基板上。在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

5. 发明申请

US20100238632A1 Load driving device 有权
标题翻译：负载驱动装置
公开(公告)号：US20100238632A1
公开(公告)日：2010-09-23
申请号：US12801187
申请日：2010-05-27
申请人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
发明人： Satoshi Shiraki , Akira Yamada , Hiroyuki Ban
IPC分类号： H05K7/20
CPC分类号： H05K7/1432 , H01L24/73 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/01046 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A load driving device includes: an output power device for driving a load; a driving IC for controlling the output power device, wherein the driving IC is electrically coupled with the output power device through a wire or a connection member; and a first electrode substrate. The output power device and the driving IC are mounted on the first electrode substrate. In this case, the output power device is controlled with high speed, and a mounting area of the output power device and the driving IC is reduced.
摘要翻译：负载驱动装置包括：用于驱动负载的输出功率装置; 用于控制输出功率器件的驱动IC，其中驱动IC通过导线或连接构件与输出功率器件电耦合; 和第一电极基板。输出功率器件和驱动IC安装在第一电极基板上。在这种情况下，输出功率器件被高速控制，并且输出功率器件和驱动IC的安装面积减小。

6. 发明申请

US20090127605A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090127605A1
公开(公告)日：2009-05-21
申请号：US12010111
申请日：2008-01-22
申请人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
发明人： Satoshi Shiraki , Hiroyuki Ban , Akira Yamada
IPC分类号： H01L29/66 , H01L21/66
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: n transistor elements; n resistive elements; and n capacitive elements, each kind of elements coupled in series between the first and second terminals. The gate of each transistor element has a gate pad, and each transistor element includes transistor pads disposed on both sides. Each resistive element includes resistive pads disposed on both sides. Each capacitive element includes capacitive pads disposed on both sides. The gate pad other than the first stage transistor element, a corresponding resistive pad, and a corresponding capacitive pad are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the first stage are electrically coupled. One transistor pad, one resistive pad, and one capacitive pad in the n-th stage are electrically coupled.
摘要翻译：半导体器件包括：n个晶体管元件; n电阻元件; 和n个电容元件，每种元件串联在第一和第二端子之间。每个晶体管元件的栅极具有栅极焊盘，并且每个晶体管元件包括设置在两侧的晶体管焊盘。每个电阻元件包括设置在两侧的电阻垫。每个电容元件包括设置在两侧的电容焊盘。除了第一级晶体管元件之外的栅极焊盘，对应的电阻焊盘和对应的电容焊盘是电耦合的。第一级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。第n级中的一个晶体管焊盘，一个电阻焊盘和一个电容焊盘电耦合。

7. 发明授权

US09240445B2 Lateral semiconductor device 有权
标题翻译：侧面半导体器件
公开(公告)号：US09240445B2
公开(公告)日：2016-01-19
申请号：US14113419
申请日：2012-05-10
申请人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
发明人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
IPC分类号： H01L23/62 , H01L29/06 , H01L29/40 , H01L29/861
CPC分类号： H01L29/063 , H01L29/0692 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/861
摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.
摘要翻译：横向半导体器件包括半导体层，绝缘层和电阻场板。半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。电阻场板形成在绝缘层的表面上。在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

8. 发明申请

US20090152668A1 Semiconductor apparatus 有权
标题翻译：半导体装置
公开(公告)号：US20090152668A1
公开(公告)日：2009-06-18
申请号：US12314518
申请日：2008-12-11
申请人： Hiroki Sone , Akira Yamada , Satoshi Shiraki , Nozomu Akagi
发明人： Hiroki Sone , Akira Yamada , Satoshi Shiraki , Nozomu Akagi
IPC分类号： H01L25/16 , H01L23/495
CPC分类号： H01L27/1203 , H01L23/49589 , H01L23/585 , H01L24/48 , H01L27/092 , H01L2224/48095 , H01L2224/48247 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor apparatus is disclosed. The semiconductor apparatus includes an SOI substrate including an active layer, a buried insulation film and a support substrate; a low potential reference circuit part located in the active layer and operable at a first reference potential; a high potential reference circuit part located in the active layer and operable at a second reference potential; a level-shifting element forming part located in the active layer and for providing a level-shift between the first and second reference potentials; and an insulation member insulating first and second portions of the support substrate from each other, wherein locations of the first and second portions respectively correspond to the low and high potential reference circuit parts.
摘要翻译：公开了一种半导体装置。半导体装置包括：SOI基板，包括有源层，掩埋绝缘膜和支撑基板; 位于所述有源层中并且可在第一参考电位下操作的低电位参考电路部分; 位于所述有源层中并且可在第二参考电位下操作的高电位参考电路部分; 位于有源层中的电平移动元件形成部分，用于在第一和第二参考电位之间提供电平移位; 以及绝缘构件，其将所述支撑基板的第一和第二部分彼此绝缘，其中所述第一和第二部分的位置分别对应于所述低电位和高电位参考电路部分。

9. 发明授权

US08854033B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
标题翻译：电流传感器，逆变器电路和具有相同功能的半导体器件
公开(公告)号：US08854033B2
公开(公告)日：2014-10-07
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

10. 发明申请

US20140048911A1 LATERAL SEMICONDUCTOR DEVICE 有权
标题翻译：横向半导体器件
公开(公告)号：US20140048911A1
公开(公告)日：2014-02-20
申请号：US14113419
申请日：2012-05-10
申请人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
发明人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
IPC分类号： H01L29/06
CPC分类号： H01L29/063 , H01L29/0692 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/861
摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.
摘要翻译：横向半导体器件包括半导体层，绝缘层和电阻场板。半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。电阻场板形成在绝缘层的表面上。在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

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