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1. 发明申请

US20100224862A1 CARBON NANOTUBE STRUCTURE AND THIN FILM TRANSISTOR 审中-公开
标题翻译：碳纳米管结构和薄膜晶体管
公开(公告)号：US20100224862A1
公开(公告)日：2010-09-09
申请号：US12675933
申请日：2008-09-02
申请人： Hiroyuki Endoh , Satoru Toguchi , Hideaki Numata
发明人： Hiroyuki Endoh , Satoru Toguchi , Hideaki Numata
IPC分类号： H01L29/772 , B32B15/08
CPC分类号： H01L51/105 , B82Y10/00 , H01L51/0036 , H01L51/0048 , H01L51/0545 , H01L51/0579 , H01L51/0583 , H05K3/249 , H05K2201/026 , H05K2201/0329 , Y10T428/254
摘要： When an electronic element using a carbon nanotube (CNT) is fabricated, particularly when a carbon nanotube thin film is formed on a previously formed electrode, a CNT film is manufactured on the previously formed electrode, and the CNT film on the electrode is used as an electronic element, as it is. In this case, a problem is that unless the carbon nanotubes and the electrode are in sufficient contact with each other, the contact resistance increases, and sufficient element properties are not obtained. When a carbon nanotube thin film is formed on a previously formed electrode, a conductive organic polymer thin film is formed, before or after the carbon nanotube thin film is manufactured, to decrease the contact resistance.
摘要翻译：当制造使用碳纳米管（CNT）的电子元件时，特别是当在预先形成的电极上形成碳纳米管薄膜时，在预先形成的电极上制造CNT膜，将电极上的CNT膜用作一个电子元件，因为它是。在这种情况下，问题在于，除非碳纳米管和电极彼此充分接触，否则接触电阻增加，并且不能获得足够的元素特性。当在预先形成的电极上形成碳纳米管薄膜时，在制造碳纳米管薄膜之前或之后形成导电有机聚合物薄膜以降低接触电阻。

2. 发明申请

US20100163858A1 SWITCHING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：切换元件及其制造方法
公开(公告)号：US20100163858A1
公开(公告)日：2010-07-01
申请号：US12676218
申请日：2008-09-08
申请人： Satoru Toguchi , Hideaki Numata , Hiroyuki Endoh
发明人： Satoru Toguchi , Hideaki Numata , Hiroyuki Endoh
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/105 , B82Y10/00 , G02B1/041 , H01L51/0003 , H01L51/0048 , H01L51/0541 , H01L51/0545 , C08L101/12
摘要： A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.
摘要翻译：可以在低温下制造的碳纳米管（CNT）分散膜用于活性层的开关元件的问题是，不能获得CNT与源极和漏极表面之间的充分的电接触和导热性。本发明的开关元件具有这样的结构，其中碳纳米管和金属材料的混合层以及金属材料的金属层依次层叠在源极和漏极上，由此，CNT分散膜并且电极表面可以彼此牢固的电，机械和热接触。因此，以低温，方便，低成本的方法获得了表现出良好且稳定的晶体管特性的开关元件。

3. 发明申请

US20110114914A1 FIELD EFFECT TRANSISTOR AND CIRCUIT DEVICE 审中-公开
标题翻译：场效应晶体管和电路器件
公开(公告)号：US20110114914A1
公开(公告)日：2011-05-19
申请号：US13055807
申请日：2009-06-19
申请人： Hideaki Numata , Satoru Toguchi , Hiroyuki Endoh
发明人： Hideaki Numata , Satoru Toguchi , Hiroyuki Endoh
IPC分类号： H01L29/12 , B82Y99/00
CPC分类号： H01L27/12 , H01L27/0203 , H01L27/1225 , H01L27/1285 , H01L27/1292 , H01L29/0673 , H01L29/41733 , H01L29/66765
摘要： An end portion (104a) of a first source electrode (104) and an end portion (105a) of a first drain electrode (105) face each other on a gate insulating film (103) via a channel formation region. The first source electrode (104) and first drain electrode (105) extend over steps, and the end portion (104a) and end portion (105a) face each other on the gate insulating film (103). The highest portions of the end portion (104a) and end portion (105a) are formed higher than the upper surface of the gate insulating film (103) serving as the channel formation region. A field-effect transistor of this invention also includes a second source electrode (107) which is formed in contact with the channel layer (106) and connects the first source electrode (104) and channel layer (106), and a second drain electrode (108) which is formed in contact with the channel layer (106) and connects, the first drain electrode (105) and channel layer (106).
摘要翻译：第一源电极（104）的端部（104a）和第一漏极（105）的端部（105a）经由沟道形成区域彼此面对栅极绝缘膜（103）。第一源电极（104）和第一漏电极（105）在台阶上延伸，并且端部（104a）和端部（105a）在栅极绝缘膜（103）上彼此面对。端部（104a）和端部（105a）的最高部分形成为高于用作沟道形成区域的栅极绝缘膜（103）的上表面。本发明的场效应晶体管还包括形成为与沟道层（106）接触并连接第一源电极（104）和沟道层（106）的第二源电极（107）和第二漏电极（108），其与所述沟道层（106）接触形成并连接所述第一漏电极（105）和沟道层（106）。

4. 发明授权

US08309992B2 Switching element including carbon nanotubes and method for manufacturing the same 有权
标题翻译：包括碳纳米管的开关元件及其制造方法
公开(公告)号：US08309992B2
公开(公告)日：2012-11-13
申请号：US12676218
申请日：2008-09-08
申请人： Satoru Toguchi , Hideaki Numata , Hiroyuki Endoh
发明人： Satoru Toguchi , Hideaki Numata , Hiroyuki Endoh
IPC分类号： H01L29/76
CPC分类号： H01L51/105 , B82Y10/00 , G02B1/041 , H01L51/0003 , H01L51/0048 , H01L51/0541 , H01L51/0545 , C08L101/12
摘要： A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.
摘要翻译：可以在低温下制造的碳纳米管（CNT）分散膜用于活性层的开关元件的问题是，不能获得CNT与源极和漏极表面之间的充分的电接触和导热性。本发明的开关元件具有这样的结构，其中碳纳米管和金属材料的混合层以及金属材料的金属层依次层叠在源极和漏极上，由此，CNT分散膜并且电极表面可以彼此牢固的电，机械和热接触。因此，以低温，方便，低成本的方法获得了表现出良好且稳定的晶体管特性的开关元件。

5. 发明授权

US08389987B2 Switching element and method for fabricating same 有权
标题翻译：开关元件及其制造方法
公开(公告)号：US08389987B2
公开(公告)日：2013-03-05
申请号：US13127761
申请日：2009-11-09
申请人： Satoru Toguchi , Hiroyuki Endoh
发明人： Satoru Toguchi , Hiroyuki Endoh
IPC分类号： H01L29/08
CPC分类号： H01L21/02628 , B82Y10/00 , H01L21/02527 , H01L21/02606 , H01L51/0003 , H01L51/0048 , H01L51/0049 , H01L51/0541 , H01L51/0545 , H01L51/0566
摘要： A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.
摘要翻译：开关元件包括源电极，与源极分离的漏电极，与电极接触的有源层，以及与源电极和漏电极分开并与有源层接触的栅极，栅极与栅极绝缘层。有源层由含有预定碳纳米管和预定聚醚化合物的分散膜形成。

6. 发明授权

US07378683B2 Transistor using organic material having a bridged cyclic hydrocarbon lactone structure and process for producing the same 失效
标题翻译：使用具有桥连环烃内酯结构的有机材料的晶体管及其制造方法
公开(公告)号：US07378683B2
公开(公告)日：2008-05-27
申请号：US11103267
申请日：2005-04-11
申请人： Hiroyuki Endoh , Etsuo Hasegawa , Satoru Toguchi , Katsumi Maeda
发明人： Hiroyuki Endoh , Etsuo Hasegawa , Satoru Toguchi , Katsumi Maeda
IPC分类号： H01L29/08 , H01L51/40
CPC分类号： H01L51/052
摘要： An organic thin film transistor having an insulator layer formed of a polymer compound having a repeat unit represented by the following formula [1] is disclosed: wherein R1, R2 and R3 are each independently a hydrogen atom or a methyl group, R4 is a hydrogen atom or a linear, branched or bridged cyclic hydrocarbon group having 1 to 12 carbon atoms, and x and y are molar ratio and are any number satisfying x +y=1, 0
摘要翻译：公开了具有由具有由下式[1]表示的重复单元的高分子化合物形成的绝缘体层的有机薄膜晶体管：其中R 1，R 2和 R 3各自独立地为氢原子或甲基，R 4为氢原子或具有1至12个碳原子的直链，支链或桥连的环状烃基， x和y是摩尔比，并且是满足x + y = 1,0

7. 发明授权

US08101948B2 Switching element 有权
标题翻译：开关元件
公开(公告)号：US08101948B2
公开(公告)日：2012-01-24
申请号：US12665252
申请日：2008-02-19
申请人： Satoru Toguchi , Hiroyuki Endoh
发明人： Satoru Toguchi , Hiroyuki Endoh
IPC分类号： H01L29/10
CPC分类号： H01L51/052 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0545 , Y10S977/708 , Y10S977/742
摘要： In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased. Thereby, a switching element having good and stable transistor characteristics can be obtained by a low-temperature, simple, and inexpensive process.
摘要翻译：在对活性层使用能够在低温下制造的碳纳米管（CNT）分散膜的开关元件中，CNT与栅极绝缘膜的表面之间的相互作用不充分。因此，这种开关元件的问题在于固定在沟道区域中的CNT的量不足，导致均匀性不足。在示例性实施例的开关元件中，栅绝缘膜由非共轭聚合物材料形成，所述非共轭聚合物材料在主链中含有芳族基团和具有2个或更多个碳原子的取代或未取代的亚烷基或亚烷基氧基作为重复单元。结果，在保持栅极绝缘膜的柔性的同时，增强了CNT与栅极绝缘膜的表面之间的相互作用，并且可以增加固定在沟道区中的CNT的量。因此，通过低温，简单且廉价的工艺可以获得具有良好且稳定的晶体管特性的开关元件。

8. 发明申请

US20110215315A1 SWITCHING ELEMENT AND METHOD FOR FABRICATING SAME 有权
标题翻译：切换元件及其制造方法
公开(公告)号：US20110215315A1
公开(公告)日：2011-09-08
申请号：US13127761
申请日：2009-11-09
申请人： Satoru Toguchi , Hiroyuki Endoh
发明人： Satoru Toguchi , Hiroyuki Endoh
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L21/02628 , B82Y10/00 , H01L21/02527 , H01L21/02606 , H01L51/0003 , H01L51/0048 , H01L51/0049 , H01L51/0541 , H01L51/0545 , H01L51/0566
摘要： A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.
摘要翻译：开关元件包括源电极，与源极分离的漏电极，与电极接触的有源层，以及与源电极和漏电极分开并与有源层接触的栅极，栅极与栅极绝缘层。有源层由含有预定碳纳米管和预定聚醚化合物的分散膜形成。

9. 发明申请

US20100200838A1 SWITCHING ELEMENT 有权
标题翻译：开关元件
公开(公告)号：US20100200838A1
公开(公告)日：2010-08-12
申请号：US12665252
申请日：2008-02-19
申请人： Satoru Toguchi , Hiroyuki Endoh
发明人： Satoru Toguchi , Hiroyuki Endoh
IPC分类号： H01L29/78
CPC分类号： H01L51/052 , B82Y10/00 , H01L51/0048 , H01L51/0541 , H01L51/0545 , Y10S977/708 , Y10S977/742
摘要： In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased. Thereby, a switching element having good and stable transistor characteristics can be obtained by a low-temperature, simple, and inexpensive process.
摘要翻译：在对活性层使用能够在低温下制造的碳纳米管（CNT）分散膜的开关元件中，CNT与栅极绝缘膜的表面之间的相互作用不充分。因此，这种开关元件的问题在于固定在沟道区域中的CNT的量不足，导致均匀性不足。在示例性实施例的开关元件中，栅绝缘膜由非共轭聚合物材料形成，所述非共轭聚合物材料在主链中含有芳族基团和具有2个或更多个碳原子的取代或未取代的亚烷基或亚烷基氧基作为重复单元。结果，在保持栅极绝缘膜的柔性的同时，增强了CNT与栅极绝缘膜的表面之间的相互作用，并且可以增加固定在沟道区中的CNT的量。因此，通过低温，简单且廉价的工艺可以获得具有良好且稳定的晶体管特性的开关元件。

10. 发明申请

US20050230680A1 Transistor using organic material having a bridged cyclic hydrocarbon lactone structure and process for producing the same 失效
标题翻译：使用具有桥连环烃内酯结构的有机材料的晶体管及其制造方法
公开(公告)号：US20050230680A1
公开(公告)日：2005-10-20
申请号：US11103267
申请日：2005-04-11
申请人： Hiroyuki Endoh , Etsuo Hasegawa , Satoru Toguchi , Katsumi Maeda
发明人： Hiroyuki Endoh , Etsuo Hasegawa , Satoru Toguchi , Katsumi Maeda
IPC分类号： C08F120/28 , C08F220/06 , C08F220/18 , C08F220/28 , H01L29/08 , H01L29/786 , H01L51/00 , H01L51/05
CPC分类号： H01L51/052
摘要： An organic thin film transistor having an insulator layer formed of a polymer compound having a repeat unit represented by the following formula [1] is disclosed: wherein R1, R2 and R3 are each independently a hydrogen atom or a methyl group, R4 is a hydrogen atom or a linear, branched or bridged cyclic hydrocarbon group having 1 to 12 carbon atoms, and x and y are molar ratio and are any number satisfying x+y=1, 0≦x≦1 and 0≦y
摘要翻译：公开了具有由具有由下式[1]表示的重复单元的高分子化合物形成的绝缘体层的有机薄膜晶体管：其中R 1，R 2和 R 3各自独立地为氢原子或甲基，R 4为氢原子或具有1至12个碳原子的直链，支链或桥连的环状烃基， x和y是摩尔比，并且是满足x + y = 1,0 <= x <= 1和0 <= y <1的任何数。

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