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    • 7. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20110215427A1
    • 2011-09-08
    • US13009212
    • 2011-01-19
    • Susumu OBATATakahiro SogouYusaku AsanoTakeshi Miyagi
    • Susumu OBATATakahiro SogouYusaku AsanoTakeshi Miyagi
    • H01L29/84
    • H01L29/84H01L2224/11
    • According to one embodiment, a semiconductor device includes: a substrate; an organic insulating film provided on the substrate; an inorganic insulating film formed thinner than the organic insulating film on the organic insulating film; a hollow sealing structure that is formed on the inorganic insulating film, and seals a MEMS element in an inside while ensuring a space between the hollow sealing structure itself and the MEMS element; a through hole formed so as to penetrate the organic insulating film and the inorganic insulating film; and a conductive member that is filled into the through hole, and electrically connects the MEMS element and an electrode formed by being filled into the through hole.
    • 根据一个实施例,半导体器件包括:衬底; 设置在基板上的有机绝缘膜; 无机绝缘膜比有机绝缘膜上的有机绝缘膜薄; 形成在无机绝缘膜上的中空密封结构,并且在确保空心密封结构本身和MEMS元件之间的空间的同时将MEMS元件密封在内部; 形成为穿透有机绝缘膜和无机绝缘膜的通孔; 以及填充到通孔中的导电构件,并且将MEMS元件和由填充形成的电极电连接到通孔中。