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    • 1. 发明授权
    • Semiconductor storage device
    • 半导体存储设备
    • US08750052B2
    • 2014-06-10
    • US13370701
    • 2012-02-10
    • Satoshi AokiKazuo HatakeyamaYasushi Nakajima
    • Satoshi AokiKazuo HatakeyamaYasushi Nakajima
    • G11C16/04
    • G11C16/0483G11C16/14G11C16/344
    • A memory includes a sense amplifier connected to one or more of bit lines and configured to sense data stored in the memory cells; and a word line driver configured to control a voltage of one or more of word lines. The memory cells constitute a memory block. The memory cells constitute a memory block being a unit of memory cells on which a data erasing operation is performed. A controller changes an erase condition during the data erasing operation performed on the memory block or a verify condition for a verify check of verifying whether the data has been erased from the memory cells in the memory block, in proportion to a ratio of number of predetermined logical value data to the data in the memory block or the page before the data erasing operation.
    • 存储器包括连接到位线中的一个或多个并且被配置为感测存储在存储器单元中的数据的读出放大器; 以及被配置为控制字线中的一个或多个的电压的字线驱动器。 存储单元构成存储块。 存储器单元构成存储器块,其是执行数据擦除操作的存储器单元的单元。 控制器在对存储器块执行的数据擦除操作期间改变擦除条件,或者根据预定的数量的比例,与存储器块中的存储器单元相比,验证数据是否被擦除的验证条件 逻辑值数据到存储器块中的数据或数据擦除操作之前的页面。
    • 3. 发明授权
    • Information processing apparatus
    • 信息处理装置
    • US09268577B2
    • 2016-02-23
    • US13973046
    • 2013-08-22
    • Tamon SadasueSatoshi MoriNaoya OhashiSatoshi AokiNaoya Morita
    • Tamon SadasueSatoshi MoriNaoya OhashiSatoshi AokiNaoya Morita
    • G06F9/44G06F12/02
    • G06F9/4401G06F9/448G06F12/0284
    • An information processing apparatus includes a processor that executes an instruction stored in a fixed address area in a storage part; the storage part that stores a first startup program and a second startup program, contents of the second startup program being different at least partially from those of the first startup program; and an address conversion part that, when the processor carries out a predetermined startup different from an ordinary startup that is carried out at a time of starting power supply to the information processing apparatus, converts an address included in a read instruction issued by the processor indicating a storage area that stores the first startup program into an address indicating an other storage area that stores the second startup program, and sends the converted address to the storage part.
    • 信息处理装置包括执行存储在存储部分中的固定地址区域中的指令的处理器; 存储部分,其存储第一启动程序和第二启动程序,所述第二启动程序的内容至少部分地不同于所述第一启动程序的内容; 以及地址转换部分,当处理器执行不同于在向信息处理设备开始供电时执行的普通启动的预定启动时,转换由处理器发出的读取指令中包括的地址,指示 存储区域,其将第一启动程序存储到指示存储第二启动程序的其他存储区域的地址中,并将转换的地址发送到存储部。
    • 6. 发明申请
    • DEVICE, METHOD AND PROGRAM FOR PREVENTING INFORMATION LEAKAGE
    • 用于防止信息泄漏的设备,方法和程序
    • US20140026226A1
    • 2014-01-23
    • US14007175
    • 2012-03-16
    • Satoshi AokiManabu Kameda
    • Satoshi AokiManabu Kameda
    • G06F21/62
    • G06F21/6245G06F21/51G06F21/6263H04L67/02
    • Provided is a device for preventing information leakage including: a storage unit that stores message time, request source information, and request destination information in relation to each information requesting message; a unit that suspends a response message containing personal information in response messages in response to the information requesting messages, for a predetermined suspended time from a message time of the corresponding information requesting message; a unit that counts the number of information requesting messages transmitted from the same request source to the same destination and corresponding to the suspended response message on the basis of information stored in the storage unit; and a unit that, in the case where the counted number of the information requesting messages exceeds a predetermined threshold value, applies a protection process to the suspended response message so that the personal information contained in the suspended response message is not received by the request source.
    • 提供了一种用于防止信息泄露的装置,包括:存储单元,其存储关于每个信息请求消息的消息时间,请求源信息和请求目的地信息; 响应于所述信息请求消息而在响应消息中包含个人信息的响应消息的单元,从相应信息请求消息的消息时间起预定的暂停时间; 基于存储在存储单元中的信息,计数从相同请求源发送到相同目的地并对应于暂停的响应消息的信息请求数量的单元; 以及在所述信息请求消息的所计数的数量超过预定阈值的情况下,对所述暂停的响应消息应用保护处理,使得所述暂停的响应消息中包含的个人信息未被所述请求源接收的单元 。
    • 7. 发明授权
    • Magnetic pole position estimation method for AC synchronous motor
    • 交流同步电机磁极位置估算方法
    • US08593087B2
    • 2013-11-26
    • US12678888
    • 2008-11-14
    • Kei TeradaSatoshi Aoki
    • Kei TeradaSatoshi Aoki
    • H02P21/00
    • H02P21/0035H02P21/18H02P21/22H02P21/24
    • If there is static friction, the magnetic pole position estimation is completed at the time when error torque used for magnetic pole position estimation becomes less than the friction, so that there remains magnetic pole error. A problem has been that when the error torque becomes less than a forward static friction, there remains a positive magnetic pole deviation and when the error torque becomes less than a backward static friction, there remains a negative magnetic pole deviation. By shifting in the negative direction and the positive direction initial values for estimating a magnetic pole error in operation sets, a true pole-error estimation value is estimated in the use of a pole-error estimation value having a positive magnetic pole error obtained by the positive shift operation and a negative one obtained by the negative shift operation, which can reduce estimation error due to the static friction.
    • 如果存在静摩擦,磁极位置估计在用于磁极位置估计的误差转矩小于摩擦时完成磁极位置估计,从而保持磁极误差。 一个问题是,当误差转矩小于正向静摩擦时,仍然存在正磁极偏移,当误差转矩小于反向静摩擦时,仍然存在负磁极偏差。 通过在负方向和正方向上移动用于估计操作组中的磁极误差的初始值,在使用由具有正磁极误差的极性误差估计值得到的极性误差估计值时,估计真正的极点误差估计值 正偏移操作和通过负移位操作获得的负移动操作,这可以减少由于静摩擦引起的估计误差。
    • 9. 发明申请
    • Method for Manufacturing Chalcopyrite Thin-Film Solar Cell
    • 制造黄铜矿薄膜太阳能电池的方法
    • US20080283389A1
    • 2008-11-20
    • US11568776
    • 2005-04-12
    • Satoshi Aoki
    • Satoshi Aoki
    • C23C14/00
    • H01L31/0322Y02E10/541Y02P70/521
    • A method for fabricating a chalcopyrite-type thin film solar cell includes a first step of forming onto a Mo electrode layer 2 a precursor including an In metal layer and a Cu—Ga alloy layer by sputtering, a second step of attaching an alkali-metal solution onto the precursor, a selenization step of subjecting the substrate 1 which has undergone both the first and the second steps to a selenization treatment, and a transparent electrode forming step of depositing an optically transparent conductive layer. As the alkali-metal solution, an aqueous solution of an alkali metal compound, such as sodium tetraborate, sodium sulfide, and sodium aluminum sulfate, can be used.
    • 制造黄铜矿型薄膜太阳能电池的方法包括:第一步骤,通过溅射在Mo电极层2上形成包含In金属层和Cu-Ga合金层的前体,第二步是将碱金属 将上述第一和第二步骤的基板1进行硒化处理的硒化工序,以及沉积光学透明导电层的透明电极形成步骤。 作为碱金属溶液,可以使用四硼酸钠,硫化钠,硫酸铝钠等碱金属化合物的水溶液。