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1. 发明申请

US20130032201A1 PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：光电转换元件，光电转换元件及制造光电转换元件的方法
公开(公告)号：US20130032201A1
公开(公告)日：2013-02-07
申请号：US13642043
申请日：2011-04-27
申请人： Satoshi Oomae , Shinichi Abe , Masato Fukudome , Takeshi Ookuma , Katsuhiko Shirasawa , Takehiro Nishimura , Daisuke Toyota , Hirotaka Sano , Keita Kurosu
发明人： Satoshi Oomae , Shinichi Abe , Masato Fukudome , Takeshi Ookuma , Katsuhiko Shirasawa , Takehiro Nishimura , Daisuke Toyota , Hirotaka Sano , Keita Kurosu
IPC分类号： H01L31/0336 , H01L31/18
CPC分类号： H01L31/072 , H01L31/0322 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： [Problem] In the case of further stacking a window layer or the like on a buffer layer, the buffer layer and the light absorption layer are likely to be damaged during the formation of the window layer due to inferior moisture resistance and plasma resistance, and photoelectric conversion elements sometimes fail to achieve any satisfactory conversion efficiency in terms of reliability.[Solving Means] Provided is a photoelectric conversion element including: a light absorption layer containing a I-B group element, a III-B group element, and a VI-B group element, which is provided on a lower electrode layer; a first semiconductor layer containing a III-B group element and a VI-B group element, which is provided on the light absorption layer; and a second semiconductor layer containing an oxide of a II-B group element, which is provided on the first semiconductor layer, wherein the light absorption layer comprises a doped layer region containing the II-B group element, on the first semiconductor layer side.
摘要翻译： [问题]在缓冲层上进一步堆叠窗口层等的情况下，由于防潮性和等离子体电阻差，在形成窗口层期间缓冲层和光吸收层容易受损，光电转换元件在可靠性方面有时不能达到令人满意的转换效率。 [解决方案]提供一种光电转换元件，其包括：设置在下电极层上的含有I-B族元素，III-B族元素和VI-B族元素的光吸收层; 设置在光吸收层上的含有III-B族元素和VI-B族元素的第一半导体层; 以及第一半导体层，其包含设置在所述第一半导体层上的II-B族元素的氧化物的第二半导体层，其中所述光吸收层包含在所述第一半导体层侧上含有所述II-B族元素的掺杂层区域。

2. 发明申请

US20070095387A1 Solar cell module 审中-公开
标题翻译：太阳能电池组件
公开(公告)号：US20070095387A1
公开(公告)日：2007-05-03
申请号：US10580982
申请日：2004-11-26
申请人： Shuichi Fujii , Toshihiko Kaneko , Takashi Tsuge , Katsuhiko Shirasawa
发明人： Shuichi Fujii , Toshihiko Kaneko , Takashi Tsuge , Katsuhiko Shirasawa
IPC分类号： H02N6/00
CPC分类号： H01L31/0512 , H01L31/0508 , Y02E10/50
摘要： The largest stress is created in the vicinity of the boundary between an edge of a bus bar electrode in a solar cell and a surface of a semiconductor substrate, and stress are easily concentrated. Accordingly, defects such as micro cracks occur in the semiconductor substrate, which develop into a large craze with the defects as its starting point. In connecting bus bar electrodes 4a and 5a in the solar cell by an inner lead 8, therefore, a solder 6 is not brought into contact with edges along the longitudinal direction if the bus bar electrodes 4a and 5a and portions F from the edges to a predetermined distance a inward therefrom, and is brought into direct contact with a filler 10.
摘要翻译：在太阳能电池中的母线电极的边缘与半导体衬底的表面之间的边界附近产生最大的应力，并且应力容易集中。因此，在以缺陷为起点的半导体衬底中出现诸如微裂纹的缺陷，发生大的热潮。因此，通过内部引线8在太阳能电池中连接母线电极4a和5a时，如果汇流条电极4a和5a以及部分F从将边缘向内一定距离，并与填料10直接接触。

3. 发明授权

US07556740B2 Method for producing a solar cell 有权
标题翻译：太阳能电池的制造方法
公开(公告)号：US07556740B2
公开(公告)日：2009-07-07
申请号：US10648429
申请日：2003-08-26
申请人： Yosuke Inomata , Katsuhiko Shirasawa
发明人： Yosuke Inomata , Katsuhiko Shirasawa
IPC分类号： H01L21/306
CPC分类号： H01J37/32623 , H01J37/32082
摘要： A substrate processing apparatus that roughens the surface of a substrate through a dry etching method by covering the surface of the substrate to be processed with a plate provided with a number of opening portions. The plate is provided with the opening portions in such a manner that an open area ratio of the opening portions on the peripheral side is smaller than an open area ratio of the opening portions in the central portion when the plate is viewed in a plane. It is thus possible to form textures on the surface of the substrate efficiently and homogenously, which in turn makes it possible to manufacture highly efficient solar cells or the like at a low cost.
摘要翻译：一种基板处理装置，其通过用设置有多个开口部的板覆盖被处理基板的表面，通过干法蚀刻法使基板的表面粗糙化。该板以这样一种方式设置开口部分，使得当在平面中观察板时，周边侧的开口部分的开口面积比小于中心部分中的开口部分的开口面积比。因此，可以有效且均匀地在基板的表面上形成纹理，这又可以以低成本制造高效率的太阳能电池等。

4. 发明授权

US4640001A Solar cell manufacturing method 失效
标题翻译：太阳能电池制造方法
公开(公告)号：US4640001A
公开(公告)日：1987-02-03
申请号：US684271
申请日：1984-12-20
申请人： Sakae Koiwai , Keizo Asaoka , Katsuhiko Shirasawa , Hiroyuki Watanabe , Junichi Honda
发明人： Sakae Koiwai , Keizo Asaoka , Katsuhiko Shirasawa , Hiroyuki Watanabe , Junichi Honda
IPC分类号： H01L31/04 , H01L31/0216 , H01L31/068 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/068 , Y02E10/547
摘要： Solar cell manufacturing method in which a silicon wafer is coated with an antireflection coating of silicon nitride by means of plasma CVD deposition with the silicon wafer kept at a temperature between 250.degree. C. and 600.degree. C. The coating of silicon nitride at such a high temperature results in a decrease in the recombination speed of the minority carriers produced in the silicon wafer during time of light incidence. The conversion efficiency is thus increased to a value ranging from 11.04% to 12.56%.
摘要翻译：太阳能电池制造方法，其中硅晶片通过等离子体CVD沉积涂覆有氮化硅的抗反射涂层，硅晶片保持在250℃至600℃的温度。氮化硅涂层高温导致光入射时在硅晶片中产生的少数载流子的复合速度降低。因此转换效率提高到11.04％至12.56％。

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