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1. 发明申请

US20090284315A1 OPERATIONAL AMPLIFIER 有权
标题翻译：操作放大器
公开(公告)号：US20090284315A1
公开(公告)日：2009-11-19
申请号：US12296367
申请日：2007-05-21
申请人： Satoshi Kobayashi , Junji Nakatsuka
发明人： Satoshi Kobayashi , Junji Nakatsuka
IPC分类号： H03F3/45 , H03F1/34
CPC分类号： H03F1/08 , H03F1/34 , H03F3/45192 , H03F3/45475 , H03F3/45632 , H03F2203/45248 , H03F2203/45431 , H03F2203/45466 , H03F2203/45482 , H03F2203/45522 , H03F2203/45524 , H03F2203/45526 , H03F2203/45544 , H03F2203/45631 , H03F2203/45692
摘要： An operational amplifier includes, between an input and an output of an operational amplifier (an operational amplification stage) 10, a feedback capacitor 34 connected in negative feedback, a phase control circuit 100 having a resistor element (a resistor unit) 30 connected in series to the feedback capacitor 34. Load capacitors (load units) 32 are connected on the output side of the operational amplifier 10 and driven by an output signal from the operational amplifier 10. In a case that the capacitance values of the load capacitor 32 and 33 are increased and the phase margin of the operational amplifier becomes excessive in comparison with the optimum value, a resistance value RO of the resistor element 30 is increased to control the phase margin of the operational amplifier so as to fall within the optimum range, and thus accelerated settling properties are realized. This invention thus provides a phase control circuit applicable even to a single-stage operational amplifier, and by enhancing the properties of the operational amplifier itself and enabling the phase margin to be controlled, realizes accelerated settling properties even in a case that a transient response is deteriorated.
摘要翻译：运算放大器包括在运算放大器（运算放大级）10的输入和输出端之间，负反馈端连接的反馈电容器34，具有串联连接的电阻元件（电阻单元）30的相位控制电路100 负载电容器（负载单元）32连接在运算放大器10的输出侧并由运算放大器10的输出信号驱动。在负载电容器32和33的电容值的情况下并且运算放大器的相位裕度与最佳值相比变得过大，电阻元件30的电阻值RO增加，以控制运算放大器的相位裕度落在最佳范围内，因此实现了加速沉降特性。因此，本发明提供了一种甚至可应用于单级运算放大器的相位控制电路，并且通过增强运算放大器本身的性质并使得能够控制相位裕度，即使在瞬态响应为恶化

2. 发明授权

US07852158B2 Operational amplifier 有权
标题翻译：运算放大器
公开(公告)号：US07852158B2
公开(公告)日：2010-12-14
申请号：US12296367
申请日：2007-05-21
申请人： Satoshi Kobayashi , Junji Nakatsuka
发明人： Satoshi Kobayashi , Junji Nakatsuka
IPC分类号： H03F3/45
CPC分类号： H03F1/08 , H03F1/34 , H03F3/45192 , H03F3/45475 , H03F3/45632 , H03F2203/45248 , H03F2203/45431 , H03F2203/45466 , H03F2203/45482 , H03F2203/45522 , H03F2203/45524 , H03F2203/45526 , H03F2203/45544 , H03F2203/45631 , H03F2203/45692
摘要： An operational amplifier includes, between an input and an output of an operational amplifier (an operational amplification stage) 10, a feedback capacitor 34 connected in negative feedback, a phase control circuit 100 having a resistor element (a resistor unit) 30 connected in series to the feedback capacitor 34. Load capacitors (load units) 32 are connected on the output side of the operational amplifier 10 and driven by an output signal from the operational amplifier 10. In a case that the capacitance values of the load capacitor 32 and 33 are increased and the phase margin of the operational amplifier becomes excessive in comparison with the optimum value, a resistance value RO of the resistor element 30 is increased to control the phase margin of the operational amplifier so as to fall within the optimum range, and thus accelerated settling properties are realized. This invention thus provides a phase control circuit applicable even to a single-stage operational amplifier, and by enhancing the properties of the operational amplifier itself and enabling the phase margin to be controlled, realizes accelerated settling properties even in a case that a transient response is deteriorated.
摘要翻译：运算放大器包括在运算放大器（运算放大级）10的输入和输出端之间，负反馈端连接的反馈电容器34，具有串联连接的电阻元件（电阻单元）30的相位控制电路100 负载电容器（负载单元）32连接在运算放大器10的输出侧并由运算放大器10的输出信号驱动。在负载电容器32和33的电容值的情况下并且运算放大器的相位裕度与最佳值相比变得过大，电阻元件30的电阻值RO增加，以控制运算放大器的相位裕度落在最佳范围内，因此实现了加速沉降特性。因此，本发明提供了一种甚至可应用于单级运算放大器的相位控制电路，并且通过增强运算放大器本身的性质并使得能够控制相位裕度，即使在瞬态响应为恶化

3. 发明授权

US09469001B2 Machine tool 有权
标题翻译：机床
公开(公告)号：US09469001B2
公开(公告)日：2016-10-18
申请号：US14409776
申请日：2012-06-25
申请人： Shinji Koike , Kazuya Mayumi , Satoshi Kobayashi
发明人： Shinji Koike , Kazuya Mayumi , Satoshi Kobayashi
IPC分类号： B23Q1/01 , B23C1/027 , B23Q1/70 , B23Q11/00
CPC分类号： B23Q1/015 , B23C1/027 , B23C2230/00 , B23Q1/017 , B23Q1/70 , B23Q11/0042 , B23Q11/0053 , B23Q11/0067 , Y02P70/171 , Y10T409/30392 , Y10T409/304088
摘要： A machine tool includes: a bed, the upper surface of which has the table provided thereon; a cut debris duct which is provided so as to extend rearward from a cut debris discharge opening open at the center, in the left-right direction, of the rear face of the bed, and which discharges cut debris from within the bed to outside of the machine tool; a bifurcated vertically movable body which vertically moves along a pair of vertical guides, and which straddles the cut debris duct, the pair of vertical guides vertically extending on the rear face of the bed at positions on both the left and right sides of the cut debris duct; and a pair of left and right feed screws which extend parallel to the vertical guides, and which move the vertically movable body along the vertical guides.
摘要翻译：一种机床包括：床，其上表面设置有桌子; 切割的碎屑管被设置成从床的后表面的中心的左右方向上的切割碎屑排出口向后延伸，并且将切碎的碎屑从床内排出到机床; 一个分叉的可垂直移动的主体，其沿着一对垂直引导件垂直移动，并且跨越切割的碎屑管道，一对垂直引导件在切割碎片的左侧和右侧的位置处垂直延伸在床的后表面上管; 以及一对平行于垂直导向件延伸的左右进给螺钉，并使垂直移动体沿垂直导向件移动。

4. 发明授权

US08846779B2 Energy ray-curable ink composition 有权
标题翻译：能量射线固化型油墨组合物
公开(公告)号：US08846779B2
公开(公告)日：2014-09-30
申请号：US12921957
申请日：2009-05-15
申请人： Katsuyuki Kito , Masayuki Oya , Satoshi Kobayashi
发明人： Katsuyuki Kito , Masayuki Oya , Satoshi Kobayashi
IPC分类号： C08F2/50 , C09D11/00 , C08J3/28 , C09D11/101 , C09D11/38
CPC分类号： C09D11/101 , C09D11/38 , Y10S522/909
摘要： The present invention provides an energy ray-curable ink composition excellent in the continuous discharge property, and excellent in curability and adherability. The present invention relates to an energy ray-curable ink composition which contains a coloring agent, contains only a monofunctional monomer having an acrylic equivalent of 300 or less, and having one ethylenic double bond in one molecule, and a polyfunctional monomer having an acrylic equivalent of 150 or less, and having two or more ethylenic double bonds in one molecule as a polymerizable compound, contains an α-aminoalkylphenone compound and a thioxanthone compound as a photopolymerization initiator, and contains a silicone compound having a polydimethylsiloxane structure as a surface conditioner.
摘要翻译：本发明提供了连续放电性优异，固化性和粘接性优异的能量射线固化性油墨组合物。本发明涉及一种含有着色剂的能量射线固化性油墨组合物，其仅含有丙烯酸当量为300以下，单分子中具有1个烯属双键的单官能单体和具有丙烯酸当量的多官能单体 150以下，在1分子中具有2个以上的烯属双键作为聚合性化合物，含有α-氨基烷基苯酮化合物和噻吨酮化合物作为光聚合引发剂，并含有作为表面调节剂的聚二甲基硅氧烷结构的硅氧烷化合物。

5. 发明授权

US08633485B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08633485B2
公开(公告)日：2014-01-21
申请号：US13075436
申请日：2011-03-30
申请人： Satoshi Kobayashi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Daisuke Kawae
发明人： Satoshi Kobayashi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Daisuke Kawae
IPC分类号： H01L31/00 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L21/02
CPC分类号： H01L29/41733 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： To provide a display device having a thin film transistor with high electric characteristics and excellent reliability and a manufacturing method thereof. A gate electrode, a gate insulating film provided over the gate electrode, a first semiconductor layer provided over the gate insulating film and having a microcrystalline semiconductor, a second semiconductor layer provided over the first semiconductor layer and having an amorphous semiconductor, and a source region and a drain region provided over the second semiconductor layer are provided. The first semiconductor layer has high crystallinity than the second semiconductor layer. The second semiconductor layer includes an impurity region having a conductivity type different from a conductivity type of the source region and the drain region between the source region and the drain region.
摘要翻译：提供具有高电特性和优异可靠性的薄膜晶体管的显示装置及其制造方法。栅电极，设置在栅电极上的栅极绝缘膜，设置在栅绝缘膜上并具有微晶半导体的第一半导体层，设置在第一半导体层上并具有非晶半导体的第二半导体层，以及源极区并且设置在第二半导体层上的漏极区。第一半导体层具有比第二半导体层高的结晶度。第二半导体层包括具有不同于源极区域的导电类型和源极区域与漏极区域之间的漏极区域的导电类型的杂质区域。

6. 发明授权

US08378340B2 Aromatic compound 有权
标题翻译：芳香族化合物
公开(公告)号：US08378340B2
公开(公告)日：2013-02-19
申请号：US13487405
申请日：2012-06-04
申请人： Satoshi Kobayashi , Satoshi Mikami
发明人： Satoshi Kobayashi , Satoshi Mikami
IPC分类号： H01L35/24 , C07D333/76
CPC分类号： C07D307/91
摘要： An aromatic compound of the following formula (1), (2), (5) or (6), wherein, Ar1 and Ar3 represent a tetra-valent aromatic hydrocarbon group or a tetra-valent heterocyclic group, and Ar2, Ar4, Ar5, Ar6 and Ar7 represent a tri-valent aromatic hydrocarbon group or a tri-valent heterocyclic group, A1 represents —Z1—, —Z2—Z3— or —Z4═Z5—, wherein Z1, Z2 and Z3 represent O, S or the like and Z4 and Z5 represent N, B, P or the like, X1, X2, X3, X4, X9, X10, X11, and X12 represent a halogen atom or the like.
摘要翻译：下式（1），（2），（5）或（6）的芳族化合物，其中Ar1和Ar3表示四元芳香族烃基或四价杂环基，Ar2，Ar4，Ar5 中，Ar 6和Ar 7表示3价芳香族烃基或3价杂环基，A1表示-Z 1 - ，Z 2 -Z 3 - 或-Z 4 = Z 5 - ，其中Z 1，Z 2和Z 3表示O，S或 Z 4和Z 5表示N，B，P等，X 1，X 2，X 3，X 4，X 9，X 10，X 11和X 12表示卤素原子等。

7. 发明授权

US08307522B2 Machine tool and pallet standby station 有权
标题翻译：机床和托盘备用站
公开(公告)号：US08307522B2
公开(公告)日：2012-11-13
申请号：US12439026
申请日：2006-09-04
申请人： Satoshi Kobayashi
发明人： Satoshi Kobayashi
IPC分类号： B23Q7/00
CPC分类号： B23Q3/18 , B23Q1/0072 , Y10T29/5196
摘要： A machine tool and pallet standby station using a crane for changing a pallet between a table or pallet mounting table (27) of the machine tool and the pallet standby station are provided. The table (27) includes a plurality of guide pins (31) having tapered front ends, a plurality of elevatable lift pins (35) having spherical front ends, and a plurality of taper cones (37) having tapered outer peripheral surfaces. On the other hand, the pallet (P) includes at least two brackets (39) attached so as to project in the side directions from the two side surfaces of the pallet, and each bracket is formed with a guide hole (41) into which a guide pin (31) is inserted for rough positioning of the pallet. Further, the bottom of the pallet (P) is formed with a plurality of locate holes (45) having tapered inner peripheral surfaces and engaging with the spherical front ends of the lift pins for precision positioning of the pallet and a plurality of taper holes (47) having shapes complementary with the taper cones (37) and engaging with the taper cones for final positioning of the pallet.
摘要翻译：提供了一种使用起重机的机床和托盘备用站，用于在机床的工作台或托盘安装台（27）和托盘备用站之间更换托盘。工作台（27）包括具有锥形前端的多个导向销（31），具有球形前端的多个可升降提升销（35）和具有锥形外周表面的多个锥形锥体（37）。另一方面，托盘（P）包括至少两个托架（39），其从托盘的两个侧表面沿侧向突出安装，并且每个托架形成有引导孔（41），托架插入导销（31）用于托盘的粗略定位。此外，托盘（P）的底部形成有多个具有锥形内周面的定位孔（45），并与提升销的球形前端接合，用于托盘的精确定位和多个锥孔 47）具有与锥形锥体（37）互补的形状并与锥形锥体接合以最终定位托盘。

8. 发明授权

US08120030B2 Thin film transistor and display device 有权
标题翻译：薄膜晶体管和显示装置
公开(公告)号：US08120030B2
公开(公告)日：2012-02-21
申请号：US12633067
申请日：2009-12-08
申请人： Hiromichi Godo , Satoshi Kobayashi , Hidekazu Miyairi , Toshiyuki Isa , Shunpei Yamazaki
发明人： Hiromichi Godo , Satoshi Kobayashi , Hidekazu Miyairi , Toshiyuki Isa , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L27/12 , H01L29/04
摘要： Off current of a bottom gate thin film transistor in which a semiconductor layer is shielded from light by a gate electrode is reduced. A thin film transistor includes a gate electrode layer; a first semiconductor layer; a second semiconductor layer, provided on and in contact with the first semiconductor layer; a gate insulating layer between and in contact with the gate electrode layer and the first semiconductor layer; impurity semiconductor layers in contact with the second semiconductor layer; and source and drain electrode layers partially in contact with the impurity semiconductor layers and the first and second semiconductor layers. The entire surface of the first semiconductor layer on the gate electrode layer side is covered by the gate electrode layer; and a potential barrier at a portion where the first semiconductor layer is in contact with the source or drain electrode layer is 0.5 eV or more.
摘要翻译：其中半导体层被栅极电极遮挡光的底栅薄膜晶体管的截止电流减小。薄膜晶体管包括栅电极层; 第一半导体层; 第二半导体层，设置在第一半导体层上并与第一半导体层接触; 在栅极电极层和第一半导体层之间并与之接触的栅极绝缘层; 与第二半导体层接触的杂质半导体层; 以及与杂质半导体层和第一和第二半导体层部分接触的源极和漏极电极层。栅极电极层侧的第一半导体层的整个表面被栅电极层覆盖; 并且在第一半导体层与源极或漏极电极层接触的部分处的势垒为0.5eV以上。

9. 发明授权

US08089061B2 Quantum dot inorganic electroluminescent device 失效
标题翻译：量子点无机电致发光器件
公开(公告)号：US08089061B2
公开(公告)日：2012-01-03
申请号：US12227932
申请日：2007-06-04
申请人： Satoshi Kobayashi , Yuki Iguchi
发明人： Satoshi Kobayashi , Yuki Iguchi
IPC分类号： H01L33/00
CPC分类号： C09K11/025 , C09K11/565 , H05B33/10 , H05B33/14 , Y10S977/774 , Y10S977/95
摘要： An inorganic EL device is provided with a substrate, a first electrode, a first insulating layer, a light emitting layer, a second insulating layer and a second electrode. The inorganic EL light emitting device is characterized in that the light emitting layer contains a quantum dot and is arranged between the first insulating layer and the second insulating layer by being brought into contact with each of the insulating layers.
摘要翻译：无机EL器件设置有衬底，第一电极，第一绝缘层，发光层，第二绝缘层和第二电极。无机EL发光器件的特征在于，发光层包含量子点，并且通过与每个绝缘层接触而布置在第一绝缘层和第二绝缘层之间。

10. 发明授权

US08047532B2 Feed device and recording device 有权
标题翻译：进纸装置和记录装置
公开(公告)号：US08047532B2
公开(公告)日：2011-11-01
申请号：US12547703
申请日：2009-08-26
申请人： Satoshi Kobayashi
发明人： Satoshi Kobayashi
IPC分类号： B65H3/52
CPC分类号： B65H3/0661 , B65H3/56 , B65H2402/545 , B65H2801/06
摘要： Provided is a feed device including: a loading unit in which a plurality of sheet members is loaded in a stacked state; a delivery member which performs a feed operation in a state in which a contact surface thereof is in contact with an uppermost sheet member of the sheet members loaded on the loading unit and delivers the sheet member in a feed direction using the frictional force with the uppermost sheet member as the feeding force; a gate member which is configured to move in a direction to and or from the contact surface of the delivery member and has an inclined surface with which a front end of the sheet member delivered by the delivery member collides with; and a gate energizing member which energizes the gate member in a direction approaching to the contact surface of the delivery member.
摘要翻译：提供了一种进给装置，包括：加载单元，其中多个片状构件以堆叠状态装载; 传送部件，其在与其装载在装载单元上的片状部件的最上部片状部件接触的状态下进行进给动作，并使用最上部的摩擦力将片材部件沿进给方向传送片材作为喂料力; 门构件，其构造成沿着与所述输送构件的所述接触表面的方向移动并且具有倾斜表面，所述输送构件输送的所述片材的前端与所述倾斜表面碰撞; 以及栅极通电构件，其在接近所述输送构件的接触表面的方向上激励所述门构件。

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