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1. 发明申请

US20120187534A1 PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS 失效
标题翻译：用于高电容应用的氧化电介质的脉冲方法
公开(公告)号：US20120187534A1
公开(公告)日：2012-07-26
申请号：US13011946
申请日：2011-01-24
申请人： Bo Xie , Alexandros T. Demos , Juan Carlos Rocha-Alvarez , Sanjeev Baluja
发明人： Bo Xie , Alexandros T. Demos , Juan Carlos Rocha-Alvarez , Sanjeev Baluja
IPC分类号： H01L29/02 , H01L21/28
CPC分类号： H01L28/40 , H01L21/3105 , H01L28/90
摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.
摘要翻译：本发明提供用于制造存储单元的系统，方法和装置。本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。公开了许多附加方面。

2. 发明申请

US20130177706A1 METHOD FOR SEASONING UV CHAMBER OPTICAL COMPONENTS TO AVOID DEGRADATION 审中-公开
标题翻译：用于分解紫外线光学元件以避免降解的方法
公开(公告)号：US20130177706A1
公开(公告)日：2013-07-11
申请号：US13719047
申请日：2012-12-18
申请人： Sanjeev Baluja , Alexandros T. Demos , Bo Xie , Juan Carlos Rocha-Alvarez
发明人： Sanjeev Baluja , Alexandros T. Demos , Bo Xie , Juan Carlos Rocha-Alvarez
IPC分类号： B05D3/06
CPC分类号： B05D3/066 , C23C16/4404 , C23C16/4405
摘要： Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400° C. or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.
摘要翻译：公开了在UV处理室内的光学部件的暴露表面上沉积碳基调味剂层的方法。在一个实施例中，该方法包括使含碳前驱体从光学部件的圆周径向向内流过热处理室内的光学部件的暴露表面，将含碳前体暴露于从加热源发射的热辐射至在光学部件的暴露表面上形成碳基调味剂层，将碳基调味剂层暴露于臭氧，其中臭氧通过径向向内流过来自圆周的光学部件的暴露表面而将臭氧引入处理室的光学部件，将光学部件加热至约400℃以上的温度，同时使臭氧流动，以从光学部件的露出表面除去碳基调味剂层。

3. 发明授权

US08664061B2 Pulse method of oxidizing sidewall dielectrics for high capacitance applications 失效
标题翻译：用于高电容应用的氧化侧壁电介质的脉冲方法
公开(公告)号：US08664061B2
公开(公告)日：2014-03-04
申请号：US13011946
申请日：2011-01-24
申请人： Bo Xie , Alexandros T. Demos , Juan Carlos Rocha-Alvarez , Sanjeev Baluja
发明人： Bo Xie , Alexandros T. Demos , Juan Carlos Rocha-Alvarez , Sanjeev Baluja
IPC分类号： H01L21/28 , H01L21/8242
CPC分类号： H01L28/40 , H01L21/3105 , H01L28/90
摘要： The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed.
摘要翻译：本发明提供用于制造存储单元的系统，方法和装置。本发明包括在第一介电材料中形成具有侧壁的特征; 在所述特征的侧壁上形成第一导电材料; 在导电材料上沉积第二介电材料层; 以及将所述第二电介质材料暴露于氧化物质和紫外光以氧化所述第二电介质材料。公开了许多附加方面。

4. 发明授权

US08349746B2 Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure 有权
标题翻译：包括低k电介质的微电子结构和控制结构中碳分布的方法
公开(公告)号：US08349746B2
公开(公告)日：2013-01-08
申请号：US12660294
申请日：2010-02-23
申请人： Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
发明人： Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
IPC分类号： H01L21/469
CPC分类号： H01L21/02274 , C23C16/30 , C23C16/45523 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/7682 , H01L21/76832 , H01L21/76835
摘要： Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
摘要翻译：本发明的实施例涉及微电子结构的形成。对于32nm的下一个技术节点，低k电介质材料需要表现出小于约2.6的介电常数。本发明能够形成利用这种低k电介质材料的半导体器件，同时提供整体上微电子结构的改进的弯曲和剪切强度的完整性。

5. 发明授权

US08216861B1 Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition 有权
标题翻译：通过紫外辅助光化学沉积等离子体损伤低k膜的介电回收
公开(公告)号：US08216861B1
公开(公告)日：2012-07-10
申请号：US13171132
申请日：2011-06-28
申请人： Kang Sub Yim , Thomas Nowak , Bo Xie , Alexandros T. Demos
发明人： Kang Sub Yim , Thomas Nowak , Bo Xie , Alexandros T. Demos
IPC分类号： H01L21/00
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/76802 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76831
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供修复损坏的低k膜的方法。在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。包含紫外线（UV）辐射和含碳化合物的修复过程从孔中除去水，并进一步从低k膜结构中除去亲水性化合物。

6. 发明申请

US20120270339A1 UV ASSISTED SILYLATION FOR RECOVERY AND PORE SEALING OF DAMAGED LOW K FILMS 有权
标题翻译： UV辅助硅酸盐用于恢复和破坏低K膜的密封
公开(公告)号：US20120270339A1
公开(公告)日：2012-10-25
申请号：US13093351
申请日：2011-04-25
申请人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
发明人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
IPC分类号： H01L21/30
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供修复损坏的低k膜的方法。在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

7. 发明申请

US20110204492A1 Microelectronic structure including a low K dielectric and a method of controlling carbon distribution in the structure 有权
标题翻译：包括低K电介质的微电子结构和控制结构中碳分布的方法
公开(公告)号：US20110204492A1
公开(公告)日：2011-08-25
申请号：US12660294
申请日：2010-02-23
申请人： Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
发明人： Bo Xie , Alexandros T. Demos , Daemian Raj , Sure Ngo , Kang Sub Yim
IPC分类号： H01L23/00 , H01L21/316
CPC分类号： H01L21/02274 , C23C16/30 , C23C16/45523 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/7682 , H01L21/76832 , H01L21/76835
摘要： Embodiments of the present invention pertain to the formation of microelectronic structures. Low k dielectric materials need to exhibit a dielectric constant of less than about 2.6 for the next technology node of 32 nm. The present invention enables the formation of semiconductor devices which make use of such low k dielectric materials while providing an improved flexural and shear strength integrity of the microelectronic structure as a whole.
摘要翻译：本发明的实施例涉及微电子结构的形成。对于32nm的下一个技术节点，低k电介质材料需要表现出小于约2.6的介电常数。本发明能够形成利用这种低k电介质材料的半导体器件，同时提供整体上微电子结构的改进的弯曲和剪切强度的完整性。

8. 发明授权

US08492170B2 UV assisted silylation for recovery and pore sealing of damaged low K films 有权
标题翻译： UV辅助甲硅烷基化用于恢复和损坏的低K膜的孔密封
公开(公告)号：US08492170B2
公开(公告)日：2013-07-23
申请号：US13093351
申请日：2011-04-25
申请人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
发明人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
IPC分类号： H01L21/30
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供修复损坏的低k膜的方法。在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

9. 发明申请

US20120133313A1 System And Method For Estimating A Generator Rotor Temperature In An Electric Drive Machine 有权
标题翻译：用于估计电动机中发电机转子温度的系统和方法
公开(公告)号：US20120133313A1
公开(公告)日：2012-05-31
申请号：US12956385
申请日：2010-11-30
申请人： Bo Xie , Suresh B. Reddy , Matt Hendrickson
发明人： Bo Xie , Suresh B. Reddy , Matt Hendrickson
IPC分类号： H02H7/08 , B60W20/00
CPC分类号： B60W20/50 , B60W10/08 , B60W20/00 , B60W30/1843 , B60W40/12 , B60W50/045 , B60W2050/0008 , B60W2050/0012 , B60W2510/0638 , B60W2510/085 , B60W2510/087 , B60W2550/12 , H02H7/0852
摘要： An electric drive machine includes an electric drive system including an internal combustion engine and an electrical power generator coupled to the internal combustion engine. An electronic controller is in control communication with the electric drive system and is configured to determine an estimated temperature of a rotor of the electrical power generator at least in part by determining a rotor temperature rise estimation, compare the estimated rotor temperature to a rotor temperature threshold, and initiate an excessive temperature action if the estimated rotor temperature is greater than or equal to the rotor temperature threshold.
摘要翻译：电驱动机器包括电驱动系统，其包括内燃机和耦合到内燃机的发电机。电子控制器与电力驱动系统进行控制通信，并且被配置为至少部分地通过确定转子温度上升估计来确定发电机的转子的估计温度，将估计的转子温度与转子温度阈值进行比较并且如果估计的转子温度大于或等于转子温度阈值，则启动过度的温度动作。

10. 发明申请

US20080053486A1 Semiconductor substrate cleaning apparatus 审中-公开
标题翻译：半导体基板清洗装置
公开(公告)号：US20080053486A1
公开(公告)日：2008-03-06
申请号：US11891339
申请日：2007-08-09
申请人： Jianshe Tang , Wei Lu , Zhiyong Li , Bo Xie , Alexander Ko
发明人： Jianshe Tang , Wei Lu , Zhiyong Li , Bo Xie , Alexander Ko
IPC分类号： B08B3/02
CPC分类号： B08B3/04 , B08B3/02 , H01L21/67028
摘要： A semiconductor substrate processing apparatus and a method for processing semiconductor substrates are provided. The semiconductor substrate processing apparatus may include a liquid container where a semiconductor substrate may be immersed in a semiconductor processing liquid. The semiconductor substrate may then be removed from the semiconductor processing liquid while vapor is directed at a surface of the semiconductor substrate where the semiconductor substrate contacts a surface of the processing liquid.
摘要翻译：提供半导体衬底处理设备和半导体衬底的处理方法。半导体基板处理装置可以包括其中半导体基板可以浸入半导体处理液体中的液体容器。然后可以从半导体处理液体中去除半导体衬底，同时蒸汽指向半导体衬底的半导体衬底接触处理液表面的表面。

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