专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08750052B2 Semiconductor storage device 失效
标题翻译：半导体存储设备
公开(公告)号：US08750052B2
公开(公告)日：2014-06-10
申请号：US13370701
申请日：2012-02-10
申请人： Satoshi Aoki , Kazuo Hatakeyama , Yasushi Nakajima
发明人： Satoshi Aoki , Kazuo Hatakeyama , Yasushi Nakajima
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , G11C16/14 , G11C16/344
摘要： A memory includes a sense amplifier connected to one or more of bit lines and configured to sense data stored in the memory cells; and a word line driver configured to control a voltage of one or more of word lines. The memory cells constitute a memory block. The memory cells constitute a memory block being a unit of memory cells on which a data erasing operation is performed. A controller changes an erase condition during the data erasing operation performed on the memory block or a verify condition for a verify check of verifying whether the data has been erased from the memory cells in the memory block, in proportion to a ratio of number of predetermined logical value data to the data in the memory block or the page before the data erasing operation.
摘要翻译：存储器包括连接到位线中的一个或多个并且被配置为感测存储在存储器单元中的数据的读出放大器; 以及被配置为控制字线中的一个或多个的电压的字线驱动器。存储单元构成存储块。存储器单元构成存储器块，其是执行数据擦除操作的存储器单元的单元。控制器在对存储器块执行的数据擦除操作期间改变擦除条件，或者根据预定的数量的比例，与存储器块中的存储器单元相比，验证数据是否被擦除的验证条件逻辑值数据到存储器块中的数据或数据擦除操作之前的页面。

2. 发明授权

US5959888A Non-volatile semiconductor memory device and method of manufacturing non-volatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件及制造非易失性半导体存储器件的方法
公开(公告)号：US5959888A
公开(公告)日：1999-09-28
申请号：US72987
申请日：1998-05-06
申请人： Hitoshi Araki , Kazuo Hatakeyama
发明人： Hitoshi Araki , Kazuo Hatakeyama
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324 , H01L29/7883
摘要： The non-volatile semiconductor device includes a sub control gate in addition to the conventional structure having a control gate and a floating gate. When writing or erasing is performed, by applying various to the control gate and the sub control gate, the potential of the floating gate which is capacitively connected to the control and sub control gates is determined. Accordingly, the floating gate voltage is maintained at lower control voltage compared to conventional one by selecting larger coupling ratio. The sub control gate covering a part where charge concentration apt to occur avoids charge concentration and deterioration of the tunnel oxide film.
摘要翻译：除了具有控制栅极和浮动栅极的常规结构之外，非易失性半导体器件还包括子控制栅极。当执行写入或擦除时，通过对控制栅极和子控制栅极进行各种应用，确定与控制和子控制栅极电容连接的浮动栅极的电位。因此，通过选择较大的耦合比，浮动栅极电压比常规栅极电压保持在较低的控制电压。覆盖易于发生电荷浓度的部分的子控制栅极避免了电荷浓度和隧道氧化膜的劣化。

3. 发明申请

US20070007582A1 Semiconductor device including a floating gate electrode having stacked structure 审中-公开
标题翻译：包括具有层叠结构的浮栅的半导体装置
公开(公告)号：US20070007582A1
公开(公告)日：2007-01-11
申请号：US11455645
申请日：2006-06-20
申请人： Kazuo Hatakeyama
发明人： Kazuo Hatakeyama
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L27/115 , H01L27/11521 , H01L29/40114
摘要： A semiconductor device includes a semiconductor layer having a plurality of element regions in its surface area, which are delimited by at least one element isolation trench, a plurality of floating gate electrodes provided on the element regions with a first gate insulation film interposed therebetween and each including a first charge-storage layer having a first width which is equal to that of each of the element regions and a second charge-storage layer stacked on the first charge-storage layer and having a second width which is smaller than the first width, and a plurality of control gate electrodes provided on the floating gate electrodes with a second gate insulation films interposed therebetween. The device further includes an element isolating insulation film buried into the element isolation trench. The top surface of the element isolating insulation film is located higher than that of the first charge-storage layer.
摘要翻译：半导体器件包括其表面区域中具有多个元件区域的半导体层，其由至少一个元件隔离沟槽限定;多个浮置栅极电极，设置在元件区域上，第一栅极绝缘膜介于其间，包括具有与每个元件区域相同的第一宽度的第一电荷存储层和堆叠在第一电荷存储层上并且具有小于第一宽度的第二宽度的第二电荷存储层，以及设置在所述浮栅上的多个控制栅极，其间具有第二栅极绝缘膜。该器件还包括埋入元件隔离沟槽中的元件隔离绝缘膜。元件隔离绝缘膜的上表面位于比第一电荷存储层高的位置。

4. 发明申请

US20080137421A1 PATTERN LAYOUT OF INTEGRATED CIRCUIT 失效
标题翻译：集成电路图案布局
公开(公告)号：US20080137421A1
公开(公告)日：2008-06-12
申请号：US11943771
申请日：2007-11-21
申请人： Yasunobu KAI , Kazuo Hatakeyama , Hidefumi Mukai , Hiromitsu Mashita , Koji Hashimoto
发明人： Yasunobu KAI , Kazuo Hatakeyama , Hidefumi Mukai , Hiromitsu Mashita , Koji Hashimoto
IPC分类号： G11C11/34 , B41M5/00 , G03G13/00
CPC分类号： H01L27/0207 , G11C5/025 , H01L27/115 , Y10T428/24802
摘要： In a pattern layout which includes a first device pattern having a uniformly repeated pattern group having first lines and first spaces formed parallel to one anther and uniformly arranged with constant width at a constant pitch and a non-uniformly repeated pattern group having first lines and first spaces non-uniformly arranged, and a second device pattern arranged adjacent to the end portion of the non-uniformly repeated pattern group in an arrangement direction thereof and having second lines and second spaces whose widths are larger than the widths of the first lines and first spaces of the non-uniformly repeated pattern group, at least part of the widths of the first lines and the first spaces of the non-uniformly repeated pattern group is made larger than the width of the first line or the width of the first space of the uniformly repeated pattern group.
摘要翻译：在图案布局中，包括具有均匀重复的图案组的第一装置图案，该第一装置图案具有第一线和平行于一个花柱形成的第一间隔，并且以恒定间距均匀地布置，并且具有第一线和第一线的不均匀重复的图案组以及与其非排列方向上的非均匀重复图形组的端部相邻排列的第二装置图案，并且具有第二线和第二空间，第二线和第二空间的宽度大于第一线和第一线的宽度不均匀重复图案组的空间，使不均匀重复图案组的第一线和第一空间的宽度的至少一部分大于第一线的宽度或第一空间的第一空间的宽度均匀重复模式组。

5. 发明授权

US07749839B2 Semiconductor device including a floating gate electrode having stacked structure 失效
标题翻译：包括具有层叠结构的浮栅的半导体装置
公开(公告)号：US07749839B2
公开(公告)日：2010-07-06
申请号：US12050802
申请日：2008-03-18
申请人： Kazuo Hatakeyama
发明人： Kazuo Hatakeyama
IPC分类号： H01L21/8247
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/115 , H01L27/11521
摘要： A semiconductor device includes a semiconductor layer having a plurality of element regions in its surface area, which are delimited by at least one element isolation trench, a plurality of floating gate electrodes provided on the element regions with a first gate insulation film interposed therebetween and each including a first charge-storage layer having a first width which is equal to that of each of the element regions and a second charge-storage layer stacked on the first charge-storage layer and having a second width which is smaller than the first width, and a plurality of control gate electrodes provided on the floating gate electrodes with a second gate insulation films interposed therebetween. The device further includes an element isolating insulation film buried into the element isolation trench. The top surface of the element isolating insulation film is located higher than that of the first charge-storage layer.
摘要翻译：半导体器件包括其表面区域中具有多个元件区域的半导体层，其由至少一个元件隔离沟槽限定;多个浮置栅极电极，设置在元件区域上，第一栅极绝缘膜介于其间，包括具有与每个元件区域相同的第一宽度的第一电荷存储层和堆叠在第一电荷存储层上并且具有小于第一宽度的第二宽度的第二电荷存储层，以及设置在所述浮栅上的多个控制栅极，其间具有第二栅极绝缘膜。该器件还包括埋入元件隔离沟槽中的元件隔离绝缘膜。元件隔离绝缘膜的上表面位于比第一电荷存储层高的位置。

6. 发明授权

US07941782B2 Pattern layout of integrated circuit 失效
标题翻译：集成电路图案布局
公开(公告)号：US07941782B2
公开(公告)日：2011-05-10
申请号：US11943771
申请日：2007-11-21
申请人： Yasunobu Kai , Kazuo Hatakeyama , Hidefumi Mukai , Hiromitsu Mashita , Koji Hashimoto
发明人： Yasunobu Kai , Kazuo Hatakeyama , Hidefumi Mukai , Hiromitsu Mashita , Koji Hashimoto
IPC分类号： G06F17/50
CPC分类号： H01L27/0207 , G11C5/025 , H01L27/115 , Y10T428/24802
摘要： In a pattern layout which includes a first device pattern having a uniformly repeated pattern group having first lines and first spaces formed parallel to one anther and uniformly arranged with constant width at a constant pitch and a non-uniformly repeated pattern group having first lines and first spaces non-uniformly arranged, and a second device pattern arranged adjacent to the end portion of the non-uniformly repeated pattern group in an arrangement direction thereof and having second lines and second spaces whose widths are larger than the widths of the first lines and first spaces of the non-uniformly repeated pattern group, at least part of the widths of the first lines and the first spaces of the non-uniformly repeated pattern group is made larger than the width of the first line or the width of the first space of the uniformly repeated pattern group.
摘要翻译：在图案布局中，包括具有均匀重复的图案组的第一装置图案，该第一装置图案具有第一线和平行于一个花柱形成的第一间隔，并且以恒定间距均匀地布置，并且具有第一线和第一线的不均匀重复的图案组以及与其非排列方向上的非均匀重复图形组的端部相邻排列的第二装置图案，并且具有第二线和第二空间，第二线和第二空间的宽度大于第一线和第一线的宽度不均匀重复图案组的空间，使不均匀重复图案组的第一线和第一空间的宽度的至少一部分大于第一线的宽度或第一空间的第一空间的宽度均匀重复模式组。

7. 发明授权

US5607201A Vehicle seat having an overlayer unbound to an underlayer that is bound to a seat pad 失效
标题翻译：车辆座椅具有未绑定到与座垫接合的底层的覆盖层
公开(公告)号：US5607201A
公开(公告)日：1997-03-04
申请号：US334485
申请日：1994-11-04
申请人： Hideki Irie , Kazuo Hatakeyama
发明人： Hideki Irie , Kazuo Hatakeyama
IPC分类号： A47C31/02 , A47C7/24 , B68G7/05 , A47C7/02
CPC分类号： A47C7/24 , Y10S297/01
摘要： A vehicle seat includes an outer skin layer, which covers the seat cushion or seat back. The seat cushion or seat back is integrally formed with a fastener disposed on a main surface portion thereof. The main surface portion has an underlayer disposed under an overlayer, which includes an outerskin surface, freely disposed over the underlayer. The overlayer and the underlayer are joined only along common edge portions thereof while the surface areas thereof are not attached. The lower side of the second underlayer is affixed to the fastener disposed on the seat cushion or seat back. Each of the skin layer and the overlayer and underlayer may be of two or three ply construction including a backing material and a wadding layer. This construction allows high assembly efficiency with a reduced number of parts. Further, disassembly of seat components for recycling is also simplified while enhanced appearance of the installed seat cover is easily accomplished.
摘要翻译：车辆座椅包括覆盖座垫或座椅靠背的外皮层。座垫或座椅靠背与设置在其主表面部分上的紧固件整体形成。主表面部分具有设置在覆盖层下方的底层，其包括自由地设置在底层上的外皮表面。覆盖层和底层仅沿其公共边缘部分连接，而其表面区域未附接。第二底层的下侧固定在设置在座垫或座椅靠背上的紧固件上。表皮层和覆盖层和底层中的每一个可以是包括背衬材料和填充层的两层或三层结构。这种结构允许以较少的部件数量实现高的组装效率。此外，也简化了用于回收的座椅部件的拆卸，同时容易实现安装的座椅盖的增强外观。

8. 发明授权

US4838438A Crane and driving system therefor 失效
标题翻译：起重机和驾驶系统
公开(公告)号：US4838438A
公开(公告)日：1989-06-13
申请号：US053482
申请日：1987-05-26
申请人： Ryohei Ishige , Kazuo Hatakeyama
发明人： Ryohei Ishige , Kazuo Hatakeyama
IPC分类号： B66C13/12 , B66C13/22 , B66C13/23 , B66C19/00 , H02J13/00
CPC分类号： B66C13/22 , B66C19/007 , H02J13/0003
摘要： A crane provided with traveling wheels disposed under a crane frame. The crane includes a hoisting accessory which is adapted to be hoisted by a hoist apparatus. AC motors are provided as travel motors for driving the traveling wheels as well as hoist motors for driving the hoist apparatus. The crane is equipped with a DC power source generating DC power, inverter units converting the DC power into AC power and outputting the AC power, and a change-over or switching arrangement for supplying the AC power to the travel motors when the crane is being moved and to the hoist motors during a hoisting operation of the hoisting accessory.
摘要翻译：起重机架设有起重机的起重机。起重机包括适于由起重装置提升的提升附件。交流电动机作为用于驱动行驶车轮的行驶马达以及用于驱动提升装置的起重马达提供。起重机配有直流电源，产生直流电源，逆变器单元将直流电转换为交流电源并输出交流电源，以及切换或切换装置，用于在起重机正在运行时向行驶马达提供交流电在提升配件的起重作业中移动到起重机电机。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式